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polycrystalline silicon films

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Series: ASM Handbook
Volume: 18
Publisher: ASM International
Published: 31 December 2017
DOI: 10.31399/asm.hb.v18.a0006360
EISBN: 978-1-62708-192-4
... of tungsten-containing hydrogenated amorphous carbon films, deposition of tetrahedral amorphous carbon films, and deposition of silicon-incorporated hydrogenated amorphous carbon films. The most common deposition technologies for diamond films are also discussed. The article provides information on surface...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001285
EISBN: 978-1-62708-170-2
... TaCl 5 , SiH 2 Cl 2 + H 2 580 1080 900 °C (1650 °F) for 60 min in Ar 54 TiSi 2 TaCl 4 , SiH 4 + H 2 300–500 570–930 650 °C (1200 °F) for 5 min 55 Fig. 4 Arrhenius plots of growth rates of polycrystalline silicon films deposited on oxidized silicon wafers with and without...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006670
EISBN: 978-1-62708-213-6
... for these purposes are polycrystalline or amorphous. Oxides such as indium tin zinc oxide have also been used within the thin film transistor structures for displays, including large-format OLEDs such as those in televisions, because they are less expensive than their amorphous silicon counterparts. Another...
Series: ASM Handbook Archive
Volume: 10
Publisher: ASM International
Published: 01 January 1986
DOI: 10.31399/asm.hb.v10.a0001757
EISBN: 978-1-62708-178-8
..., and the sample is polycrystalline, the film would show a set of concentric rings, known as Debye rings. In this case, the d -spacing (see the section “Introduction” in this article) can be calculated using: (Eq 2) θ = arctan ( R D ) where R is the radius of the Debye ring, and D...
Series: ASM Handbook Archive
Volume: 10
Publisher: ASM International
Published: 01 January 1986
DOI: 10.31399/asm.hb.v10.a0001760
EISBN: 978-1-62708-178-8
... of plastic deformation incurred by polycrystalline materials subjected to various types of mechanical stressing. Topographic imaging techniques aid investigation of heterojunctions. Topographs can be taken of samples prepared with single or multiple films to reveal the misfit dislocations and other...
Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0001106
EISBN: 978-1-62708-162-7
... showing the principal known superhard materials: the diamond form of carbon, cubic BN, SiC, and B 4 C. Polycrystalline aggregates of diamond and SiC as well as Si 3 N 4 are also commercially available. The carbides of the metalloids boron and silicon (B 4 C and SiC in Fig. 1 ) are also...
Series: ASM Desk Editions
Publisher: ASM International
Published: 01 November 1995
DOI: 10.31399/asm.hb.emde.a0003049
EISBN: 978-1-62708-200-6
... Deutscher Verlag für Grundstoffindustrie, Leipzig, East Germany , 1965 3. Lucas J. and Moynihan C.T. , Halide Glasses , Trans Tech Publications, Aedermannsdorf , Sweden , 1986 4. Spear W.E. , The Study of Transport and Related Properties of Amorphous Silicon by Transient...
Series: ASM Handbook
Volume: 9
Publisher: ASM International
Published: 01 December 2004
DOI: 10.31399/asm.hb.v09.a0003744
EISBN: 978-1-62708-177-1
... 10.1016/S0921-5093(01)01393-4 6. Reade R.P. , Berdahl P. , Russo R.E. , and Garrison S.M. , Laser Deposition of Biaxially Textured Yttria-Stabilized Zirconia Buffer Layers on Polycrystalline Metallic Alloys for High Critical Current Y-Ba-Cu-O Thin-Films , Appl. Phys. Lett...
Series: ASM Handbook Archive
Volume: 10
Publisher: ASM International
Published: 01 January 1986
DOI: 10.31399/asm.hb.v10.a0001774
EISBN: 978-1-62708-178-8
... for a silicon substrate upon which an organometallic silicate film (∼100 nm thick) has been deposited. In contrast to the spectra shown in Fig. 6 , 7 , and 8 , this spectrum was obtained in an ion microprobe using an argon primary ion beam and an energy-filtered quadrupole mass spectrometer. Due to the oxide...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006683
EISBN: 978-1-62708-213-6
.... (a) Recorded without a voltage offset. (b) Recorded with a voltage offset to reject low-energy molecular secondary ions Fig. 9 Positive secondary ion mass spectroscopy spectra for an organometallic silicate film deposited on a silicon substrate acquired using a scanning ion microprobe under inert...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001320
EISBN: 978-1-62708-170-2
... of low-alloy steel Fig. 1 Relative machining application ranges of cutting tool materials Abstract Abstract The classes of tool materials for machining operations are high-speed tool steels, carbides, cermets, ceramics, polycrystalline cubic boron nitrides, and polycrystalline diamonds...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006656
EISBN: 978-1-62708-213-6
... advanced, curved PSDs with a 2θ range of up to 120° provided a fast electronic detector capable of being used in a Debye-Scherrer geometry instrument, a potential but costly replacement for film. More recently, another line detector that has been developed is a silicon strip detector comprised of diodes...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006680
EISBN: 978-1-62708-213-6
... for crystallinity. If the film is polycrystalline and has preferred orientation, the observed diffraction lines have discontinuous rather than continuous arcs. The extent of these arcs indicates the degree of preferred orientation of the crystalline layer. As the texture becomes stronger, the arcs become sharper...
Series: ASM Handbook
Volume: 18
Publisher: ASM International
Published: 31 December 2017
DOI: 10.31399/asm.hb.v18.a0006380
EISBN: 978-1-62708-192-4
... of water. Without lubricative water films, the friction coefficient and wear of ceramics such as alumina and silicon nitride increases. At temperatures over approximately 800 °C (1470 °F), there may be sufficient soft glassy phases formed during sliding to create beneficial third-body layers...
Series: ASM Handbook
Volume: 13B
Publisher: ASM International
Published: 01 January 2005
DOI: 10.31399/asm.hb.v13b.a0003836
EISBN: 978-1-62708-183-2
... 10 P 13 X 7 alloys in 0.1 N H 2 SO 4 at 30 °C (85 °F), where (a) X is silicon, boron, carbon, and phosphorus, and (b) X is silicon, boron, and carbon. Source: Ref 78 Fig. 5 Effect of the chromium content on the corrosion rates of amorphous Ni-Cr-P 15 B 5 alloys in 10% FeCl 3...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006643
EISBN: 978-1-62708-213-6
... wavelength. Crystals of graphite, silicon, germanium, and quartz often are used for this purpose. A sequence of multiple crystals can be employed to narrow the bandwidth. On laboratory tubes, one of the characteristic lines (e.g., Kα 1 ) can be selected. Thin-film multilayers (alternating thin layers...
Series: ASM Handbook
Volume: 9
Publisher: ASM International
Published: 01 December 2004
DOI: 10.31399/asm.hb.v09.a0009074
EISBN: 978-1-62708-177-1
... sectioned with the diamond saw, it is ready to be polished. The diamond blade will provide a 320-grit equivalent roughness. Polishing is best performed using 1 μm polycrystalline diamond suspension. It is important not to use silicon carbide papers, because these will induce deep cracks in the specimen...
Series: ASM Desk Editions
Publisher: ASM International
Published: 01 November 1995
DOI: 10.31399/asm.hb.emde.a0003059
EISBN: 978-1-62708-200-6
...Abstract Abstract This article provides crystallographic and engineering data for single oxide ceramics, zirconia, silicates, mullite, spinels, perovskites, borides, carbides, silicon carbide, boron carbide, tungsten carbide, silicon-nitride ceramics, diamond, and graphite. It includes data...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006655
EISBN: 978-1-62708-213-6
... diffraction is limited to the analysis of surfaces of single crystals and overlayers as well as films on such surfaces. If a polycrystalline sample is illuminated by using a beam of low-energy electrons, each crystallite surface exposed will create its own diffraction pattern, all of which...
Series: ASM Handbook Archive
Volume: 10
Publisher: ASM International
Published: 01 January 1986
DOI: 10.31399/asm.hb.v10.a0001756
EISBN: 978-1-62708-178-8
... Chemical kinetics State of polycrystalline aggregate Preferred orientation Texture (a) Source: Ref 3 Line profile<xref rid="a0001756-t5-fn1" ref-type="table-fn">(a)</xref> Table 5 Line profile (a) Controlled by: State of crystallite perfection and sample...