Crystal structure is the arrangement of atoms or molecules in the solid state that involves consideration of defects, or abnormalities, in idealized atomic/molecular arrangements. The three-dimensional aggregation of unit cells in the crystal forms a space lattice or Bravais lattice. This article provides a brief review of the terms and basic concepts associated with crystal structures. It also discusses some of the significant defects obstructing plastic flow in real crystals, namely point defects, line defects, stacking faults, twins, and cold work. Several tables in the article provide information on the crystal structures and lattice parameters of allotropes of metallic elements.

This article defines crystallographic terms and concepts, including crystal structure, unit cell, structure symbols, lattice, space-group notation, and atom position. It schematically illustrates the atom positions, prototypes, structure symbols, space-group notations, and lattice parameters for some of the simple metallic crystals. A table that lists the crystal structures of various metal elements is presented. The crystal structures are described by the Pearson symbols for crystal system, space lattice, total number of atoms per unit cell, and prototype structure. The article tabulates the assorted structure types of metallurgical interest arranged according to Pearson symbol. It also provides information on crystal defects, explaining some significant ones, such as point defects, line defects, stacking faults, and twins.

This article describes crystallographic terms and concepts and illustrates various crystal structures. The crystallographic terms described include crystal structure, unit cell, crystal system, lattice, structure symbols, space-group notation, structure prototype, atom positions, point groups, and equivalent positions. The article presents a table of assorted structure types of metallurgical interest arranged according to the Pearson symbol. It also schematically illustrates atom positions, prototypes, structure symbols, space-group notations, and lattice parameters for some of the simple metallic crystals. The article concludes with a description of some of the most significant crystal defects such as point defects, line defects, and stacking faults.

This article describes eight stages of the atomistic film growth: vaporization of the material, transport of the material to the substrate, condensation and nucleation of the atoms, nuclei growth, interface formation, film growth, changes in structure during the deposition, and postdeposition changes. It also discusses the effects and causes of growth-related properties of films deposited by physical vapor deposition processes, including residual film stress, density, and adhesion.

This article reviews the concepts considered important for an understanding of the processes used for preparing cobalt-chromium alloy implants, the microstructures resulting from this processing, and the resulting material properties. The review includes solidification of alloys, diffusionless (martensitic) phase transformation as occurs with face-centered cubic to hexagonal close-packed transformation in cobalt-chromium alloys, and stacking faults and twins and their role in this transformation. It also discusses the strengthening mechanisms that are responsible for the mechanical properties of cast and wrought cobalt alloys. The article contains tables that list the commonly used cobalt alloys and their biomedical applications and chemical compositions. It discusses the mechanical and corrosion properties of cobalt alloys, and provides a description of the microstructure of cobalt alloys.

X-ray topography is a technique that comprises topography and x-ray diffraction. This article provides a description of the kinematical theory and the dynamical theory of diffraction. It provides useful information on the configurations of reflection and transmission topography. The article explains various topographic methods, namely, divergent beam method, polycrystal rocking curve analysis, line broadening analysis, microbeam method, and polycrystal scattering topography, as well as their instrumentation. It also describes the applications of x-ray topography.

This article describes the methods of X-ray diffraction analysis, the types of information that can be obtained, and its interpretation. The discussion covers the basic theories of X-rays and various types of diffraction experiments, namely single-crystal methods for polychromatic and monochromatic beams, powder diffraction methods, and the Rietveld method.

This article describes the integration of thermodynamic modeling, mobility database, and phase-transformation crystallography into phase-field modeling and its combination with transformation texture modeling to predict phase equilibrium, phase transformation, microstructure evolution, and transformation texture development during heat treatment of multicomponent alpha/beta and beta titanium alloys. It includes quantitative description of Burgers orientation relationship and path, discussion of lattice correspondence between the alpha and beta phases, and determination of the total number of Burgers correspondence variants and orientation variants. The article also includes calculation of the transformation strain with contributions from defect structures developed at alpha/beta interfaces as a precipitates grow in size. In the CALculation of PHAse Diagram (CALPHAD) framework, the Gibbs free energies and atomic mobilities are established as functions of temperature, pressure, and composition and serve directly as key inputs of any microstructure modeling. The article presents examples of the integrated computation tool set in simulating microstructural evolution.

Diffusion is the process by which molecules, atoms, ions, point defects, or other particle types migrate from a region of higher concentration to one of lower concentration. This article focuses on the diffusivity data and modeling of lattice diffusion in solid-state materials, presenting their diffusion equations. It discusses different methods for evaluating the diffusivity of a material, including the measurement of diffusion coefficients, composition profiles, and layer growth widths. The article reviews the various types of direct and indirect diffusion experiments to extract tracer, intrinsic, and chemical diffusivities. It provides information on the applications of single-phase and multiphase diffusion.

This article presents the basic principle, characteristics, advantages, and disadvantages of resonant ultrasound spectroscopy (RUS) methods in additive manufacturing. It focuses on the two types of RUS methods: the swept-sine method and the impulse excitation method. Representative significant results for additively manufactured complex parts obtained with the different RUS systems are also shown. The article also presents the basic principle and examples of nonlinear RUS methods.

X-ray diffraction techniques are useful for characterizing crystalline materials, such as metals, intermetallics, ceramics, minerals, polymers, plastics, and other inorganic or organic compounds. This article discusses the theory of x-rays and how they are generated and detected. It also describes the crystalline nature of certain materials and how the geometry of a unit cell, and hence crystal lattice, affects the direction and intensity of diffracted x-ray beams. The article concludes with several application examples involving measurements on single and polycrystalline materials.

X-ray topography is the general term for a family of x-ray diffraction imaging techniques capable of providing information on the nature and distribution of imperfections. This article provides a detailed account of x-ray topography techniques, providing information on the historical background and development trends in x-ray diffraction topography. The discussion covers the general principles, components of systems, and applications of x-ray topography techniques, namely conventional X-ray topographic techniques and synchrotron x-ray topographic techniques.

Rutherford backscattering spectrometry (RBS) is a major materials characterization technique that can provide information in a short analysis time. It is used for quantitative compositional analysis of thin films, layered structures, or bulk materials and to measure surface impurities of heavy elements on substrates of lighter elements. This article focuses on RBS and its principles, such as collision kinematics, scattering cross section, and energy loss. It describes the channeling effect and the operation of the RBS equipment. The article also provides information on the applications of RBS.

Additive manufacturing (AM) provides exceptional design flexibility, enabling the manufacture of parts with shapes and functions not viable with traditional manufacturing processes. The two paradigms aiming to leverage computational methods to design AM parts imbuing the design-for-additive-manufacturing (DFAM) principles are design optimization (DO) and simulation-driven design (SDD). In line with the adoption of AM processes by industry and extensive research efforts in the research community, this article focuses on powder-bed fusion for metal AM and material extrusion for polymer AM. It includes detailed sections on SDD and DO as well as three case studies on the adoption of SDD, DO, and artificial-intelligence-based DFAM in real-life engineering applications, highlighting the benefits of these methods for the wider adoption of AM in the manufacturing industry.

This article provides a detailed account of the basic concepts of Rutherford backscattering spectrometry (RBS). It begins with a description of the principles of RBS, as well as the effect of channeling in conjunction with backscattering measurements and the effect of energy loss under this condition. This is followed by a section on equipment used in RBS analysis. Channel-energy conversion, energy-depth conversion, and separation of the dechanneling background are then discussed as the main steps of RBS data analysis. The article also discusses the applications of RBS—including composition of bulk samples, thin-film composition and layer thickness, impurity profiles, damage depth profile, and surface peak—as well as the various codes developed to simulate it.