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insulated-gate bipolar transistors

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Series: ASM Handbook
Volume: 4C
Publisher: ASM International
Published: 09 June 2014
DOI: 10.31399/asm.hb.v04c.a0005836
EISBN: 978-1-62708-167-2
... Induction bar end heating application: power supply, load matching components, induction coils, and work pieces to be heated Fig. 3 A 1250 kW, 1 kHz insulated-gate bipolar transistor (IGBT) power supply Fig. 4 Physical comparison of silicon-controlled rectifiers (SCRs) and insulated-gate...
Series: ASM Handbook
Volume: 4C
Publisher: ASM International
Published: 09 June 2014
DOI: 10.31399/asm.hb.v04c.a0005838
EISBN: 978-1-62708-167-2
..., and various switching devices, namely, silicon-controlled rectifiers, insulated-gate bipolar transistors, and metal-oxide semiconductor field-effect transistors. The article also provides information on frequency-multiplication harmonic-induction power supplies, namely, push-pull and half-bridge inverters...
Series: ASM Handbook
Volume: 4C
Publisher: ASM International
Published: 09 June 2014
DOI: 10.31399/asm.hb.v04c.a0005854
EISBN: 978-1-62708-167-2
... is low; system cooling is not adequate. SCR/IGBT fault: Power supply has detected internal electronic circuit problem. (SCR, silicon-controlled rectifier; IGBT, insulated-gate bipolar transistor) Over voltage (fault): Power supply has detected internal overvoltage problem. Under voltage...
Series: ASM Handbook
Volume: 4C
Publisher: ASM International
Published: 09 June 2014
DOI: 10.31399/asm.hb.v04c.a0005902
EISBN: 978-1-62708-167-2
...-gate bipolar transistor (IGBT) converter technology will offer solutions able to be implemented in the foreseeable future ( Ref 9 ). Line-Frequency Power Supply Converter Power Supply The inductor and furnace flange are cooled as with the crucible furnace in a closed cooling circuit, using...
Series: ASM Handbook
Volume: 4C
Publisher: ASM International
Published: 09 June 2014
DOI: 10.31399/asm.hb.v04c.a0005851
EISBN: 978-1-62708-167-2
... cannot be seen. The system operates until partial plugging of a water path occurs, and expensive devise failure follows. These insulated-gate bipolar transistor (IGBT), SCR, diode, and transformer failures can cost thousands of dollars, but to the untrained eye cannot be directly linked back to the high...
Series: ASM Handbook
Volume: 4C
Publisher: ASM International
Published: 09 June 2014
DOI: 10.31399/asm.hb.v04c.a0005869
EISBN: 978-1-62708-167-2
.... Fig. 5 Transient of an oscillating circuit based on insulated-gate bipolar transistor technology Most parts being induction heat treated in the aeronautic and aerospace industry are transmission parts: bearings, shafts, and different kinds of gears, such as bevel gears, spur wheel gears...
Series: ASM Handbook
Volume: 4C
Publisher: ASM International
Published: 09 June 2014
DOI: 10.31399/asm.hb.v04c.a0005850
EISBN: 978-1-62708-167-2
.... Monthly, look for overheating of copper bus connections (signified by discoloration), SCRs, insulated-gate bipolar transistors (IGBTs), diodes, and other components, and tighten with the required wrenches. This includes inspection of any transformer and capacitor connections. If the system has any...
Series: ASM Handbook
Volume: 6
Publisher: ASM International
Published: 01 January 1993
DOI: 10.31399/asm.hb.v06.a0001337
EISBN: 978-1-62708-173-3
... modulation (FM). A variety of semiconductors are used as switching elements, including transistors (for example, field-effect transistors [FETs] and insulated-gate bipolar transistors [IGBTs]). The transformer, which is often designed of ferrite core material, operates at high frequencies without...
Series: ASM Handbook
Volume: 4C
Publisher: ASM International
Published: 09 June 2014
DOI: 10.31399/asm.hb.v04c.a0005899
EISBN: 978-1-62708-167-2
..., which has four rectifier bridges. Converters increasingly have been fitted with insulated-gate bipolar transistors (IGBTs) since the end of the 1990s, instead of using thyristors as the power semiconductors. These systems unite the main benefits of series and parallel thyristor converters...
Series: ASM Handbook
Volume: 4C
Publisher: ASM International
Published: 09 June 2014
DOI: 10.31399/asm.hb.v04c.a0005895
EISBN: 978-1-62708-167-2
.... This is because the deployment of resonant converters with power outputs from 300 kW is expensive for low-power ratings. It nevertheless can be expected that insulated-gate bipolar transistor (IGBT) converter technology will offer solutions able to be implemented in the foreseeable future. In the case of line...
Series: ASM Handbook
Volume: 4B
Publisher: ASM International
Published: 30 September 2014
DOI: 10.31399/asm.hb.v04b.a0005924
EISBN: 978-1-62708-166-5
... for signature concept. kVA, kilovolt-amps. Source: Ref 9 Fig. 3 Modern inverter power types for heat treating. SCR, silicon-controlled rectifier; IGBT, isolated gate bipolar transistor; MOS-FET, metal-silicon-dioxide field-effect transistor. Source: Ref 9 Fig. 51 Induction tempering...
Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0001091
EISBN: 978-1-62708-162-7
.... Frensley W.R. , Gallium Arsenide Transistors , Sci. Am. , Vol 257 ( No. 2 ), Aug 1987 , p 80 – 87 10.1038/scientificamerican0887-80 9. Brody H. , Ultrafast Chips at the Gate , High Technol. , Vol 6 ( No. 3 ), March 1986 , p 28 – 35 10. Judd J.C. , Wardell...
Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.9781627081627
EISBN: 978-1-62708-162-7