Scanning electron microscopy (SEM) has shown various significant improvements since it first became available in 1965. These improvements include enhanced resolution, dependability, ease of operation, and reduction in size and cost. This article provides a detailed account of the instrumentation and principles of SEM, broadly explaining its capabilities in resolution and depth of field imaging. It describes three additional functions of SEM, including the use of channeling patterns to evaluate the crystallographic orientation of micron-sized regions; use of backscattered detectors to reveal grain boundaries on unetched samples and domain boundaries in ferromagnetic alloys; and the use of voltage contrast, electron beam-induced currents, and cathodoluminescence for the characterization and failure analysis of semiconductor devices. The article compares the features of SEM with that of scanning Auger microscopes, and lists the applications and limitations of SEM.

Potentiometric membrane electrodes are electrochemical devices that can be used to quantify numerous ionic and nonionic species. This class of electrochemical sensors can be divided into ion-selective and gas-sensing membrane electrodes. The first half of this article mainly focuses on the subclasses, the membrane potential, electrode selectivity limitations and the methods of analysis of the ion-selective membrane electrodes. These methods of analysis include the use of calibration curves, addition techniques, subtraction techniques, and titration. The second half outlines gas sensing membrane electrodes, and discusses important elements that must be considered in addition to the potentiometric membrane electrode to ensure proper electrode response. These elements are reference electrodes, temperature controls, recording of the potential with respect to time, electrode storages, and sample pretreatment. The article also explains the applications of the potentiometric membrane electrodes with the aid of an example.