Search Results for vaporization

The chemicals that have been used in traditional vapor degreasing have serious health and environmental hazards that have prompted the search for modified and alternative techniques. This article provides a detailed discussion on the regulatory mandates that affect the use of industrial degreasing methods. It describes the aqueous degreasing technique, which forms an attractive alternative to the traditional vapor degreasing process. The article includes information on the materials and equipment used in the process, and discusses the advantages and disadvantages of hot and dip tank systems of aqueous degreasing. It explains how to convert an existing vapor degreaser to an aqueous cleaning system.

Physical vapor deposition (PVD) coatings are harder than any metal and are used in applications that cannot tolerate even microscopic wear losses. This article describes the three most common PVD processes: thermal evaporation, sputtering, and ion plating. It also discusses ion implantation in the context of research and development applications.

This article contains a table that lists the vapor pressures of selected metallic elements.

Vapor-phase soldering is a process of condensation heating in which the product prepared for soldering is passed through or into a layer of saturated vapor. This article provides an overview of the soldering process with emphasis on its applications and the equipment used.

This article discusses the definitions, classifications, structural features, vapor pressure values, corrosion inhibition mechanisms, and methods of evaluation of vapor-phase-corrosion inhibitors or volatile corrosion inhibitors (VCIs). Practical methods of using VCIs for corrosion protection of aluminum, ferrous, and nonferrous alloys are discussed with specific examples. The article contains tables that summarize the applications of different VCIs used for protecting ferrous metals, copper and its alloys, and silver.

This article focuses on transport phenomena and modeling approaches that are specific to vapor-phase processes (VPP). It discusses the VPP for the synthesis of materials. The article reviews the basic notions of molecular collisions and gas flows, and presents transport equations. It describes the modeling of vapor-surface interactions and kinetics of hetereogeneous processes as well as the modeling and kinetics of homogenous reactions in chemical vapor deposition (CVD). The article provides information on the various stages of developing models for numerical simulation of the transport phenomena in continuous media and transition regime flows of VPP. It explains the methods used for molecular modeling in computational materials science. The article also presents examples that illustrate multiscale simulations of CVD or PVD processes and examples that focus on sputtering deposition and reactive or ion beam etching.

Solvent cleaning is a surface preparation process that can be accomplished in room temperature baths (cold cleaning ) or by condensing vapors of a solvent on a workpiece (vapor degreasing). This article provides a detailed discussion on solvents, equipment, process limitations and applications, and safety and health hazards of cold cleaning and vapor degreasing. It also includes information on control of contamination, conservation and recovery of solvent, and disposal of solvent wastes.

This article presents the principles of chemical vapor deposition (CVD) with illustrations. It discusses the types of CVD processes, namely, thermal CVD, plasma CVD, laser CVD, closed-reactor CVD, chemical vapor infiltration, and metal-organic CVD. The article reviews the CVD reactions of materials related to hard, tribological, and high-temperature coatings and to free-standing structures. It concludes by reviewing the advantages, disadvantages, and applications of CVD.

This article describes the vapor-phase growth techniques applied to the epitaxial deposition of semiconductor films and discusses the fundamental processes involved in metal-organic chemical vapor deposition (MOCVD). It reviews the thermodynamics that determine the driving force behind the overall growth process and the kinetics that define the rates at which the various processes occur. The article provides information on the reactor systems and hardware, MOCVD starting materials, engineering considerations that optimize growth, and the growth parameters for a variety of Group III-V, II-VI, and IV semiconductors.

This article discusses the application of amorphous and crystalline films through plasma-enhanced chemical vapor deposition (PECVD) from the view point of microelectronic device fabrication. It describes the various types of PECVD reactors and deposition techniques. Plasma enhancement of the CVD process is discussed briefly. The article also describes the properties of amorphous and crystalline films deposited by the PECVD process for integrated circuit fabrication.

Chemical vapor deposition (CVD) involves the formation of a coating by the reaction of the coating substance with the substrate. Serving as an introduction to CVD, the article provides information on metals, ceramics, and diamond films formed by the CVD process. It further discusses the characteristics of different pack cementation processes, including aluminizing, siliconizing, chromizing, boronizing, and multicomponent coating.

This article describes eight stages of the atomistic film growth: vaporization of the material, transport of the material to the substrate, condensation and nucleation of the atoms, nuclei growth, interface formation, film growth, changes in structure during the deposition, and postdeposition changes. It also discusses the effects and causes of growth-related properties of films deposited by physical vapor deposition processes, including residual film stress, density, and adhesion.