1-20 of 408 Search Results for

switching units

Follow your search
Access your saved searches in your account

Would you like to receive an alert when new items match your search?
Close Modal
Sort by
Series: ASM Handbook
Volume: 4C
Publisher: ASM International
Published: 09 June 2014
DOI: 10.31399/asm.hb.v04c.a0005836
EISBN: 978-1-62708-167-2
... with multiple heat stations, such as switching units and multiple (zone) outputs. The article describes power supply operational control and power supply protection circuits. It details duty cycle, power factor, and harmonics of power supplies. The article also describes system parameters, software analysis...
Series: ASM Handbook
Volume: 20
Publisher: ASM International
Published: 01 January 1997
DOI: 10.31399/asm.hb.v20.a0002432
EISBN: 978-1-62708-194-8
... operating until it fails. At that time, a second unit, which has been idly standing by, is switched into the system, commonly by a sensing and switching subsystem. For a two-unit standby system, the reliability is the probability that unit 1 succeeds for the entire period ( t ) or that unit 1 fails...
Image
Published: 01 December 2004
Fig. 5 Unit cell for one type of domain found in the ordered FeAl phase representing the B2 superlattice (switch atoms for other domain) More
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001262
EISBN: 978-1-62708-170-2
... on the degree of ripple in the rectifier output and the quickness of response in the internal switching circuitry of the controller. High-quality units produce extremely sharp square-wave patterns ( Fig. 3 and 4 ). Figure 5 illustrates the wave form of the forward (cathodic) and reverse (anodic) output...
Series: ASM Handbook
Volume: 4C
Publisher: ASM International
Published: 09 June 2014
DOI: 10.31399/asm.hb.v04c.a0005838
EISBN: 978-1-62708-167-2
... switching devices, namely, silicon-controlled rectifiers, insulated-gate bipolar transistors, and metal-oxide semiconductor field-effect transistors. The article also provides information on frequency-multiplication harmonic-induction power supplies, namely, push-pull and half-bridge inverters and full...
Image
Published: 01 November 2010
Fig. 6 Schematic two-dimensional geometric description of a dendritic grain using direct modeling the grain structure by means of the cellular automaton (CA) method coupled with the finite-element (FE) method ( Fig. 1b ). A representation is given of (a) a unit triangular mesh used by the FE More
Series: ASM Handbook
Volume: 6A
Publisher: ASM International
Published: 31 October 2011
DOI: 10.31399/asm.hb.v06a.a0005565
EISBN: 978-1-62708-174-0
... solid-state technology known as buck converters or choppers operating in switch mode ( Fig. 21 ). Fig. 21 Schematic of solid-state circuit of choppers operating in switch mode Each individual unit incorporates a power-off, CV output, CC output switch. All of the units connected to the main...
Book: Casting
Series: ASM Handbook
Volume: 15
Publisher: ASM International
Published: 01 December 2008
DOI: 10.31399/asm.hb.v15.a0005196
EISBN: 978-1-62708-187-0
.... The load-commutated converter increases frequency as the charge contents of a furnace increase, while it simultaneously compensates for lining wear. No capacitor switching is required as in the line frequency units. In addition, a single potentiometer offers stepless and infinite control, eliminating...
Series: ASM Handbook
Volume: 4B
Publisher: ASM International
Published: 30 September 2014
DOI: 10.31399/asm.hb.v04b.a0005931
EISBN: 978-1-62708-166-5
... monitoring and control of motion and position of various mechanical components with the help of mechanical limit switches, proximity sensors, and distance- and position-measuring devices. Using inputs from both flow meters and sensors, such as thermocouples and oxygen sensors, flow measurement control...
Series: ASM Handbook
Volume: 6A
Publisher: ASM International
Published: 31 October 2011
DOI: 10.31399/asm.hb.v06a.a0005630
EISBN: 978-1-62708-174-0
... is the displacement off axis, and w is the laser spot size; units must be the same). This is also known as the 1/ e 2 profile. The designer must allow sufficient clear aperture for the power that resides outside the 1/ e 2 diameter of the calculated collimated beam diameter. Fig. 3 Output profiles...
Series: ASM Handbook
Volume: 4C
Publisher: ASM International
Published: 09 June 2014
DOI: 10.31399/asm.hb.v04c.a0005899
EISBN: 978-1-62708-167-2
... Peripheral components, such as: Recooling device Charging system Fume extractor Skimming device Fig. 1 Diagram of an induction crucible furnace plant Furnace Body The furnace itself is a simply constructed melting unit, which basically consists of the cylindrical refractory...
Series: ASM Handbook
Volume: 13C
Publisher: ASM International
Published: 01 January 2006
DOI: 10.31399/asm.hb.v13c.a0004171
EISBN: 978-1-62708-184-9
... growing industries in the United States due to the constant development and application of new products in data storage, communication, and computing. Constantly shrinking device dimensions enable integrated circuits to become more powerful while the cost of manufacturing continues to drop. At the heart...
Series: ASM Handbook
Volume: 17
Publisher: ASM International
Published: 01 August 2018
DOI: 10.31399/asm.hb.v17.a0006469
EISBN: 978-1-62708-190-0
... with a transducer-voltage switch or digital setting Gated alarm units, which can be implemented in analog or digital form to enable the use of automatic alarms when flaws are detected. This is accomplished by setting up controllable time spans on the display that correspond to specific zones within the test...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001226
EISBN: 978-1-62708-170-2
... is that the performance of a piezoelectric unit deteriorates over time. This can occur for several reasons. The crystal tends to depolarize itself over time and with use, which causes a substantial reduction in the strain characteristics of the crystal. As the crystal itself expands less, it cannot displace the diaphragm...
Series: ASM Handbook
Volume: 6
Publisher: ASM International
Published: 01 January 1993
DOI: 10.31399/asm.hb.v06.a0001337
EISBN: 978-1-62708-173-3
... semiconductor field-effect transistor) and IGBT devices in various switch mode regulators. In a three-phase input unit, a standard technique is to place the switching control in the primary neutral conductor of the HV transformer ( Fig. 11 ). The secondary circuitry is three-phase or six-phase, full-wave...
Series: ASM Handbook
Volume: 20
Publisher: ASM International
Published: 01 January 1997
DOI: 10.31399/asm.hb.v20.a0002445
EISBN: 978-1-62708-194-8
... with design rules (e.g., connect fewer than N loads to a source whose “fanout” is N ). In contrast, in digital systems the power transmitted between macro design elements is small compared to that dissipated in internal switching and is only modeled during design stages where heat removal and packaging...
Series: ASM Handbook
Volume: 4C
Publisher: ASM International
Published: 09 June 2014
DOI: 10.31399/asm.hb.v04c.a0005854
EISBN: 978-1-62708-167-2
... is high. Shut down. Inlet temperature high (fault): Inlet temperature switch shows high water temperature. Outlet temperature high (fault): Outlet temperature switch shows high water temperature. Water pressure low (fault): Water pressure is low; system cooling is not adequate. SCR/IGBT...
Series: ASM Handbook
Volume: 7
Publisher: ASM International
Published: 30 September 2015
DOI: 10.31399/asm.hb.v07.a0006091
EISBN: 978-1-62708-175-7
... good contact material for many switching devices. Ag-CdO contact materials are well suited for contactors and motor starters but also are used in circuit breakers, relays, and switches with medium to low currents. Ag-CdO material has antiwelding and antierosion properties united with constant...
Series: ASM Handbook
Volume: 14B
Publisher: ASM International
Published: 01 January 2006
DOI: 10.31399/asm.hb.v14b.a0005183
EISBN: 978-1-62708-186-3
... ˙ ) where the proportionality constant q is related to the strain increase and stress decrease associated with a single softening event. Equation 39 should be compared with that derivable from the assumptions of the Bailey-Orowan ( Ref 19 , 20 ) theory of creep, in which the unit softening events...
Series: ASM Handbook
Volume: 14A
Publisher: ASM International
Published: 01 January 2005
DOI: 10.31399/asm.hb.v14a.a0004020
EISBN: 978-1-62708-185-6
... ) theory of creep, in which the unit softening events are considered to be activated by thermal vibrations only, that is, exactly as for static recovery. On this basis, N ˙ is constant, and Eq 39 can be modified ( N ˙ proportional to r =rate of recovery) to yield: (Eq 40) θ = θ...