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sputtering
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Book: Surface Engineering
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0007039
EISBN: 978-1-62708-170-2
... Abstract Sputtering is a nonthermal vaporization process in which atoms are ejected from the surface of a solid by momentum transfer from energetic particles of atomic or molecular size. Ionized gases in plasma nitriding chambers often possess enough energy to sputter atoms from workload...
Abstract
Sputtering is a nonthermal vaporization process in which atoms are ejected from the surface of a solid by momentum transfer from energetic particles of atomic or molecular size. Ionized gases in plasma nitriding chambers often possess enough energy to sputter atoms from workload, fixturing, and racking surfaces that are then redeposited to the benefit or detriment of the nitriding process. This article explains how and why sputtering occurs during plasma nitriding and how to recognize and control its effects. It reviews the factors that influence the intensity of sputtering and its effects, whether positive or negative, on treated parts. It also provides recommendations for improving outcomes when nitriding titanium alloys, ferrous metals, particularly stainless steels, and components with complex geometries.
Book: Surface Engineering
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001288
EISBN: 978-1-62708-170-2
... Abstract Sputtering is a nonthermal vaporization process in which the surface atoms are physically ejected from a surface by momentum transfer from an energetic bombarding species of atomic/molecular size. It uses a glow discharge or an ion beam to generate a flux of ions incident on the target...
Abstract
Sputtering is a nonthermal vaporization process in which the surface atoms are physically ejected from a surface by momentum transfer from an energetic bombarding species of atomic/molecular size. It uses a glow discharge or an ion beam to generate a flux of ions incident on the target surface. This article provides an overview of the advantages and limitations of sputter deposition. It focuses on the most common sputtering techniques, namely, diode sputtering, radio-frequency sputtering, triode sputtering, magnetron sputtering, and unbalanced magnetron sputtering. The article discusses the fundamentals of plasma formation and the interactions on the target surface. A comparison of reactive and nonreactive sputtering is also provided. The article concludes with a discussion on the several methods of process control and the applications of sputtered films.
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Published: 01 January 1986
Fig. 11(a) Raw 11 B + and 30 Si 2+ secondary ion signals versus sputtering time for a boron-implanted silicon substrate. Obtained using oxygen beam bombardment in an ion microscope
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Published: 01 December 2004
Fig. 23 Gas-discharge chamber for reactive sputtering and optical examination of interference layers on polished specimens. The results of the reactive sputtering process can be monitored through the viewing window. (a) Chamber mounted on a microscope stage. (b) Schematic of the various
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Published: 15 December 2019
Fig. 10 Sputtering crater from a Grimm-type glow discharge lamp
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Published: 15 January 2021
Fig. 11 Auger electron spectroscopy depth profile using monoatomic argon sputtering through the nickel film. A nickel silicide is observed at the interface.
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Published: 01 November 1995
Fig. 26 Physical vapor deposition process used to apply coating by sputtering
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Published: 15 December 2019
Fig. 30 Surface sputtering of silicon. Sputter rates increase for angles of approximately 80 to 85°, because the collision cascade is proximal to the surface.
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Published: 15 December 2019
Fig. 54 Nanoplasmonic devices fabricated by direct sputtering of a metal layer on a quartz substrate. Adapted and reprinted with permission from Ref 91. ©2019 IEEE
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Published: 15 December 2019
Fig. 25 Schematic of sputtering setup with mask to generate a bevel. Adapted from Ref 69
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Published: 15 December 2019
Fig. 2 Physical effects of primary ion bombardment: implantation and sputtering
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Published: 15 December 2019
Fig. 11 (a) Raw 11 B + and 30 Si 2+ secondary ion signals versus sputtering time for a boron-implanted silicon substrate. Acquired using oxygen beam bombardment in an ion microscope. (b) Boron profile after quantitative analysis of the sputtering rate and secondary ion intensity
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Published: 01 January 1986
Fig. 18 Concentration versus sputter etching time for Inconel 625 polarized 30 min in pH 3.7 nitric acid. (a) 0.3 V versus Ag/AgCl. (b) 0.6 V versus Ag/AgCl. (c) 0.9 V versus Ag/AgCl
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Published: 01 January 1986
Fig. 3 Schematic diagram of the sputtered species ejected during primary ion bombardment of a compound i x j y . These sputtered species may be monatomic, molecular, and/or incorporate implanted primary ions. i = ○, j = ●
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Published: 01 January 1986
Fig. 11(b) Boron profile (see Fig. 11(a) ) after quantitative analysis of the sputtering rate and secondary ion intensity.
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Published: 01 January 2002
Fig. 48 Artifacts generated by improper platinum sputter coating of a 4.6 mm (0.18 in.) diameter polycarbonate rotating beam fatigue specimen. This SEM view shows a pattern in the coating reminiscent of “mud-cracking.”
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