This article describes the vapor-phase growth techniques applied to the epitaxial deposition of semiconductor films and discusses the fundamental processes involved in metal-organic chemical vapor deposition (MOCVD). It reviews the thermodynamics that determine the driving force behind the overall growth process and the kinetics that define the rates at which the various processes occur. The article provides information on the reactor systems and hardware, MOCVD starting materials, engineering considerations that optimize growth, and the growth parameters for a variety of Group III-V, II-VI, and IV semiconductors.

This article describes eight stages of the atomistic film growth: vaporization of the material, transport of the material to the substrate, condensation and nucleation of the atoms, nuclei growth, interface formation, film growth, changes in structure during the deposition, and postdeposition changes. It also discusses the effects and causes of growth-related properties of films deposited by physical vapor deposition processes, including residual film stress, density, and adhesion.

Coatings and thin films can be studied with surface analysis methods because their inherently small depth allows characterization of the surface composition, interface composition, and in-depth distribution of composition. This article describes principles and examples of common surface analysis methods, namely, Auger electron spectroscopy, X-ray photoelectron spectroscopy, ion scattering spectroscopy, secondary ion mass spectroscopy, and Rutherford backscattering spectroscopy. It also provides useful information on the applications of surface analysis.

This article focuses on the evaluation of mechanical properties of freestanding films and films adherent to their substrates. Common methods of testing freestanding films, including uniaxial tensile testing, uniaxial creep testing, biaxial testing, and beam-bending methods, are discussed. For films which are adherent to their substrates, indentation testing is used to evaluate hardness, creep, and strength.

This article describes the structure of coatings produced by plasma spraying, vapor deposition, and electrodeposition processes. The main techniques used for microstructure assessment are introduced. The relationship between the microstructure and property is also discussed. The experimental techniques for microstructural characterization include metallographic technique, X-ray diffraction, electron, microscopies, and porosimetry.

This article introduces various techniques commonly used in the characterization of semiconductors, namely single-crystal, polycrystalline, amorphous, oxide, organic, and low-dimensional semiconductors and semiconductor devices. The discussion covers material classification, fabrication methods, sample preparation, bulk/elemental characterization methods, microstructural characterization methods, surface characterization methods, and electronic characterization methods.

This article begins with a list of the factors that influence the properties of physical vapor deposited films. It describes the steps involved in ion plating, namely, surface preparation, nucleation, interface formation, and film growth. The article discusses the factors influencing the properties of ion-plated films. The sources of potential applied on substrate surface, bombarding species, and depositing species are addressed. The article also provides information on the parameters that influence bombardment. It concludes with a discussion on the advantages, limitations, and applications of ion plating.

This article discusses the application of amorphous and crystalline films through plasma-enhanced chemical vapor deposition (PECVD) from the view point of microelectronic device fabrication. It describes the various types of PECVD reactors and deposition techniques. Plasma enhancement of the CVD process is discussed briefly. The article also describes the properties of amorphous and crystalline films deposited by the PECVD process for integrated circuit fabrication.

Ion-beam-assisted deposition (IBAD) refers to the process wherein evaporated atoms produced by physical vapor deposition are simultaneously struck by an independently generated flux of ions. This article discusses the energy utilization of this process. It describes the physical and chemical processes occurring at the film-vacuum interface during IBAD and dual-ion-beam sputtering with illustrations. The article also reviews the methods used for large-area, high-volume implementation of IBAD and the modes of film formation for IBAD. It contains a table that presents information on deposition and synthesis of inorganic compounds by IBAD and concludes with a discussion on the improved coating properties, advantages, limitations, and applications of IBAD.

Measuring the thickness of thin films can be accomplished in many ways. This article focuses on the optical method of single-wavelength ellipsometry, two multiple-wavelength methods of reflectometry and spectroscopic ellipsometry for measuring the thickness of thin films. The general capabilities, principles and applications of ellipsometry and reflectometry are discussed in terms of nondestructive methods.

Sputtering is a nonthermal vaporization process in which the surface atoms are physically ejected from a surface by momentum transfer from an energetic bombarding species of atomic/molecular size. It uses a glow discharge or an ion beam to generate a flux of ions incident on the target surface. This article provides an overview of the advantages and limitations of sputter deposition. It focuses on the most common sputtering techniques, namely, diode sputtering, radio-frequency sputtering, triode sputtering, magnetron sputtering, and unbalanced magnetron sputtering. The article discusses the fundamentals of plasma formation and the interactions on the target surface. A comparison of reactive and nonreactive sputtering is also provided. The article concludes with a discussion on the several methods of process control and the applications of sputtered films.

This article focuses on those areas of coatings technology where silicon-based technology (SBT) is the primary enabling technology and where SBT is used as an additive to provide unique properties to the coating film. It describes the chemistry and the uses of alkoxy silanes. The uses of silicates, siliconates, silicone fluids, and silicone resins in coatings are reviewed. The article discusses the various applications of SBT, namely, primers, heat-resistant coatings, industrial maintenance coatings, hygienic coatings, and abrasion-resistant coatings, and for marine biofouling control. It also provides information on the benefits of silicon-base additives.

This article provides a detailed account of the basic concepts of Rutherford backscattering spectrometry (RBS). It begins with a description of the principles of RBS, as well as the effect of channeling in conjunction with backscattering measurements and the effect of energy loss under this condition. This is followed by a section on equipment used in RBS analysis. Channel-energy conversion, energy-depth conversion, and separation of the dechanneling background are then discussed as the main steps of RBS data analysis. The article also discusses the applications of RBS—including composition of bulk samples, thin-film composition and layer thickness, impurity profiles, damage depth profile, and surface peak—as well as the various codes developed to simulate it.

Computed tomography (CT) is an imaging technique that generates a three-dimensional (3-D) volumetric image of a test piece. This article illustrates the basic principles of CT and provides information on the types, applications, and capabilities of CT systems. A comparison of performance characteristics for film radiography, real-time radiography, and X-ray computed tomography is presented in a table. A functional block diagram of a typical computed tomography system is provided. The article discusses CT scanning geometry that is used to acquire the necessary transmission data. It also provides information on digital radiography, image processing and analysis, dual-energy imaging, and partial angle imaging, of a CT system.

This article provides a description of the classification, industrial applications, microstructures, physical, chemical, corrosion, and mechanical properties of zirconium and its alloys. It discusses the formation of oxide films and the effects of water, temperature, and pH on zirconium. The delayed hydride cracking of zirconium is also described. The article provides information on the resistance of zirconium to various types of corrosion, including pitting corrosion, crevice corrosion, intergranular corrosion, galvanic corrosion, microbiologically induced corrosion, erosion-corrosion, and fretting corrosion. The article explains the effects of tin content in zirconium and effects of fabrication on corrosion. Corrosion control measures for all types of corrosion are also highlighted. The article concludes with information on the safety precautions associated with handling of zirconium.

Titanium alloys are often used in highly corrosive environments because they are better suited than most other materials. The excellent corrosion resistance is the result of naturally occurring surface oxide films that are stable, uniform, and adherent. This article offers explanations and insights on the most common forms of corrosion observed with titanium alloys, including general corrosion, crevice corrosion, anodic pitting, hydrogen damage, stress-corrosion cracking, galvanic corrosion, corrosion fatigue, and erosion-corrosion. It also provides practical strategies for expanding the useful application range for titanium and includes a comprehensive overview of available corrosion data.

Electrodeposition of tin alloys is used to protect steel against corrosion or wear, to impart resistance to etching, and to facilitate soldering. This article focuses on the compositions, operating conditions, advantages, and limitations of methane sulfonic acid plating solutions and fluoborate plating solutions for tin-lead. It briefly describes the solution compositions and operating conditions of tin-bismuth, tin-nickel, and tin-zinc.

This article discusses the basic principles of inductively coupled plasma mass spectrometry (ICP-MS), covering different instruments used for performing ICP-MS analysis. The instruments covered include the sample-introduction system, ICP ion source, mass analyzer, and ion detector. Emphasis is placed on ICP-MS applications in the semiconductor, photovoltaic, materials science, and other electronics and high-technology areas.

This article presents a general description of pulsed-laser deposition. It describes the components of pulsed-laser deposition equipment. The article also discusses the effects of angular distribution of materials. Finally, the article reviews the characteristics of high-temperature superconductors and ferroelectric materials.

Radiography is a nondestructive-inspection method that is based on the differential absorption of penetrating radiation by the part or test piece (object) being inspected. This article discusses the fundamentals and general applications of radiography, and describes the sources of radiation in radiographic inspection, including X-rays and gamma rays. It deals with the characteristics that differentiate neutron radiography from X-ray or gamma-ray radiography. The geometric principles of shadow formation, image conversion, variation of attenuation with test-piece thickness, and many other factors that govern the exposure and processing of a neutron radiograph are similar to those for radiography using X-rays or gamma rays.