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gallium arsenide
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Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0001091
EISBN: 978-1-62708-162-7
... temperatures. This article discusses the uses of gallium in optoelectronic devices and integrated circuits and applications of gallium. The article discusses the properties and grades of gallium arsenide and also provides information on resources of gallium. The article talks about the recovery techniques...
Abstract
Gallium-base components can be found in a variety of products ranging from compact disk players to advanced military electronic warfare systems, owing to the factor that it can emit light, has a greater resistance to radiation and operates at faster speeds and higher temperatures. This article discusses the uses of gallium in optoelectronic devices and integrated circuits and applications of gallium. The article discusses the properties and grades of gallium arsenide and also provides information on resources of gallium. The article talks about the recovery techniques, including recovery from bauxite, zinc ore and secondary recovery process and purification. The article briefly describes the fabrication process of gallium arsenide crystals. Furthermore, the article gives a short note on world supply and demand of gallium and concludes with research and development on gallium arsenide integrated circuits.
Book: Surface Engineering
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001284
EISBN: 978-1-62708-170-2
... and kinetic processes responsible for epitaxial growth also are presented. Technique Principles Vapor-Phase Epitaxy Tietjen and Amick ( Ref 1 ) demonstrated the growth of gallium arsenide phosphide (GaAsP) by VPE in 1966. The growth of materials based on indium phosphide (InP) can be achieved...
Abstract
This article describes the vapor-phase growth techniques applied to the epitaxial deposition of semiconductor films and discusses the fundamental processes involved in metal-organic chemical vapor deposition (MOCVD). It reviews the thermodynamics that determine the driving force behind the overall growth process and the kinetics that define the rates at which the various processes occur. The article provides information on the reactor systems and hardware, MOCVD starting materials, engineering considerations that optimize growth, and the growth parameters for a variety of Group III-V, II-VI, and IV semiconductors.
Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0001090
EISBN: 978-1-62708-162-7
... 1960s. The use of germanium as a semiconductor substrate deserves special mention. In this application, single-crystal wafers of germanium are used as substrates for the epitaxial deposition of gallium arsenide (GaAs) or gallium arsenide phosphide (GaAsP) for use as light-emitting diodes or solar...
Abstract
Germanium is a semiconducting metalloid element found in Group IV A. Germanium is used in the field of electronics, infrared optics, and in the fields of gamma ray spectroscopy, catalysis, and fiber optics. This article discusses the sources, manufacturing, and processing of germanium, and focuses on the chemical properties of various germanium compounds, including germanium halides, germanates, germanides, germanes, inorganic, and organogermanium compounds. It also tabulates the physical, thermal, electronic, and optical properties of germanium, and explains the economical aspects and specifications of germanium. The article describes the analytical and test methods of germanium, including gravimetric method, titrimetric method, and spectral method. It provides a short note on toxicology, and concludes with the uses of germanium in different fields.
Book: Surface Engineering
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001249
EISBN: 978-1-62708-170-2
...Abstract Abstract This article focuses on the electrodeposition of indium and its alloys, such as indium-antimony, indium-gallium, and indium-bismuth, in nonaqueous indium plating baths. It also provides information on the stripping of indium plate from plated components and presents...
Abstract
This article focuses on the electrodeposition of indium and its alloys, such as indium-antimony, indium-gallium, and indium-bismuth, in nonaqueous indium plating baths. It also provides information on the stripping of indium plate from plated components and presents an overview of the specifications, standards, and hazards of indium plating.
Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0001115
EISBN: 978-1-62708-162-7
... has been purified to the 99.9999% level using this method. This purity is required for the manufacture of semiconducting gallium arsenide, which is used in light-emitting diodes and as substrates for high-speed digital and monolithic microwave integrated circuits. Additional information is available...
Abstract
The electronic microcircuit industry has placed severe demands on metal suppliers to provide metals of the highest reproducible purity attainable as a result of the constant quest for the true values of physical and chemical properties of metals. This article describes the commonly used methods for ultrapurification of metals produced by electrolytic processes, including fractional crystallization, zone refining, vacuum melting, distillation, chemical vapor deposition, and solid state refining techniques. In addition, it describes the trace element analysis and resistance-ratio test methods used to characterize purity. Tables list the values for resistance ratios of zone-refined metals and their corresponding chemical compositions, and provide an example of the detection of impurities to concentrations in the parts per billion range, utilizing a combination of the glow discharge mass spectroscopy method and Leco combustion methods.
Series: ASM Handbook Archive
Volume: 10
Publisher: ASM International
Published: 01 January 1986
DOI: 10.31399/asm.hb.v10.a0001772
EISBN: 978-1-62708-178-8
... method in 5% aqueous sodium hydroxide solution (by weight), 5–6 V ac Silicon Polish chemically in a solution of 15% concentrated nitric acid, 80% hydrofluoric acid (40% solution), and 5% glacial acetic acid. Finish by ion milling if required Gallium arsenide Polish chemically in a solution of 44...
Abstract
Field ion microscopy (FIM) can be used to study the three-dimensional structure of materials, such as metals and semiconductors, because successive atom layers can be ionized and removed from the surface by field evaporation. The ions removed from the surface by field evaporation can be analyzed chemically by coupling to the microscope a time-of-flight mass spectrometer of single-particle sensitivity, known as the atom probe (AP). This article describes the principles, sample preparation, and quantitative analysis of FIM. It also provides information on the principles, instrument design and operation, mass spectra and their interpretation, and applications of AP microanalysis.
Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0001113
EISBN: 978-1-62708-162-7
... to be important. There exists a well-established superconductive integrated circuit technology based on niobium with work being done on NbN. The Fujitsu group ( Ref 46 ) in Japan has produced a four-bit chip that ran at 1.1 GHz dissipating only 6.1 mW of power, which surpasses gallium arsenide semiconductor...
Abstract
This article focuses on different thin-film deposition techniques used to make superconducting films and discusses the properties and advantages of high-critical-temperature and low-critical-temperature materials in a number of applications, including signal processing and analog electronic devices. The article gives a brief introduction on superconducting materials, substrates and buffer layers and discusses the major deposition techniques such as, electron-beam co-evaporation, sputtering from either a composite target or multiple sources and laser ablation. The article also describes the in-situ film growth techniques for producing atomic oxygen by radio frequency excitation or microwave discharge or with ozone.
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006670
EISBN: 978-1-62708-213-6
... of the microelectronics industry. This section also considers germanium, gallium arsenide (GaAs), and the various epitaxial thin film semiconductors that can be grown on single-crystal wafer substrates. These materials are characterized first by their single-crystal nature and lack of transverse phase domains or grain...
Abstract
This article introduces various techniques commonly used in the characterization of semiconductors, namely single-crystal, polycrystalline, amorphous, oxide, organic, and low-dimensional semiconductors and semiconductor devices. The discussion covers material classification, fabrication methods, sample preparation, bulk/elemental characterization methods, microstructural characterization methods, surface characterization methods, and electronic characterization methods.
Book: Surface Engineering
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001285
EISBN: 978-1-62708-170-2
... of a remote PECVD system is shown in Fig. 3 . This reactor was designed and built at the Massachusetts Institute of Technology ( Ref 23 ) for metallo-organic CVD (i.e., CVD where some of the source gases are metallo-organic compounds) of gallium arsenide. The reactor consists of three vertically aligned...
Abstract
This article discusses the application of amorphous and crystalline films through plasma-enhanced chemical vapor deposition (PECVD) from the view point of microelectronic device fabrication. It describes the various types of PECVD reactors and deposition techniques. Plasma enhancement of the CVD process is discussed briefly. The article also describes the properties of amorphous and crystalline films deposited by the PECVD process for integrated circuit fabrication.
Book: Composites
Series: ASM Handbook
Volume: 21
Publisher: ASM International
Published: 01 January 2001
DOI: 10.31399/asm.hb.v21.a0003480
EISBN: 978-1-62708-195-5
... in electronics, illustrates the limitations of traditional packaging materials. In order to minimize thermal stresses in many packaging designs, it is necessary to match the CTEs of semiconductors like silicon and gallium arsenide and ceramics used for substrates, such as alumina, beryllia, and aluminum nitride...
Abstract
This article presents an overview of advanced composites, namely, polymer matrix composites, metal-matrix composites, ceramic-matrix composites, and carbon-matrix composites. It also provides information on the properties and applications of the composites in thermal management and electronic packaging.
Series: ASM Handbook
Volume: 20
Publisher: ASM International
Published: 01 January 1997
DOI: 10.31399/asm.hb.v20.a0002467
EISBN: 978-1-62708-194-8
Abstract
This article examines material property data and the information needs at various points in the design, manufacture, and use cycle. It contains a table that lists the various sources of materials data. The article describes locating media for sources of data such as suppliers of databases and internet. It discusses the types of sources of data, including computer readable media, data centers, and print media. The article also reviews the methods for evaluation and interpretation of data and examines the processes of obtaining and reporting test data.
Series: ASM Handbook
Volume: 17
Publisher: ASM International
Published: 01 August 2018
DOI: 10.31399/asm.hb.v17.a0006460
EISBN: 978-1-62708-190-0
... δ lim ( Ref 46 ). Better sensitivity has been demonstrated with a cadmium-telluride crystal with vanadium doping ( Ref 47 ), but cadmium-telluride photorefractive crystals need further development before becoming a reliable source for such a device. At 1.06 μm, gallium-arsenide crystals also...
Abstract
Laser-ultrasonics is a particular implementation of ultrasonic nondestructive inspection in which ultrasound is generated and detected by lasers. This article discusses the various mechanisms that ensure ultrasound generation and explains the possibility to get the equivalent of phase-array by numerical processing of an array of previously acquired laser-ultrasonic signals. The article describes the ultrasound generation by thermoelastic mechanism and ablation or vaporization. It illustrates the principle of optical detection of ultrasound with confocal Fabry-Perot interferometer and photorefractive two-wave mixing interferometer. The article concludes with information on the industrial applications of laser-ultrasonics, including thickness measurement, flaw detection, and material characterization.
Book Chapter
Series: ASM Handbook
Volume: 9
Publisher: ASM International
Published: 01 December 2004
DOI: 10.31399/asm.hb.v09.a0003748
EISBN: 978-1-62708-177-1
... acid Use at 50–60 °C (120–140 °F) for 20 s Gallium arsenide 5 mL HCl 5 mL HNO 3 40 mL glycerin Suspend sample in solution, agitate lightly to dislodge bubbles. Polishing rate is 0.37 mg/(cm 2 · min) Gallium phosphide 100 mL methanol Saturate with chlorine Use under hood, 5–20 min...
Abstract
Metallographic preparation of a material involves the elimination of artifacts or scratches from fine polishing and may be achieved by methods such as attack polishing, vibratory polishing, chemical polishing, electrolytic polishing, and electromechanical polishing. This article discusses the mechanism, operating procedure, advantages, and limitations of chemical and electrolytic polishing of samples for metallographic preparation. It provides information on the specimen preparation, apparatus used, and safety precautions to be followed during the polishing process. The various groups of electrolytes used in electropolishing of several metals and alloys are reviewed. The article concludes with a discussion on local electropolishing.
Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0001119
EISBN: 978-1-62708-162-7
..., beryllium, cadmium, chromium, lead, mercury, and nickel; (2) essential metals with potential for toxicity, including cobalt, copper, iron, manganese, molybdenum, selenium, and zinc; (3) metals with toxicity related to medical therapy, including aluminum, bismuth, gallium, gold, lithium, and platinum; and (4...
Abstract
Metal contamination of the environment reflects both natural sources and industrial activity, affecting human health. This article begins with a discussion on the level of metal exposure resulting in toxicological effects, the factors influencing toxicity of metals, and carcinogenicity of metal compounds. It discusses some commonly used chelating agents for treating metal intoxication, and clinical effectiveness in treating poisoning by different metals. The metals discussed are grouped into four categories: (1) major toxic metals with multiple effects, including arsenic, beryllium, cadmium, chromium, lead, mercury, and nickel; (2) essential metals with potential for toxicity, including cobalt, copper, iron, manganese, molybdenum, selenium, and zinc; (3) metals with toxicity related to medical therapy, including aluminum, bismuth, gallium, gold, lithium, and platinum; and (4) minor toxic metals, including antimony, barium, indium, magnesium, silver, tellurium, thallium, tin, titanium, uranium, and vanadium. The main factors included in the discussion are their disposition, toxicity, biological factors and treatment.
Series: ASM Handbook
Volume: 8
Publisher: ASM International
Published: 01 January 2000
DOI: 10.31399/asm.hb.v08.a0003267
EISBN: 978-1-62708-176-4
..., is a AuFe alloy versus Chromel thermocouple. Electronic temperature sensors (diodes and resistance devices) are available with readout devices that have higher precision than thermocouples. Silicon diodes, gallium-aluminum-arsenide diode, carbon glass resistor, platinum resistor, and germanium resistor...
Abstract
This article provides a discussion on the mechanical properties of metals, ceramics, and polymers and fiber-reinforced polymer composites at low temperatures. It reviews the factors to be considered in tensile and compression testing of these materials. The article details the equipment used for low-temperature tensile and compression tests with illustrations. It concludes with a discussion on the various test methods and their ASTM standard for compression and tension testing.
Book: Thermal Spray Technology
Series: ASM Handbook
Volume: 5A
Publisher: ASM International
Published: 01 August 2013
DOI: 10.31399/asm.hb.v05a.a0005707
EISBN: 978-1-62708-171-9
Abstract
Coatings and other surface modifications are used for a variety of functional, economic, and aesthetic purposes. Two major applications of thermal spray coatings are for wear resistance and corrosion resistance. This article discusses thermal (surface hardening) and thermochemical (carburizing, nitriding, and boriding) surface modifications, electrochemical treatments (electroplating, and anodizing), chemical treatments (electroless plating, phosphating, and hot dip coating), hardfacing, and thermal spray processes. It provides information on chemical and physical vapor deposition techniques such as conventional CVD, laser-assisted CVD, cathodic arc deposition, molecular beam epitaxy, ion plating, and sputtering.
Book Chapter
Series: ASM Handbook
Volume: 9
Publisher: ASM International
Published: 01 December 2004
DOI: 10.31399/asm.hb.v09.a0003764
EISBN: 978-1-62708-177-1
...–140 °F) for 20 s. Packard Gallium arsenide 5 mL HCl 5 mL HNO 3 40 mL glycerin Suspend sample in solution, agitate lightly to dislodge bubbles. Polishing rate is 0.37 mg/(cm 2 ·min). Fuller/Allison Gallium phosphide 100 mL methanol Saturate with chlorine Use under hood, 5–20 min. Haynes...
Abstract
This article is a comprehensive collection of tables listing: dangerous reactions of chemicals and designations of etchants; chemical-polishing solutions for irons and steels and nonferrous materials; attack-polishing solutions, macrostructure etchants for iron and steel; and major microstructure etchants for common phases and constituents in ferrous materials.
Series: ASM Handbook
Volume: 2A
Publisher: ASM International
Published: 30 November 2018
DOI: 10.31399/asm.hb.v02a.a0006532
EISBN: 978-1-62708-207-5
... polarized one. The circularly polarized beam is used to avoid the directional effect that would result from a linearly polarized beam. A focusing lens is used to produce a small spot of laser beam with high energy density. Sodium chloride, germanium, potassium chloride, zinc selenide, and gallium arsenide...
Abstract
This article focuses on a variety of laser beam machining (LBM) operations of aluminum and its alloys, namely, laser cutting, laser drilling, laser milling, laser turning, laser grooving, laser scribing, laser marking, and laser micromachining. It presents different approaches for carrying out machining operations, laser processing parameters, efficiency and accuracy of the process, and the effect of laser processing parameters on the quality of the machined surface. The article provides an overview of the various conventional (chip forming) and nonconventional machining techniques employed for aluminum-based materials. A comparison of the various aspects of LBM with other non-conventional techniques is also presented. The article also describes the features of LBM techniques employed for aluminum and its alloys for different types of machining.
Book: Corrosion: Materials
Series: ASM Handbook
Volume: 13B
Publisher: ASM International
Published: 01 January 2005
DOI: 10.31399/asm.hb.v13b.a0003839
EISBN: 978-1-62708-183-2
... volume fraction. The high reinforcement loading in electronic-grade MMCs is necessary to reduce the coefficient of thermal expansion to levels closer to that of electronic materials such as silicon and gallium arsenide. Fig. 2 Range in amount of reinforcement. (a) SiC P /6061-T6 Al metal-matrix...
Abstract
This article begins with the discussion on the background of metal-matrix composites (MMC) and moves into a broad description of the general parameters affecting the corrosion of MMC. It discusses the primary sources of MMC corrosion that include galvanic corrosion between MMC constituents, chemical degradation of interphases and reinforcements, microstructure-influenced corrosion, and processing-induced corrosion. The article elaborates on the corrosion behavior of specific aluminum, magnesium, titanium, copper, stainless steel, lead, depleted uranium, and zinc MMCs systems. It concludes with a description on the corrosion control of MMCs using protective coatings and inhibitors.
Book Chapter
Book: Alloy Phase Diagrams
Series: ASM Handbook
Volume: 3
Publisher: ASM International
Published: 27 April 2016
DOI: 10.31399/asm.hb.v03.a0006292
EISBN: 978-1-62708-163-4
... in the unit cell conventionally selected for the particular crystal type. For example, the nickel-arsenide structure is referred to as the NiAs hP 4 type (meaning hexagonal, primitive, 4 atoms per unit cell) and rock salt as the NaCl cF 8 type. The arbitrariness in the system does not appear...
Abstract
This article defines crystallographic terms and concepts, including crystal structure, unit cell, structure symbols, lattice, space-group notation, and atom position. It schematically illustrates the atom positions, prototypes, structure symbols, space-group notations, and lattice parameters for some of the simple metallic crystals. A table that lists the crystal structures of various metal elements is presented. The crystal structures are described by the Pearson symbols for crystal system, space lattice, total number of atoms per unit cell, and prototype structure. The article tabulates the assorted structure types of metallurgical interest arranged according to Pearson symbol. It also provides information on crystal defects, explaining some significant ones, such as point defects, line defects, stacking faults, and twins.