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semiconductor films

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Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001284
EISBN: 978-1-62708-170-2
...Abstract Abstract This article describes the vapor-phase growth techniques applied to the epitaxial deposition of semiconductor films and discusses the fundamental processes involved in metal-organic chemical vapor deposition (MOCVD). It reviews the thermodynamics that determine the driving...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001285
EISBN: 978-1-62708-170-2
... infrared heat. Fig. 3 Schematic of a remote plasma-enhanced chemical vapor deposition reactor for depositing compound semiconductor films. TMG, trimethylgallium. Source: Ref 23 Hybrid PECVD Systems Hybrid PECVD systems are a combination of the direct and remote PECVD systems. One example...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001286
EISBN: 978-1-62708-170-2
... by lattice strain or by the formation of “misfit” dislocation networks, and under proper conditions a single crystal epitaxial film can be grown. This is often the goal in molecular beam epitaxy (MBE) and chemical vapor deposition (CVD) of semiconductor thin films. In the growth of semiconductor materials...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006670
EISBN: 978-1-62708-213-6
... in a variety of devices that may use other classes of semiconductor for their active layers. Other examples of thin films utilizing these single-crystal wafer substrates span several classes of materials discussed in this article, including amorphous and polycrystalline semiconductors, and oxide semiconductors...
Book Chapter

By Jerome Kruger
Series: ASM Handbook
Volume: 13A
Publisher: ASM International
Published: 01 January 2003
DOI: 10.31399/asm.hb.v13a.a0003585
EISBN: 978-1-62708-182-5
... valve metals. Iron, when high potentials are applied, evolves oxygen instead of continuing to grow a thicker film. It is for this reason that many workers have suggested that the passive film on iron is a good electronic conductor, or at least a semiconductor ( Ref 58 ). Many ideas on the role...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006641
EISBN: 978-1-62708-213-6
..., uranium, nuclear fuel Semiconductor Acids, bases, organic solvents, precursors, ion implants Inductively coupled plasma mass spectrometry analysis and spike recovery results from a bis(diethylamido)silane precursor Table 2 Inductively coupled plasma mass spectrometry analysis and spike...
Series: ASM Handbook
Volume: 20
Publisher: ASM International
Published: 01 January 1997
DOI: 10.31399/asm.hb.v20.a0002475
EISBN: 978-1-62708-194-8
... to perform as expected. The nonelectromagnetic parameters fall into two distinctly different categories: those involved in fabrication (melting solder, making thermocompression bond, sputtering or evaporating film, diffusing impurities into semiconductors, sintering ceramics), and those involved...
Book Chapter

By S.L. Rohde
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001288
EISBN: 978-1-62708-170-2
... known as “unbalanced” magnetron sputtering. Compared to other thin-film deposition methods, sputter deposition techniques have several distinct advantages: Use of an unlimited range of source and film materials (i.e., metals, semiconductors, insulators, alloys, and compounds) Small...
Series: ASM Handbook
Volume: 13A
Publisher: ASM International
Published: 01 January 2003
DOI: 10.31399/asm.hb.v13a.a0003589
EISBN: 978-1-62708-182-5
...Abstract Abstract This article describes the Schottky defect and the Frenkel defect in oxides. It provides information on the p-type metal-deficit oxides and n-type semiconductor oxides. The article discusses diffusion mechanisms and laws of diffusion proposed by Fick. It explains the oxide...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001287
EISBN: 978-1-62708-170-2
..., the vaporization source is one that vaporizes materials by thermal means (that is, evaporation or sublimation), but other vapor sources can be used. The advantage of vacuum evaporation is that films of a variety of materials can be deposited at high rates over large areas in a very pure form. Limitations of vacuum...
Series: ASM Desk Editions
Publisher: ASM International
Published: 01 November 1995
DOI: 10.31399/asm.hb.emde.a0003062
EISBN: 978-1-62708-200-6
... with an expansion coefficient relatively close to that of silicon and, in consequence, is being rapidly developed for substrate use. Thin-film insulators (including SiO 2 and other oxides, glasses, and Si 3 N 4 ) have been developed as interlayer dielectric and as thin-film passivation for integrated circuit...
Series: ASM Handbook
Volume: 13A
Publisher: ASM International
Published: 01 January 2003
DOI: 10.31399/asm.hb.v13a.a0003600
EISBN: 978-1-62708-182-5
... an overview of CMP through a schematic illustration of CMP process equipment. The applications of CMP to tungsten and copper alloys are of prime interest in the semiconductor industry. The article discusses copper CMP and tungsten CMP in detail and analyzes polishing mechanism during CMP by application...
Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0001113
EISBN: 978-1-62708-162-7
...Abstract Abstract This article focuses on different thin-film deposition techniques used to make superconducting films and discusses the properties and advantages of high-critical-temperature and low-critical-temperature materials in a number of applications, including signal processing...
Series: ASM Handbook
Volume: 5A
Publisher: ASM International
Published: 01 August 2013
DOI: 10.31399/asm.hb.v05a.a0005736
EISBN: 978-1-62708-171-9
... and their cost advantage also have attracted the attention of the thin-film (PVD and CVD) community toward thermal spray technology. In recent years, thermal spray processing increasingly has been used to support thin-film processes involved in the fabrication of semiconductor electronics and other related...
Series: ASM Handbook
Volume: 13A
Publisher: ASM International
Published: 01 January 2003
DOI: 10.31399/asm.hb.v13a.a0003577
EISBN: 978-1-62708-182-5
... point of view. This phenomenon—discussed in the article “Passivity” in this Section—is also an area in which huge progress has been made in recent years. The mechanisms of oxide film growth, the chemical composition and the chemical states, the crystallographic structure, and the semiconductor...
Book Chapter

Series: ASM Handbook
Volume: 13A
Publisher: ASM International
Published: 01 January 2003
DOI: 10.31399/asm.hb.v13a.a0003685
EISBN: 978-1-62708-182-5
... at much lower temperatures in, for example, semiconductor applications, but the resulting films tend to incorporate impurities. The materials that can be easily deposited by CVD are more limited than with PVD. Chemical vapor deposition is particularly useful for depositing compounds and refractory...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006681
EISBN: 978-1-62708-213-6
... corner, and an extracted intensity profile is shown below the image. Fig. 5 (a) Typical transmission electron microscopy (TEM) specimen shape fits into a TEM specimen holder. (b) Gold nanoparticles supported by amorphous carbon film on a grid (left), and various TEM specimen grids (right...
Book Chapter

By Donald M. Mattox
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001289
EISBN: 978-1-62708-170-2
... on beryllium for diffusion bonding) ( Ref 65 ) Electrical conductive layers (aluminum, silver, and gold) on plastics and semiconductors Low-shear solid film lubricants (for example, silver and gold) ( Ref 107 ) Wear and abrasion-resistant coatings [for example, TiN, TiC x N y , (Ti-Al)C x N y...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006657
EISBN: 978-1-62708-213-6
... Electronics, USA Fig. 43 Auger electron spectroscopy depth profiles. (a) As-deposited 150 nm molybdenum and 150 nm gold films on silicon. (b) Same films after 450 °C (840 °F) anneal for 30 min. (c) Nitrided molybdenum and gold films after similar heat treatments. Source: Ref 111 Fig. 15...
Series: ASM Handbook
Volume: 11
Publisher: ASM International
Published: 15 January 2021
DOI: 10.31399/asm.hb.v11.a0006771
EISBN: 978-1-62708-295-2
...-correction method allows one to obtain useful chemical-state information from insulating samples. Common materials analyzed by XPS include metals, lubricants, semiconductors, metal oxides, glasses, ceramics, catalysts, plastics/polymers, coatings/thin films, and paper. Because the technique is so...