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epitaxy oxide layers
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Series: ASM Handbook
Volume: 13A
Publisher: ASM International
Published: 01 January 2003
DOI: 10.31399/asm.hb.v13a.a0003589
EISBN: 978-1-62708-182-5
... of amorphous and epitaxy oxide layers and presents equations for various oxidation reaction rates. The article reviews different theories to describe the oxidation mechanism. These include the Cabrera-Mott, Hauffe-IIschner, Grimley-Trapnell, Uhlig, and Wagner theories. Schottky defect Frenkel defect...
Abstract
This article describes the Schottky defect and the Frenkel defect in oxides. It provides information on the p-type metal-deficit oxides and n-type semiconductor oxides. The article discusses diffusion mechanisms and laws of diffusion proposed by Fick. It explains the oxide texture of amorphous and epitaxy oxide layers and presents equations for various oxidation reaction rates. The article reviews different theories to describe the oxidation mechanism. These include the Cabrera-Mott, Hauffe-IIschner, Grimley-Trapnell, Uhlig, and Wagner theories.
Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0001091
EISBN: 978-1-62708-162-7
... by conventional means, and an epitaxial layer is added that contains rare earth oxides. These rare earth oxides provide magnetic domains, or bubbles, that can be oriented to store information and moved by an electric field for information readout. Memory devices can be made with silicon materials, bubbles...
Abstract
Gallium-base components can be found in a variety of products ranging from compact disk players to advanced military electronic warfare systems, owing to the factor that it can emit light, has a greater resistance to radiation and operates at faster speeds and higher temperatures. This article discusses the uses of gallium in optoelectronic devices and integrated circuits and applications of gallium. The article discusses the properties and grades of gallium arsenide and also provides information on resources of gallium. The article talks about the recovery techniques, including recovery from bauxite, zinc ore and secondary recovery process and purification. The article briefly describes the fabrication process of gallium arsenide crystals. Furthermore, the article gives a short note on world supply and demand of gallium and concludes with research and development on gallium arsenide integrated circuits.
Book Chapter
Chemical Vapor Deposition of Semiconductor Materials
Available to PurchaseBook: Surface Engineering
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001284
EISBN: 978-1-62708-170-2
... and technologies. Silicon epitaxial films are used routinely in the manufacture of high-performance bipolar and complementary metal-oxide semiconductor (CMOS) integrated circuits. The deposition of compound semiconductors with direct bandgaps has led to the production of millimeter and microwave devices, as well...
Abstract
This article describes the vapor-phase growth techniques applied to the epitaxial deposition of semiconductor films and discusses the fundamental processes involved in metal-organic chemical vapor deposition (MOCVD). It reviews the thermodynamics that determine the driving force behind the overall growth process and the kinetics that define the rates at which the various processes occur. The article provides information on the reactor systems and hardware, MOCVD starting materials, engineering considerations that optimize growth, and the growth parameters for a variety of Group III-V, II-VI, and IV semiconductors.
Book Chapter
Plasma-Enhanced Chemical Vapor Deposition
Available to PurchaseBook: Surface Engineering
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001285
EISBN: 978-1-62708-170-2
... that are commonly deposited using the PECVD process are noncrystalline materials such as oxides, nitrides, and oxynitrides of silicon ( Ref 1 ), and crystalline materials such as polycrystalline silicon ( Ref 2 , 3 , 4 ), epitaxial silicon ( Ref 5 , 6 , 7 ), and refractory metals and their silicides. All...
Abstract
This article discusses the application of amorphous and crystalline films through plasma-enhanced chemical vapor deposition (PECVD) from the view point of microelectronic device fabrication. It describes the various types of PECVD reactors and deposition techniques. Plasma enhancement of the CVD process is discussed briefly. The article also describes the properties of amorphous and crystalline films deposited by the PECVD process for integrated circuit fabrication.
Book Chapter
Semiconductor Characterization
Available to PurchaseSeries: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006670
EISBN: 978-1-62708-213-6
.... For this reason, there is a large degree of overlap in the characterization tools and strategies used for epitaxial films. Single-crystal wafer substrates also play a role in a variety of devices that may use other classes of semiconductor for their active layers. Other examples of thin films utilizing...
Abstract
This article introduces various techniques commonly used in the characterization of semiconductors, namely single-crystal, polycrystalline, amorphous, oxide, organic, and low-dimensional semiconductors and semiconductor devices. The discussion covers material classification, fabrication methods, sample preparation, bulk/elemental characterization methods, microstructural characterization methods, surface characterization methods, and electronic characterization methods.
Book Chapter
Growth and Growth-Related Properties of Films Formed by Physical Vapor Deposition
Available to PurchaseBook: Surface Engineering
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001286
EISBN: 978-1-62708-170-2
... from the bulk material by having surface layers of reacted and adsorbed material such as oxides and hydrocarbons. The surface chemistry, morphology, and mechanical properties of the real surface can be very important to the adhesion and film formation process. The underlying bulk material can...
Abstract
This article describes eight stages of the atomistic film growth: vaporization of the material, transport of the material to the substrate, condensation and nucleation of the atoms, nuclei growth, interface formation, film growth, changes in structure during the deposition, and postdeposition changes. It also discusses the effects and causes of growth-related properties of films deposited by physical vapor deposition processes, including residual film stress, density, and adhesion.
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006675
EISBN: 978-1-62708-213-6
... Abstract This article is an overview of the division Surface Analysis of this volume. The division covers various developed surface-analysis techniques, such as scanning probe and atomic force microscopy. The division focuses on the analysis of surface layers that are less than 100 nm...
Abstract
This article is an overview of the division Surface Analysis of this volume. The division covers various developed surface-analysis techniques, such as scanning probe and atomic force microscopy. The division focuses on the analysis of surface layers that are less than 100 nm. A quick reference summary of surface-analysis methods is presented in this article.
Series: ASM Handbook
Volume: 13A
Publisher: ASM International
Published: 01 January 2003
DOI: 10.31399/asm.hb.v13a.a0003590
EISBN: 978-1-62708-182-5
... corrosion THE CHARACTERISTICS AND BEHAVIOR of scale produced by various types of oxidation are examined in this article. The basic models, concepts, processes and open questions for high-temperature gaseous corrosion are presented. Properties of Scales Multiple Scale Layers A pure metal...
Abstract
This article examines the characteristics and behavior of scale produced by various types of oxidation. The basic models, concepts, processes, and open questions for high-temperature gaseous corrosion are presented. The article describes the development of geometrically induced growth stresses, transformation stresses, and thermal stresses in oxide scales. It discusses the ways in which stresses can be relieved. The article provides information on catastrophic oxidation, internal oxidation, sulfidation, alloy oxidation, selective oxidation, and concurrent oxidation. It illustrates the relationships between scale morphologies on binary alloys and concludes with a discussion on metal dusting and chlorine corrosion.
Series: ASM Handbook
Volume: 13A
Publisher: ASM International
Published: 01 January 2003
DOI: 10.31399/asm.hb.v13a.a0003681
EISBN: 978-1-62708-182-5
... processes in the oxide and the ability of the oxide to resist spalling and breakdown or abrasion and erosion. The ion implantation process has provided a means for studying and modifying the surface layers active in gaseous corrosion. Interesting results have been obtained with implanted materials...
Abstract
Surface modification is the alteration of the surface composition or structure using energy or particle beams. This article discusses two different surface modification methods. The first, ion implantation, is the introduction of ionized species into the substrate using kilovolt to megavolt ion accelerating potentials. The second method, laser processing, is high-power laser melting with or without mixing of materials precoated on the substrate, followed by rapid melt quenching. The article also describes the advantages and disadvantages of the surface modification approach to promote corrosion resistance.
Book Chapter
Vacuum Deposition, Reactive Evaporation, and Gas Evaporation
Available to PurchaseBook: Surface Engineering
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001287
EISBN: 978-1-62708-170-2
... by Auwarter in 1952 and Brinsmaid et al. in 1953. In 1971, Heitmann used reactive evaporation to deposit oxide films by evaporating the film material through a plasma of the reactive gas, and this technique is now generally called activated reactive evaporation. With this method, either a gas, such as oxygen...
Abstract
This article discusses the fundamentals of thermal vaporization and condensation and provides information on the various vaporization sources and methods of vacuum deposition. It offers an overview of reactive evaporation and its deposition techniques. The article also explains the advantages, limitations, and applications of vacuum deposition processes. Finally, it provides information on the gas evaporation process, its processing chamber, and related systems.
Book: Thermal Spray Technology
Series: ASM Handbook
Volume: 5A
Publisher: ASM International
Published: 01 August 2013
DOI: 10.31399/asm.hb.v05a.a0005707
EISBN: 978-1-62708-171-9
... products. The predominant chemical reaction products for metals exposed to air are oxides. The oxide layers generally are thin, and contact with an opposing surface can expose the underlying unoxidized metal. This newly exposed surface will have a strong tendency to adhere to the opposing surface...
Abstract
Coatings and other surface modifications are used for a variety of functional, economic, and aesthetic purposes. Two major applications of thermal spray coatings are for wear resistance and corrosion resistance. This article discusses thermal (surface hardening) and thermochemical (carburizing, nitriding, and boriding) surface modifications, electrochemical treatments (electroplating, and anodizing), chemical treatments (electroless plating, phosphating, and hot dip coating), hardfacing, and thermal spray processes. It provides information on chemical and physical vapor deposition techniques such as conventional CVD, laser-assisted CVD, cathodic arc deposition, molecular beam epitaxy, ion plating, and sputtering.
Series: ASM Handbook
Volume: 13A
Publisher: ASM International
Published: 01 January 2003
DOI: 10.31399/asm.hb.v13a.a0003677
EISBN: 978-1-62708-182-5
... electrolytes ( Ref 6 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 ). Such oxidation leads to the formation of titanium-base oxides, hydrated complexes, or aqueous cationic species as a result of active anodic dissolution. The oxide and hydrated-complex layers function as barriers between the surrounding...
Abstract
This article provides a background of the complex relationship between titanium and its alloys with aqueous environments, which is dictated by the presence of a passivating oxide film. It describes the corrosion vulnerability of titanium and titanium oxides by the classification of oxide failure mechanisms. The mechanisms are spatially localized oxide film breakdown by the ingress of aggressive anions; spatially local or homogenous chemical dissolution of the oxide in a strong reducing-acid environment; and mechanical disruptions or depassivation such as scratching, abrading, or fretting. Titanium alloys can be classified into three primary groups such as titanium alloys with hexagonal close-packed crystallographic structure; beta titanium alloys with body-centered cubic crystallographic structures; and alpha + beta titanium alloys including near-alpha and near-beta titanium alloys. The article also illustrates the effects of alloying on active anodic corrosion of titanium and repassivation behavior of titanium and titanium-base alloys.
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006628
EISBN: 978-1-62708-213-6
.... Various steps involved in the sample preparation, calibration, and data analysis are then discussed. The article concludes with a section on the applications and interpretation of LEIS in material analysis, including discussion on surface structural analysis, layer-by-layer (Frank-van der Merwe) growth...
Abstract
This article is a brief account of low-energy ion-scattering spectroscopy (LEIS) for determining the atomic structure of solid surfaces. It begins with a description of the general principles of LEIS. This is followed by a section providing information on the equipment used for LEIS. Various steps involved in the sample preparation, calibration, and data analysis are then discussed. The article concludes with a section on the applications and interpretation of LEIS in material analysis, including discussion on surface structural analysis, layer-by-layer (Frank-van der Merwe) growth, and low-energy atom-scattering spectroscopy.
Book Chapter
Selection and Weldability of Dispersion-Strengthened Aluminum Alloys
Available to PurchaseSeries: ASM Handbook
Volume: 6
Publisher: ASM International
Published: 01 January 1993
DOI: 10.31399/asm.hb.v06.a0001419
EISBN: 978-1-62708-173-3
... mL/100 g of aluminum and therefore show an increased tendency to form fusion zone porosity. Depending on the specific RS processing technique employed to produce the dispersion-strengthened aluminum alloy, the surface of the rapidly solidified particulates forms oxide layers to varying degrees ( Ref...
Abstract
Conventional high-strength aluminum alloys produced via powder metallurgy (P/M) technologies, namely, rapid solidification (RS) and mechanical alloying (mechanical attrition) have high strength at room temperature and elevated temperature. This article focuses on the metallurgy and weldability of dispersion-strengthened aluminum alloys based on the aluminum-iron system that are produced using various RS-P/M processing techniques. It describes weldability issues related to weld solidification behavior, the formation of hydrogen-induced porosity in the weld zone, and the high-temperature deformation behavior of these alloys, which affect the selection and application of fusion and solid-state welding processes. The article provides specific examples of material responses to welding conditions and highlights the microstructural development in the weld zone.
Series: ASM Handbook Archive
Volume: 10
Publisher: ASM International
Published: 01 January 1986
DOI: 10.31399/asm.hb.v10.a0001775
EISBN: 978-1-62708-178-8
... is in turn transformed, and the silicon-to-nickel ratio increases 2:1. This last layer grows epitaxially, that is, under preservation of the crystalline orientation of the substrate—a fact established using RBS by channeling, which is present only when the target is a single crystal. Impurity Profiles...
Abstract
Rutherford backscattering spectrometry (RBS) is a major materials characterization technique that can provide information in a short analysis time. It is used for quantitative compositional analysis of thin films, layered structures, or bulk materials and to measure surface impurities of heavy elements on substrates of lighter elements. This article focuses on RBS and its principles, such as collision kinematics, scattering cross section, and energy loss. It describes the channeling effect and the operation of the RBS equipment. The article also provides information on the applications of RBS.
Book Chapter
Additive Manufacturing of Copper and Copper Alloys
Available to PurchaseSeries: ASM Handbook
Volume: 24
Publisher: ASM International
Published: 15 June 2020
DOI: 10.31399/asm.hb.v24.a0006579
EISBN: 978-1-62708-290-7
... are remelted. The orientation of the previous layer can serve as a seed for the next layer being deposited, resulting in epitaxial growth and long columnar grains that result in a strong texture along the build orientation and inherent anisotropy. Moreover, localized heating may result in the depletion...
Abstract
This article is a detailed account of additive manufacturing (AM) processes for copper and copper alloys such as copper-chromium alloys, GRCop, oxide-dispersion-strengthened copper, copper-nickel alloys, copper-tin alloys, copper-zinc alloys, and copper-base shape memory alloys. The AM processes include binder jetting, ultrasonic additive manufacturing, directed-energy deposition, laser powder-bed fusion, and electron beam powder-bed fusion. The article presents a review of the literature and state of the art for copper alloy AM and features data on AM processes and industrial practices, copper alloys used, selected applications, material properties, and where applicable, compares these data and properties to traditionally processed materials. The data presented and the surrounding discussion focus on bulk metallurgical processing of copper components. The discussion covers the composition and performance criteria for copper alloys that have been reported for AM and discusses key differences in process-structure-property relationships compared to conventionally processed material. The article also provides information on feedstock considerations for copper powder handling.
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006655
EISBN: 978-1-62708-213-6
... on surfaces, and they influence the adsorption properties, electronic structure, and growth of adsorbate layers. SPA-LEED has been used extensively to analyze semiconductor surfaces, including studies on the growth modes of epitaxial layers on semiconductor surfaces, defects in silicon surfaces, oxides...
Abstract
Low-energy electron diffraction (LEED) is a technique for investigating the crystallography of surfaces and overlayers adsorbed on surfaces. This article provides a brief account of LEED, covering the principles and measurements of diffraction from surfaces. Some of the processes involved in sample preparation are described. In addition, the article discusses the limitations of surface-sensitive electron diffraction and the applications of LEED with examples.
Book Chapter
Deformation Processes in Additive Manufacturing
Available to PurchaseSeries: ASM Handbook
Volume: 24
Publisher: ASM International
Published: 15 June 2020
DOI: 10.31399/asm.hb.v24.a0006572
EISBN: 978-1-62708-290-7
... temperature of the material. This allows DAM processes to avoid the large volume change that occurs during solidification, as well as avoiding the epitaxial microstructures created by the layered solidification in many SAM processes. In line with the use of DAM to avoid undesired shape changes and residual...
Abstract
The majority of currently used additive manufacturing (AM) processes are solidification based (SAM). Another class of AM processes consists of those that rely on deformation (DAM) to place material instead of solidification. Although SAM processes are much more widely used, as research and development continues in DAM processes, they are becoming increasingly attractive, especially for the AM of metals. This article discusses some of the more widely used DAM processes, namely ultrasonic additive manufacturing, cold spray process, and friction stir welding, focusing on their applications, advantages, and limitations.
Book: Surface Engineering
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001294
EISBN: 978-1-62708-170-2
... for the growth of high-quality multicomponent oxide thin films ( Ref 1 , 2 , 3 ). Conceptually, PLD is an extremely simple PVD technique. The output of a short laser pulse (10 to 30 ns) is focused onto a solid target. The laser rapidly raises the surface temperature of a small portion of the target well beyond...
Abstract
This article presents a general description of pulsed-laser deposition. It describes the components of pulsed-laser deposition equipment. The article also discusses the effects of angular distribution of materials. Finally, the article reviews the characteristics of high-temperature superconductors and ferroelectric materials.
Series: ASM Handbook
Volume: 13A
Publisher: ASM International
Published: 01 January 2003
DOI: 10.31399/asm.hb.v13a.a0003671
EISBN: 978-1-62708-182-5
... the best fit, but not a perfect fit, between the oxide or scale and the substrate crystal structures. Additional Aspects of Scale Growth Stress develops in an epitaxial scale layer as it grows, due to the slight misfit between the scale and metal crystals. The stress is likely to produce dislocation...
Abstract
This article provides information on the thermodynamics and kinetics of high-temperature corrosion. The thermodynamics of high-temperature corrosion reactions reveals what reactions are possible under certain conditions and kinetics explains how fast these possible reactions will proceed. The article describes the diffusion process that plays a key role in oxidation and other gaseous reactions with metals. It discusses the development of stress in oxide layers. The article presents the sample preparation methods for high-temperature testing, and expounds the measurement methods of high-temperature degradation. It reviews a number of potential processes, which are responsible for high-temperature corrosion. The article details a wide range of coatings and coating processes for protecting components in a variety of operating conditions. It also discusses the testing methods used for materials at high temperatures, including furnace tests, burner rig testing, and thermogravimetric analysis, and the test methods conducted at high temperature and high pressure.
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