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Published: 01 December 2004
Fig. 1 Concept of improved contrast between two phases from film deposition. The difference in reflectivity (Δ R ) between phases 1 and 2 is much greater with a film (Δ R n ) than without (Δ R 1 ). More
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Published: 01 January 1986
Fig. 9 Positive SIMS spectra for an organometallic silicate film deposited on a silicon substrate. Obtained using a scanning ion microprobe under inert argon bombardment More
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Published: 01 January 1994
Fig. 1 SEM micrograph of an electroless gold film deposit obtained using a cyanide-base system with potassium borohydride as the reducing agent. Deposit thickness, 1.5 μm. 5000× More
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Published: 01 January 1994
Fig. 4 Arrhenius plots of growth rates of polycrystalline silicon films deposited on oxidized silicon wafers with and without plasma enhancement. LPCVD, low-pressure chemical deposition; PECVD, plasma-enhanced chemical vapor deposition. Source: Ref 41 More
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Published: 31 December 2017
Fig. 20 Friction coefficient for WS 2 film grown using atomic layer deposition in the as-deposited condition (a), and after annealing for 1 h at 500 °C, or 930 °F (b), compared with that for RF-sputtered WS 2 film (c). Source: Ref 83 More
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001286
EISBN: 978-1-62708-170-2
... Abstract This article describes eight stages of the atomistic film growth: vaporization of the material, transport of the material to the substrate, condensation and nucleation of the atoms, nuclei growth, interface formation, film growth, changes in structure during the deposition...
Series: ASM Handbook
Volume: 18
Publisher: ASM International
Published: 31 December 2017
DOI: 10.31399/asm.hb.v18.a0006360
EISBN: 978-1-62708-192-4
...-containing hydrogenated amorphous carbon films, deposition of tetrahedral amorphous carbon films, and deposition of silicon-incorporated hydrogenated amorphous carbon films. The most common deposition technologies for diamond films are also discussed. The article provides information on surface preparation...
Series: ASM Handbook
Volume: 9
Publisher: ASM International
Published: 01 December 2004
DOI: 10.31399/asm.hb.v09.a0003749
EISBN: 978-1-62708-177-1
... and describes several methods for film formation, namely, heat tinting, color etching, anodizing, potentiostatic etching, vapor deposition, and film deposition by sputtering. It provides information on the general procedures and precautions for etchants and reagents used in metallographic microetching...
Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0001113
EISBN: 978-1-62708-162-7
... Abstract This article focuses on different thin-film deposition techniques used to make superconducting films and discusses the properties and advantages of high-critical-temperature and low-critical-temperature materials in a number of applications, including signal processing and analog...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001285
EISBN: 978-1-62708-170-2
... Abstract This article discusses the application of amorphous and crystalline films through plasma-enhanced chemical vapor deposition (PECVD) from the view point of microelectronic device fabrication. It describes the various types of PECVD reactors and deposition techniques. Plasma enhancement...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001319
EISBN: 978-1-62708-170-2
... on contamination removal, plasma surface modification, plasma-induced grafting, and plasma film deposition. contamination removal plasma discharge reactions plasma film deposition plasma processing equipment plasma surface modification plasma-induced grafting plastic plasma treatment plastics surface...
Series: ASM Handbook
Volume: 9
Publisher: ASM International
Published: 01 December 2004
DOI: 10.31399/asm.hb.v09.a0003744
EISBN: 978-1-62708-177-1
... Abstract This article describes the mechanisms involved in creating texture for various metal-fabrication processes, namely, solidification, deformation, recrystallization and grain growth, thin-film deposition, and imposition of external magnetic fields. It discusses two experimental...
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Published: 01 January 1994
Fig. 4 Structure-zone model for sputter-deposited films ( Ref 33 ) More
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Published: 01 January 1994
Fig. 6 Picture of a “nodule” in a thick sputter-deposited chromium film More
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Published: 01 January 1994
Fig. 7 The Del / Psi trajectory when a film of tungsten is deposited onto silicon. The small dots are at 1 nm intervals. The large dots are at 5 nm intervals from zero thickness. Source: Ref 8 More
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Published: 01 December 2004
Fig. 17 Typical arrangement for vacuum deposition of interference films. The arrow indicates the tungsten wire basket filled with material for evaporation. More
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Published: 01 December 2004
Fig. 21 Gas-discharge methods for deposition of interference films (a) and (b) and physical etching (c) and (d) by ion bombardment. (a) Reactive sputtering. (b) Cathodic discharge or sputtering. (c) Cathodic ion etching. (d) Ion etching. Source: adapted from Ref 1 More
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Published: 30 September 2015
Fig. 6 A hazy deposit on the surface of the paint film resembling the bloom on a grape, resulting in a loss of gloss and a dulling of color More
Book Chapter

By Donald M. Mattox
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001289
EISBN: 978-1-62708-170-2
... Abstract This article begins with a list of the factors that influence the properties of physical vapor deposited films. It describes the steps involved in ion plating, namely, surface preparation, nucleation, interface formation, and film growth. The article discusses the factors influencing...
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Published: 31 December 2017
Fig. 35 Effect of Ni and Fe additions and substrate temperature on hardness of Al 2 O 3 thin films deposited using pulsed laser deposition. Source: Ref 163 More