This article describes the vapor-phase growth techniques applied to the epitaxial deposition of semiconductor films and discusses the fundamental processes involved in metal-organic chemical vapor deposition (MOCVD). It reviews the thermodynamics that determine the driving force behind the overall growth process and the kinetics that define the rates at which the various processes occur. The article provides information on the reactor systems and hardware, MOCVD starting materials, engineering considerations that optimize growth, and the growth parameters for a variety of Group III-V, II-VI, and IV semiconductors.

This article discusses the application of amorphous and crystalline films through plasma-enhanced chemical vapor deposition (PECVD) from the view point of microelectronic device fabrication. It describes the various types of PECVD reactors and deposition techniques. Plasma enhancement of the CVD process is discussed briefly. The article also describes the properties of amorphous and crystalline films deposited by the PECVD process for integrated circuit fabrication.

This article describes eight stages of the atomistic film growth: vaporization of the material, transport of the material to the substrate, condensation and nucleation of the atoms, nuclei growth, interface formation, film growth, changes in structure during the deposition, and postdeposition changes. It also discusses the effects and causes of growth-related properties of films deposited by physical vapor deposition processes, including residual film stress, density, and adhesion.

This article introduces various techniques commonly used in the characterization of semiconductors, namely single-crystal, polycrystalline, amorphous, oxide, organic, and low-dimensional semiconductors and semiconductor devices. The discussion covers material classification, fabrication methods, sample preparation, bulk/elemental characterization methods, microstructural characterization methods, surface characterization methods, and electronic characterization methods.

This article reviews the types of passivity and presents tactics that employ passivity to control corrosion. Thermodynamics provides a guide to the conditions under which passivation becomes possible. A valuable guide to thermodynamics is the potential-pH diagram and the Pourbaix diagram. The article presents a potential-pH diagram for the iron-water system and an illustration of an idealized anodic polarization curve for a metal surface, which serves as a basis for describing the kinetics of passivation. It discusses five properties of passive films: thickness, composition, structure, electronic properties, and mechanical properties. The article outlines three possible processes that can form passive films: direct film formation, dissolution precipitation, and anodic oxidation of metal ions in solution. It describes the breakdown of the passive film using various models and highlighting the effect of alloy composition and structure.

This article discusses the basic principles of inductively coupled plasma mass spectrometry (ICP-MS), covering different instruments used for performing ICP-MS analysis. The instruments covered include the sample-introduction system, ICP ion source, mass analyzer, and ion detector. Emphasis is placed on ICP-MS applications in the semiconductor, photovoltaic, materials science, and other electronics and high-technology areas.

This article presents an overview of the electric and magnetic parameters and discusses the significance of these parameters for electronic applications. It describes the components of analog and digital electronic circuits. The article reviews the augmenting technologies: magnetic and special technologies such as electrooptical.

Sputtering is a nonthermal vaporization process in which the surface atoms are physically ejected from a surface by momentum transfer from an energetic bombarding species of atomic/molecular size. It uses a glow discharge or an ion beam to generate a flux of ions incident on the target surface. This article provides an overview of the advantages and limitations of sputter deposition. It focuses on the most common sputtering techniques, namely, diode sputtering, radio-frequency sputtering, triode sputtering, magnetron sputtering, and unbalanced magnetron sputtering. The article discusses the fundamentals of plasma formation and the interactions on the target surface. A comparison of reactive and nonreactive sputtering is also provided. The article concludes with a discussion on the several methods of process control and the applications of sputtered films.

This article describes the Schottky defect and the Frenkel defect in oxides. It provides information on the p-type metal-deficit oxides and n-type semiconductor oxides. The article discusses diffusion mechanisms and laws of diffusion proposed by Fick. It explains the oxide texture of amorphous and epitaxy oxide layers and presents equations for various oxidation reaction rates. The article reviews different theories to describe the oxidation mechanism. These include the Cabrera-Mott, Hauffe-IIschner, Grimley-Trapnell, Uhlig, and Wagner theories.

This article discusses the fundamentals of thermal vaporization and condensation and provides information on the various vaporization sources and methods of vacuum deposition. It offers an overview of reactive evaporation and its deposition techniques. The article also explains the advantages, limitations, and applications of vacuum deposition processes. Finally, it provides information on the gas evaporation process, its processing chamber, and related systems.

Ceramic materials serve important insulative, capacitive, conductive, resistive, sensor, electrooptic, and magnetic functions in a wide variety of electrical and electronic circuitry. This article focuses on various applications of advanced ceramics in both electric power and electronics industry, namely, dielectric, piezoelectric, ferroelectric, sensing, magnetic and superconducting devices.

Chemical-mechanical planarization (CMP) of metals is described as mechanically accelerated corrosion, erosion corrosion, or metallic corrosion enhanced by wear. This article reviews the history, process, chemistry, electrochemistry, and defect issues for CMP. It provides an overview of CMP through a schematic illustration of CMP process equipment. The applications of CMP to tungsten and copper alloys are of prime interest in the semiconductor industry. The article discusses copper CMP and tungsten CMP in detail and analyzes polishing mechanism during CMP by application of direct current potentiodynamic polarization and alternating current impedance measurements. It concludes with information on chemically induced defects such as pitting corrosion, galvanic corrosion, and chemical etching.

This article focuses on different thin-film deposition techniques used to make superconducting films and discusses the properties and advantages of high-critical-temperature and low-critical-temperature materials in a number of applications, including signal processing and analog electronic devices. The article gives a brief introduction on superconducting materials, substrates and buffer layers and discusses the major deposition techniques such as, electron-beam co-evaporation, sputtering from either a composite target or multiple sources and laser ablation. The article also describes the in-situ film growth techniques for producing atomic oxygen by radio frequency excitation or microwave discharge or with ozone.

Thermal spray processes involve complete or partial melting of a feedstock material in a high-temperature flame, and propelling and depositing the material as a coating on a substrate. This article describes the properties of sprayed electronic materials, including dielectrics, conductors, and resistors, and discusses their implications and associated limitations for device applications and potential remedial measures. The article presents specific examples of electrical/electronic device applications, including electromagnetic interference/radio-frequency interference shielding, planar microwave devices, waveguide devices, sensing devices, solid oxide fuel cells, heating elements, electrodes for capacitors and other electrochemical devices.

This article provides a summary of the concepts discussed in the articles under the Section “Fundamentals of Corrosion” in ASM Handbook, Volume 13A: Corrosion: Fundamentals, Testing, and Protection. In this section, the thermodynamic aspects of corrosion are descried first followed by a group of articles discussing the fundamentals of aqueous corrosion kinetics. The fundamentals of gaseous corrosion are addressed next. The fundamental electrochemical reactions of corrosion and their uses are finally described.

Vapor-deposition processes fall into two major categories, namely, physical vapor deposition (PVD) and chemical vapor deposition (CVD). This article describes major deposition processes such as sputtering, evaporation, ion plating, and CVD. The list of materials that can be vapor deposited is extensive and covers almost any coating requirement. The article provides a table of some corrosion-resistant vapor deposited materials. It concludes with an overview of the applications of CVD and PVD coatings and a discussion on coatings for graphite, the aluminum coating of steel, and alloy coatings for aircraft turbines, marine turbines, and industrial turbines.

Transmission electron microscopy (TEM) approach enables essentially simultaneous examination of microstructural features through imaging from lower magnifications to atomic resolution and the acquisition of chemical and crystallographic information from small regions of the thin specimen. This article discusses fundamentals of the technique, especially for solving materials problems. Background information is provided to help understand basic operations and principles, including instrumentation, the physics of signal generation and detection, image formation, electron diffraction, and spectrometry techniques with data analysis.

This article begins with a list of the factors that influence the properties of physical vapor deposited films. It describes the steps involved in ion plating, namely, surface preparation, nucleation, interface formation, and film growth. The article discusses the factors influencing the properties of ion-plated films. The sources of potential applied on substrate surface, bombarding species, and depositing species are addressed. The article also provides information on the parameters that influence bombardment. It concludes with a discussion on the advantages, limitations, and applications of ion plating.

This article discusses the basic principles of and chemical effects in Auger electron spectroscopy (AES), covering various factors affecting the quantitative analyses of AES. The discussion covers instrumentation and sophisticated electronics typically used in AES for data acquisition and manipulation and various limitations of AES. Various examples highlighting the capabilities of the technique are also included.

This article covers the three most popular techniques used to characterize the very outermost layers of solid surfaces: Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), and time-of-flight secondary ion mass spectrometry (TOF-SIMS). Some of the more important attributes are listed for preliminary insight into the strengths and limitations of these techniques for chemical characterization of surfaces. The article describes the basic theory behind each of the different techniques, the types of data produced from each, and some typical applications. Also discussed are the different types of samples that can be analyzed and the special sample-handling procedures that must be implemented when preparing to do failure analysis using these surface-sensitive techniques. Data obtained from different material defects are presented for each of the techniques. The examples presented highlight the typical data sets and strengths of each technique.