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metal-oxide semiconductor field-effect transistors
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in Power Supplies for Induction Heat Treating, Brazing, and Soldering
> Induction Heating and Heat Treatment
Published: 09 June 2014
Fig. 6 Metal-oxide semiconductor field-effect transistors (MOSFETs) and insulated-gate bipolar transistors (IGBTs). Courtesy of Radyne Corporation
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Series: ASM Handbook
Volume: 4C
Publisher: ASM International
Published: 09 June 2014
DOI: 10.31399/asm.hb.v04c.a0005836
EISBN: 978-1-62708-167-2
... Abstract This article reviews the performance of power electronics components, namely, power rectifiers, insulated-gate bipolar transistors, metal-oxide semiconductor field-effect transistors, diodes, and silicon-controlled rectifiers. It provides information on induction heating power supplies...
Abstract
This article reviews the performance of power electronics components, namely, power rectifiers, insulated-gate bipolar transistors, metal-oxide semiconductor field-effect transistors, diodes, and silicon-controlled rectifiers. It provides information on induction heating power supplies with multiple heat stations, such as switching units and multiple (zone) outputs. The article describes power supply operational control and power supply protection circuits. It details duty cycle, power factor, and harmonics of power supplies. The article also describes system parameters, software analysis-calculations, human analysis-decisions, multiple system arrangements, and zone control systems for power supply selection. It provides information on the maintenance of induction power supplies, detailing the safety precautions to be taken and the need for routine inspection and servicing.
Series: ASM Handbook
Volume: 4C
Publisher: ASM International
Published: 09 June 2014
DOI: 10.31399/asm.hb.v04c.a0005838
EISBN: 978-1-62708-167-2
... switching devices, namely, silicon-controlled rectifiers, insulated-gate bipolar transistors, and metal-oxide semiconductor field-effect transistors. The article also provides information on frequency-multiplication harmonic-induction power supplies, namely, push-pull and half-bridge inverters and full...
Abstract
This article provides a brief description of load conditions for single-shot heat treating, vertical scanning, and brazing and soldering. It discusses the various power components used in power supplies. These include capacitors, integrated power module, transformers, and various switching devices, namely, silicon-controlled rectifiers, insulated-gate bipolar transistors, and metal-oxide semiconductor field-effect transistors. The article also provides information on frequency-multiplication harmonic-induction power supplies, namely, push-pull and half-bridge inverters and full-bridge inverters. Series resonant and parallel resonant circuits and their tuning calculations associated with output networks are also discussed. The article describes the frequency range of simultaneous dual-frequency induction heating power supply, and discusses the advantages, applications, and technical background of independently controlled frequency and power (IFP) induction heating power supply. It concludes with a description of the developments in control systems for modern induction power supplies.
Image
in Fundamentals and General Aspects of Power Supply Design for Induction Heating, Heat Treating, Welding, and Melting
> Induction Heating and Heat Treatment
Published: 09 June 2014
Fig. 5 Common power semiconductor types, with power ranges and switching frequencies. IGBT, insulated-gate bipolar transistor; MOSFET, metal-oxide semiconductor field-effect transistor
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in Fundamentals and General Aspects of Power Supply Design for Induction Heating, Heat Treating, Welding, and Melting
> Induction Heating and Heat Treatment
Published: 09 June 2014
Fig. 10 Diagram comparing structures of the insulated-gate bipolar transistor (IGBT) and the metal-oxide semiconductor field-effect transistor (MOSFET)
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Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006670
EISBN: 978-1-62708-213-6
... perspective, semiconductors form the active material components of structures whose electrical behavior, such as resistance, can be controlled through external stimulation, such as the gate voltage applied to a metal-oxide-semiconductor field-effect transistor (MOSFET) or visible light illumination...
Abstract
This article introduces various techniques commonly used in the characterization of semiconductors, namely single-crystal, polycrystalline, amorphous, oxide, organic, and low-dimensional semiconductors and semiconductor devices. The discussion covers material classification, fabrication methods, sample preparation, bulk/elemental characterization methods, microstructural characterization methods, surface characterization methods, and electronic characterization methods.
Series: ASM Handbook
Volume: 6
Publisher: ASM International
Published: 01 January 1993
DOI: 10.31399/asm.hb.v06.a0001337
EISBN: 978-1-62708-173-3
... semiconductor field-effect transistor) and IGBT devices in various switch mode regulators. In a three-phase input unit, a standard technique is to place the switching control in the primary neutral conductor of the HV transformer ( Fig. 11 ). The secondary circuitry is three-phase or six-phase, full-wave...
Abstract
Power sources are apparatuses that are used to supply current and voltages that are suitable for particular welding processes. This article describes power sources for arc welding, resistance welding, and electron-beam welding. The more-common welding processes that use constant-current and constant-voltage power sources are listed in a table. The article describes the open-circuit voltage characteristics and power source control methods. The control methods employ either pulse width modulation (PWM) or frequency modulation (FM).
Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0001090
EISBN: 978-1-62708-162-7
... properties. Its first significant use was in solid-state electronics, and with it the transistor was invented. Indeed, the entire modern field of semiconductors owes its development to the early successful use of germanium. Germanium is still used in the field of electronics, but its use in the field...
Abstract
Germanium is a semiconducting metalloid element found in Group IV A. Germanium is used in the field of electronics, infrared optics, and in the fields of gamma ray spectroscopy, catalysis, and fiber optics. This article discusses the sources, manufacturing, and processing of germanium, and focuses on the chemical properties of various germanium compounds, including germanium halides, germanates, germanides, germanes, inorganic, and organogermanium compounds. It also tabulates the physical, thermal, electronic, and optical properties of germanium, and explains the economical aspects and specifications of germanium. The article describes the analytical and test methods of germanium, including gravimetric method, titrimetric method, and spectral method. It provides a short note on toxicology, and concludes with the uses of germanium in different fields.
Series: ASM Desk Editions
Publisher: ASM International
Published: 01 November 1995
DOI: 10.31399/asm.hb.emde.a0003062
EISBN: 978-1-62708-200-6
... insulators are required to isolate all electrical circuits ( Ref 1 , 2 , 3 ). Most ceramics and glasses are electrical insulators at room temperature, that is, they are nonconducting and do not permit passage of an electrical current when placed in an electric field. Most oxides and silicates...
Abstract
Ceramic materials serve important insulative, capacitive, conductive, resistive, sensor, electrooptic, and magnetic functions in a wide variety of electrical and electronic circuitry. This article focuses on various applications of advanced ceramics in both electric power and electronics industry, namely, dielectric, piezoelectric, ferroelectric, sensing, magnetic and superconducting devices.
Book: Surface Engineering
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001285
EISBN: 978-1-62708-170-2
... ). Polycrystalline Silicon Films Polycrystalline silicon is used as the gate electrode in metal-oxide semiconductor devices and as the emitter in bipolar devices. It is also used as interconnect material in ICs. In commercial manufacturing of ICs, polycrystalline silicon is deposited by thermally driven LPCVD...
Abstract
This article discusses the application of amorphous and crystalline films through plasma-enhanced chemical vapor deposition (PECVD) from the view point of microelectronic device fabrication. It describes the various types of PECVD reactors and deposition techniques. Plasma enhancement of the CVD process is discussed briefly. The article also describes the properties of amorphous and crystalline films deposited by the PECVD process for integrated circuit fabrication.
Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0001091
EISBN: 978-1-62708-162-7
.... Gallium oxide is used in making single-crystal garnets for special applications. As used in the electronics industry, the term garnet refers to compounds of mixed M 2 O 3 metal oxides. Gallium gadolinium garnet (GGG) is used as the substrate for a bubble memory device. The single crystals are produced...
Abstract
Gallium-base components can be found in a variety of products ranging from compact disk players to advanced military electronic warfare systems, owing to the factor that it can emit light, has a greater resistance to radiation and operates at faster speeds and higher temperatures. This article discusses the uses of gallium in optoelectronic devices and integrated circuits and applications of gallium. The article discusses the properties and grades of gallium arsenide and also provides information on resources of gallium. The article talks about the recovery techniques, including recovery from bauxite, zinc ore and secondary recovery process and purification. The article briefly describes the fabrication process of gallium arsenide crystals. Furthermore, the article gives a short note on world supply and demand of gallium and concludes with research and development on gallium arsenide integrated circuits.
Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0001092
EISBN: 978-1-62708-162-7
... conductivity of junctions of these metals while acting as a metallic seal against corrosion. Semiconductors With the invention of the germanium transistor in 1946, a major new market for indium developed in the production of alloy junction transistors. In these transistors, indium is used in the P-N...
Abstract
This article focuses on the use of indium and bismuth in low-melting-temperature solders and fusible alloys. It describes how the two elements typically occur in nature and how they are recovered and processed for commercial use. It also provides information on designations, classification, composition, properties (including temperatures ranges), and some of the other ways in which indium and bismuth alloys are used.
Series: ASM Handbook
Volume: 4C
Publisher: ASM International
Published: 09 June 2014
DOI: 10.31399/asm.hb.v04c.a0005895
EISBN: 978-1-62708-167-2
... in various nonmetallic applications, such as the melting of glasses, oxides, or ceramics, as well as in the semiconductor industry, where induction melting technologies are widely used for the crystal growing of semiconductors. In the metal producing and processing industries, induction melting...
Abstract
In the metal producing and processing industries, induction melting and holding has found wide acceptance. This article provides a detailed account of the physical principles of induction melting processes. It discusses the fundamental principles and components of induction furnaces such as induction crucible furnaces, channel induction furnaces, and induction furnaces with cold crucible. The article describes the advantages, applications, and fundamental principles of induction skull melting. It also provides information on the various specific application-designed induction melting installations.
Series: ASM Handbook
Volume: 9
Publisher: ASM International
Published: 01 December 2004
DOI: 10.31399/asm.hb.v09.a0003755
EISBN: 978-1-62708-177-1
... depth of field but is also caused by the fact that the Everhart-Thornley detector attracts SEs from regions hidden from the detector (e.g., the far side of a sample or from inside cavities). At an edge, more SEs can exit the specimen, leading to a bright appearance of this feature (edge effect...
Abstract
This article outlines the beam/sample interactions and the basic instrumental design of a scanning electron microscopy (SEM), which include the electron gun, probeforming column (consisting of magnetic electron lenses, apertures, and scanning coils), electron detectors, and vacuum system. It discusses the contrasts mechanisms used for imaging and analyzing materials in the SEM. These include the topographic contrast, compositional contrast, and electron channeling pattern and orientation contrast. Special instrumentation and accessory equipment used at elevated pressures and during the X-ray microanalysis are reviewed. The article also provides information on the sample preparation procedure and the materials applications of the SEM.
Series: ASM Handbook
Volume: 4C
Publisher: ASM International
Published: 09 June 2014
DOI: 10.31399/asm.hb.v04c.a0005907
EISBN: 978-1-62708-167-2
...; and Institute of Electrotechnology of Leibniz, University of Hannover. The research field encompasses advanced IFCC models and the latest results (for the melting of metals and alloys with high electrical conductivity as well as for skull melting of glasses, ceramics, and oxides with low electrical...
Abstract
This article provides an overview of the models of two induction heating devices, namely, induction crucible furnace (ICF) and induction furnace with slits, or segmented and water-cooled induction furnace with cold crucible (IFCC). These devices are used for melting with skull formation of low-conductivity materials such as glasses and oxides. The article presents the governing equations and boundary conditions for ICF and IFCC modeling. It includes a discussion on three electromagnetic field models in IFCC, namely, two-dimensional (2-D), quasi-three-dimensional, and three-dimensional (3-D) models. The article provides information on the simulation of skull formation in IFCC, and elucidates the transient axisymmetrical 2-D model and the transient 3-D model, including the primary results achieved for both glasses and skull formation.
Book: Surface Engineering
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001233
EISBN: 978-1-62708-170-2
... roughness ( Ref 22 ). The electrical discharge texturing system incorporates an RF monitoring and controlling unit, a unique gap voltage measuring circuitry, and MOSFET (metal oxide semiconductor field-effect transistors) for power switching. In another attempt to achieve good surface finish by EDM...
Abstract
Nontraditional finishing processes include electrochemical machining (ECM), electrodischarge machining (EDM), and laser beam machining. These processes belong to nonabrasive finishing methods where surface generation occurs with an insignificant amount of mechanical interaction between the processing tool and the workpiece surfaces. This article provides information on the equipment used, applications, process capabilities, and limitations of ECM and EDM.
Book Chapter
Series: ASM Handbook
Volume: 24A
Publisher: ASM International
Published: 30 June 2023
DOI: 10.31399/asm.hb.v24A.a0006980
EISBN: 978-1-62708-439-0
... but may clog the nozzle. Inkjet printing is preferable for organic semiconductors mostly on planar substrates such as organic field-effect transistors ( Ref 117 , 118 ) and organic light-emitting diodes ( Ref 119 – 121 ). The aerosol jet process works by the vaporization of ink to produce droplets...
Abstract
Additive manufacturing (AM) has been adopted as one of the most versatile and rapid design-to-manufacturing approaches for printing a wide range of two- and three-dimensional parts, devices, and complex geometries layer by layer. This article provides insights into the current progress, challenges, and future needs of AM of electronics from the space, defense, biomedical, energy, and industry perspectives.
Series: ASM Handbook
Volume: 24
Publisher: ASM International
Published: 15 June 2020
DOI: 10.31399/asm.hb.v24.a0006554
EISBN: 978-1-62708-290-7
... field effect transistors (FETs) is possible; however, there are shortcomings with using this approach for active components ( Ref 1 ). The performance of the materials in printed form is inferior. The transistors are more than 1000 times larger, and the speed of printing is 1000 times slower than using...
Abstract
This article is a detailed account of the advantages, disadvantages, and applications of microdispensing processes used in electronics manufacturing industries. The discussion covers various approaches to control material flow, namely time pressure, auger, positive displacement, and progressive cavity pump dispensing. The concept of valving to control starting and stopping is also discussed. The applications include printing solders in microelectronic packaging, printing to pads, printing conductive patterns for antennas, printing active circuits, printing on flexible surfaces, and structural printing.
Series: ASM Desk Editions
Publisher: ASM International
Published: 01 November 1995
DOI: 10.31399/asm.hb.emde.9781627082006
EISBN: 978-1-62708-200-6
Series: ASM Handbook
Volume: 4C
Publisher: ASM International
Published: 09 June 2014
DOI: 10.31399/asm.hb.v04c.a0005899
EISBN: 978-1-62708-167-2
... system to warn of accumulations of metal (caused by penetration effects through cracks or infiltration) between the wear crucible and coil grouting, before a damaging electrical contact can be made between the penetrated metal and the coil itself. Fig. 9 Demonstration piece for a high-power...
Abstract
This article provides a detailed discussion on the components of a high-performance induction crucible furnace system, namely, furnace body, power supply, and peripheral components. The furnace body contains refractory lining, coil and transformer yokes, and tilting frame and furnace cover. The power supply consists of the following: transformers, frequency converters, capacitor banks, and power cables and furnace coils. The peripheral components comprise recooling device, charging system, and skimming devices. The article also presents a three-dimensional representation of the induction crucible furnace system.
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