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group III-V semiconductors

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Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001284
EISBN: 978-1-62708-170-2
... of Group III-V, II-VI, and IV semiconductors. chemical vapor deposition epitaxial deposition group III-V semiconductors group II-VI semiconductors group IV semiconductors kinetics metal-organic chemical vapor deposition metal-organic chemical vapor deposition reactor systems semiconductor...
Series: ASM Handbook
Volume: 20
Publisher: ASM International
Published: 01 January 1997
DOI: 10.31399/asm.hb.v20.a0002475
EISBN: 978-1-62708-194-8
... to 10 4 Ω · m range. The semiconductors are either group IV elements, silicon (Si) and germanium (Ge), or composite—formed by two or more group IIIV or group II–VI materials, such as GaAs ( Ref 3 ). The magnetic materials can be metals, alloys, and ceramics. They all have the ability to carry high...
Book Chapter

By Jerome Kruger
Series: ASM Handbook
Volume: 13A
Publisher: ASM International
Published: 01 January 2003
DOI: 10.31399/asm.hb.v13a.a0003585
EISBN: 978-1-62708-182-5
... , 1988 , p 43 – 56 10.1016/0010-938X(88)90005-4 55. Marcus P. and Maurice V. , Passivity of Metals and Semiconductors , Ives M.B. , Luo J.L. , and Rodda J.R. , Ed., Proc. Vol 99-42 , Electrochemical Society , 2001 , p 30 – 54 56. Vignal V. , Olive...
Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0001092
EISBN: 978-1-62708-162-7
.... This use of indium peaked around 1969 and 1970, but it has declined since then because germanium has been replaced by silicon in most semiconductor applications. Germanium semiconductors are now produced only for replacement purposes. Intermetallic semiconductors formed with indium and group V elements...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001285
EISBN: 978-1-62708-170-2
... concentric regions. The group III source gases enter through the center tube, the group V source gases enter between the inner and center tubes, and the reaction byproducts are exhausted between the inner and outer tubes. The substrate rests horizontally on a SiC-coated graphite disk, which is heated from...
Series: ASM Handbook
Volume: 18
Publisher: ASM International
Published: 31 December 2017
DOI: 10.31399/asm.hb.v18.a0006402
EISBN: 978-1-62708-192-4
...-oriented laboratory tests (category VI) are attractive because they offer high value in terms of testing time and costs per test. It can be beneficial to pretest new materials, coatings, and lubricants in categories V and VI rather than spending money and efforts in full-scale testing, especially when...
Series: ASM Handbook
Volume: 20
Publisher: ASM International
Published: 01 January 1997
DOI: 10.31399/asm.hb.v20.a0002467
EISBN: 978-1-62708-194-8
... selected, but will vary as a function of structure, processing, or the effect of external variables such as temperature, section size, or surface finish. The particular property and materials classes important for application vary among industrial groups as indicated in Table 1 , but the materials...
Series: ASM Handbook
Volume: 22A
Publisher: ASM International
Published: 01 December 2009
DOI: 10.31399/asm.hb.v22a.a0005413
EISBN: 978-1-62708-196-2
... into a steep, almost linear branch, called stage II. The slope in this stage is athermal: It depends on crystal orientation but not on temperature, except for the temperature dependence of the shear modulus. Stage III follows as the slope of the stress-strain curve decreases gradually, tending toward...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001249
EISBN: 978-1-62708-170-2
... pitched “cry” when bent. It wets glass and finds application in low-melting alloys and solders. It is used in making alkaline batteries, automotive trim, bearing alloys, electronic assemblies, germanium transistors, photoconductors, rectifiers, thermistors, vacuum seals, and group III-V compound...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.9781627082136
EISBN: 978-1-62708-213-6
Book Chapter

By S.L. Rohde
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001288
EISBN: 978-1-62708-170-2
... Ne Ar Kr Xe Be 0.24 0.42 0.51 0.48 0.53 C 0.07 … 0.12 0.13 0.17 Al 0.16 0.73 1.05 0.96 0.82 Si 0.13 0.48 0.50 0.50 0.42 Ti 0.07 0.43 0.51 0.48 0.43 V 0.06 0.48 0.65 0.62 0.63 Cr 0.17 0.99 1.18 1.39 1.55 Mn … … … 1.39 1.43 Fe...
Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0001117
EISBN: 978-1-62708-162-7
...%), the antimony acts as a powerful pearlite former. In the form of Sb 2 O 3 , antimony is used in enamels, glass, pigments, catalysts, and flame retardants. Antimony is used as a component of III-V semiconductors such as InSb, AlSb, and GaSb, and as an alloying ingredient in thermoelectric alloys. Chemical...
Series: ASM Handbook Archive
Volume: 10
Publisher: ASM International
Published: 01 January 1986
DOI: 10.31399/asm.hb.v10.a0001743
EISBN: 978-1-62708-178-8
.... Mitchell J. and Smith D.M. , Aquametry , 2nd ed. , Part III, John Wiley & Sons , 1980 16. McGlothin C.D. and Purdy W.C. , Anal. Chim. Acta , Vol 88 , 1977 , p 33 10.1016/S0003-2670(01)96046-5 17. Patriarche G.J. , Mikrochim. Acta , 1970 , p 950...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006641
EISBN: 978-1-62708-213-6
... recovery results from a bis(diethylamido)silane precursor Element Bis(diethylamido)silane, ppb Spike recovery, % Li <1 91 Be <1 97 B <1 87 Na 16 84 Mg 5 83 Al 4 95 K 2 89 Ca 4 84 Ti 2 84 V 1 90 Cr 2 99 Mn <1 96 Fe 4 96...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001290
EISBN: 978-1-62708-170-2
... at the surface during the film formation of IBAD are shown in Fig. 2 . The lower right portion of Fig. 2 shows a very dilute neutral plasma consisting of background gas (“g”) at a thermal energy of 0.03 eV, which is present throughout the chamber, as well as vapor atoms (“v”) with an energy of either 0.15 eV...
Series: ASM Desk Editions
Publisher: ASM International
Published: 01 November 1995
DOI: 10.31399/asm.hb.emde.a0003059
EISBN: 978-1-62708-200-6
... 3 , V 2 O 3 , Ti 2 O 3 , Rh 2 O 3 , and Ga 2 O 3 . <italic>ABX</italic><sub>3</sub>Structures Perovskite Structures (<italic>Pcmn</italic>) To a first approximation, the perovskite structure consists of a cubic close-packed anion lattice in which one-fourth of the ions are replaced...
Series: ASM Desk Editions
Publisher: ASM International
Published: 01 November 1995
DOI: 10.31399/asm.hb.emde.a0003062
EISBN: 978-1-62708-200-6
... is that practical fuel cells produce lower voltages than theory predicts for ideal systems. H 2 /O 2 cells, for example, produce 0.5 to 0.9 V dc at currents of 100 to 400 mA/cm 2 of cell area versus the 1.23 V ideal at ambient conditions. Performance can be enhanced by operation at higher temperatures or reactant...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006670
EISBN: 978-1-62708-213-6
... chloride gas or a metal organic liquid precursor vapor and group V hydride gases in the case of vapor phase epitaxy and metal organic chemical vapor deposition. A discussion of semiconductor processing would be incomplete without reference to how these materials are used to form electronic devices...
Series: ASM Handbook
Volume: 6
Publisher: ASM International
Published: 01 January 1993
DOI: 10.31399/asm.hb.v06.a0001348
EISBN: 978-1-62708-173-3
... Science Publications , 1986 8. Vitek V. , Micromechanisms of Intergranular Brittle Fracture in Intermetallic Compound , J. Phys. III , Vol 1 , 1991 , p 1085 – 1097 10.1051/jp3:1991173 9. Chen S.P. , Studies of Iridium Surfaces and Grain Boundaries , Phil. Mag. A , Vol...
Series: ASM Desk Editions
Publisher: ASM International
Published: 01 November 1995
DOI: 10.31399/asm.hb.emde.9781627082006
EISBN: 978-1-62708-200-6