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group II-VI semiconductors

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Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001284
EISBN: 978-1-62708-170-2
...-V, II-VI, and IV semiconductors. chemical vapor deposition epitaxial deposition group III-V semiconductors group II-VI semiconductors group IV semiconductors kinetics metal-organic chemical vapor deposition metal-organic chemical vapor deposition reactor systems semiconductor films...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006670
EISBN: 978-1-62708-213-6
... characterization of semiconductors. ICP-MS: inductively coupled mass spectrometry; ESR: electron spin resonance; NMR: nanomagnetic resonance; UV-vis: ultraviolet-visible spectroscopy; XRS: x-ray Raman spectroscopy; NAA: neutron activation analysis; FTIR: Fourier-transform infrared spectrometry; RS: Raman...
Book Chapter

By S.L. Rohde
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001288
EISBN: 978-1-62708-170-2
... multicomponent coatings to provide increased film “tailorability.” This trend can be observed both in microelectronics, with investigations into ternary and quaternary II-V and IIVI systems, and in the area of hard, wear-resistant coatings of TiAlN, TiZrN, and TiVN ( Ref 86 ). For example, for enhanced...
Series: ASM Handbook
Volume: 22A
Publisher: ASM International
Published: 01 December 2009
DOI: 10.31399/asm.hb.v22a.a0005413
EISBN: 978-1-62708-196-2
... into a steep, almost linear branch, called stage II. The slope in this stage is athermal: It depends on crystal orientation but not on temperature, except for the temperature dependence of the shear modulus. Stage III follows as the slope of the stress-strain curve decreases gradually, tending toward a...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001265
EISBN: 978-1-62708-170-2
... “Environmental and Safety Issues” in this article). Because of the overwhelming commercial importance, in this chapter we will confine discussion to formaldehyde-based systems. For Cu(II), the relevant half-cell reaction for electroless deposition is: Cu 2 + + 2 e − ↔ Cu 0     E...
Series: ASM Desk Editions
Publisher: ASM International
Published: 01 November 1995
DOI: 10.31399/asm.hb.emde.a0003059
EISBN: 978-1-62708-200-6
... invariably arrayed around a central silicon. Silicates can be classified according to the manner in which the silica tetrahedral are linked together ( Fig. 7 ). Fig. 7 Silica tetrahedral groupings. (a) Two linked units. (b) Three-unit ring. (c) Four-unit ring. (d) Six-unit ring. Adopted from Ref 2...