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gallium compounds

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Series: ASM Handbook
Volume: 3
Publisher: ASM International
Published: 27 April 2016
DOI: 10.31399/asm.hb.v03.a0006163
EISBN: 978-1-62708-163-4
... Abstract This article is a compilation of binary alloy phase diagrams for which gallium (Ga) is the first named element in the binary pair. The diagrams are presented with element compositions in weight percent. The atomic percent compositions are given in a secondary scale. For each binary...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001249
EISBN: 978-1-62708-170-2
... Abstract This article focuses on the electrodeposition of indium and its alloys, such as indium-antimony, indium-gallium, and indium-bismuth, in nonaqueous indium plating baths. It also provides information on the stripping of indium plate from plated components and presents an overview of the...
Series: ASM Handbook
Volume: 23
Publisher: ASM International
Published: 01 June 2012
DOI: 10.31399/asm.hb.v23.a0005670
EISBN: 978-1-62708-198-6
... brief discussion on the ancient history of noble and precious metal use in dentistry is provided. The article discusses the use of direct gold dental filling materials, direct silver dental filling materials, traditional amalgam alloys, high-copper amalgam alloys, and gallium alloys in biomedical...
Series: ASM Handbook
Volume: 13B
Publisher: ASM International
Published: 01 January 2005
DOI: 10.31399/asm.hb.v13b.a0003825
EISBN: 978-1-62708-183-2
... or nitrogen. Table 6 Effects of molten metals on tantalum Metal Remarks Temperature, °C (°F) Code (a) Aluminum Forms Al 3 Ta Molten NR Antimony … to 1000 (1830) NR Bismuth … to 900 (1650) E Cadmium … Molten E Gallium … to 450 (840) E Lead … to 1000...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001284
EISBN: 978-1-62708-170-2
... epitaxy. One is the flexibility of depositing films with distinctly different compositions than the substrates. Even disparate chemistries can be used to deposit epitaxial films, as long as the lattice constant is matched sufficiently to the substrate. An example is the growth of gallium arsenide on...
Series: ASM Handbook
Volume: 3
Publisher: ASM International
Published: 27 April 2016
DOI: 10.31399/asm.hb.v03.a0006178
EISBN: 978-1-62708-163-4
...” “Fe-Mo (Iron - Molybdenum)” in the article “Fe (Iron) Binary Alloy Phase Diagrams” “Ga-Mo (Gallium - Molybdenum)” in the article “Ga (Gallium) Binary Alloy Phase Diagrams” “Ge-Mo (Germanium - Molybdenum)” in the article “Ge (Germanium) Binary Alloy Phase Diagrams” “Hf-Mo (Hafnium...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006670
EISBN: 978-1-62708-213-6
... most common in application. Compound semiconductors may be binary combinations of rows 3 and 5 of the periodic table (e.g., GaAs), rows 2 and 6 of the periodic table (e.g., CdTe), or more complex compounds arising from three or more elements, such as aluminum gallium arsenide and Cu(In,Ga)Se 2 ( Ref 1...
Series: ASM Handbook
Volume: 13B
Publisher: ASM International
Published: 01 January 2005
DOI: 10.31399/asm.hb.v13b.a0003829
EISBN: 978-1-62708-183-2
... possible above 600 °C (1110 °F) Table 5 lists corrosion rate data for silver in nearly 100 organic compound environments. Silver is satisfactory for use in nearly 90% of these environments. Several of the organics for which silver is not recommended did not attack silver; rather, silver affected...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.9781627082136
EISBN: 978-1-62708-213-6
Series: ASM Desk Editions
Publisher: ASM International
Published: 01 November 1995
DOI: 10.31399/asm.hb.emde.a0003059
EISBN: 978-1-62708-200-6
... presence of iron, indium, or gallium will tend to stabilize the inverse spinel. Compounds exhibiting the inverse spinel structure include MgFe 2 O 4 , TiFe 2 O 4 , Fe 3 O 4 , SnZn 2 O 4 , NiFe 2 O 4 , TiMg 2 O 4 , VMg 2 O 4 , CoFe 2 O 4 , CuFe 2 O 4 , SnCo 2 O 4 , TiZn 2 O 4 , MgGa 2 O 4 , MgIn 2 O 4...
Series: ASM Handbook
Volume: 3
Publisher: ASM International
Published: 27 April 2016
DOI: 10.31399/asm.hb.v03.a0006177
EISBN: 978-1-62708-163-4
... the article “Er (Erbium) Binary Alloy Phase Diagrams.” “Fe-Mn (Iron - Manganese)” in the article “Fe (Iron) Binary Alloy Phase Diagrams.” “Ga-Mn (Gallium - Manganese)” in the article “Ga (Gallium) Binary Alloy Phase Diagrams.” “Gd-Mn (Gadolinium - Manganese)” in the article “Gd...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006657
EISBN: 978-1-62708-213-6
... electron image of the cleaved section, with the grouped 50, 20, and 10 nm lattices identified. Figure 27 shows the secondary electron image of the 10 nm structure and a gallium Auger image. The 10 nm GaAs (yellow regions) and the AlAs (red regions) are readily distinguishable, and the spacings are...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006651
EISBN: 978-1-62708-213-6
..., copper, zinc, titanium, gallium, and iron. Direct analysis in real-time mass spectrometry is used to determine the extent of spreading of mold-release formulations consisting of poly(dimethyl siloxane) (PDMS) and solvent. Matrix-assisted laser-desorption ionization mass spectrometry...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006641
EISBN: 978-1-62708-213-6
... gallium can become a source of contamination, especially during a high-temperature annealing step. The worst case showed that gallium spreading could be as large as 1 cm (0.4 in.) from the center of the refilled material on a wafer. Laser ablation ICP-MS was used to measure vertical and lateral...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001286
EISBN: 978-1-62708-170-2
... is mutual solid solubility between the film and substrate material and the temperature and time are sufficient to allow diffusion to occur. This type of interfacial system is often found in metallic systems. Some systems, such as silver on iron and indium, or gallium on GaAs, have no solubility and...
Series: ASM Handbook
Volume: 13B
Publisher: ASM International
Published: 01 January 2005
DOI: 10.31399/asm.hb.v13b.a0003810
EISBN: 978-1-62708-183-2
... Limited Poor Gallium 29.8 Unknown Unknown Bismuth-lead-tin 97 Good Unknown Bismuth-lead 125 Unknown Unknown Tin 321.9 Limited Poor Bismuth 271.3 Unknown Unknown Lead 327 Good at 327 °C (621 °F) Unknown Indium 156.4 Unknown Unknown Lithium 186 Unknown...
Series: ASM Handbook
Volume: 4E
Publisher: ASM International
Published: 01 June 2016
DOI: 10.31399/asm.hb.v04e.a0006250
EISBN: 978-1-62708-169-6
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001285
EISBN: 978-1-62708-170-2
... Fig. 3 . This reactor was designed and built at the Massachusetts Institute of Technology ( Ref 23 ) for metallo-organic CVD (i.e., CVD where some of the source gases are metallo-organic compounds) of gallium arsenide. The reactor consists of three vertically aligned concentric regions. The group III...
Book Chapter

Series: ASM Desk Editions
Publisher: ASM International
Published: 01 December 1998
DOI: 10.31399/asm.hb.mhde2.a0003145
EISBN: 978-1-62708-199-3
... zinc, silver, thallium, or gallium. Many of the fusible alloys used in industrial applications are based on eutectic compositions. These alloys find important uses in automatic safety devices such as fire sprinklers, boiler plugs, and furnace controls. Under ambient temperature, these alloys have...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001287
EISBN: 978-1-62708-170-2
... borderline between evaporation and sublimation. Chromium has a vapor pressure of 1.3 Pa (10 −2 torr) at 600 °C (1080 °F) below its melting point, and carbon cannot be melted except under high hydrostatic pressure. Materials such as aluminum, tin, gallium, and lead have very low vapor pressures above the...