1-20 of 353 Search Results for

semiconductor

Follow your search
Access your saved searches in your account

Would you like to receive an alert when new items match your search?
Close Modal
Sort by
Series: ASM Handbook
Volume: 13C
Publisher: ASM International
Published: 01 January 2006
DOI: 10.31399/asm.hb.v13c.a0004172
EISBN: 978-1-62708-184-9
... Abstract In a typical semiconductor integrated circuits (SICs) component, corrosion may be observed at the chip level and at the termination area of the lead frames that are plated with a solderable metal or alloy, such as tin and tin-lead alloys that are susceptible to corrosion. This article...
Series: ASM Handbook
Volume: 13C
Publisher: ASM International
Published: 01 January 2006
DOI: 10.31399/asm.hb.v13c.a0004171
EISBN: 978-1-62708-184-9
... that the factors outside the normal processing of wafers or tool-specific problems can contribute to metal-line corrosion. corrosion semiconductor wafer fabrication batch metal-etch systems single-wafer metal-etch systems metal-line corrosion THE MICROELECTRONICS INDUSTRY is one of the fastest...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006670
EISBN: 978-1-62708-213-6
... Abstract This article introduces various techniques commonly used in the characterization of semiconductors, namely single-crystal, polycrystalline, amorphous, oxide, organic, and low-dimensional semiconductors and semiconductor devices. The discussion covers material classification...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001284
EISBN: 978-1-62708-170-2
... Abstract This article describes the vapor-phase growth techniques applied to the epitaxial deposition of semiconductor films and discusses the fundamental processes involved in metal-organic chemical vapor deposition (MOCVD). It reviews the thermodynamics that determine the driving force behind...
Image
Published: 01 January 1986
Fig. 40 PLAP analysis of a ternary 3:5 semiconductor. Source: Ref 16 More
Image
Published: 01 January 1989
Fig. 10 Diamond abrasive machining operations used to fabricate semiconductor components More
Image
Published: 01 January 1990
Fig. 8 LEC-grown GaAs ingot and wafers. Courtesy of Morgan Semiconductor Division of Ethyl Corporation More
Image
Published: 01 January 2006
Fig. 2 Generic process flow of a semiconductor device. Key areas where corrosion could occur are shown. PMC refers to post mold cure, a process whereby the encapsulant (molding compound) is further cured. More
Image
Published: 01 January 2003
Fig. 1 Micrographs of semiconductor device cross sections. (a) 1.0 μm technology; two metal layers made before the advent of chemical-mechanical planarization (CMP). (b) 0.25 μm technology; five metal layers, using CMP technology. Tungsten vias provide electrical connection between layers. More
Image
Published: 09 June 2014
Fig. 5 Common power semiconductor types, with power ranges and switching frequencies. IGBT, insulated-gate bipolar transistor; MOSFET, metal-oxide semiconductor field-effect transistor More
Image
Published: 09 June 2014
Fig. 6 Metal-oxide semiconductor field-effect transistors (MOSFETs) and insulated-gate bipolar transistors (IGBTs). Courtesy of Radyne Corporation More
Image
Published: 01 November 1995
Fig. 10 Diamond abrasive machining operations used to fabricate semiconductor components More
Image
Published: 01 November 1995
Fig. 36 Conductimetric (semiconductor) oxygen sensors based on (a) thin-film oxide semiconductor and (b) thick-film oxide semiconductor. Source: Ref 110 , 111 More
Image
Published: 15 December 2019
Fig. 14 Schematic diagrams of silicon-lithium semiconductor x-ray detector used in an energy-dispersive x-ray spectrometer More
Image
Published: 15 December 2019
Fig. 7 Principle of the semiconductor silicon drift detector energy dispersive x-ray spectrometer (SDD-EDS) with the spectrum of YBa 2 Cu 3 O 7 -0.4wt%Al More
Image
Published: 15 December 2019
Fig. 38 Curtaining effects demonstrated in a cross section of a semiconductor device that was cross sectioned by a gallium beam and imaged with a scanning electron microscope. The bright structures are tungsten interconnects, and these are largely responsible for the curtaining effects seen More
Image
Published: 01 January 1997
Fig. 2 Voltage-current characteristic of a semiconductor junction. Source: Ref 9 More
Image
Published: 30 June 2023
Fig. 6 Three designs of a manifold in the semiconductor industry. (a) Conventional design made of polyetheretherketone with hoses (110 g). (b) Monolithic design milled in TiGr5 (200 g). (c) Optimized design printed in TiGr5 (100 g). Adapted from Ref 26 More
Series: ASM Handbook
Volume: 13A
Publisher: ASM International
Published: 01 January 2003
DOI: 10.31399/asm.hb.v13a.a0003600
EISBN: 978-1-62708-182-5
... of CMP through a schematic illustration of CMP process equipment. The applications of CMP to tungsten and copper alloys are of prime interest in the semiconductor industry. The article discusses copper CMP and tungsten CMP in detail and analyzes polishing mechanism during CMP by application of direct...
Image
Published: 01 January 1986
Fig. 1 Flow chart of inorganic solids: metals, alloys, semiconductors. Acronyms are defined in Table 10 . More