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insulated-gate bipolar transistors

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Published: 09 June 2014
Fig. 3 A 1250 kW, 1 kHz insulated-gate bipolar transistor (IGBT) power supply More
Image
Published: 09 June 2014
Fig. 10 Diagram comparing structures of the insulated-gate bipolar transistor (IGBT) and the metal-oxide semiconductor field-effect transistor (MOSFET) More
Series: ASM Handbook
Volume: 4C
Publisher: ASM International
Published: 09 June 2014
DOI: 10.31399/asm.hb.v04c.a0005836
EISBN: 978-1-62708-167-2
... Abstract This article reviews the performance of power electronics components, namely, power rectifiers, insulated-gate bipolar transistors, metal-oxide semiconductor field-effect transistors, diodes, and silicon-controlled rectifiers. It provides information on induction heating power supplies...
Series: ASM Handbook
Volume: 4C
Publisher: ASM International
Published: 09 June 2014
DOI: 10.31399/asm.hb.v04c.a0005838
EISBN: 978-1-62708-167-2
... switching devices, namely, silicon-controlled rectifiers, insulated-gate bipolar transistors, and metal-oxide semiconductor field-effect transistors. The article also provides information on frequency-multiplication harmonic-induction power supplies, namely, push-pull and half-bridge inverters and full...
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Published: 09 June 2014
Fig. 6 Metal-oxide semiconductor field-effect transistors (MOSFETs) and insulated-gate bipolar transistors (IGBTs). Courtesy of Radyne Corporation More
Image
Published: 09 June 2014
Fig. 5 Common power semiconductor types, with power ranges and switching frequencies. IGBT, insulated-gate bipolar transistor; MOSFET, metal-oxide semiconductor field-effect transistor More
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Published: 09 June 2014
Fig. 5 Transient of an oscillating circuit based on insulated-gate bipolar transistor technology More
Image
Published: 09 June 2014
Fig. 4 Physical comparison of silicon-controlled rectifiers (SCRs) and insulated-gate bipolar transistors (IGBTs) More
Series: ASM Handbook
Volume: 4C
Publisher: ASM International
Published: 09 June 2014
DOI: 10.31399/asm.hb.v04c.a0005902
EISBN: 978-1-62708-167-2
... with power outputs from some 300 kW is very expensive due to the current factor of the iron inductor. It can nevertheless be expected that insulated-gate bipolar transistor (IGBT) converter technology will offer solutions able to be implemented in the foreseeable future ( Ref 9 ). Line-Frequency Power...
Series: ASM Handbook
Volume: 4C
Publisher: ASM International
Published: 09 June 2014
DOI: 10.31399/asm.hb.v04c.a0005854
EISBN: 978-1-62708-167-2
... fault: Power supply has detected internal electronic circuit problem. (SCR, silicon-controlled rectifier; IGBT, insulated-gate bipolar transistor) Over voltage (fault): Power supply has detected internal overvoltage problem. Under voltage (fault): Power supply has detected internal...
Series: ASM Handbook
Volume: 4C
Publisher: ASM International
Published: 09 June 2014
DOI: 10.31399/asm.hb.v04c.a0005851
EISBN: 978-1-62708-167-2
... be seen. The system operates until partial plugging of a water path occurs, and expensive devise failure follows. These insulated-gate bipolar transistor (IGBT), SCR, diode, and transformer failures can cost thousands of dollars, but to the untrained eye cannot be directly linked back to the high...
Series: ASM Handbook
Volume: 4C
Publisher: ASM International
Published: 09 June 2014
DOI: 10.31399/asm.hb.v04c.a0005869
EISBN: 978-1-62708-167-2
... than 80 ms and must dose the same quantity of energy in every cycle. Figure 5 shows the transient of a generator used for induction hardening in the aeronautic and aerospace industry. Fig. 5 Transient of an oscillating circuit based on insulated-gate bipolar transistor technology Parts...
Series: ASM Handbook
Volume: 4C
Publisher: ASM International
Published: 09 June 2014
DOI: 10.31399/asm.hb.v04c.a0005850
EISBN: 978-1-62708-167-2
... supplies, do not add torque to the SCR clamps. Monthly, look for overheating of copper bus connections (signified by discoloration), SCRs, insulated-gate bipolar transistors (IGBTs), diodes, and other components, and tighten with the required wrenches. This includes inspection of any transformer...
Series: ASM Handbook
Volume: 6
Publisher: ASM International
Published: 01 January 1993
DOI: 10.31399/asm.hb.v06.a0001337
EISBN: 978-1-62708-173-3
... as switching elements, including transistors (for example, field-effect transistors [FETs] and insulated-gate bipolar transistors [IGBTs]). The transformer, which is often designed of ferrite core material, operates at high frequencies without introducing high losses. The turns ratio determines welding...
Series: ASM Handbook
Volume: 4C
Publisher: ASM International
Published: 09 June 2014
DOI: 10.31399/asm.hb.v04c.a0005899
EISBN: 978-1-62708-167-2
... greater losses than with the parallel type, the current conductors need to have very large cross sections. Converters with IGBT Modules Converters increasingly have been fitted with insulated-gate bipolar transistors (IGBTs) since the end of the 1990s, instead of using thyristors as the power...
Series: ASM Handbook
Volume: 4C
Publisher: ASM International
Published: 09 June 2014
DOI: 10.31399/asm.hb.v04c.a0005895
EISBN: 978-1-62708-167-2
... is expensive for low-power ratings. It nevertheless can be expected that insulated-gate bipolar transistor (IGBT) converter technology will offer solutions able to be implemented in the foreseeable future. In the case of line frequency power supply, channel furnaces are connected to the mains network via...
Series: ASM Handbook
Volume: 4B
Publisher: ASM International
Published: 30 September 2014
DOI: 10.31399/asm.hb.v04b.a0005924
EISBN: 978-1-62708-166-5
.... Inversion is then accomplished through the use of thyristors (silicon-controlled rectifiers, or SCRs), or transistors such as isolated gate bipolar transistors (IGBTs) or metal-silicon-dioxide field-effect transistors (MOSFETs), to produce dc pulses that are then made sinusoidal to form high-frequency ac...
Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0001091
EISBN: 978-1-62708-162-7
... at the elevated temperature. After doping, optoelectronic device of IC manufacture can be completed through deposition of layers of metals and insulators by various techniques. A similar technique, called ion cluster beam, is not used as frequently as ion implantation. In this technique, ions are grouped...
Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.9781627081627
EISBN: 978-1-62708-162-7