This article is intended to provide the reader with a good understanding of the underlying science, technology, and the most common applications of focused ion beam (FIB) instruments. It begins with a survey of the various types of FIB instruments and their configurations, discusses the essential components, and explains their function only to the extent that it helps the operator obtain the desired results. An explanation of how the components of ion optical column shape and steer the ion beam to the desired target locations is then provided. The article also reviews the many diverse accessories and options that enable the instrument to realize its full potential across all of the varied applications. This is followed by a detailed analysis of the physical processes associated with the ion beam interacting with the sample. Finally, a complete survey of the most prominent FIB applications is presented.

In secondary ion mass spectroscopy (SIMS), an energetic beam of focused ions is directed at the sample surface in a high or ultrahigh vacuum (UHV) environment. The transfer of momentum from the impinging primary ions to the sample surface causes sputtering of surface atoms and molecules. This article focuses on the principles and applications of high sputter rate dynamic SIMS for depth profiling and bulk impurity analysis. It provides information on broad-beam instruments, ion microprobes, and ion microscopes, detailing their system components with illustrations. The article graphically illustrates the SIMS spectra and depth profiles of various materials. The quantitative analysis of ion-implantation profiles, instrumental features required for secondary ion imaging, the analysis of nonmetallic samples, detection sensitivity, and the applications of SIMS are also discussed.

This article focuses on the principles and applications of high-sputter-rate dynamic secondary ion mass spectroscopy (SIMS) for depth profiling and bulk impurity analysis. It begins with an overview of various factors pertinent to sputtering. This is followed by a discussion on the effects of ion implantation and electronic excitation on the charge of the sputtered species. The design and operation of the various instrumental components of SIMS is then reviewed. Details on a depth-profiling analysis of SIMS, the quantitative analysis of SIMS data, and the static mode of operation of time-of-flight SIMS are covered. Instrumental features required for secondary ion imaging are presented and the differences between quadrupole and high-resolution magnetic mass filters are described. The article also reviews the optimum method for analysis of nonmetallic samples and high detection sensitivity of SIMS. It ends with a discussion on a variety of examples of SIMS applications.

This article is a compilation of terms and definitions related to materials characterization.

The introduction of focused ion beam (FIB) microscopy in the 1990s added the capability of studying fracture surfaces in the third dimension and making site-specific and stress-free transmission electron microscope (TEM) specimens in situ. This article reviews the methods for preparing replicas and the site-specific FIB thin-foil preparation technique. It provides an overview of FIB-TEM specimen preparation.