1-20 of 81 Search Results for

epitaxial deposition

Follow your search
Access your saved searches in your account

Would you like to receive an alert when new items match your search?
Close Modal
Sort by
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001284
EISBN: 978-1-62708-170-2
...Abstract Abstract This article describes the vapor-phase growth techniques applied to the epitaxial deposition of semiconductor films and discusses the fundamental processes involved in metal-organic chemical vapor deposition (MOCVD). It reviews the thermodynamics that determine the driving...
Series: ASM Handbook
Volume: 5A
Publisher: ASM International
Published: 01 August 2013
DOI: 10.31399/asm.hb.v05a.a0005707
EISBN: 978-1-62708-171-9
..., and anodizing), chemical treatments (electroless plating, phosphating, and hot dip coating), hardfacing, and thermal spray processes. It provides information on chemical and physical vapor deposition techniques such as conventional CVD, laser-assisted CVD, cathodic arc deposition, molecular beam epitaxy, ion...
Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0001091
EISBN: 978-1-62708-162-7
... arsenide can be deposited by MOCVD or MBE over the entire silicon wafer, a method called blanket epitaxy, or islands of GaAs can be epitaxially deposited on the silicon wafer, a method called selective epitaxy. Wafers produced by blanket epitaxy could replace bulk GaAs wafers for GaAs MMICs and digital ICs...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001285
EISBN: 978-1-62708-170-2
.... Examples of films that are commonly deposited using the PECVD process are noncrystalline materials such as oxides, nitrides, and oxynitrides of silicon ( Ref 1 ), and crystalline materials such as polycrystalline silicon ( Ref 2 , 3 , 4 ), epitaxial silicon ( Ref 5 , 6 , 7 ), and refractory metals...
Series: ASM Handbook
Volume: 4C
Publisher: ASM International
Published: 09 June 2014
DOI: 10.31399/asm.hb.v04c.a0005834
EISBN: 978-1-62708-167-2
... bonding. Metal-to-nonmetal seals, widely used in vacuum devices, also rely heavily on induction heating. The growing of single crystals of germanium and silicon often relies on induction heating. Zone refining, zone leveling, doping, and epitaxial deposition of semiconductor materials also make use...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001286
EISBN: 978-1-62708-170-2
... of a series of closely spaced steps. These steps aid in dense nucleation for epitaxial growth of GaAs on Si and Al x Ga 1- x As on GaAs. Scratches on the substrate surface provide nucleation sites in the deposition of diamond films. Lattice defects can act as preferential nucleation sites. For example...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001287
EISBN: 978-1-62708-170-2
... for molecular beam epitaxy, where the deposition rate can be carefully controlled by controlling the temperature of the source ( Ref 4 ) or by mechanically interrupting the beam ( Ref 5 ). Figure 2(a) and 2(b) shows the vapor pressure of selected materials as a function of temperature. Note...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006670
EISBN: 978-1-62708-213-6
... chloride gas or a metal organic liquid precursor vapor and group V hydride gases in the case of vapor phase epitaxy and metal organic chemical vapor deposition. A discussion of semiconductor processing would be incomplete without reference to how these materials are used to form electronic devices...
Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0001114
EISBN: 978-1-62708-162-7
... current density for vapor deposited (VD) tapes or wires on a metallic substrate is considerably degraded compared to the epitaxial films. Prototype VD tapes produced to date typically show 10 3 to 10 4 A/cm 2 at 77 K and zero field, which is a direct result of their polycrystalline nature ( Ref 12...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0005586
EISBN: 978-1-62708-170-2
... computer numerical control cP centipoise CSOM confocal scanning optical microscope cSt centistokes CTE coefficient of thermal expansion CVD chemical vapor deposition CVI chemical vapor infiltration CVN Charpy V-notch (impact test or specimen) cw...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001260
EISBN: 978-1-62708-170-2
... . The technique, called electrochemical atomic layer epitaxy (ECALE), takes advantage of the underpotential deposition (UPD) phenomenon that occurs when the first monolayer (or partial monolayer) of a surface film is formed. The energetics of the first atomic layer of a deposit is often favorable compared to bulk...
Series: ASM Handbook
Volume: 9
Publisher: ASM International
Published: 01 December 2004
DOI: 10.31399/asm.hb.v09.a0003785
EISBN: 978-1-62708-177-1
... hardness are joined or when the weld deposit differs greatly in hardness from the substrate. In these cases, extra care and/or automatic grinding equipment are recommended. Final grinding and polishing should be performed as recommended for the alloy system(s) present in the joint. Special precautions...
Series: ASM Handbook
Volume: 13A
Publisher: ASM International
Published: 01 January 2003
DOI: 10.31399/asm.hb.v13a.a0003681
EISBN: 978-1-62708-182-5
... from the target to a substrate; the sputtered material arrives at the substrate with enough energy to promote good adhesion of the coating to substrate. Ion beam mixing: Deposited layers (electroplating, sputtering) tens or hundreds of nanometers thick are mixed and bonded to the substrate...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006628
EISBN: 978-1-62708-213-6
... of the shadow cone created by the first atom A is on the center of the second atom B. The number of backscattered ions increases due to the focusing effects at a critical angle of αcr . Fig. 10 Time-flight-spectra at Pt(111) substrate temperature of 300 K during Pd deposition Fig. 11...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001290
EISBN: 978-1-62708-170-2
... Advantages and limitations of ion-beam-assisted deposition Advantages, achievable benefits Low deposition temperature High adhesion Control of stress level Bulk density achievable Control of microstructure (nanocrystalline; metastable crystalline or amorphous; textured; and epitaxial...
Series: ASM Handbook
Volume: 22A
Publisher: ASM International
Published: 01 December 2009
DOI: 10.31399/asm.hb.v22a.a0005434
EISBN: 978-1-62708-196-2
... equations. It describes the modeling of vapor-surface interactions and kinetics of hetereogeneous processes as well as the modeling and kinetics of homogenous reactions in chemical vapor deposition (CVD). The article provides information on the various stages of developing models for numerical simulation...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001294
EISBN: 978-1-62708-170-2
... not seem to affect the properties of YBCO films. Materials PLD is currently being used to deposit thin films for a wide range of technological applications. These films vary from epitaxial superlattices of electronic materials to polycrystalline bioceramics. Several recent review articles have...
Series: ASM Handbook
Volume: 2
Publisher: ASM International
Published: 01 January 1990
DOI: 10.31399/asm.hb.v02.a0001090
EISBN: 978-1-62708-162-7
... as substrates for the epitaxial deposition of gallium arsenide (GaAs) or gallium arsenide phosphide (GaAsP) for use as light-emitting diodes or solar cells. These substrates take the place of more expensive gallium arsenide wafers. Many metric tons of germanium were consumed in the mid-1970s for the production...
Series: ASM Handbook
Volume: 6
Publisher: ASM International
Published: 01 January 1993
DOI: 10.31399/asm.hb.v06.a0001419
EISBN: 978-1-62708-173-3
... filler metal provided virtually porosity-free weld deposits following the vacuum pretreatment of the base alloy. Transverse weld tensile testing of the gas-tungsten arc welds produced using the ER5356 filler wire additions and vacuum pretreatment showed the joint efficiency to increase from 55% at room...
Series: ASM Handbook
Volume: 24
Publisher: ASM International
Published: 15 June 2020
DOI: 10.31399/asm.hb.v24.a0006581
EISBN: 978-1-62708-290-7
... banding, that is, microstructural differences between deposition layers ( Ref 32 – 35 ). For Ti-6Al-4V, Vilaro et al. reported large columnar grains 150 μm wide; remelting resulted in a strong texture as a result of epitaxial growth nucleating on columnar grain sites. A strong anisotropy in fracture...