This article describes the vapor-phase growth techniques applied to the epitaxial deposition of semiconductor films and discusses the fundamental processes involved in metal-organic chemical vapor deposition (MOCVD). It reviews the thermodynamics that determine the driving force behind the overall growth process and the kinetics that define the rates at which the various processes occur. The article provides information on the reactor systems and hardware, MOCVD starting materials, engineering considerations that optimize growth, and the growth parameters for a variety of Group III-V, II-VI, and IV semiconductors.

Coatings and other surface modifications are used for a variety of functional, economic, and aesthetic purposes. Two major applications of thermal spray coatings are for wear resistance and corrosion resistance. This article discusses thermal (surface hardening) and thermochemical (carburizing, nitriding, and boriding) surface modifications, electrochemical treatments (electroplating, and anodizing), chemical treatments (electroless plating, phosphating, and hot dip coating), hardfacing, and thermal spray processes. It provides information on chemical and physical vapor deposition techniques such as conventional CVD, laser-assisted CVD, cathodic arc deposition, molecular beam epitaxy, ion plating, and sputtering.

Gallium-base components can be found in a variety of products ranging from compact disk players to advanced military electronic warfare systems, owing to the factor that it can emit light, has a greater resistance to radiation and operates at faster speeds and higher temperatures. This article discusses the uses of gallium in optoelectronic devices and integrated circuits and applications of gallium. The article discusses the properties and grades of gallium arsenide and also provides information on resources of gallium. The article talks about the recovery techniques, including recovery from bauxite, zinc ore and secondary recovery process and purification. The article briefly describes the fabrication process of gallium arsenide crystals. Furthermore, the article gives a short note on world supply and demand of gallium and concludes with research and development on gallium arsenide integrated circuits.

This article discusses the application of amorphous and crystalline films through plasma-enhanced chemical vapor deposition (PECVD) from the view point of microelectronic device fabrication. It describes the various types of PECVD reactors and deposition techniques. Plasma enhancement of the CVD process is discussed briefly. The article also describes the properties of amorphous and crystalline films deposited by the PECVD process for integrated circuit fabrication.

Electromagnetic induction is a way to heat electrically conductive materials such as metals. This article provides a brief history of electromagnetic induction and the development of induction heating technology. It explores various applications such as heating prior to metalworking, heat treating, melting, joining (welding, brazing/soldering, and shrink fitting), coating, paint curing, adhesive bonding, and zone refining of semiconductors. The article also discusses the advantages of induction heating.

This article describes eight stages of the atomistic film growth: vaporization of the material, transport of the material to the substrate, condensation and nucleation of the atoms, nuclei growth, interface formation, film growth, changes in structure during the deposition, and postdeposition changes. It also discusses the effects and causes of growth-related properties of films deposited by physical vapor deposition processes, including residual film stress, density, and adhesion.

This article discusses the fundamentals of thermal vaporization and condensation and provides information on the various vaporization sources and methods of vacuum deposition. It offers an overview of reactive evaporation and its deposition techniques. The article also explains the advantages, limitations, and applications of vacuum deposition processes. Finally, it provides information on the gas evaporation process, its processing chamber, and related systems.

This article introduces various techniques commonly used in the characterization of semiconductors, namely single-crystal, polycrystalline, amorphous, oxide, organic, and low-dimensional semiconductors and semiconductor devices. The discussion covers material classification, fabrication methods, sample preparation, bulk/elemental characterization methods, microstructural characterization methods, surface characterization methods, and electronic characterization methods.

The discovery of the high-critical-temperature oxide superconductors has accelerated the interest for superconducting applications due to its higher-temperature operation at liquid nitrogen or above and thus reduces the refrigeration and liquid helium requirement. It also permits usage of the high-critical-temperature oxides in magnets or power applications in high-current-carrying wire or tape with acceptable mechanical capability. This article discusses the powder techniques mainly based on the production of an oxide powder precursor, which is then subjected to various processing, including powder-in-tube processing, vapor deposition processing, and melt processing. It further discusses the microstructural, anisotropy and weak link influences on these processes.

Multiple-layer alloy electrodeposition involves the formation of an inhomogeneous alloy consisting of lamellae of different composition. This article reviews the process description, engineering parameters, characterization, and applications of multiple-layer alloys. Pulsed-current plating and pulsed-potential plating are also discussed.

This article provides a review of metallographic procedures and techniques for analyzing the microstructure of fusion welded joints. It discusses sample preparation, the use of backing plates, and common sectioning methods. It identifies the various types of defects that can occur in arc welded metals, organizing them according to the sectioning method by which they are observed. It describes the relationship between weld bead morphology and sectioning direction and its effect on measurement error. The article examines micrographs from stainless steel, aluminum, and titanium alloy joints, highlighting important details such as solidification and solid-state transformation structures and what they reveal about the welding process. Besides arc welding, it also discusses laser and electron beam welding methods, resistance and spot welding, and the welding of dissimilar metals.

Surface modification is the alteration of the surface composition or structure using energy or particle beams. This article discusses two different surface modification methods. The first, ion implantation, is the introduction of ionized species into the substrate using kilovolt to megavolt ion accelerating potentials. The second method, laser processing, is high-power laser melting with or without mixing of materials precoated on the substrate, followed by rapid melt quenching. The article also describes the advantages and disadvantages of the surface modification approach to promote corrosion resistance.

This article is a brief account of low-energy ion-scattering spectroscopy (LEIS) for determining the atomic structure of solid surfaces. It begins with a description of the general principles of LEIS. This is followed by a section providing information on the equipment used for LEIS. Various steps involved in the sample preparation, calibration, and data analysis are then discussed. The article concludes with a section on the applications and interpretation of LEIS in material analysis, including discussion on surface structural analysis, layer-by-layer (Frank-van der Merwe) growth, and low-energy atom-scattering spectroscopy.

Ion-beam-assisted deposition (IBAD) refers to the process wherein evaporated atoms produced by physical vapor deposition are simultaneously struck by an independently generated flux of ions. This article discusses the energy utilization of this process. It describes the physical and chemical processes occurring at the film-vacuum interface during IBAD and dual-ion-beam sputtering with illustrations. The article also reviews the methods used for large-area, high-volume implementation of IBAD and the modes of film formation for IBAD. It contains a table that presents information on deposition and synthesis of inorganic compounds by IBAD and concludes with a discussion on the improved coating properties, advantages, limitations, and applications of IBAD.

This article focuses on transport phenomena and modeling approaches that are specific to vapor-phase processes (VPP). It discusses the VPP for the synthesis of materials. The article reviews the basic notions of molecular collisions and gas flows, and presents transport equations. It describes the modeling of vapor-surface interactions and kinetics of hetereogeneous processes as well as the modeling and kinetics of homogenous reactions in chemical vapor deposition (CVD). The article provides information on the various stages of developing models for numerical simulation of the transport phenomena in continuous media and transition regime flows of VPP. It explains the methods used for molecular modeling in computational materials science. The article also presents examples that illustrate multiscale simulations of CVD or PVD processes and examples that focus on sputtering deposition and reactive or ion beam etching.

This article presents a general description of pulsed-laser deposition. It describes the components of pulsed-laser deposition equipment. The article also discusses the effects of angular distribution of materials. Finally, the article reviews the characteristics of high-temperature superconductors and ferroelectric materials.

Germanium is a semiconducting metalloid element found in Group IV A. Germanium is used in the field of electronics, infrared optics, and in the fields of gamma ray spectroscopy, catalysis, and fiber optics. This article discusses the sources, manufacturing, and processing of germanium, and focuses on the chemical properties of various germanium compounds, including germanium halides, germanates, germanides, germanes, inorganic, and organogermanium compounds. It also tabulates the physical, thermal, electronic, and optical properties of germanium, and explains the economical aspects and specifications of germanium. The article describes the analytical and test methods of germanium, including gravimetric method, titrimetric method, and spectral method. It provides a short note on toxicology, and concludes with the uses of germanium in different fields.

Conventional high-strength aluminum alloys produced via powder metallurgy (P/M) technologies, namely, rapid solidification (RS) and mechanical alloying (mechanical attrition) have high strength at room temperature and elevated temperature. This article focuses on the metallurgy and weldability of dispersion-strengthened aluminum alloys based on the aluminum-iron system that are produced using various RS-P/M processing techniques. It describes weldability issues related to weld solidification behavior, the formation of hydrogen-induced porosity in the weld zone, and the high-temperature deformation behavior of these alloys, which affect the selection and application of fusion and solid-state welding processes. The article provides specific examples of material responses to welding conditions and highlights the microstructural development in the weld zone.

Titanium alloys are known for their high-temperature strength, good fracture resistance, low specific gravity, and excellent resistance to corrosion. Ti-6Al-4V is the most commonly used titanium alloy in the aerospace, aircraft, automotive, and biomedical industries. This article discusses various additive manufacturing (AM) technologies for processing titanium and its alloys. These include directed-energy deposition (DED), powder-bed fusion (PBF), and sheet lamination. The discussion covers the effect of AM on the microstructures of the materials deposited, static and mechanical properties, and fatigue strength and fracture toughness of Ti-6Al-4V.