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epitaxial deposition
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Image
Published: 01 January 1994
Fig. 5 Reactor for plasma-enhanced chemical vapor deposition of epitaxial silicon films. QMS, quadruple mass spectrometer. Source: Ref 48
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Book: Surface Engineering
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001284
EISBN: 978-1-62708-170-2
... Abstract This article describes the vapor-phase growth techniques applied to the epitaxial deposition of semiconductor films and discusses the fundamental processes involved in metal-organic chemical vapor deposition (MOCVD). It reviews the thermodynamics that determine the driving force behind...
Abstract
This article describes the vapor-phase growth techniques applied to the epitaxial deposition of semiconductor films and discusses the fundamental processes involved in metal-organic chemical vapor deposition (MOCVD). It reviews the thermodynamics that determine the driving force behind the overall growth process and the kinetics that define the rates at which the various processes occur. The article provides information on the reactor systems and hardware, MOCVD starting materials, engineering considerations that optimize growth, and the growth parameters for a variety of Group III-V, II-VI, and IV semiconductors.
Image
Published: 31 October 2011
Fig. 10 Illustration of the epitaxial growth of columnar grains of the weld deposit from the fusion line of a stainless steel weld. After Honeycombe and Gooch, reprinted from Ref 5
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Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0001091
EISBN: 978-1-62708-162-7
... application of optoelectronic GaAs is in night vision equipment. The GaAs component converts infrared radiation to visible light, enabling soldiers to see at night. Four layers of GaAlAs are epitaxially deposited on a GaAs substrate. The substrate and two of the layers are removed, yielding a thin GaAlAs film...
Abstract
Gallium-base components can be found in a variety of products ranging from compact disk players to advanced military electronic warfare systems, owing to the factor that it can emit light, has a greater resistance to radiation and operates at faster speeds and higher temperatures. This article discusses the uses of gallium in optoelectronic devices and integrated circuits and applications of gallium. The article discusses the properties and grades of gallium arsenide and also provides information on resources of gallium. The article talks about the recovery techniques, including recovery from bauxite, zinc ore and secondary recovery process and purification. The article briefly describes the fabrication process of gallium arsenide crystals. Furthermore, the article gives a short note on world supply and demand of gallium and concludes with research and development on gallium arsenide integrated circuits.
Book: Surface Engineering
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001285
EISBN: 978-1-62708-170-2
... that are commonly deposited using the PECVD process are noncrystalline materials such as oxides, nitrides, and oxynitrides of silicon ( Ref 1 ), and crystalline materials such as polycrystalline silicon ( Ref 2 , 3 , 4 ), epitaxial silicon ( Ref 5 , 6 , 7 ), and refractory metals and their silicides. All...
Abstract
This article discusses the application of amorphous and crystalline films through plasma-enhanced chemical vapor deposition (PECVD) from the view point of microelectronic device fabrication. It describes the various types of PECVD reactors and deposition techniques. Plasma enhancement of the CVD process is discussed briefly. The article also describes the properties of amorphous and crystalline films deposited by the PECVD process for integrated circuit fabrication.
Book: Thermal Spray Technology
Series: ASM Handbook
Volume: 5A
Publisher: ASM International
Published: 01 August 2013
DOI: 10.31399/asm.hb.v05a.a0005707
EISBN: 978-1-62708-171-9
... techniques such as conventional CVD, laser-assisted CVD, cathodic arc deposition, molecular beam epitaxy, ion plating, and sputtering. anodizing case hardening chemical vapor deposition corrosion electroplating hardfacing hot dip coating ion implantation ion plating physical vapor deposition...
Abstract
Coatings and other surface modifications are used for a variety of functional, economic, and aesthetic purposes. Two major applications of thermal spray coatings are for wear resistance and corrosion resistance. This article discusses thermal (surface hardening) and thermochemical (carburizing, nitriding, and boriding) surface modifications, electrochemical treatments (electroplating, and anodizing), chemical treatments (electroless plating, phosphating, and hot dip coating), hardfacing, and thermal spray processes. It provides information on chemical and physical vapor deposition techniques such as conventional CVD, laser-assisted CVD, cathodic arc deposition, molecular beam epitaxy, ion plating, and sputtering.
Image
Published: 01 December 2009
Fig. 2 Flow regimes in physical vapor deposition (PVD) and chemical vapor deposition (CVD) versus Knudsen number (Kn). FB-CVD, fluidized-bed CVD; LPCVD, low-pressure CVD; UHVCVD, ultrahigh-vacuum CVD; MBE, molecular beam epitaxy
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Book: Surface Engineering
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001286
EISBN: 978-1-62708-170-2
... of a series of closely spaced steps. These steps aid in dense nucleation for epitaxial growth of GaAs on Si and Al x Ga 1- x As on GaAs. Scratches on the substrate surface provide nucleation sites in the deposition of diamond films. Lattice defects can act as preferential nucleation sites. For example...
Abstract
This article describes eight stages of the atomistic film growth: vaporization of the material, transport of the material to the substrate, condensation and nucleation of the atoms, nuclei growth, interface formation, film growth, changes in structure during the deposition, and postdeposition changes. It also discusses the effects and causes of growth-related properties of films deposited by physical vapor deposition processes, including residual film stress, density, and adhesion.
Book: Surface Engineering
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001287
EISBN: 978-1-62708-170-2
... environment and knowing the rate of material escaping, the equilibrium vapor pressure in the container can be calculated. The vapor pressures of the elements have been presented in tabular and graphical form ( Ref 3 ). The Knudsen cell is often used as a source for molecular beam epitaxy, where the deposition...
Abstract
This article discusses the fundamentals of thermal vaporization and condensation and provides information on the various vaporization sources and methods of vacuum deposition. It offers an overview of reactive evaporation and its deposition techniques. The article also explains the advantages, limitations, and applications of vacuum deposition processes. Finally, it provides information on the gas evaporation process, its processing chamber, and related systems.
Book Chapter
Series: ASM Handbook
Volume: 4C
Publisher: ASM International
Published: 09 June 2014
DOI: 10.31399/asm.hb.v04c.a0005834
EISBN: 978-1-62708-167-2
... heating. Zone refining, zone leveling, doping, and epitaxial deposition of semiconductor materials also make use of the induction process. Tin Reflow Electrolytically deposited tin coatings on steel sheet have a dull, matte, nonuniform finish. Heating of the sheet to 230 °C (450 °F) by induction...
Abstract
Electromagnetic induction is a way to heat electrically conductive materials such as metals. This article provides a brief history of electromagnetic induction and the development of induction heating technology. It explores various applications such as heating prior to metalworking, heat treating, melting, joining (welding, brazing/soldering, and shrink fitting), coating, paint curing, adhesive bonding, and zone refining of semiconductors. The article also discusses the advantages of induction heating.
Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0001114
EISBN: 978-1-62708-162-7
....) to a few μm are typical for the vapor deposition methods. The critical current densities observed for thin films of the oxide superconductor have shown the highest values reported to date for high- T c materials. These thin films, however, are highly idealized in that the film is of epitaxial grade...
Abstract
The discovery of the high-critical-temperature oxide superconductors has accelerated the interest for superconducting applications due to its higher-temperature operation at liquid nitrogen or above and thus reduces the refrigeration and liquid helium requirement. It also permits usage of the high-critical-temperature oxides in magnets or power applications in high-current-carrying wire or tape with acceptable mechanical capability. This article discusses the powder techniques mainly based on the production of an oxide powder precursor, which is then subjected to various processing, including powder-in-tube processing, vapor deposition processing, and melt processing. It further discusses the microstructural, anisotropy and weak link influences on these processes.
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006670
EISBN: 978-1-62708-213-6
... of semiconducting materials that are available only in the form of thin films grown on the surface of single-crystal wafers. For a few specific classes of materials and deposition techniques, these thin films can be grown epitaxially on the surface of a single-crystal substrate, meaning that the atoms align...
Abstract
This article introduces various techniques commonly used in the characterization of semiconductors, namely single-crystal, polycrystalline, amorphous, oxide, organic, and low-dimensional semiconductors and semiconductor devices. The discussion covers material classification, fabrication methods, sample preparation, bulk/elemental characterization methods, microstructural characterization methods, surface characterization methods, and electronic characterization methods.
Book: Surface Engineering
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001260
EISBN: 978-1-62708-170-2
... . The technique, called electrochemical atomic layer epitaxy (ECALE), takes advantage of the underpotential deposition (UPD) phenomenon that occurs when the first monolayer (or partial monolayer) of a surface film is formed. The energetics of the first atomic layer of a deposit is often favorable compared to bulk...
Abstract
Multiple-layer alloy electrodeposition involves the formation of an inhomogeneous alloy consisting of lamellae of different composition. This article reviews the process description, engineering parameters, characterization, and applications of multiple-layer alloys. Pulsed-current plating and pulsed-potential plating are also discussed.
Book: Surface Engineering
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0005586
EISBN: 978-1-62708-170-2
... computer numerical control cP centipoise CSOM confocal scanning optical microscope cSt centistokes CTE coefficient of thermal expansion CVD chemical vapor deposition CVI chemical vapor infiltration CVN Charpy V-notch (impact test or specimen) cw...
Book Chapter
Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0005549
EISBN: 978-1-62708-162-7
... omega vol volume function of temperature vol% volume percent friction coefficient; magnetic Tradenames VPE vapor-phase epitaxy VPSD vacuum plasma structural permeability AF-56 is a registered tradename of Allison F microfarads Gas Turbine, Division of General Motors deposition in. microinch Corporation...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006628
EISBN: 978-1-62708-213-6
... an incidence perpendicular to the sample surface. The time required for a complete sample scan is usually 1.5 h at a dose of ~3 × 10 13 cm 2 , which provides sufficiently low coverage to avoid radiation damage from the primary beam. The metal deposition rate on a sample surface is approximately 1.0 monolayer...
Abstract
This article is a brief account of low-energy ion-scattering spectroscopy (LEIS) for determining the atomic structure of solid surfaces. It begins with a description of the general principles of LEIS. This is followed by a section providing information on the equipment used for LEIS. Various steps involved in the sample preparation, calibration, and data analysis are then discussed. The article concludes with a section on the applications and interpretation of LEIS in material analysis, including discussion on surface structural analysis, layer-by-layer (Frank-van der Merwe) growth, and low-energy atom-scattering spectroscopy.
Book: Surface Engineering
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001290
EISBN: 978-1-62708-170-2
... Advantages and limitations of ion-beam-assisted deposition Advantages, achievable benefits Low deposition temperature High adhesion Control of stress level Bulk density achievable Control of microstructure (nanocrystalline; metastable crystalline or amorphous; textured; and epitaxial...
Abstract
Ion-beam-assisted deposition (IBAD) refers to the process wherein evaporated atoms produced by physical vapor deposition are simultaneously struck by an independently generated flux of ions. This article discusses the energy utilization of this process. It describes the physical and chemical processes occurring at the film-vacuum interface during IBAD and dual-ion-beam sputtering with illustrations. The article also reviews the methods used for large-area, high-volume implementation of IBAD and the modes of film formation for IBAD. It contains a table that presents information on deposition and synthesis of inorganic compounds by IBAD and concludes with a discussion on the improved coating properties, advantages, limitations, and applications of IBAD.
Book: Surface Engineering
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001294
EISBN: 978-1-62708-170-2
.... Materials PLD is currently being used to deposit thin films for a wide range of technological applications. These films vary from epitaxial superlattices of electronic materials to polycrystalline bioceramics. Several recent review articles have attempted to catalog research efforts to date ( Ref 15...
Abstract
This article presents a general description of pulsed-laser deposition. It describes the components of pulsed-laser deposition equipment. The article also discusses the effects of angular distribution of materials. Finally, the article reviews the characteristics of high-temperature superconductors and ferroelectric materials.
Book Chapter
Series: ASM Handbook
Volume: 9
Publisher: ASM International
Published: 01 December 2004
DOI: 10.31399/asm.hb.v09.a0003785
EISBN: 978-1-62708-177-1
... the weld deposit differs greatly in hardness from the substrate. In these cases, extra care and/or automatic grinding equipment are recommended. Final grinding and polishing should be performed as recommended for the alloy system(s) present in the joint. Special precautions apply to welds made...
Abstract
This article provides a review of metallographic procedures and techniques for analyzing the microstructure of fusion welded joints. It discusses sample preparation, the use of backing plates, and common sectioning methods. It identifies the various types of defects that can occur in arc welded metals, organizing them according to the sectioning method by which they are observed. It describes the relationship between weld bead morphology and sectioning direction and its effect on measurement error. The article examines micrographs from stainless steel, aluminum, and titanium alloy joints, highlighting important details such as solidification and solid-state transformation structures and what they reveal about the welding process. Besides arc welding, it also discusses laser and electron beam welding methods, resistance and spot welding, and the welding of dissimilar metals.
Book Chapter
Series: ASM Handbook
Volume: 24
Publisher: ASM International
Published: 15 June 2020
DOI: 10.31399/asm.hb.v24.a0006581
EISBN: 978-1-62708-290-7
... microstructural banding, that is, microstructural differences between deposition layers ( Ref 32 – 35 ). For Ti-6Al-4V, Vilaro et al. reported large columnar grains 150 μm wide; remelting resulted in a strong texture as a result of epitaxial growth nucleating on columnar grain sites. A strong anisotropy...
Abstract
Titanium alloys are known for their high-temperature strength, good fracture resistance, low specific gravity, and excellent resistance to corrosion. Ti-6Al-4V is the most commonly used titanium alloy in the aerospace, aircraft, automotive, and biomedical industries. This article discusses various additive manufacturing (AM) technologies for processing titanium and its alloys. These include directed-energy deposition (DED), powder-bed fusion (PBF), and sheet lamination. The discussion covers the effect of AM on the microstructures of the materials deposited, static and mechanical properties, and fatigue strength and fracture toughness of Ti-6Al-4V.
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