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gallium arsenide

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Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001249
EISBN: 978-1-62708-170-2
... Abstract This article focuses on the electrodeposition of indium and its alloys, such as indium-antimony, indium-gallium, and indium-bismuth, in nonaqueous indium plating baths. It also provides information on the stripping of indium plate from plated components and presents an overview of the...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001284
EISBN: 978-1-62708-170-2
... epitaxy. One is the flexibility of depositing films with distinctly different compositions than the substrates. Even disparate chemistries can be used to deposit epitaxial films, as long as the lattice constant is matched sufficiently to the substrate. An example is the growth of gallium arsenide on...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001285
EISBN: 978-1-62708-170-2
... Fig. 3 . This reactor was designed and built at the Massachusetts Institute of Technology ( Ref 23 ) for metallo-organic CVD (i.e., CVD where some of the source gases are metallo-organic compounds) of gallium arsenide. The reactor consists of three vertically aligned concentric regions. The group III...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006670
EISBN: 978-1-62708-213-6
... the majority of the microelectronics industry. This section also considers germanium, gallium arsenide (GaAs), and the various epitaxial thin film semiconductors that can be grown on single-crystal wafer substrates. These materials are characterized first by their single-crystal nature and lack of...
Series: ASM Handbook
Volume: 13B
Publisher: ASM International
Published: 01 January 2005
DOI: 10.31399/asm.hb.v13b.a0003839
EISBN: 978-1-62708-183-2
...-grade MMCs is necessary to reduce the coefficient of thermal expansion to levels closer to that of electronic materials such as silicon and gallium arsenide. Fig. 2 Range in amount of reinforcement. (a) SiC P /6061-T6 Al metal-matrix composite (MMC) with 15 vol% reinforcement. (b) Si P /Al MMC...
Series: ASM Handbook
Volume: 17
Publisher: ASM International
Published: 01 August 2018
DOI: 10.31399/asm.hb.v17.a0006460
EISBN: 978-1-62708-190-0
... before becoming a reliable source for such a device. At 1.06 Ī¼m, gallium-arsenide crystals also are used without an electric field, giving a sensitivity reduced by about 2.5 compared to the maximum sensitivity of the confocal Fabry-Perot ( Ref 45 , 48 ). One important advantage of the photorefractive...
Series: ASM Desk Editions
Publisher: ASM International
Published: 01 November 1995
DOI: 10.31399/asm.hb.emde.a0003067
EISBN: 978-1-62708-200-6
Book Chapter

Series: ASM Handbook
Volume: 3
Publisher: ASM International
Published: 27 April 2016
DOI: 10.31399/asm.hb.v03.a0006292
EISBN: 978-1-62708-163-4
... in the unit cell conventionally selected for the particular crystal type. For example, the nickel-arsenide structure is referred to as the NiAs hP 4 type (meaning hexagonal, primitive, 4 atoms per unit cell) and rock salt as the NaCl cF 8 type. The arbitrariness in the system does not appear to...
Series: ASM Desk Editions
Publisher: ASM International
Published: 01 November 1995
DOI: 10.31399/asm.hb.emde.a0003059
EISBN: 978-1-62708-200-6
... presence of iron, indium, or gallium will tend to stabilize the inverse spinel. Compounds exhibiting the inverse spinel structure include MgFe 2 O 4 , TiFe 2 O 4 , Fe 3 O 4 , SnZn 2 O 4 , NiFe 2 O 4 , TiMg 2 O 4 , VMg 2 O 4 , CoFe 2 O 4 , CuFe 2 O 4 , SnCo 2 O 4 , TiZn 2 O 4 , MgGa 2 O 4 , MgIn 2 O 4...