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epitaxial deposition

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Published: 01 January 1994
Fig. 5 Reactor for plasma-enhanced chemical vapor deposition of epitaxial silicon films. QMS, quadruple mass spectrometer. Source: Ref 48 More
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001284
EISBN: 978-1-62708-170-2
... Abstract This article describes the vapor-phase growth techniques applied to the epitaxial deposition of semiconductor films and discusses the fundamental processes involved in metal-organic chemical vapor deposition (MOCVD). It reviews the thermodynamics that determine the driving force behind...
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Published: 31 October 2011
Fig. 10 Illustration of the epitaxial growth of columnar grains of the weld deposit from the fusion line of a stainless steel weld. After Honeycombe and Gooch, reprinted from Ref 5 More
Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0001091
EISBN: 978-1-62708-162-7
... application of optoelectronic GaAs is in night vision equipment. The GaAs component converts infrared radiation to visible light, enabling soldiers to see at night. Four layers of GaAlAs are epitaxially deposited on a GaAs substrate. The substrate and two of the layers are removed, yielding a thin GaAlAs film...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001285
EISBN: 978-1-62708-170-2
... that are commonly deposited using the PECVD process are noncrystalline materials such as oxides, nitrides, and oxynitrides of silicon ( Ref 1 ), and crystalline materials such as polycrystalline silicon ( Ref 2 , 3 , 4 ), epitaxial silicon ( Ref 5 , 6 , 7 ), and refractory metals and their silicides. All...
Series: ASM Handbook
Volume: 5A
Publisher: ASM International
Published: 01 August 2013
DOI: 10.31399/asm.hb.v05a.a0005707
EISBN: 978-1-62708-171-9
... techniques such as conventional CVD, laser-assisted CVD, cathodic arc deposition, molecular beam epitaxy, ion plating, and sputtering. anodizing case hardening chemical vapor deposition corrosion electroplating hardfacing hot dip coating ion implantation ion plating physical vapor deposition...
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Published: 01 December 2009
Fig. 2 Flow regimes in physical vapor deposition (PVD) and chemical vapor deposition (CVD) versus Knudsen number (Kn). FB-CVD, fluidized-bed CVD; LPCVD, low-pressure CVD; UHVCVD, ultrahigh-vacuum CVD; MBE, molecular beam epitaxy More
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001286
EISBN: 978-1-62708-170-2
... of a series of closely spaced steps. These steps aid in dense nucleation for epitaxial growth of GaAs on Si and Al x Ga 1- x As on GaAs. Scratches on the substrate surface provide nucleation sites in the deposition of diamond films. Lattice defects can act as preferential nucleation sites. For example...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001287
EISBN: 978-1-62708-170-2
... environment and knowing the rate of material escaping, the equilibrium vapor pressure in the container can be calculated. The vapor pressures of the elements have been presented in tabular and graphical form ( Ref 3 ). The Knudsen cell is often used as a source for molecular beam epitaxy, where the deposition...
Series: ASM Handbook
Volume: 4C
Publisher: ASM International
Published: 09 June 2014
DOI: 10.31399/asm.hb.v04c.a0005834
EISBN: 978-1-62708-167-2
... heating. Zone refining, zone leveling, doping, and epitaxial deposition of semiconductor materials also make use of the induction process. Tin Reflow Electrolytically deposited tin coatings on steel sheet have a dull, matte, nonuniform finish. Heating of the sheet to 230 °C (450 °F) by induction...
Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0001114
EISBN: 978-1-62708-162-7
....) to a few μm are typical for the vapor deposition methods. The critical current densities observed for thin films of the oxide superconductor have shown the highest values reported to date for high- T c materials. These thin films, however, are highly idealized in that the film is of epitaxial grade...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006670
EISBN: 978-1-62708-213-6
... of semiconducting materials that are available only in the form of thin films grown on the surface of single-crystal wafers. For a few specific classes of materials and deposition techniques, these thin films can be grown epitaxially on the surface of a single-crystal substrate, meaning that the atoms align...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001260
EISBN: 978-1-62708-170-2
... . The technique, called electrochemical atomic layer epitaxy (ECALE), takes advantage of the underpotential deposition (UPD) phenomenon that occurs when the first monolayer (or partial monolayer) of a surface film is formed. The energetics of the first atomic layer of a deposit is often favorable compared to bulk...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0005586
EISBN: 978-1-62708-170-2
... computer numerical control cP centipoise CSOM confocal scanning optical microscope cSt centistokes CTE coefficient of thermal expansion CVD chemical vapor deposition CVI chemical vapor infiltration CVN Charpy V-notch (impact test or specimen) cw...
Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0005549
EISBN: 978-1-62708-162-7
... omega vol volume function of temperature vol% volume percent friction coefficient; magnetic Tradenames VPE vapor-phase epitaxy VPSD vacuum plasma structural permeability AF-56 is a registered tradename of Allison F microfarads Gas Turbine, Division of General Motors deposition in. microinch Corporation...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006628
EISBN: 978-1-62708-213-6
... an incidence perpendicular to the sample surface. The time required for a complete sample scan is usually 1.5 h at a dose of ~3 × 10 13 cm 2 , which provides sufficiently low coverage to avoid radiation damage from the primary beam. The metal deposition rate on a sample surface is approximately 1.0 monolayer...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001290
EISBN: 978-1-62708-170-2
... Advantages and limitations of ion-beam-assisted deposition Advantages, achievable benefits Low deposition temperature High adhesion Control of stress level Bulk density achievable Control of microstructure (nanocrystalline; metastable crystalline or amorphous; textured; and epitaxial...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001294
EISBN: 978-1-62708-170-2
.... Materials PLD is currently being used to deposit thin films for a wide range of technological applications. These films vary from epitaxial superlattices of electronic materials to polycrystalline bioceramics. Several recent review articles have attempted to catalog research efforts to date ( Ref 15...
Series: ASM Handbook
Volume: 9
Publisher: ASM International
Published: 01 December 2004
DOI: 10.31399/asm.hb.v09.a0003785
EISBN: 978-1-62708-177-1
... the weld deposit differs greatly in hardness from the substrate. In these cases, extra care and/or automatic grinding equipment are recommended. Final grinding and polishing should be performed as recommended for the alloy system(s) present in the joint. Special precautions apply to welds made...
Series: ASM Handbook
Volume: 24
Publisher: ASM International
Published: 15 June 2020
DOI: 10.31399/asm.hb.v24.a0006581
EISBN: 978-1-62708-290-7
... microstructural banding, that is, microstructural differences between deposition layers ( Ref 32 – 35 ). For Ti-6Al-4V, Vilaro et al. reported large columnar grains 150 μm wide; remelting resulted in a strong texture as a result of epitaxial growth nucleating on columnar grain sites. A strong anisotropy...