Skip Nav Destination
Close Modal
Search Results for
epitaxial deposition
Update search
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
NARROW
Format
Topics
Book Series
Date
Availability
1-20 of 81 Search Results for
epitaxial deposition
Follow your search
Access your saved searches in your account
Would you like to receive an alert when new items match your search?
Sort by
Book: Surface Engineering
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001284
EISBN: 978-1-62708-170-2
...Abstract Abstract This article describes the vapor-phase growth techniques applied to the epitaxial deposition of semiconductor films and discusses the fundamental processes involved in metal-organic chemical vapor deposition (MOCVD). It reviews the thermodynamics that determine the driving...
Abstract
This article describes the vapor-phase growth techniques applied to the epitaxial deposition of semiconductor films and discusses the fundamental processes involved in metal-organic chemical vapor deposition (MOCVD). It reviews the thermodynamics that determine the driving force behind the overall growth process and the kinetics that define the rates at which the various processes occur. The article provides information on the reactor systems and hardware, MOCVD starting materials, engineering considerations that optimize growth, and the growth parameters for a variety of Group III-V, II-VI, and IV semiconductors.
Book: Thermal Spray Technology
Series: ASM Handbook
Volume: 5A
Publisher: ASM International
Published: 01 August 2013
DOI: 10.31399/asm.hb.v05a.a0005707
EISBN: 978-1-62708-171-9
..., and anodizing), chemical treatments (electroless plating, phosphating, and hot dip coating), hardfacing, and thermal spray processes. It provides information on chemical and physical vapor deposition techniques such as conventional CVD, laser-assisted CVD, cathodic arc deposition, molecular beam epitaxy, ion...
Abstract
Coatings and other surface modifications are used for a variety of functional, economic, and aesthetic purposes. Two major applications of thermal spray coatings are for wear resistance and corrosion resistance. This article discusses thermal (surface hardening) and thermochemical (carburizing, nitriding, and boriding) surface modifications, electrochemical treatments (electroplating, and anodizing), chemical treatments (electroless plating, phosphating, and hot dip coating), hardfacing, and thermal spray processes. It provides information on chemical and physical vapor deposition techniques such as conventional CVD, laser-assisted CVD, cathodic arc deposition, molecular beam epitaxy, ion plating, and sputtering.
Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0001091
EISBN: 978-1-62708-162-7
... arsenide can be deposited by MOCVD or MBE over the entire silicon wafer, a method called blanket epitaxy, or islands of GaAs can be epitaxially deposited on the silicon wafer, a method called selective epitaxy. Wafers produced by blanket epitaxy could replace bulk GaAs wafers for GaAs MMICs and digital ICs...
Abstract
Gallium-base components can be found in a variety of products ranging from compact disk players to advanced military electronic warfare systems, owing to the factor that it can emit light, has a greater resistance to radiation and operates at faster speeds and higher temperatures. This article discusses the uses of gallium in optoelectronic devices and integrated circuits and applications of gallium. The article discusses the properties and grades of gallium arsenide and also provides information on resources of gallium. The article talks about the recovery techniques, including recovery from bauxite, zinc ore and secondary recovery process and purification. The article briefly describes the fabrication process of gallium arsenide crystals. Furthermore, the article gives a short note on world supply and demand of gallium and concludes with research and development on gallium arsenide integrated circuits.
Book: Surface Engineering
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001285
EISBN: 978-1-62708-170-2
.... Examples of films that are commonly deposited using the PECVD process are noncrystalline materials such as oxides, nitrides, and oxynitrides of silicon ( Ref 1 ), and crystalline materials such as polycrystalline silicon ( Ref 2 , 3 , 4 ), epitaxial silicon ( Ref 5 , 6 , 7 ), and refractory metals...
Abstract
This article discusses the application of amorphous and crystalline films through plasma-enhanced chemical vapor deposition (PECVD) from the view point of microelectronic device fabrication. It describes the various types of PECVD reactors and deposition techniques. Plasma enhancement of the CVD process is discussed briefly. The article also describes the properties of amorphous and crystalline films deposited by the PECVD process for integrated circuit fabrication.
Book Chapter
Series: ASM Handbook
Volume: 4C
Publisher: ASM International
Published: 09 June 2014
DOI: 10.31399/asm.hb.v04c.a0005834
EISBN: 978-1-62708-167-2
... bonding. Metal-to-nonmetal seals, widely used in vacuum devices, also rely heavily on induction heating. The growing of single crystals of germanium and silicon often relies on induction heating. Zone refining, zone leveling, doping, and epitaxial deposition of semiconductor materials also make use...
Abstract
Electromagnetic induction is a way to heat electrically conductive materials such as metals. This article provides a brief history of electromagnetic induction and the development of induction heating technology. It explores various applications such as heating prior to metalworking, heat treating, melting, joining (welding, brazing/soldering, and shrink fitting), coating, paint curing, adhesive bonding, and zone refining of semiconductors. The article also discusses the advantages of induction heating.
Book: Surface Engineering
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001286
EISBN: 978-1-62708-170-2
... of a series of closely spaced steps. These steps aid in dense nucleation for epitaxial growth of GaAs on Si and Al x Ga 1- x As on GaAs. Scratches on the substrate surface provide nucleation sites in the deposition of diamond films. Lattice defects can act as preferential nucleation sites. For example...
Abstract
This article describes eight stages of the atomistic film growth: vaporization of the material, transport of the material to the substrate, condensation and nucleation of the atoms, nuclei growth, interface formation, film growth, changes in structure during the deposition, and postdeposition changes. It also discusses the effects and causes of growth-related properties of films deposited by physical vapor deposition processes, including residual film stress, density, and adhesion.
Book: Surface Engineering
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001287
EISBN: 978-1-62708-170-2
... for molecular beam epitaxy, where the deposition rate can be carefully controlled by controlling the temperature of the source ( Ref 4 ) or by mechanically interrupting the beam ( Ref 5 ). Figure 2(a) and 2(b) shows the vapor pressure of selected materials as a function of temperature. Note...
Abstract
This article discusses the fundamentals of thermal vaporization and condensation and provides information on the various vaporization sources and methods of vacuum deposition. It offers an overview of reactive evaporation and its deposition techniques. The article also explains the advantages, limitations, and applications of vacuum deposition processes. Finally, it provides information on the gas evaporation process, its processing chamber, and related systems.
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006670
EISBN: 978-1-62708-213-6
... chloride gas or a metal organic liquid precursor vapor and group V hydride gases in the case of vapor phase epitaxy and metal organic chemical vapor deposition. A discussion of semiconductor processing would be incomplete without reference to how these materials are used to form electronic devices...
Abstract
This article introduces various techniques commonly used in the characterization of semiconductors, namely single-crystal, polycrystalline, amorphous, oxide, organic, and low-dimensional semiconductors and semiconductor devices. The discussion covers material classification, fabrication methods, sample preparation, bulk/elemental characterization methods, microstructural characterization methods, surface characterization methods, and electronic characterization methods.
Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0001114
EISBN: 978-1-62708-162-7
... current density for vapor deposited (VD) tapes or wires on a metallic substrate is considerably degraded compared to the epitaxial films. Prototype VD tapes produced to date typically show 10 3 to 10 4 A/cm 2 at 77 K and zero field, which is a direct result of their polycrystalline nature ( Ref 12...
Abstract
The discovery of the high-critical-temperature oxide superconductors has accelerated the interest for superconducting applications due to its higher-temperature operation at liquid nitrogen or above and thus reduces the refrigeration and liquid helium requirement. It also permits usage of the high-critical-temperature oxides in magnets or power applications in high-current-carrying wire or tape with acceptable mechanical capability. This article discusses the powder techniques mainly based on the production of an oxide powder precursor, which is then subjected to various processing, including powder-in-tube processing, vapor deposition processing, and melt processing. It further discusses the microstructural, anisotropy and weak link influences on these processes.
Book: Surface Engineering
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0005586
EISBN: 978-1-62708-170-2
... computer numerical control cP centipoise CSOM confocal scanning optical microscope cSt centistokes CTE coefficient of thermal expansion CVD chemical vapor deposition CVI chemical vapor infiltration CVN Charpy V-notch (impact test or specimen) cw...
Book: Surface Engineering
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001260
EISBN: 978-1-62708-170-2
... . The technique, called electrochemical atomic layer epitaxy (ECALE), takes advantage of the underpotential deposition (UPD) phenomenon that occurs when the first monolayer (or partial monolayer) of a surface film is formed. The energetics of the first atomic layer of a deposit is often favorable compared to bulk...
Abstract
Multiple-layer alloy electrodeposition involves the formation of an inhomogeneous alloy consisting of lamellae of different composition. This article reviews the process description, engineering parameters, characterization, and applications of multiple-layer alloys. Pulsed-current plating and pulsed-potential plating are also discussed.
Book Chapter
Series: ASM Handbook
Volume: 9
Publisher: ASM International
Published: 01 December 2004
DOI: 10.31399/asm.hb.v09.a0003785
EISBN: 978-1-62708-177-1
... hardness are joined or when the weld deposit differs greatly in hardness from the substrate. In these cases, extra care and/or automatic grinding equipment are recommended. Final grinding and polishing should be performed as recommended for the alloy system(s) present in the joint. Special precautions...
Abstract
This article provides a review of metallographic procedures and techniques for analyzing the microstructure of fusion welded joints. It discusses sample preparation, the use of backing plates, and common sectioning methods. It identifies the various types of defects that can occur in arc welded metals, organizing them according to the sectioning method by which they are observed. It describes the relationship between weld bead morphology and sectioning direction and its effect on measurement error. The article examines micrographs from stainless steel, aluminum, and titanium alloy joints, highlighting important details such as solidification and solid-state transformation structures and what they reveal about the welding process. Besides arc welding, it also discusses laser and electron beam welding methods, resistance and spot welding, and the welding of dissimilar metals.
Series: ASM Handbook
Volume: 13A
Publisher: ASM International
Published: 01 January 2003
DOI: 10.31399/asm.hb.v13a.a0003681
EISBN: 978-1-62708-182-5
... from the target to a substrate; the sputtered material arrives at the substrate with enough energy to promote good adhesion of the coating to substrate. Ion beam mixing: Deposited layers (electroplating, sputtering) tens or hundreds of nanometers thick are mixed and bonded to the substrate...
Abstract
Surface modification is the alteration of the surface composition or structure using energy or particle beams. This article discusses two different surface modification methods. The first, ion implantation, is the introduction of ionized species into the substrate using kilovolt to megavolt ion accelerating potentials. The second method, laser processing, is high-power laser melting with or without mixing of materials precoated on the substrate, followed by rapid melt quenching. The article also describes the advantages and disadvantages of the surface modification approach to promote corrosion resistance.
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006628
EISBN: 978-1-62708-213-6
... of the shadow cone created by the first atom A is on the center of the second atom B. The number of backscattered ions increases due to the focusing effects at a critical angle of αcr . Fig. 10 Time-flight-spectra at Pt(111) substrate temperature of 300 K during Pd deposition Fig. 11...
Abstract
This article is a brief account of low-energy ion-scattering spectroscopy (LEIS) for determining the atomic structure of solid surfaces. It begins with a description of the general principles of LEIS. This is followed by a section providing information on the equipment used for LEIS. Various steps involved in the sample preparation, calibration, and data analysis are then discussed. The article concludes with a section on the applications and interpretation of LEIS in material analysis, including discussion on surface structural analysis, layer-by-layer (Frank-van der Merwe) growth, and low-energy atom-scattering spectroscopy.
Book: Surface Engineering
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001290
EISBN: 978-1-62708-170-2
... Advantages and limitations of ion-beam-assisted deposition Advantages, achievable benefits Low deposition temperature High adhesion Control of stress level Bulk density achievable Control of microstructure (nanocrystalline; metastable crystalline or amorphous; textured; and epitaxial...
Abstract
Ion-beam-assisted deposition (IBAD) refers to the process wherein evaporated atoms produced by physical vapor deposition are simultaneously struck by an independently generated flux of ions. This article discusses the energy utilization of this process. It describes the physical and chemical processes occurring at the film-vacuum interface during IBAD and dual-ion-beam sputtering with illustrations. The article also reviews the methods used for large-area, high-volume implementation of IBAD and the modes of film formation for IBAD. It contains a table that presents information on deposition and synthesis of inorganic compounds by IBAD and concludes with a discussion on the improved coating properties, advantages, limitations, and applications of IBAD.
Series: ASM Handbook
Volume: 22A
Publisher: ASM International
Published: 01 December 2009
DOI: 10.31399/asm.hb.v22a.a0005434
EISBN: 978-1-62708-196-2
... equations. It describes the modeling of vapor-surface interactions and kinetics of hetereogeneous processes as well as the modeling and kinetics of homogenous reactions in chemical vapor deposition (CVD). The article provides information on the various stages of developing models for numerical simulation...
Abstract
This article focuses on transport phenomena and modeling approaches that are specific to vapor-phase processes (VPP). It discusses the VPP for the synthesis of materials. The article reviews the basic notions of molecular collisions and gas flows, and presents transport equations. It describes the modeling of vapor-surface interactions and kinetics of hetereogeneous processes as well as the modeling and kinetics of homogenous reactions in chemical vapor deposition (CVD). The article provides information on the various stages of developing models for numerical simulation of the transport phenomena in continuous media and transition regime flows of VPP. It explains the methods used for molecular modeling in computational materials science. The article also presents examples that illustrate multiscale simulations of CVD or PVD processes and examples that focus on sputtering deposition and reactive or ion beam etching.
Book: Surface Engineering
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001294
EISBN: 978-1-62708-170-2
... not seem to affect the properties of YBCO films. Materials PLD is currently being used to deposit thin films for a wide range of technological applications. These films vary from epitaxial superlattices of electronic materials to polycrystalline bioceramics. Several recent review articles have...
Abstract
This article presents a general description of pulsed-laser deposition. It describes the components of pulsed-laser deposition equipment. The article also discusses the effects of angular distribution of materials. Finally, the article reviews the characteristics of high-temperature superconductors and ferroelectric materials.
Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0001090
EISBN: 978-1-62708-162-7
... as substrates for the epitaxial deposition of gallium arsenide (GaAs) or gallium arsenide phosphide (GaAsP) for use as light-emitting diodes or solar cells. These substrates take the place of more expensive gallium arsenide wafers. Many metric tons of germanium were consumed in the mid-1970s for the production...
Abstract
Germanium is a semiconducting metalloid element found in Group IV A. Germanium is used in the field of electronics, infrared optics, and in the fields of gamma ray spectroscopy, catalysis, and fiber optics. This article discusses the sources, manufacturing, and processing of germanium, and focuses on the chemical properties of various germanium compounds, including germanium halides, germanates, germanides, germanes, inorganic, and organogermanium compounds. It also tabulates the physical, thermal, electronic, and optical properties of germanium, and explains the economical aspects and specifications of germanium. The article describes the analytical and test methods of germanium, including gravimetric method, titrimetric method, and spectral method. It provides a short note on toxicology, and concludes with the uses of germanium in different fields.
Series: ASM Handbook
Volume: 6
Publisher: ASM International
Published: 01 January 1993
DOI: 10.31399/asm.hb.v06.a0001419
EISBN: 978-1-62708-173-3
... filler metal provided virtually porosity-free weld deposits following the vacuum pretreatment of the base alloy. Transverse weld tensile testing of the gas-tungsten arc welds produced using the ER5356 filler wire additions and vacuum pretreatment showed the joint efficiency to increase from 55% at room...
Abstract
Conventional high-strength aluminum alloys produced via powder metallurgy (P/M) technologies, namely, rapid solidification (RS) and mechanical alloying (mechanical attrition) have high strength at room temperature and elevated temperature. This article focuses on the metallurgy and weldability of dispersion-strengthened aluminum alloys based on the aluminum-iron system that are produced using various RS-P/M processing techniques. It describes weldability issues related to weld solidification behavior, the formation of hydrogen-induced porosity in the weld zone, and the high-temperature deformation behavior of these alloys, which affect the selection and application of fusion and solid-state welding processes. The article provides specific examples of material responses to welding conditions and highlights the microstructural development in the weld zone.
Book Chapter
Series: ASM Handbook
Volume: 24
Publisher: ASM International
Published: 15 June 2020
DOI: 10.31399/asm.hb.v24.a0006581
EISBN: 978-1-62708-290-7
... banding, that is, microstructural differences between deposition layers ( Ref 32 – 35 ). For Ti-6Al-4V, Vilaro et al. reported large columnar grains 150 μm wide; remelting resulted in a strong texture as a result of epitaxial growth nucleating on columnar grain sites. A strong anisotropy in fracture...
Abstract
Titanium alloys are known for their high-temperature strength, good fracture resistance, low specific gravity, and excellent resistance to corrosion. Ti-6Al-4V is the most commonly used titanium alloy in the aerospace, aircraft, automotive, and biomedical industries. This article discusses various additive manufacturing (AM) technologies for processing titanium and its alloys. These include directed-energy deposition (DED), powder-bed fusion (PBF), and sheet lamination. The discussion covers the effect of AM on the microstructures of the materials deposited, static and mechanical properties, and fatigue strength and fracture toughness of Ti-6Al-4V.