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group II-VI semiconductors

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Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001284
EISBN: 978-1-62708-170-2
..., and IV semiconductors. chemical vapor deposition epitaxial deposition group III-V semiconductors group II-VI semiconductors group IV semiconductors kinetics metal-organic chemical vapor deposition metal-organic chemical vapor deposition reactor systems semiconductor films thermodynamics...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006670
EISBN: 978-1-62708-213-6
... spin resonance; NMR: nanomagnetic resonance; UV-vis: ultraviolet-visible spectroscopy; XRS: x-ray Raman spectroscopy; NAA: neutron activation analysis; FTIR: Fourier-transform infrared spectrometry; RS: Raman spectroscopy; GC: gas chromatography; GC-MS: gas chromatography-mass spectrometry; LC: liquid...
Series: ASM Handbook
Volume: 20
Publisher: ASM International
Published: 01 January 1997
DOI: 10.31399/asm.hb.v20.a0002475
EISBN: 978-1-62708-194-8
... are either group IV elements, silicon (Si) and germanium (Ge), or composite—formed by two or more group III–V or group IIVI materials, such as GaAs ( Ref 3 ). The magnetic materials can be metals, alloys, and ceramics. They all have the ability to carry high magnetic flux in response to applied...
Book Chapter

By Jerome Kruger
Series: ASM Handbook
Volume: 13A
Publisher: ASM International
Published: 01 January 2003
DOI: 10.31399/asm.hb.v13a.a0003585
EISBN: 978-1-62708-182-5
.... and Sugano T. , Ed., Passivation of Metals and Semiconductors, Part II, Passivity of Semiconductors , Pergamon Press , 1990 6. Heusler K.E. , Ed., Passivation of Metals and Semiconductors , Materials Science Forum, Vol 185–188 , Trans Tech Publications , 1995 7. Ives M.B...
Series: ASM Handbook
Volume: 18
Publisher: ASM International
Published: 31 December 2017
DOI: 10.31399/asm.hb.v18.a0006402
EISBN: 978-1-62708-192-4
... of development. When going from categories V and VI to categories II and I, the impact of design overrules the influence of metallurgy or materials choice. This article introduces the general categories of tribological testing and describes the basic objectives of testing, which include: Evaluation...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001265
EISBN: 978-1-62708-170-2
... of the overwhelming commercial importance, in this chapter we will confine discussion to formaldehyde-based systems. For Cu(II), the relevant half-cell reaction for electroless deposition is: Cu 2 + + 2 e − ↔ Cu 0     E 0 = + 0.340 V For formaldehyde, the E 0 depends...
Series: ASM Handbook
Volume: 20
Publisher: ASM International
Published: 01 January 1997
DOI: 10.31399/asm.hb.v20.a0002467
EISBN: 978-1-62708-194-8
... selected, but will vary as a function of structure, processing, or the effect of external variables such as temperature, section size, or surface finish. The particular property and materials classes important for application vary among industrial groups as indicated in Table 1 , but the materials...
Book Chapter

By S.L. Rohde
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001288
EISBN: 978-1-62708-170-2
.... Recently there has been a move away from simple binary alloy coatings into multicomponent coatings to provide increased film “tailorability.” This trend can be observed both in microelectronics, with investigations into ternary and quaternary II-V and IIVI systems, and in the area of hard, wear-resistant...
Series: ASM Handbook Archive
Volume: 10
Publisher: ASM International
Published: 01 January 1986
DOI: 10.31399/asm.hb.v10.9781627081788
EISBN: 978-1-62708-178-8
Series: ASM Handbook
Volume: 23A
Publisher: ASM International
Published: 12 September 2022
DOI: 10.31399/asm.hb.v23A.a0006898
EISBN: 978-1-62708-392-8
... are mentioned in the literature ( Ref 30 – 32 ). The piezoelectric property can be introduced in semiconductor group III-V and II-VI materials, such aluminum nitride, indium nitride, and gallium nitride, due to their wurtzite structure. For better output and flexibility, choosing a good material...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.9781627082136
EISBN: 978-1-62708-213-6
Series: ASM Handbook
Volume: 24A
Publisher: ASM International
Published: 30 June 2023
DOI: 10.31399/asm.hb.v24A.a0006954
EISBN: 978-1-62708-439-0
... welding, places the camera so that it shares the same optical path as the processing laser. As a result, the laser spot and melt pool remain fixed within the field of view of the camera. A beam splitter is used to separate the laser wavelength from the visible (VIS) spectrum or other wavelengths observed...
Series: ASM Handbook
Volume: 22A
Publisher: ASM International
Published: 01 December 2009
DOI: 10.31399/asm.hb.v22a.a0005429
EISBN: 978-1-62708-196-2
... information and atomic parameters for δ-MoNi Phase System Strukturbericht type Space group Estimated %Mo δ-MoNi Orthorhombic None P2 1 2 1 2 1 Atoms Atomic parameters           IV 0.4519 0.1153 0.5322   0 VI 0.4424 0.3662 0.5972   0 VIII 0.3882 0.0523 0.2748   0...
Series: ASM Handbook Archive
Volume: 10
Publisher: ASM International
Published: 01 January 1986
DOI: 10.31399/asm.hb.v10.a0001772
EISBN: 978-1-62708-178-8
... Abstract Field ion microscopy (FIM) can be used to study the three-dimensional structure of materials, such as metals and semiconductors, because successive atom layers can be ionized and removed from the surface by field evaporation. The ions removed from the surface by field evaporation can...
Series: ASM Desk Editions
Publisher: ASM International
Published: 01 November 1995
DOI: 10.31399/asm.hb.emde.9781627082006
EISBN: 978-1-62708-200-6
Series: ASM Desk Editions
Publisher: ASM International
Published: 01 November 1995
DOI: 10.31399/asm.hb.emde.a0003068
EISBN: 978-1-62708-200-6
... layer. Ablation is an exothermic process. extruder. The plastic melt is stored, or "accumulated such as the ABS group. The acrylates may be methyl, in this auxiliary cylinder until the next shot or parison ethyl, butyl, or 2-ethylhexyl. Usual methacrylates are ABL bottle. An internal pressure test...
Series: ASM Handbook
Volume: 22A
Publisher: ASM International
Published: 01 December 2009
DOI: 10.31399/asm.hb.v22a.a0005413
EISBN: 978-1-62708-196-2
... into a steep, almost linear branch, called stage II. The slope in this stage is athermal: It depends on crystal orientation but not on temperature, except for the temperature dependence of the shear modulus. Stage III follows as the slope of the stress-strain curve decreases gradually, tending toward...
Series: ASM Handbook
Volume: 24A
Publisher: ASM International
Published: 30 June 2023
DOI: 10.31399/asm.hb.v24A.a0006980
EISBN: 978-1-62708-439-0
... A. , Prathumwan R. , Junpha J. , and Subannajui K. , Metal Oxide Semiconductor 3D Printing: Preparation of Copper(II) Oxide by Fused Deposition Modelling for Multifunctional Semiconducting Applications , J. Mater. Chem. C , Vol 5 (No. 19 ), 2017 , p 4614 – 4620 10.1039/C7TC00990A 13...
Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0001117
EISBN: 978-1-62708-162-7
... Standard Electrode Potential At 25 °C, 0.87 V versus standard hydrogen electrode Ionization Potentials Degree of ionization Potential, eV I 8.296 II 23.98 III 37.75 IV 258.1 V 338 Semiconductor Properties p -type dopant for silicon and germanium...
Series: ASM Desk Editions
Publisher: ASM International
Published: 01 November 1995
DOI: 10.31399/asm.hb.emde.a0003059
EISBN: 978-1-62708-200-6
... oxygen ions are almost invariably arrayed around a central silicon. Silicates can be classified according to the manner in which the silica tetrahedral are linked together ( Fig. 7 ). Fig. 7 Silica tetrahedral groupings. (a) Two linked units. (b) Three-unit ring. (c) Four-unit ring. (d) Six-unit...