This article describes the vapor-phase growth techniques applied to the epitaxial deposition of semiconductor films and discusses the fundamental processes involved in metal-organic chemical vapor deposition (MOCVD). It reviews the thermodynamics that determine the driving force behind the overall growth process and the kinetics that define the rates at which the various processes occur. The article provides information on the reactor systems and hardware, MOCVD starting materials, engineering considerations that optimize growth, and the growth parameters for a variety of Group III-V, II-VI, and IV semiconductors.

This article presents an overview of the electric and magnetic parameters and discusses the significance of these parameters for electronic applications. It describes the components of analog and digital electronic circuits. The article reviews the augmenting technologies: magnetic and special technologies such as electrooptical.

This article reviews the types of passivity and presents tactics that employ passivity to control corrosion. Thermodynamics provides a guide to the conditions under which passivation becomes possible. A valuable guide to thermodynamics is the potential-pH diagram and the Pourbaix diagram. The article presents a potential-pH diagram for the iron-water system and an illustration of an idealized anodic polarization curve for a metal surface, which serves as a basis for describing the kinetics of passivation. It discusses five properties of passive films: thickness, composition, structure, electronic properties, and mechanical properties. The article outlines three possible processes that can form passive films: direct film formation, dissolution precipitation, and anodic oxidation of metal ions in solution. It describes the breakdown of the passive film using various models and highlighting the effect of alloy composition and structure.

This article focuses on the use of indium and bismuth in low-melting-temperature solders and fusible alloys. It describes how the two elements typically occur in nature and how they are recovered and processed for commercial use. It also provides information on designations, classification, composition, properties (including temperatures ranges), and some of the other ways in which indium and bismuth alloys are used.

This article discusses the application of amorphous and crystalline films through plasma-enhanced chemical vapor deposition (PECVD) from the view point of microelectronic device fabrication. It describes the various types of PECVD reactors and deposition techniques. Plasma enhancement of the CVD process is discussed briefly. The article also describes the properties of amorphous and crystalline films deposited by the PECVD process for integrated circuit fabrication.

The influence of friction and wear on the function and structure of tribological systems is determined by various types of tribological tests. This article introduces the general categories of tribological testing and describes the basic objectives of testing. It reviews the results of tribological tests, where the system-dependent characteristics of friction and wear data can be expressed in different forms, such as tribographs, transition diagrams, and tribomaps. A summary of various methods of surface analysis is presented in a table. The article discusses the relationship between wear and reliability in terms of exponential distribution, Weibull distribution, and gamma distribution. It concludes with information on the effects of interaction on failure probability.

This article examines material property data and the information needs at various points in the design, manufacture, and use cycle. It contains a table that lists the various sources of materials data. The article describes locating media for sources of data such as suppliers of databases and internet. It discusses the types of sources of data, including computer readable media, data centers, and print media. The article also reviews the methods for evaluation and interpretation of data and examines the processes of obtaining and reporting test data.

This article focuses on the analyzing and modeling of stress-strain behavior of polycrystals of pure face-centered cubic (fcc) metals in the range of temperatures and strain rates where diffusion is not important. It presents a phenomenological description of stress-strain behavior and provides information on the physical background, alternative interpretations, and directions of research. The quantitative description of strain hardening of fcc polycrystals is provided. The article also discusses the modeling of stress-strain behavior in body-centered cubic metals, hexagonal metals, stage IV work hardening, and the various classes of single-phase alloys.

This article focuses on the electrodeposition of indium and its alloys, such as indium-antimony, indium-gallium, and indium-bismuth, in nonaqueous indium plating baths. It also provides information on the stripping of indium plate from plated components and presents an overview of the specifications, standards, and hazards of indium plating.

Sputtering is a nonthermal vaporization process in which the surface atoms are physically ejected from a surface by momentum transfer from an energetic bombarding species of atomic/molecular size. It uses a glow discharge or an ion beam to generate a flux of ions incident on the target surface. This article provides an overview of the advantages and limitations of sputter deposition. It focuses on the most common sputtering techniques, namely, diode sputtering, radio-frequency sputtering, triode sputtering, magnetron sputtering, and unbalanced magnetron sputtering. The article discusses the fundamentals of plasma formation and the interactions on the target surface. A comparison of reactive and nonreactive sputtering is also provided. The article concludes with a discussion on the several methods of process control and the applications of sputtered films.

This article presents the following characteristics of pure metals : structure, chemical composition, mass characteristics, thermal properties, electrical properties, chemical properties, magnetic properties, optical properties, fabrication characteristics, nuclear properties, and mechanical properties.

Electrogravimetry is a method used to separate and quantify ions of a substance, usually a metal. Quantification of these ions primarily depends on the rate of movement of charged species (ions) in an electric field. This article details the various types of electrometric titrations, namely, conductometric titration, oscillometric (high frequency) titration, potentiometric titration, amperometric titration, biamperometric titration, bipotentiometric titration, and coulometric titration. It also provides a brief outline of the applications of electrometric titrations.

This article discusses the basic principles of inductively coupled plasma mass spectrometry (ICP-MS), covering different instruments used for performing ICP-MS analysis. The instruments covered include the sample-introduction system, ICP ion source, mass analyzer, and ion detector. Emphasis is placed on ICP-MS applications in the semiconductor, photovoltaic, materials science, and other electronics and high-technology areas.

Ion-beam-assisted deposition (IBAD) refers to the process wherein evaporated atoms produced by physical vapor deposition are simultaneously struck by an independently generated flux of ions. This article discusses the energy utilization of this process. It describes the physical and chemical processes occurring at the film-vacuum interface during IBAD and dual-ion-beam sputtering with illustrations. The article also reviews the methods used for large-area, high-volume implementation of IBAD and the modes of film formation for IBAD. It contains a table that presents information on deposition and synthesis of inorganic compounds by IBAD and concludes with a discussion on the improved coating properties, advantages, limitations, and applications of IBAD.

This article provides crystallographic and engineering data for single oxide ceramics, zirconia, silicates, mullite, spinels, perovskites, borides, carbides, silicon carbide, boron carbide, tungsten carbide, silicon-nitride ceramics, diamond, and graphite. It includes data on crystal structure, density, mechanical properties, physical properties, electrical properties, thermal properties, and magnetic properties.

Ceramic materials serve important insulative, capacitive, conductive, resistive, sensor, electrooptic, and magnetic functions in a wide variety of electrical and electronic circuitry. This article focuses on various applications of advanced ceramics in both electric power and electronics industry, namely, dielectric, piezoelectric, ferroelectric, sensing, magnetic and superconducting devices.

This article introduces various techniques commonly used in the characterization of semiconductors, namely single-crystal, polycrystalline, amorphous, oxide, organic, and low-dimensional semiconductors and semiconductor devices. The discussion covers material classification, fabrication methods, sample preparation, bulk/elemental characterization methods, microstructural characterization methods, surface characterization methods, and electronic characterization methods.

This article reviews quantifying adhesion, bonding, and interfacial characterization and strength in a solid-state welding process. It discusses metal-metal configurations and provides information on experimental work carried out in measuring the mechanical properties of interfaces based on theoretical analysis. A discussion on the properties affecting adhesion is also provided.