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group III-V semiconductors

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Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001284
EISBN: 978-1-62708-170-2
...-V, II-VI, and IV semiconductors. chemical vapor deposition epitaxial deposition group III-V semiconductors group II-VI semiconductors group IV semiconductors kinetics metal-organic chemical vapor deposition metal-organic chemical vapor deposition reactor systems semiconductor films...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006670
EISBN: 978-1-62708-213-6
... and group V hydride gases in the case of vapor phase epitaxy and metal organic chemical vapor deposition. A discussion of semiconductor processing would be incomplete without reference to how these materials are used to form electronic devices. The first requirement for many electronic devices is...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006641
EISBN: 978-1-62708-213-6
.... The argon ICP has a relatively high electron density (on the order of 10 15 cm −3 ) and a very high electron temperature (11,000 K, or 10,700 °C). Additionally, argon has a first-ionization potential of 15.8 V, which is higher than that of all other elements in the periodic table except helium...
Series: ASM Handbook
Volume: 22A
Publisher: ASM International
Published: 01 December 2009
DOI: 10.31399/asm.hb.v22a.a0005413
EISBN: 978-1-62708-196-2
... can be deduced from the temperature and rate dependence of σ v , which is the focus of the next section. In the 1960s and 1970s, in many investigations on single crystals, detailed evaluations of the effect of temperature and strain rate on work hardening were carried out using the so-called τ III...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001249
EISBN: 978-1-62708-170-2
... “cry” when bent. It wets glass and finds application in low-melting alloys and solders. It is used in making alkaline batteries, automotive trim, bearing alloys, electronic assemblies, germanium transistors, photoconductors, rectifiers, thermistors, vacuum seals, and group III-V compound semiconductors...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001285
EISBN: 978-1-62708-170-2
... Fig. 3 . This reactor was designed and built at the Massachusetts Institute of Technology ( Ref 23 ) for metallo-organic CVD (i.e., CVD where some of the source gases are metallo-organic compounds) of gallium arsenide. The reactor consists of three vertically aligned concentric regions. The group III...
Series: ASM Desk Editions
Publisher: ASM International
Published: 01 November 1995
DOI: 10.31399/asm.hb.emde.a0003059
EISBN: 978-1-62708-200-6
... 2 O 3 , Fe 2 O 3 , Cr 2 O 3 , V 2 O 3 , Ti 2 O 3 , Rh 2 O 3 , and Ga 2 O 3 . To a first approximation, the perovskite structure consists of a cubic close-packed anion lattice in which one-fourth of the ions are replaced by a large cation and a smaller highly charged cation occupies one...
Book Chapter

Series: ASM Desk Editions
Publisher: ASM International
Published: 01 November 1995
DOI: 10.31399/asm.hb.emde.a0003010
EISBN: 978-1-62708-200-6
... Dacron-filled DAP Short glass filled Long glass filled ASTM test method DAP DAIP DAP DAIP Dielectric strength, MV/m (V/mil)  Short time 0.0157 (400) 0.0156–>0.0157 (395–>400) 0.0150–0.0157 (380–400) 0.0156 (395) 0.0150 (380) D 149  Step-by-step 0.0161 (410) 0.0156...
Book Chapter

By S.L. Rohde
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001288
EISBN: 978-1-62708-170-2
... Table 1 Elemental sputtering yields for 500 eV ions Element Ion He Ne Ar Kr Xe Be 0.24 0.42 0.51 0.48 0.53 C 0.07 … 0.12 0.13 0.17 Al 0.16 0.73 1.05 0.96 0.82 Si 0.13 0.48 0.50 0.50 0.42 Ti 0.07 0.43 0.51 0.48 0.43 V 0.06 0.48 0.65...
Series: ASM Handbook
Volume: 13B
Publisher: ASM International
Published: 01 January 2005
DOI: 10.31399/asm.hb.v13b.a0003822
EISBN: 978-1-62708-183-2
... environment. When the anodic breakdown (pitting) potential of the metal is equal to or less than the corrosion potential under a given set of conditions, spontaneous pitting can be expected. Because of its protective oxide film, titanium exhibits anodic pitting potentials, E b , that are very high (≫1 V...
Series: ASM Handbook
Volume: 5B
Publisher: ASM International
Published: 30 September 2015
DOI: 10.31399/asm.hb.v05b.a0006012
EISBN: 978-1-62708-172-6
... long as one dimension is in the nanoscale range. Fig. 1 Particle geometries of nanomaterials. (a) Nanosphere or nanoparticle. (b) Nanorod, nanowire, or nanotube. (c) Nanoplate or nanofilm. (d) Nanopore Due to their small size, nanomaterials have extremely high surface area. The volume ( V...
Series: ASM Desk Editions
Publisher: ASM International
Published: 01 November 1995
DOI: 10.31399/asm.hb.emde.a0003009
EISBN: 978-1-62708-200-6
..., polyaryl sulfones/polyether sulfones, polybenzimidazoles, polyether-imides, polyimides, and liquid crystal polymers. Other classifications could be added, such as an intermediate high-performance group, which would include polysulfones and could include polyphenylene sulfides; and specialty high...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006657
EISBN: 978-1-62708-213-6
... indicated that the coating is cerium-rich oxide containing Ce +III and Ce +IV chemical states. Cross-sectional evaluations using SEM indicated that the ~2 μm thick coating is relatively uniform. A few surface defects, including cracks and voids, are visible. Surface composition uniformity examined by using...
Series: ASM Desk Editions
Publisher: ASM International
Published: 01 November 1995
DOI: 10.31399/asm.hb.emde.a0003067
EISBN: 978-1-62708-200-6
... into two basic groups, distinguished by the amount of internal stress present in the part: annealed glass and tempered glass. Laminated glass, used primarily for windshields, consists of glass with a plastic-like material, typically polyvinyl butyral (PVB), adhered between the glass layers...
Series: ASM Desk Editions
Publisher: ASM International
Published: 01 November 1995
DOI: 10.31399/asm.hb.emde.a0003057
EISBN: 978-1-62708-200-6
...-specific Li to U Li to U Al except H, He, Li All except H, He Destructive No, except during depth profiling No No No No No Yes Yes No No Chemical bonding Chemical states Yes (edge profiles) Rarely No Yes (functional groups) Yes No Sometimes (from EELS) Not normally Chemical...