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metal-oxide semiconductor field-effect transistors

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Published: 09 June 2014
Fig. 6 Metal-oxide semiconductor field-effect transistors (MOSFETs) and insulated-gate bipolar transistors (IGBTs). Courtesy of Radyne Corporation More
Series: ASM Handbook
Volume: 4C
Publisher: ASM International
Published: 09 June 2014
DOI: 10.31399/asm.hb.v04c.a0005836
EISBN: 978-1-62708-167-2
... Abstract This article reviews the performance of power electronics components, namely, power rectifiers, insulated-gate bipolar transistors, metal-oxide semiconductor field-effect transistors, diodes, and silicon-controlled rectifiers. It provides information on induction heating power supplies...
Series: ASM Handbook
Volume: 4C
Publisher: ASM International
Published: 09 June 2014
DOI: 10.31399/asm.hb.v04c.a0005838
EISBN: 978-1-62708-167-2
... switching devices, namely, silicon-controlled rectifiers, insulated-gate bipolar transistors, and metal-oxide semiconductor field-effect transistors. The article also provides information on frequency-multiplication harmonic-induction power supplies, namely, push-pull and half-bridge inverters and full...
Image
Published: 09 June 2014
Fig. 5 Common power semiconductor types, with power ranges and switching frequencies. IGBT, insulated-gate bipolar transistor; MOSFET, metal-oxide semiconductor field-effect transistor More
Image
Published: 09 June 2014
Fig. 10 Diagram comparing structures of the insulated-gate bipolar transistor (IGBT) and the metal-oxide semiconductor field-effect transistor (MOSFET) More
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006670
EISBN: 978-1-62708-213-6
... perspective, semiconductors form the active material components of structures whose electrical behavior, such as resistance, can be controlled through external stimulation, such as the gate voltage applied to a metal-oxide-semiconductor field-effect transistor (MOSFET) or visible light illumination...
Series: ASM Handbook
Volume: 6
Publisher: ASM International
Published: 01 January 1993
DOI: 10.31399/asm.hb.v06.a0001337
EISBN: 978-1-62708-173-3
... semiconductor field-effect transistor) and IGBT devices in various switch mode regulators. In a three-phase input unit, a standard technique is to place the switching control in the primary neutral conductor of the HV transformer ( Fig. 11 ). The secondary circuitry is three-phase or six-phase, full-wave...
Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0001090
EISBN: 978-1-62708-162-7
... properties. Its first significant use was in solid-state electronics, and with it the transistor was invented. Indeed, the entire modern field of semiconductors owes its development to the early successful use of germanium. Germanium is still used in the field of electronics, but its use in the field...
Series: ASM Desk Editions
Publisher: ASM International
Published: 01 November 1995
DOI: 10.31399/asm.hb.emde.a0003062
EISBN: 978-1-62708-200-6
... insulators are required to isolate all electrical circuits ( Ref 1 , 2 , 3 ). Most ceramics and glasses are electrical insulators at room temperature, that is, they are nonconducting and do not permit passage of an electrical current when placed in an electric field. Most oxides and silicates...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001285
EISBN: 978-1-62708-170-2
... ). Polycrystalline Silicon Films Polycrystalline silicon is used as the gate electrode in metal-oxide semiconductor devices and as the emitter in bipolar devices. It is also used as interconnect material in ICs. In commercial manufacturing of ICs, polycrystalline silicon is deposited by thermally driven LPCVD...
Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0001091
EISBN: 978-1-62708-162-7
.... Gallium oxide is used in making single-crystal garnets for special applications. As used in the electronics industry, the term garnet refers to compounds of mixed M 2 O 3 metal oxides. Gallium gadolinium garnet (GGG) is used as the substrate for a bubble memory device. The single crystals are produced...
Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0001092
EISBN: 978-1-62708-162-7
... conductivity of junctions of these metals while acting as a metallic seal against corrosion. Semiconductors With the invention of the germanium transistor in 1946, a major new market for indium developed in the production of alloy junction transistors. In these transistors, indium is used in the P-N...
Series: ASM Handbook
Volume: 4C
Publisher: ASM International
Published: 09 June 2014
DOI: 10.31399/asm.hb.v04c.a0005895
EISBN: 978-1-62708-167-2
... in various nonmetallic applications, such as the melting of glasses, oxides, or ceramics, as well as in the semiconductor industry, where induction melting technologies are widely used for the crystal growing of semiconductors. In the metal producing and processing industries, induction melting...
Series: ASM Handbook
Volume: 4C
Publisher: ASM International
Published: 09 June 2014
DOI: 10.31399/asm.hb.v04c.a0005907
EISBN: 978-1-62708-167-2
...; and Institute of Electrotechnology of Leibniz, University of Hannover. The research field encompasses advanced IFCC models and the latest results (for the melting of metals and alloys with high electrical conductivity as well as for skull melting of glasses, ceramics, and oxides with low electrical...
Series: ASM Handbook
Volume: 9
Publisher: ASM International
Published: 01 December 2004
DOI: 10.31399/asm.hb.v09.a0003755
EISBN: 978-1-62708-177-1
... depth of field but is also caused by the fact that the Everhart-Thornley detector attracts SEs from regions hidden from the detector (e.g., the far side of a sample or from inside cavities). At an edge, more SEs can exit the specimen, leading to a bright appearance of this feature (edge effect...
Series: ASM Handbook
Volume: 24A
Publisher: ASM International
Published: 30 June 2023
DOI: 10.31399/asm.hb.v24A.a0006980
EISBN: 978-1-62708-439-0
... but may clog the nozzle. Inkjet printing is preferable for organic semiconductors mostly on planar substrates such as organic field-effect transistors ( Ref 117 , 118 ) and organic light-emitting diodes ( Ref 119 – 121 ). The aerosol jet process works by the vaporization of ink to produce droplets...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001233
EISBN: 978-1-62708-170-2
... roughness ( Ref 22 ). The electrical discharge texturing system incorporates an RF monitoring and controlling unit, a unique gap voltage measuring circuitry, and MOSFET (metal oxide semiconductor field-effect transistors) for power switching. In another attempt to achieve good surface finish by EDM...
Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0001088
EISBN: 978-1-62708-162-7
... silver of various purities indicates that oxidation of impurities during oxidizing anneals generally causes a substantial increase in surface hardness and restrains grain growth, effects that are absent in spectroscopically pure silver. Very pure silver had a hardness of 25 HV after a hydrogen anneal...
Series: ASM Handbook
Volume: 24
Publisher: ASM International
Published: 15 June 2020
DOI: 10.31399/asm.hb.v24.a0006554
EISBN: 978-1-62708-290-7
... field effect transistors (FETs) is possible; however, there are shortcomings with using this approach for active components ( Ref 1 ). The performance of the materials in printed form is inferior. The transistors are more than 1000 times larger, and the speed of printing is 1000 times slower than using...
Series: ASM Desk Editions
Publisher: ASM International
Published: 01 November 1995
DOI: 10.31399/asm.hb.emde.9781627082006
EISBN: 978-1-62708-200-6