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ISTFA 1996

November 18–22, 1996

Los Angeles, California, USA

Conference Sponsors:

Electronic Device Failure Analysis Society
ASM International

ISTFA 1996: Conference Proceedings from the 22nd International Symposium for Testing and Failure Analysis

Issue navigation

Advanced Techniques
Case Histories
Techniques
FIB and E-Beam Techniques
Software Tools for Failure Analysis
Case Histories
Signature Analysis
TEM
Discretes
Testing
BGA
Packaging
Sample Preparation
Mechanisms
Backside Failure Analysis
Additional Paper from Packaging Session
Volume Information

ISTFA 1996: Conference Proceedings from the 22nd International Symposium for Testing and Failure Analysis

Advanced Techniques

A Comparative Study of Electron and Ion Beam Induced Charge Imaging Techniques in CMOS Failure Analysis

D.S.H. Chan; S. Kolachina; V.K.S. Ong; J.C.H. Phang; T. Osipowicz; J.L. Sanchez; F. Watt

ISTFA 1996; 3-8doi:https://doi.org/10.31399/asm.cp.istfa1996p0003

Infrared Light Emission From Semiconductor Devices

D.L. Barton; P. Tangyunyong; J.M. Soden; A.Y. Liang; F.J. Low; A.N. Zaplatin; K. Shivanandan; G. Donohoe

ISTFA 1996; 9-17doi:https://doi.org/10.31399/asm.cp.istfa1996p0009

The Use of Near-Field Scanning Optical Microscopy for Failure Analysis of ULSI Circuits

R.M. Cramer; L.J. Balk; R. Chin; R. Boylan; S.B. Kämmer; F.J. Reineke; M. Utlaut

ISTFA 1996; 19-24doi:https://doi.org/10.31399/asm.cp.istfa1996p0019

Case Histories

Golden Devices II: Alchemy in the 0.35μm Era

K. Van Doorselaer; R. Young; N. Dawes

ISTFA 1996; 27-35doi:https://doi.org/10.31399/asm.cp.istfa1996p0027

Focused Ion Beam Assisted Circuit Debug of a Video Graphics Chip

L.S. Fischer; S.B. Herschbein

ISTFA 1996; 37-39doi:https://doi.org/10.31399/asm.cp.istfa1996p0037

Two Unique Case Studies Performed With Photoemission Microscopy (PEM)

G.F. Shade

ISTFA 1996; 41-46doi:https://doi.org/10.31399/asm.cp.istfa1996p0041

Application of Photoemission Microscopy and Focused Ion Beam Microsurgery to an Investigation of Latchup

D.C. Mayer; R.J. Ferro; D.L. Leung; M.A. Dooley; J.R. Scarpulla

ISTFA 1996; 47-51doi:https://doi.org/10.31399/asm.cp.istfa1996p0047

Characterization of Unfilled Tungsten Plugs on a 0.35μm CMOS Multilevel Metallization Process

H. Sur; S. Bothra; Y. Strunk; J. Hahn

ISTFA 1996; 141-147doi:https://doi.org/10.31399/asm.cp.istfa1996p0141

Failure Analysis of a Half-Micron CMOS IC Technology

A.Y. Liang; P. Tangyunyong; R.S. Bennett; R.S. Flores; J.M. Soden; E.I. Cole, Jr.

ISTFA 1996; 149-158doi:https://doi.org/10.31399/asm.cp.istfa1996p0149

Burn-in Failure Analysis of 0.5μm 1MB SRAM: Barrier Glue Layer Cracks and Tungsten Plug “Worm Holes”

E. Widener; S. Tatti; P. Schani; S. Crown; B. Dunnigan; J. Moss; C.M. Chan; N.H. Hamid; F.Y. Soon; J. Fitch; E. Deeters

ISTFA 1996; 159-164doi:https://doi.org/10.31399/asm.cp.istfa1996p0159

The Application of Novel Failure Analysis Techniques and Defect Modeling in Eliminating Short Poly End-Cap Problem in Submicron CMOS Devices

Y.E. Hong; M.T.T. We

ISTFA 1996; 165-168doi:https://doi.org/10.31399/asm.cp.istfa1996p0165

Case Study: Unique Stress Induced Gate Oxide Defects in a CMOS Analog/Digital Device Revealed by Backside Silicon Removal

M.M. Matthews

ISTFA 1996; 169-173doi:https://doi.org/10.31399/asm.cp.istfa1996p0169

Techniques

Localizing Heat-Generating Defects Using Fluorescent Microthermal Imaging

P. Tangyunyong; A.Y. Liang; A.W. Righter; D.L. Barton; J.M. Soden

ISTFA 1996; 55-62doi:https://doi.org/10.31399/asm.cp.istfa1996p0055

A User-Friendly System for Fluorescent Microthermal Imaging and Light Emission Microscopy

J-Y. Glacet; S. Berne

ISTFA 1996; 63-71doi:https://doi.org/10.31399/asm.cp.istfa1996p0063

Fast, Clean and Low Damage Deprocessing Using Inductively Coupled and RIE Plasmas

W.E. Vanderlinde; C.J. Von Benken; C.M. Davin; A.R. Crockett

ISTFA 1996; 73-76doi:https://doi.org/10.31399/asm.cp.istfa1996p0073

X-Ray Microfocus Radioscopy and Computed Tomography for Failure Analysis

R.H. Bossi; D.A. Cross; R.A. Mickelsen

ISTFA 1996; 77-82doi:https://doi.org/10.31399/asm.cp.istfa1996p0077

FIB and E-Beam Techniques

Low Resistivity FIB Depositions Within High Aspect Ratio Holes

R.A. Lee; T.R. Lundquist

ISTFA 1996; 85-88doi:https://doi.org/10.31399/asm.cp.istfa1996p0085

Grains Observation Using FIB Anisotropic Etch Followed by AFM Imaging

H. Yamashita; Y. Hata

ISTFA 1996; 89-94doi:https://doi.org/10.31399/asm.cp.istfa1996p0089

Cross-sectional Specimen Preparation of Fragile Failure Location in Thin-Film Transistors Using Focused Ion Beam Etching and Transmission Electron Microscope

N. Miura; K. Tsujimato; R. Kanehara; N. Tsutsui; S. Tsuji

ISTFA 1996; 95-100doi:https://doi.org/10.31399/asm.cp.istfa1996p0095

Low Acceleration Voltage EBIC Using FESEM and Application to Cross-Sectional Junction Evaluation

Y. Kadota; K. Mori

ISTFA 1996; 101-105doi:https://doi.org/10.31399/asm.cp.istfa1996p0101

Software Tools for Failure Analysis

Contamination Diagnosis Using Contamination-Defect-Fault (CDF) Simulation

J. Khare; W. Maly

ISTFA 1996; 109-114doi:https://doi.org/10.31399/asm.cp.istfa1996p0109

FLOSPAT: Fault Localization by Sensitized Path Transformation

M.W. Heath; W. Maly

ISTFA 1996; 115-120doi:https://doi.org/10.31399/asm.cp.istfa1996p0115

Fault Verification Simulation for Light-Emission Microscopy and Liquid-Crystal Analysis

N. Kuji; T. Takeda; S. Nakamura; Y. Komine

ISTFA 1996; 121-126doi:https://doi.org/10.31399/asm.cp.istfa1996p0121

Fault Diagnosis on the TMS320C80 (MVP) Using FastScan™

J. Platt; K.M. Butler; S. Venkataraman; G. Hetherington; G. Lorig

ISTFA 1996; 127-132doi:https://doi.org/10.31399/asm.cp.istfa1996p0127

Modeling IC Defects Using Circuit Simulation Software

J.J. Cassels

ISTFA 1996; 133-137doi:https://doi.org/10.31399/asm.cp.istfa1996p0133

Signature Analysis

Risk Assessment in Signature Analysis

M. Pore; G. Gilfeather; L. Levy

ISTFA 1996; 177-182doi:https://doi.org/10.31399/asm.cp.istfa1996p0177

Signature Analysis: Statistical Models and Their Application to FA

C.K. Lakshminarayan; S. Pabbisetty; O. Adams; F. Pires; M. Thomas; C.-P. Han

ISTFA 1996; 183-188doi:https://doi.org/10.31399/asm.cp.istfa1996p0183

A Signature Analysis Method for IC Failure Analysis

C.L. Henderson; J.M. Soden

ISTFA 1996; 189-195doi:https://doi.org/10.31399/asm.cp.istfa1996p0189

TEM

TEM Sample Preparation Using A Focused Ion Beam and A Probe Manipulator

L.R. Herlinger; S. Chevacharoenkul; D.C. Erwin

ISTFA 1996; 199-205doi:https://doi.org/10.31399/asm.cp.istfa1996p0199

Pin-Point Transmission Electron Microscopic Analysis Applied to Off-Leakage Failures of a Bipolar Transistor in 0.5μm BiCMOS Devices

M. Okihara; H. Tanaka; N. Hirashita; T. Nakamura; H. Okada; Y. Hijikata; K. Shimoda

ISTFA 1996; 207-212doi:https://doi.org/10.31399/asm.cp.istfa1996p0207

TEM Cross-Sectional Analysis of ESD Induced Damage in Input Protection Circuitry

P.T. Nguyen; D.S. Patrick; M.L. Hayenga

ISTFA 1996; 213-217doi:https://doi.org/10.31399/asm.cp.istfa1996p0213

Discretes

A Study of Measurement Methods for Detecting Voiding and Delamination of Die Attach Materials in Power Semiconductor Devices

L. Smith; T.S. Kalkur

ISTFA 1996; 221-226doi:https://doi.org/10.31399/asm.cp.istfa1996p0221

Failure Analysis of the Die-Attach in a Metal-Type Package

J. Acki; A. Murakami; T. Akutsu; S. Matsuda; A. Maruyama; T. Iwamoto; H. Kirihata

ISTFA 1996; 227-232doi:https://doi.org/10.31399/asm.cp.istfa1996p0227

Charge Diffusion and Reciprocity Theorems: A Direct Approach to EBIC of Ridge Laser Diodes

F. Magistrali; G. Salmini; G. Martines; M. Vanzi

ISTFA 1996; 233-238doi:https://doi.org/10.31399/asm.cp.istfa1996p0233

Characterization and Elimination of Forward Snapback Defects in GaAs Light Emitting Diodes

J. Zimmer; D. Nielsen; T.A. Anderson; M. Schade; N. Saha; G. Thome

ISTFA 1996; 239-241doi:https://doi.org/10.31399/asm.cp.istfa1996p0239

Testing

Temperature Dependence of Quiescent Currents as a Defect Prognosticator and Evaluation Tool

J.S. Seo; S.S. Lee; S. Daniel; C.K. Yoon

ISTFA 1996; 245-249doi:https://doi.org/10.31399/asm.cp.istfa1996p0245

Contactless Testing of Pulse Propagation in IC’s - A Comparison Between OBIC and Captive-Coupling Detection Techniques

K. Hempel; G. Sargsjan; H. Bergner

ISTFA 1996; 251-256doi:https://doi.org/10.31399/asm.cp.istfa1996p0251

Electron-Beam Analysis of the Turn-On Speed of Grounded-Gate NMOS ESD Protection Transistors During Charged Device-Model Stress Pulses

G. Meneghesso; E. Zanoni; J.R.M. Luchies; F.G. Kuper; A.J. Mouthaan

ISTFA 1996; 257-262doi:https://doi.org/10.31399/asm.cp.istfa1996p0257

Contactless Function Test of Integrated Circuits on the Wafer

H.H. Berger; J. Sturm; F. Esfahani; A. Benedix; K-O. Hofacker; D. McClymont; D. Bartelt; M. Pohland; H. Bergner; K. Hempel; G. Sargsjan; J. Degenhardt; C. Dietrich; D. Runge; C. Swiatkowski

ISTFA 1996; 263-266doi:https://doi.org/10.31399/asm.cp.istfa1996p0263

BGA

Package Related Failure Mechanisms in Plastic BGA Packages Used for ASIC Devices

K. Parekh; R. Milburn; K. Georgia

ISTFA 1996; 269-276doi:https://doi.org/10.31399/asm.cp.istfa1996p0269

Failure Analysis of Flip-Chip Interconnections Through Acoustic Microscopy

O. Diaz de Leon; M. Nassirian; C. Todd; R. Chowdhury

ISTFA 1996; 277-283doi:https://doi.org/10.31399/asm.cp.istfa1996p0277

Packaging

Signature Analysis of Package Delamination Using Scanning Acoustic Microscope

S.X. Li; K. Lee; J. Hulog; R. Gannamani; S. Yin

ISTFA 1996; 287-292doi:https://doi.org/10.31399/asm.cp.istfa1996p0287

A Case Study of Post De-tape Cleans on Mold Compound Adhesion

D. Saxon; R. Sims

ISTFA 1996; 293-299doi:https://doi.org/10.31399/asm.cp.istfa1996p0293

Spatial Evaluation of Resolution in a Scanning Ultrasonic Microscope. Microassembling Technologies Characterization: Differences Between A-Scan and C-Scan Analysis Modes

L. Bechou; Y. Ousten; Y. Danto; J.-E. Leclavé; M. Aude

ISTFA 1996; 301-312doi:https://doi.org/10.31399/asm.cp.istfa1996p0301

Macro and Micro Thermal Model of an Elevated Temperature Dielectric Breakdown in Printed Circuit Boards

R. Stutzman; S. Sathe; B. Sammakia

ISTFA 1996; 313-316doi:https://doi.org/10.31399/asm.cp.istfa1996p0313

Sample Preparation

A Review of Wet Etch Formulas for Silicon Semiconductor Failure Analysis

T.W. Lee

ISTFA 1996; 319-331doi:https://doi.org/10.31399/asm.cp.istfa1996p0319

Carbon Coating for Electron Beam Testing and Focus Ion Beam Reconfiguration

P. Perdu; G. Perez; M. Dupire; B. Benteo

ISTFA 1996; 333-338doi:https://doi.org/10.31399/asm.cp.istfa1996p0333

A Technique for Achieving Precision Cross Sections of Released Surface Micromachined Structures

D.J. Woodilla

ISTFA 1996; 339-342doi:https://doi.org/10.31399/asm.cp.istfa1996p0339

Mechanisms

The Study of ESD Destructive Mechanism for PN-Junction

N. Wakai; M. TsuTsumi; T. Setoya

ISTFA 1996; 345-350doi:https://doi.org/10.31399/asm.cp.istfa1996p0345

Interconnect Failure Dependence on Crystallographic Structure

D.P. Field; J.A. Nucci; R.R. Keller

ISTFA 1996; 351-355doi:https://doi.org/10.31399/asm.cp.istfa1996p0351

Dielectric Breakdown in Printed Circuit Boards at Elevated Temperatures

P. Singh; G.T. Galyon; J. Obrzut; W.A. Alpaugh

ISTFA 1996; 357-361doi:https://doi.org/10.31399/asm.cp.istfa1996p0357

Mechanism Study of Contact Corrosion in Unpatterned Metal Wafer

C.-H. Chang; Y.-S. Huang; H.-W. Chang

ISTFA 1996; 363-369doi:https://doi.org/10.31399/asm.cp.istfa1996p0363

TPLY for Yield Improvement

G. Matusiewicz

ISTFA 1996; 371-378doi:https://doi.org/10.31399/asm.cp.istfa1996p0371

Backside Failure Analysis

A New Robust Backside Flip-Chip Probing Methodology

P.F. Ullmann; C.G. Talbot; R.A. Lee; C. Orjuela; R. Nicholson

ISTFA 1996; 381-386doi:https://doi.org/10.31399/asm.cp.istfa1996p0381

Various Contrasts Identifiable From the Backside of a Chip by 1.3μm Laser Beam Scanning and Current Change Imaging

K. Nikawa; S. Inoue

ISTFA 1996; 387-392doi:https://doi.org/10.31399/asm.cp.istfa1996p0387

Failure Analysis From Back Side of Die

N.M. Wu; K. Weaver; J.H. Lin

ISTFA 1996; 393-399doi:https://doi.org/10.31399/asm.cp.istfa1996p0393

Failure Analysis of DRAM Storage Node Trench Capacitors for 0.35-Micron and Follow-On Technologies Using the Focused Ion Beam for Electrical and Physical Analysis

G. Benstetter; G. Bomberger; P. Coutu; R. Danyew; R. Douse

ISTFA 1996; 401-407doi:https://doi.org/10.31399/asm.cp.istfa1996p0401

Additional Paper from Packaging Session

An Investigation into Moisture-Induced Cracking in Plastic Packages Using Thermal Analysis Techniques

S. Chew

ISTFA 1996; 411-417doi:https://doi.org/10.31399/asm.cp.istfa1996p0411

Volume Information

Credits

ISTFA 1996; iiidoi:https://doi.org/10.31399/asm.cp.istfa1996fm01

Preface

ISTFA 1996; viidoi:https://doi.org/10.31399/asm.cp.istfa1996fm02

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