This article describes the vapor-phase growth techniques applied to the epitaxial deposition of semiconductor films and discusses the fundamental processes involved in metal-organic chemical vapor deposition (MOCVD). It reviews the thermodynamics that determine the driving force behind the overall growth process and the kinetics that define the rates at which the various processes occur. The article provides information on the reactor systems and hardware, MOCVD starting materials, engineering considerations that optimize growth, and the growth parameters for a variety of Group III-V, II-VI, and IV semiconductors.

This article discusses the application of amorphous and crystalline films through plasma-enhanced chemical vapor deposition (PECVD) from the view point of microelectronic device fabrication. It describes the various types of PECVD reactors and deposition techniques. Plasma enhancement of the CVD process is discussed briefly. The article also describes the properties of amorphous and crystalline films deposited by the PECVD process for integrated circuit fabrication.

This article describes eight stages of the atomistic film growth: vaporization of the material, transport of the material to the substrate, condensation and nucleation of the atoms, nuclei growth, interface formation, film growth, changes in structure during the deposition, and postdeposition changes. It also discusses the effects and causes of growth-related properties of films deposited by physical vapor deposition processes, including residual film stress, density, and adhesion.

This article discusses the fundamentals of thermal vaporization and condensation and provides information on the various vaporization sources and methods of vacuum deposition. It offers an overview of reactive evaporation and its deposition techniques. The article also explains the advantages, limitations, and applications of vacuum deposition processes. Finally, it provides information on the gas evaporation process, its processing chamber, and related systems.

Ion-beam-assisted deposition (IBAD) refers to the process wherein evaporated atoms produced by physical vapor deposition are simultaneously struck by an independently generated flux of ions. This article discusses the energy utilization of this process. It describes the physical and chemical processes occurring at the film-vacuum interface during IBAD and dual-ion-beam sputtering with illustrations. The article also reviews the methods used for large-area, high-volume implementation of IBAD and the modes of film formation for IBAD. It contains a table that presents information on deposition and synthesis of inorganic compounds by IBAD and concludes with a discussion on the improved coating properties, advantages, limitations, and applications of IBAD.

This article presents a general description of pulsed-laser deposition. It describes the components of pulsed-laser deposition equipment. The article also discusses the effects of angular distribution of materials. Finally, the article reviews the characteristics of high-temperature superconductors and ferroelectric materials.

This article presents the principles of chemical vapor deposition (CVD) with illustrations. It discusses the types of CVD processes, namely, thermal CVD, plasma CVD, laser CVD, closed-reactor CVD, chemical vapor infiltration, and metal-organic CVD. The article reviews the CVD reactions of materials related to hard, tribological, and high-temperature coatings and to free-standing structures. It concludes by reviewing the advantages, disadvantages, and applications of CVD.

This article focuses on transport phenomena and modeling approaches that are specific to vapor-phase processes (VPP). It discusses the VPP for the synthesis of materials. The article reviews the basic notions of molecular collisions and gas flows, and presents transport equations. It describes the modeling of vapor-surface interactions and kinetics of hetereogeneous processes as well as the modeling and kinetics of homogenous reactions in chemical vapor deposition (CVD). The article provides information on the various stages of developing models for numerical simulation of the transport phenomena in continuous media and transition regime flows of VPP. It explains the methods used for molecular modeling in computational materials science. The article also presents examples that illustrate multiscale simulations of CVD or PVD processes and examples that focus on sputtering deposition and reactive or ion beam etching.

This article illustrates the three techniques for producing glassy metals, namely, liquid phase quenching, atomic or molecular deposition, and external action technique. Devitrification of an amorphous alloy can proceed by several routes, including primary crystallization, eutectoid crystallization, and polymorphous crystallization. The article demonstrates a free-energy versus composition diagram that summarizes many of the devitrification routes. It provides a historical review of the corrosion behavior of fully amorphous and partially devitrified metallic glasses. The article describes the general corrosion behavior and localized corrosion behavior of transition metal-metal binary alloys, transition metal-metalloid alloys, and amorphous simple metal-transition metal-rare earth metal alloys. It concludes with a discussion on the environmentally induced fracture of glassy alloys, including hydrogen embrittlement and stress-corrosion cracking.

Sintering provides the interparticle bonding that generates the attractive forces needed to hold together the otherwise loose ceramic powder mass. It also improves hardness, strength, transparency, toughness, electrical conductivity, thermal expansion, magnetic saturation, corrosion resistance, and other properties. This article discusses the fundamentals of sintering and its effects on pore structures and particle density. It addresses some of the more common sintering methods, including solid-state, liquid-phase, and gas pressure sintering, and presents alternative processes such as reaction sintering and self-propagating, high-temperature synthesis. It also describes several pressure densification methods, including hot isostatic pressing, gas pressure sintering, molten particle deposition, and sol-gel processing. The article concludes with a section on grain growth that discusses the underlying mechanisms and kinetics and the relationship between grain growth and densification.

Multiple-layer alloy electrodeposition involves the formation of an inhomogeneous alloy consisting of lamellae of different composition. This article reviews the process description, engineering parameters, characterization, and applications of multiple-layer alloys. Pulsed-current plating and pulsed-potential plating are also discussed.

This article introduces various techniques commonly used in the characterization of semiconductors, namely single-crystal, polycrystalline, amorphous, oxide, organic, and low-dimensional semiconductors and semiconductor devices. The discussion covers material classification, fabrication methods, sample preparation, bulk/elemental characterization methods, microstructural characterization methods, surface characterization methods, and electronic characterization methods.

This article focuses on the evaluation of mechanical properties of freestanding films and films adherent to their substrates. Common methods of testing freestanding films, including uniaxial tensile testing, uniaxial creep testing, biaxial testing, and beam-bending methods, are discussed. For films which are adherent to their substrates, indentation testing is used to evaluate hardness, creep, and strength.

Low-energy electron diffraction (LEED) is a technique for investigating the crystallography of surfaces and overlayers adsorbed on surfaces. This article provides a brief account of LEED, covering the principles and measurements of diffraction from surfaces. Some of the processes involved in sample preparation are described. In addition, the article discusses the limitations of surface-sensitive electron diffraction and the applications of LEED with examples.

This article provides an overview of the types, properties, and applications of traditional and advanced ceramics and glasses. Principal product areas for traditional ceramics include whitewares, glazes, porcelain enamels, structural clay products, cements, and refractories. Advanced ceramics include electronic ceramics, optical ceramics, magnetic ceramics, and structural ceramics.

This article provides a detailed account of the basic concepts of Rutherford backscattering spectrometry (RBS). It begins with a description of the principles of RBS, as well as the effect of channeling in conjunction with backscattering measurements and the effect of energy loss under this condition. This is followed by a section on equipment used in RBS analysis. Channel-energy conversion, energy-depth conversion, and separation of the dechanneling background are then discussed as the main steps of RBS data analysis. The article also discusses the applications of RBS—including composition of bulk samples, thin-film composition and layer thickness, impurity profiles, damage depth profile, and surface peak—as well as the various codes developed to simulate it.

Coatings and thin films can be studied with surface analysis methods because their inherently small depth allows characterization of the surface composition, interface composition, and in-depth distribution of composition. This article describes principles and examples of common surface analysis methods, namely, Auger electron spectroscopy, X-ray photoelectron spectroscopy, ion scattering spectroscopy, secondary ion mass spectroscopy, and Rutherford backscattering spectroscopy. It also provides useful information on the applications of surface analysis.