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semiconductor integrated circuits

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Series: ASM Handbook
Volume: 13C
Publisher: ASM International
Published: 01 January 2006
DOI: 10.31399/asm.hb.v13c.a0004172
EISBN: 978-1-62708-184-9
... Abstract In a typical semiconductor integrated circuits (SICs) component, corrosion may be observed at the chip level and at the termination area of the lead frames that are plated with a solderable metal or alloy, such as tin and tin-lead alloys that are susceptible to corrosion. This article...
Series: ASM Handbook
Volume: 4C
Publisher: ASM International
Published: 09 June 2014
DOI: 10.31399/asm.hb.v04c.a0005838
EISBN: 978-1-62708-167-2
... This section discusses capacitors, silicon-controlled rectifiers (SCRs), insulated-gate bipolar transistors (IGBTs) and metal-oxide semiconductor field-effect transistors (MOSFETs), integrated power modules, and transformers. Capacitors Tuning capacitor values typically range from 210 nF at 500 kHz...
Series: ASM Handbook
Volume: 13C
Publisher: ASM International
Published: 01 January 2006
DOI: 10.31399/asm.hb.v13c.a0004144
EISBN: 978-1-62708-184-9
... detected. Therefore, when corrosion failure occurs, it is often dismissed as just a failure, and the part or component is replaced. This Section discusses corrosion in passive electronic and semiconductor integrated circuits and components. Corrosion in the Chemical Process Industry Before building...
Series: ASM Handbook
Volume: 20
Publisher: ASM International
Published: 01 January 1997
DOI: 10.31399/asm.hb.v20.a0002475
EISBN: 978-1-62708-194-8
... are either solder or connectors, a technology in itself to provide satisfactory performance and reliability at affordable cost ( Ref 5 ). Electronic Applications The semiconductors play a pivotal role in electronics for processing and storing data and in interfacing the electronic circuits...
Series: ASM Handbook
Volume: 20
Publisher: ASM International
Published: 01 January 1997
DOI: 10.31399/asm.hb.v20.a0002445
EISBN: 978-1-62708-194-8
..., but will require more detail and precision in the behavioral and nonbehavioral requirements. The limitations of the languages and the lack of synthesis tools (except for digital integrated circuits) has limited the automation of this phase. It is appropriate to capture at this point any nonelectrical...
Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0001091
EISBN: 978-1-62708-162-7
... in defense applications, because they can send information about five times faster, withstand more radiation, and operate at higher temperatures than comparable silicon-base integrated circuits. Optoelectronic Devices An LED is a semiconductor that emits light when an electric current is passed...
Series: ASM Handbook
Volume: 13C
Publisher: ASM International
Published: 01 January 2006
DOI: 10.31399/asm.hb.v13c.9781627081849
EISBN: 978-1-62708-184-9
Series: ASM Handbook
Volume: 13C
Publisher: ASM International
Published: 01 January 2006
DOI: 10.31399/asm.hb.v13c.a0004225
EISBN: 978-1-62708-184-9
... per 1000 barrels SHE Sherwood number N number of neutrons SIC standard hydrogen electrode N PTFE (concentration approximately SLPR semiconductor integrated circuit Newton PVA 4 ppm) SMIE self-linear polarization resistance Nf population size; number of PVC polytetra uoroethylene solid metal induced...
Series: ASM Handbook
Volume: 4C
Publisher: ASM International
Published: 09 June 2014
DOI: 10.31399/asm.hb.v04c.a0005836
EISBN: 978-1-62708-167-2
... direct-current power supplies electrical circuits induction heating induction heating power supplies insulated-gate bipolar transistors low-frequency power supplies metal-oxide semiconductor field-effect transistors power factor routine inspection safety precautions switching units thyristors...
Series: ASM Handbook
Volume: 13C
Publisher: ASM International
Published: 01 January 2006
DOI: 10.31399/asm.hb.v13c.a0004171
EISBN: 978-1-62708-184-9
... of the industry is the ability at the wafer-fabrication plant to implement the complicated processes needed to deposit, pattern, and etch circuits in semiconductor materials. One key to the fabrication of integrated circuits is the method of removing selected areas of a conductive-deposited aluminum-copper...
Series: ASM Desk Editions
Publisher: ASM International
Published: 01 November 1995
DOI: 10.31399/asm.hb.emde.a0003062
EISBN: 978-1-62708-200-6
... with an expansion coefficient relatively close to that of silicon and, in consequence, is being rapidly developed for substrate use. Thin-film insulators (including SiO 2 and other oxides, glasses, and Si 3 N 4 ) have been developed as interlayer dielectric and as thin-film passivation for integrated circuit...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001285
EISBN: 978-1-62708-170-2
... of the CVD process is discussed briefly. The article also describes the properties of amorphous and crystalline films deposited by the PECVD process for integrated circuit fabrication. amorphous silicon films dielectric films integrated circuit fabrication microelectronic device fabrication PECVD...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006670
EISBN: 978-1-62708-213-6
... individual transistors within an integrated circuit (see article “Focused Ion Beam Instruments” in this Volume) ( Ref 3 ). Delayering , or removing the insulating and conducting layers in the interconnect structure from the surface of the semiconductor, can be accomplished with mechanical, ion...
Series: ASM Handbook
Volume: 24
Publisher: ASM International
Published: 15 June 2020
DOI: 10.31399/asm.hb.v24.a0006558
EISBN: 978-1-62708-290-7
... generally been relegated to flat, planar surfaces. Aerosol jetting and microdispensing have been the dominant processes used to selectively deposit inks onto a variety of surfaces. These inks can have functions including behaving as conductors, dielectrics, or even semiconductors ( Ref 2 , 3...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006641
EISBN: 978-1-62708-213-6
... is the most important semiconductor material for the semiconductor industry, with increasingly sophisticated integrated circuits built almost entirely on a silicon substrate. Silicon is also one of the most widely used semiconductor materials in PV technology to manufacture solar cells. Crystalline silicon...
Series: ASM Handbook
Volume: 4C
Publisher: ASM International
Published: 09 June 2014
DOI: 10.31399/asm.hb.v04c.a0005843
EISBN: 978-1-62708-167-2
... Abstract This article provides a discussion on transformers and reactors for induction heating. It presents information on the initial considerations in the selection process and the demands of power supply and load circuits. The article describes the types of transformers and reactors used...
Series: ASM Handbook
Volume: 5A
Publisher: ASM International
Published: 01 August 2013
DOI: 10.31399/asm.hb.v05a.a0005736
EISBN: 978-1-62708-171-9
...-power electronics and other applications. Many silicates (cordierite, mullite, steatites, forsterites, etc.), on the other hand, have low dielectric constants and have been investigated for integrated circuits and electrical insulating layers for high-temperature applications, for example, solid oxide...
Series: ASM Handbook
Volume: 4C
Publisher: ASM International
Published: 09 June 2014
DOI: 10.31399/asm.hb.v04c.a0005854
EISBN: 978-1-62708-167-2
... supply controller board to the PLC. The power supply is made up of power semiconductor devices. The power supply is usually a self-supported component in the system with safeguards and internal monitoring of parameters such as power, current, temperature, water flow (cooling), door interlocks, and safety...
Series: ASM Handbook
Volume: 21
Publisher: ASM International
Published: 01 January 2001
DOI: 10.31399/asm.hb.v21.a0003480
EISBN: 978-1-62708-195-5
... than that of silicon. Coefficients of thermal expansion range between 12 and 18 ppm/K. This can give rise to warpage and high thermal stresses in solder joints when integrated circuits (ICs, or chips) made from silicon and other semiconductors are directly attached to PCBs. To reduce stresses...
Series: ASM Handbook
Volume: 13A
Publisher: ASM International
Published: 01 January 2003
DOI: 10.31399/asm.hb.v13a.a0003600
EISBN: 978-1-62708-182-5
... enabled significant advancements in the ultralarge-scale integration (ULSI) processes of the semiconductor industry. The history, process, chemistry, electrochemistry, and defect issues for CMP are reviewed in this article. History Chemical-mechanical planarization was first introduced...