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gallium arsenide

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Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0001091
EISBN: 978-1-62708-162-7
... temperatures. This article discusses the uses of gallium in optoelectronic devices and integrated circuits and applications of gallium. The article discusses the properties and grades of gallium arsenide and also provides information on resources of gallium. The article talks about the recovery techniques...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001284
EISBN: 978-1-62708-170-2
... and kinetic processes responsible for epitaxial growth also are presented. Technique Principles Vapor-Phase Epitaxy Tietjen and Amick ( Ref 1 ) demonstrated the growth of gallium arsenide phosphide (GaAsP) by VPE in 1966. The growth of materials based on indium phosphide (InP) can be achieved...
Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0001090
EISBN: 978-1-62708-162-7
... 1960s. The use of germanium as a semiconductor substrate deserves special mention. In this application, single-crystal wafers of germanium are used as substrates for the epitaxial deposition of gallium arsenide (GaAs) or gallium arsenide phosphide (GaAsP) for use as light-emitting diodes or solar...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001249
EISBN: 978-1-62708-170-2
...Abstract Abstract This article focuses on the electrodeposition of indium and its alloys, such as indium-antimony, indium-gallium, and indium-bismuth, in nonaqueous indium plating baths. It also provides information on the stripping of indium plate from plated components and presents...
Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0001115
EISBN: 978-1-62708-162-7
... has been purified to the 99.9999% level using this method. This purity is required for the manufacture of semiconducting gallium arsenide, which is used in light-emitting diodes and as substrates for high-speed digital and monolithic microwave integrated circuits. Additional information is available...
Series: ASM Handbook Archive
Volume: 10
Publisher: ASM International
Published: 01 January 1986
DOI: 10.31399/asm.hb.v10.a0001772
EISBN: 978-1-62708-178-8
... method in 5% aqueous sodium hydroxide solution (by weight), 5–6 V ac Silicon Polish chemically in a solution of 15% concentrated nitric acid, 80% hydrofluoric acid (40% solution), and 5% glacial acetic acid. Finish by ion milling if required Gallium arsenide Polish chemically in a solution of 44...
Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0001113
EISBN: 978-1-62708-162-7
... to be important. There exists a well-established superconductive integrated circuit technology based on niobium with work being done on NbN. The Fujitsu group ( Ref 46 ) in Japan has produced a four-bit chip that ran at 1.1 GHz dissipating only 6.1 mW of power, which surpasses gallium arsenide semiconductor...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006670
EISBN: 978-1-62708-213-6
... of the microelectronics industry. This section also considers germanium, gallium arsenide (GaAs), and the various epitaxial thin film semiconductors that can be grown on single-crystal wafer substrates. These materials are characterized first by their single-crystal nature and lack of transverse phase domains or grain...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001285
EISBN: 978-1-62708-170-2
... of a remote PECVD system is shown in Fig. 3 . This reactor was designed and built at the Massachusetts Institute of Technology ( Ref 23 ) for metallo-organic CVD (i.e., CVD where some of the source gases are metallo-organic compounds) of gallium arsenide. The reactor consists of three vertically aligned...
Series: ASM Handbook
Volume: 21
Publisher: ASM International
Published: 01 January 2001
DOI: 10.31399/asm.hb.v21.a0003480
EISBN: 978-1-62708-195-5
... in electronics, illustrates the limitations of traditional packaging materials. In order to minimize thermal stresses in many packaging designs, it is necessary to match the CTEs of semiconductors like silicon and gallium arsenide and ceramics used for substrates, such as alumina, beryllia, and aluminum nitride...
Series: ASM Handbook
Volume: 20
Publisher: ASM International
Published: 01 January 1997
DOI: 10.31399/asm.hb.v20.a0002467
EISBN: 978-1-62708-194-8
Series: ASM Handbook
Volume: 17
Publisher: ASM International
Published: 01 August 2018
DOI: 10.31399/asm.hb.v17.a0006460
EISBN: 978-1-62708-190-0
... δ lim ( Ref 46 ). Better sensitivity has been demonstrated with a cadmium-telluride crystal with vanadium doping ( Ref 47 ), but cadmium-telluride photorefractive crystals need further development before becoming a reliable source for such a device. At 1.06 μm, gallium-arsenide crystals also...
Series: ASM Handbook
Volume: 9
Publisher: ASM International
Published: 01 December 2004
DOI: 10.31399/asm.hb.v09.a0003748
EISBN: 978-1-62708-177-1
... acid Use at 50–60 °C (120–140 °F) for 20 s Gallium arsenide 5 mL HCl 5 mL HNO 3 40 mL glycerin Suspend sample in solution, agitate lightly to dislodge bubbles. Polishing rate is 0.37 mg/(cm 2 · min) Gallium phosphide 100 mL methanol Saturate with chlorine Use under hood, 5–20 min...
Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0001119
EISBN: 978-1-62708-162-7
..., beryllium, cadmium, chromium, lead, mercury, and nickel; (2) essential metals with potential for toxicity, including cobalt, copper, iron, manganese, molybdenum, selenium, and zinc; (3) metals with toxicity related to medical therapy, including aluminum, bismuth, gallium, gold, lithium, and platinum; and (4...
Series: ASM Handbook
Volume: 8
Publisher: ASM International
Published: 01 January 2000
DOI: 10.31399/asm.hb.v08.a0003267
EISBN: 978-1-62708-176-4
..., is a AuFe alloy versus Chromel thermocouple. Electronic temperature sensors (diodes and resistance devices) are available with readout devices that have higher precision than thermocouples. Silicon diodes, gallium-aluminum-arsenide diode, carbon glass resistor, platinum resistor, and germanium resistor...
Series: ASM Handbook
Volume: 5A
Publisher: ASM International
Published: 01 August 2013
DOI: 10.31399/asm.hb.v05a.a0005707
EISBN: 978-1-62708-171-9
Series: ASM Handbook
Volume: 9
Publisher: ASM International
Published: 01 December 2004
DOI: 10.31399/asm.hb.v09.a0003764
EISBN: 978-1-62708-177-1
...–140 °F) for 20 s. Packard Gallium arsenide 5 mL HCl 5 mL HNO 3 40 mL glycerin Suspend sample in solution, agitate lightly to dislodge bubbles. Polishing rate is 0.37 mg/(cm 2 ·min). Fuller/Allison Gallium phosphide 100 mL methanol Saturate with chlorine Use under hood, 5–20 min. Haynes...
Series: ASM Handbook
Volume: 2A
Publisher: ASM International
Published: 30 November 2018
DOI: 10.31399/asm.hb.v02a.a0006532
EISBN: 978-1-62708-207-5
... polarized one. The circularly polarized beam is used to avoid the directional effect that would result from a linearly polarized beam. A focusing lens is used to produce a small spot of laser beam with high energy density. Sodium chloride, germanium, potassium chloride, zinc selenide, and gallium arsenide...
Series: ASM Handbook
Volume: 13B
Publisher: ASM International
Published: 01 January 2005
DOI: 10.31399/asm.hb.v13b.a0003839
EISBN: 978-1-62708-183-2
... volume fraction. The high reinforcement loading in electronic-grade MMCs is necessary to reduce the coefficient of thermal expansion to levels closer to that of electronic materials such as silicon and gallium arsenide. Fig. 2 Range in amount of reinforcement. (a) SiC P /6061-T6 Al metal-matrix...
Book Chapter

Series: ASM Handbook
Volume: 3
Publisher: ASM International
Published: 27 April 2016
DOI: 10.31399/asm.hb.v03.a0006292
EISBN: 978-1-62708-163-4
... in the unit cell conventionally selected for the particular crystal type. For example, the nickel-arsenide structure is referred to as the NiAs hP 4 type (meaning hexagonal, primitive, 4 atoms per unit cell) and rock salt as the NaCl cF 8 type. The arbitrariness in the system does not appear...