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group III-V semiconductors

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Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001284
EISBN: 978-1-62708-170-2
..., and IV semiconductors. chemical vapor deposition epitaxial deposition group III-V semiconductors group II-VI semiconductors group IV semiconductors kinetics metal-organic chemical vapor deposition metal-organic chemical vapor deposition reactor systems semiconductor films thermodynamics...
Series: ASM Handbook
Volume: 20
Publisher: ASM International
Published: 01 January 1997
DOI: 10.31399/asm.hb.v20.a0002475
EISBN: 978-1-62708-194-8
... are either group IV elements, silicon (Si) and germanium (Ge), or composite—formed by two or more group IIIV or group II–VI materials, such as GaAs ( Ref 3 ). The magnetic materials can be metals, alloys, and ceramics. They all have the ability to carry high magnetic flux in response to applied...
Book Chapter

By Jerome Kruger
Series: ASM Handbook
Volume: 13A
Publisher: ASM International
Published: 01 January 2003
DOI: 10.31399/asm.hb.v13a.a0003585
EISBN: 978-1-62708-182-5
... , 1988 , p 43 – 56 10.1016/0010-938X(88)90005-4 55. Marcus P. and Maurice V. , Passivity of Metals and Semiconductors , Ives M.B. , Luo J.L. , and Rodda J.R. , Ed., Proc. Vol 99-42 , Electrochemical Society , 2001 , p 30 – 54 56. Vignal V. , Olive...
Series: ASM Handbook
Volume: 22A
Publisher: ASM International
Published: 01 December 2009
DOI: 10.31399/asm.hb.v22a.a0005413
EISBN: 978-1-62708-196-2
... into a steep, almost linear branch, called stage II. The slope in this stage is athermal: It depends on crystal orientation but not on temperature, except for the temperature dependence of the shear modulus. Stage III follows as the slope of the stress-strain curve decreases gradually, tending toward...
Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0001092
EISBN: 978-1-62708-162-7
... only for replacement purposes. Intermetallic semiconductors formed with indium and group V elements such as antimony, arsenic, and phosphorus have received considerable attention in recent years. Indium antimonide has been used for infrared detectors but has been limited to military applications...
Series: ASM Handbook
Volume: 18
Publisher: ASM International
Published: 31 December 2017
DOI: 10.31399/asm.hb.v18.a0006402
EISBN: 978-1-62708-192-4
...) are attractive because they offer high value in terms of testing time and costs per test. It can be beneficial to pretest new materials, coatings, and lubricants in categories V and VI rather than spending money and efforts in full-scale testing, especially when components cannot be produced at an early stage...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006641
EISBN: 978-1-62708-213-6
... the center of the doughnut, where the sample is excited and ionized. The argon ICP has a relatively high electron density (on the order of 10 15 cm −3 ) and a very high electron temperature (11,000 K, or 10,700 °C). Additionally, argon has a first-ionization potential of 15.8 V, which is higher than...
Series: ASM Handbook
Volume: 22A
Publisher: ASM International
Published: 01 December 2009
DOI: 10.31399/asm.hb.v22a.a0005429
EISBN: 978-1-62708-196-2
... lon ( { R I } ) produces two equations: ( T e + V e − e + V e − I ) Ψ e ( { R I , r i } ) = E e Ψ e ( { R I , r i } )   and   ( T I + V I − I + E e ) Ψ lon ( { R I } ) = E...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001285
EISBN: 978-1-62708-170-2
... concentric regions. The group III source gases enter through the center tube, the group V source gases enter between the inner and center tubes, and the reaction byproducts are exhausted between the inner and outer tubes. The substrate rests horizontally on a SiC-coated graphite disk, which is heated from...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001249
EISBN: 978-1-62708-170-2
... “cry” when bent. It wets glass and finds application in low-melting alloys and solders. It is used in making alkaline batteries, automotive trim, bearing alloys, electronic assemblies, germanium transistors, photoconductors, rectifiers, thermistors, vacuum seals, and group III-V compound semiconductors...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006670
EISBN: 978-1-62708-213-6
... a supersaturated solution during liquid phase epitaxy, and high-temperature chemical reaction between a metal chloride gas or a metal organic liquid precursor vapor and group V hydride gases in the case of vapor phase epitaxy and metal organic chemical vapor deposition. A discussion of semiconductor processing...
Series: ASM Desk Editions
Publisher: ASM International
Published: 01 November 1995
DOI: 10.31399/asm.hb.emde.a0003062
EISBN: 978-1-62708-200-6
... is that practical fuel cells produce lower voltages than theory predicts for ideal systems. H 2 /O 2 cells, for example, produce 0.5 to 0.9 V dc at currents of 100 to 400 mA/cm 2 of cell area versus the 1.23 V ideal at ambient conditions. Performance can be enhanced by operation at higher temperatures or reactant...
Series: ASM Handbook Archive
Volume: 10
Publisher: ASM International
Published: 01 January 1986
DOI: 10.31399/asm.hb.v10.a0001743
EISBN: 978-1-62708-178-8
... + + OH − → H 2 O + Cl − + Na + ), the overall effect is the progressive replacement of highly conducting H + by the less conducting Na + ion. At the equivalence point, the solution consists of NaCl. Because continued titration again increases conductance, the resulting titration curve is V-shaped...
Series: ASM Handbook Archive
Volume: 10
Publisher: ASM International
Published: 01 January 1986
DOI: 10.31399/asm.hb.v10.a0001750
EISBN: 978-1-62708-178-8
... in an unsaturated undermodulated line is: (Eq 11) N min = K V s T s D Λ ′ ( Δ H pp ) 2 Q η g 2 S ( S + 1 ) ω 0 2 H mod     ( T d Δ f P ) 1 / 2 [ F k − 1 + ( t + F amp − 1 ) L...
Series: ASM Handbook
Volume: 24A
Publisher: ASM International
Published: 30 June 2023
DOI: 10.31399/asm.hb.v24A.a0006949
EISBN: 978-1-62708-439-0
... with principles I and II that focus on groups of parts (i.e., more than three parts), principle III investigates pairwise relations of components. The concept of strength is introduced to characterize the level of functional and physical dependency between a pair of components. Therefore, the third principle...
Book Chapter

Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0001087
EISBN: 978-1-62708-162-7
... and provides good resistance to arc erosion (good arc quenching). The susceptibility of fine silver contacts to sulfidation precludes their use in low-current, low-voltage, and low-contact-force applications. In general, they should not be used below 10 V (except at high currents) or in situations where...
Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0001117
EISBN: 978-1-62708-162-7
...%), the antimony acts as a powerful pearlite former. In the form of Sb 2 O 3 , antimony is used in enamels, glass, pigments, catalysts, and flame retardants. Antimony is used as a component of III-V semiconductors such as InSb, AlSb, and GaSb, and as an alloying ingredient in thermoelectric alloys. Chemical...
Series: ASM Handbook
Volume: 13A
Publisher: ASM International
Published: 01 January 2003
DOI: 10.31399/asm.hb.v13a.a0003677
EISBN: 978-1-62708-182-5
... alloys by group in various chloride brines. Group A: commercially pure titanium (grade 2) and beta titanium alloys. Group B: Beta-C (Ti-3%Al-8%V-6%Cr-4%Zr-4%Mo), Transage-207 (Ti-8%Mo-2.5%Al-9%Zr-2%Sn), and Ti-8-8-2-3 (Ti-8%Mo-8%V-2%Fe-3%Al). Group C: Beta-C/Pd (Ti-3%Al-8%V-6%Cr-4%Zr-4%Mo-0.05%Pd), Beta...
Book Chapter

By S.L. Rohde
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001288
EISBN: 978-1-62708-170-2
... 0.48 0.53 C 0.07 … 0.12 0.13 0.17 Al 0.16 0.73 1.05 0.96 0.82 Si 0.13 0.48 0.50 0.50 0.42 Ti 0.07 0.43 0.51 0.48 0.43 V 0.06 0.48 0.65 0.62 0.63 Cr 0.17 0.99 1.18 1.39 1.55 Mn … … … 1.39 1.43 Fe 0.15 0.88 1.10 1.07 1.00 Co 0.13 0.90...
Series: ASM Handbook
Volume: 20
Publisher: ASM International
Published: 01 January 1997
DOI: 10.31399/asm.hb.v20.a0002467
EISBN: 978-1-62708-194-8
... selected, but will vary as a function of structure, processing, or the effect of external variables such as temperature, section size, or surface finish. The particular property and materials classes important for application vary among industrial groups as indicated in Table 1 , but the materials...