Search Results for semiconductor

In a typical semiconductor integrated circuits (SICs) component, corrosion may be observed at the chip level and at the termination area of the lead frames that are plated with a solderable metal or alloy, such as tin and tin-lead alloys that are susceptible to corrosion. This article focuses on the key factors contributing to corrosion of electronic components, namely, chemicals (salts containing halides, sulfides, acids, and alkalis), temperature, air (polluted air), moisture, contact between dissimilar metals in a wet condition, applied potential differences, and stress. It discusses the chip corrosion and oxidation of tin and tin-lead alloys (solders) in SIC. The article also addresses the corrosion of the device terminations resulting in lead (termination) tarnishing that are caused by various factors, including galvanic corrosion, chemical residues, base metal migration and plating additives.

This article presents a detailed examination of corrosion at the various production stages of wafer fabrication. The corrosion issues related to batch metal-etch systems and single-wafer metal-etch systems are also discussed. The article provides a case study, which illustrates that the factors outside the normal processing of wafers or tool-specific problems can contribute to metal-line corrosion.

This article describes the vapor-phase growth techniques applied to the epitaxial deposition of semiconductor films and discusses the fundamental processes involved in metal-organic chemical vapor deposition (MOCVD). It reviews the thermodynamics that determine the driving force behind the overall growth process and the kinetics that define the rates at which the various processes occur. The article provides information on the reactor systems and hardware, MOCVD starting materials, engineering considerations that optimize growth, and the growth parameters for a variety of Group III-V, II-VI, and IV semiconductors.

This article introduces various techniques commonly used in the characterization of semiconductors, namely single-crystal, polycrystalline, amorphous, oxide, organic, and low-dimensional semiconductors and semiconductor devices. The discussion covers material classification, fabrication methods, sample preparation, bulk/elemental characterization methods, microstructural characterization methods, surface characterization methods, and electronic characterization methods.

Chemical-mechanical planarization (CMP) of metals is described as mechanically accelerated corrosion, erosion corrosion, or metallic corrosion enhanced by wear. This article reviews the history, process, chemistry, electrochemistry, and defect issues for CMP. It provides an overview of CMP through a schematic illustration of CMP process equipment. The applications of CMP to tungsten and copper alloys are of prime interest in the semiconductor industry. The article discusses copper CMP and tungsten CMP in detail and analyzes polishing mechanism during CMP by application of direct current potentiodynamic polarization and alternating current impedance measurements. It concludes with information on chemically induced defects such as pitting corrosion, galvanic corrosion, and chemical etching.