Search Results for semiconductor wafer fabrication

This article presents a detailed examination of corrosion at the various production stages of wafer fabrication. The corrosion issues related to batch metal-etch systems and single-wafer metal-etch systems are also discussed. The article provides a case study, which illustrates that the factors outside the normal processing of wafers or tool-specific problems can contribute to metal-line corrosion.

This article introduces various techniques commonly used in the characterization of semiconductors, namely single-crystal, polycrystalline, amorphous, oxide, organic, and low-dimensional semiconductors and semiconductor devices. The discussion covers material classification, fabrication methods, sample preparation, bulk/elemental characterization methods, microstructural characterization methods, surface characterization methods, and electronic characterization methods.

Gallium-base components can be found in a variety of products ranging from compact disk players to advanced military electronic warfare systems, owing to the factor that it can emit light, has a greater resistance to radiation and operates at faster speeds and higher temperatures. This article discusses the uses of gallium in optoelectronic devices and integrated circuits and applications of gallium. The article discusses the properties and grades of gallium arsenide and also provides information on resources of gallium. The article talks about the recovery techniques, including recovery from bauxite, zinc ore and secondary recovery process and purification. The article briefly describes the fabrication process of gallium arsenide crystals. Furthermore, the article gives a short note on world supply and demand of gallium and concludes with research and development on gallium arsenide integrated circuits.

This article discusses the application of amorphous and crystalline films through plasma-enhanced chemical vapor deposition (PECVD) from the view point of microelectronic device fabrication. It describes the various types of PECVD reactors and deposition techniques. Plasma enhancement of the CVD process is discussed briefly. The article also describes the properties of amorphous and crystalline films deposited by the PECVD process for integrated circuit fabrication.

This article discusses the basic principles of inductively coupled plasma mass spectrometry (ICP-MS), covering different instruments used for performing ICP-MS analysis. The instruments covered include the sample-introduction system, ICP ion source, mass analyzer, and ion detector. Emphasis is placed on ICP-MS applications in the semiconductor, photovoltaic, materials science, and other electronics and high-technology areas.

Chemical-mechanical planarization (CMP) of metals is described as mechanically accelerated corrosion, erosion corrosion, or metallic corrosion enhanced by wear. This article reviews the history, process, chemistry, electrochemistry, and defect issues for CMP. It provides an overview of CMP through a schematic illustration of CMP process equipment. The applications of CMP to tungsten and copper alloys are of prime interest in the semiconductor industry. The article discusses copper CMP and tungsten CMP in detail and analyzes polishing mechanism during CMP by application of direct current potentiodynamic polarization and alternating current impedance measurements. It concludes with information on chemically induced defects such as pitting corrosion, galvanic corrosion, and chemical etching.

X-ray topography is the general term for a family of x-ray diffraction imaging techniques capable of providing information on the nature and distribution of imperfections. This article provides a detailed account of x-ray topography techniques, providing information on the historical background and development trends in x-ray diffraction topography. The discussion covers the general principles, components of systems, and applications of x-ray topography techniques, namely conventional X-ray topographic techniques and synchrotron x-ray topographic techniques.

This article focuses on laboratory atomic force microscopes (AFMs) used in ambient air and liquid environments. It begins with a discussion on the origin of AFM and development trends occurring in AFM. This is followed by a section on the general principles of AFM and a comprehensive list of AFM scanning modes. There is a brief description of how each mode works and what types of applications can be made with each mode. Some of the processes involved in preparation of samples (bulk materials and those placed on a substrate) scanned in an AFM are then presented. The article provides information on the factors applicable to the accuracy and precision of AFM measurements. It ends by discussing the applications for AFMs in the fields of science, technology, and engineering.

This article discusses the influence of the materials, design, package type, and environment on corrosion in microelectronics. It describes the common sources and mechanisms of corrosion in microelectronics, including anodic, cathodic, and electrolytic reactions resulting in uniform corrosion, galvanic corrosion, pitting corrosion, creep corrosion, dendrite growth, fretting, stress-corrosion cracking, and whisker growth. The article presents effective measures for minimizing the moisture retention in hermetic packages and/or moisture ingress in plastic packages. It concludes with information corrosion tests.

Thermal spray processes involve complete or partial melting of a feedstock material in a high-temperature flame, and propelling and depositing the material as a coating on a substrate. This article describes the properties of sprayed electronic materials, including dielectrics, conductors, and resistors, and discusses their implications and associated limitations for device applications and potential remedial measures. The article presents specific examples of electrical/electronic device applications, including electromagnetic interference/radio-frequency interference shielding, planar microwave devices, waveguide devices, sensing devices, solid oxide fuel cells, heating elements, electrodes for capacitors and other electrochemical devices.

In a typical semiconductor integrated circuits (SICs) component, corrosion may be observed at the chip level and at the termination area of the lead frames that are plated with a solderable metal or alloy, such as tin and tin-lead alloys that are susceptible to corrosion. This article focuses on the key factors contributing to corrosion of electronic components, namely, chemicals (salts containing halides, sulfides, acids, and alkalis), temperature, air (polluted air), moisture, contact between dissimilar metals in a wet condition, applied potential differences, and stress. It discusses the chip corrosion and oxidation of tin and tin-lead alloys (solders) in SIC. The article also addresses the corrosion of the device terminations resulting in lead (termination) tarnishing that are caused by various factors, including galvanic corrosion, chemical residues, base metal migration and plating additives.

Ion implantation involves the bombardment of a solid material with medium-to-high-energy ionized atoms and offers the ability to alloy virtually any elemental species into the near-surface region of any substrate. This article describes the fundamentals of the ion implantation process and discusses the advantages, limitations, and applications of ion implantation. It also reviews a typical medium current semiconductor implanter adapted for implantation of metals with the aid of illustrations.

Current understanding of polishing wear involves a combination of abrasive, plastic flow, and tribochemical wear. This article explains these mechanisms and the correlation between them. Some explanations about practical polishing wear control, applications, and future prospects are also given. This article discusses the influence of size and number of wear particles on polishing at three abrasive wear modes. These include cutting, wedge forming, and plowing. The article concludes with information on applications and prospects of polishing wear control.

This article provides an overview of the implementation of wire embedding with ultrasonic energy and thermal embedding for polymer additive manufacturing, discussing the applications and advantages of the technique. The mechanical and electrical performance of the embedded wires is compared with that of other conductive ink processes in terms of electrical conductivity and mechanical strength.

Germanium is a semiconducting metalloid element found in Group IV A. Germanium is used in the field of electronics, infrared optics, and in the fields of gamma ray spectroscopy, catalysis, and fiber optics. This article discusses the sources, manufacturing, and processing of germanium, and focuses on the chemical properties of various germanium compounds, including germanium halides, germanates, germanides, germanes, inorganic, and organogermanium compounds. It also tabulates the physical, thermal, electronic, and optical properties of germanium, and explains the economical aspects and specifications of germanium. The article describes the analytical and test methods of germanium, including gravimetric method, titrimetric method, and spectral method. It provides a short note on toxicology, and concludes with the uses of germanium in different fields.

Measuring the thickness of thin films can be accomplished in many ways. This article focuses on the optical method of single-wavelength ellipsometry, two multiple-wavelength methods of reflectometry and spectroscopic ellipsometry for measuring the thickness of thin films. The general capabilities, principles and applications of ellipsometry and reflectometry are discussed in terms of nondestructive methods.

This article focuses on the selection, properties, and applications of powder metallurgy refractory metals and their alloys, including tungsten, molybdenum, tantalum, niobium, and rhenium.

Ceramic materials serve important insulative, capacitive, conductive, resistive, sensor, electrooptic, and magnetic functions in a wide variety of electrical and electronic circuitry. This article focuses on various applications of advanced ceramics in both electric power and electronics industry, namely, dielectric, piezoelectric, ferroelectric, sensing, magnetic and superconducting devices.

This article describes the vapor-phase growth techniques applied to the epitaxial deposition of semiconductor films and discusses the fundamental processes involved in metal-organic chemical vapor deposition (MOCVD). It reviews the thermodynamics that determine the driving force behind the overall growth process and the kinetics that define the rates at which the various processes occur. The article provides information on the reactor systems and hardware, MOCVD starting materials, engineering considerations that optimize growth, and the growth parameters for a variety of Group III-V, II-VI, and IV semiconductors.

This article presents an overview of advanced composites, namely, polymer matrix composites, metal-matrix composites, ceramic-matrix composites, and carbon-matrix composites. It also provides information on the properties and applications of the composites in thermal management and electronic packaging.