The introduction of focused ion beam (FIB) microscopy in the 1990s added the capability of studying fracture surfaces in the third dimension and making site-specific and stress-free transmission electron microscope (TEM) specimens in situ. This article reviews the methods for preparing replicas and the site-specific FIB thin-foil preparation technique. It provides an overview of FIB-TEM specimen preparation.

This article presumes the reader has a basic understanding of the operation and principles of scanning electron microscopy (SEM). The emphasis of this article is specifically on the application of SEM to the study of metallic and nonmetallic fracture surfaces, where the typical objectives of SEM examination of a fracture surface may include the following: identification of characteristic fracture features to aid in identifying fracture mechanism(s); characterization of material anomalies that may have influenced the fracture; qualitative or semiquantitative chemical analysis of component material(s); and qualitative or semiquantitative analysis of deposits or corrosion products on or near fracture surfaces.

The scanning electron microscope (SEM) is one of the most versatile instruments for investigating the microscopic features of most solid materials. The SEM provides the user with an unparalleled ability to observe and quantify the surface of a sample. This article discusses the development of SEM technology and operating principles of basic systems of SEM. The basic systems covered include the electron optical column, signal detection and display equipment, and the vacuum system. The processes involved in the preparation of samples for observation using an SEM are described, and the application of SEM in fractography is discussed. The article covers the failure mechanisms of ductile failure, brittle failure, mixed-mode failure, and fatigue failure. Lastly, image dependence on microscope type and operating parameters is also discussed.

This article provides detailed information on the instrumentation and principles of the scanning electron microscope (SEM). It begins with a description of the primary components of a conventional SEM instrument. This is followed by a discussion on the advantages and disadvantages of the SEM compared with other common microscopy and microanalysis techniques. The following sections cover the critical issues regarding sample preparation, the physical principles regarding electron beam-sample interaction, and the mechanisms for many types of image contrast. The article also presents the details of SEM-based techniques and specialized SEM instruments. It ends with example applications of various SEM modes.

Transmission electron microscopy (TEM) approach enables essentially simultaneous examination of microstructural features through imaging from lower magnifications to atomic resolution and the acquisition of chemical and crystallographic information from small regions of the thin specimen. This article discusses fundamentals of the technique, especially for solving materials problems. Background information is provided to help understand basic operations and principles, including instrumentation, the physics of signal generation and detection, image formation, electron diffraction, and spectrometry techniques with data analysis.

This article outlines the beam/sample interactions and the basic instrumental design of a scanning electron microscopy (SEM), which include the electron gun, probeforming column (consisting of magnetic electron lenses, apertures, and scanning coils), electron detectors, and vacuum system. It discusses the contrasts mechanisms used for imaging and analyzing materials in the SEM. These include the topographic contrast, compositional contrast, and electron channeling pattern and orientation contrast. Special instrumentation and accessory equipment used at elevated pressures and during the X-ray microanalysis are reviewed. The article also provides information on the sample preparation procedure and the materials applications of the SEM.

This article introduces the concepts of electron and light microscopy with some general features of imaging systems and the ideas of magnification, resolution, depth of field, depth of focus, and lens aberrations as they apply to simple and familiar light-optical systems. In addition, it describes the differences between electron and light in the context of their respective microscopy techniques.

The scanning electron microscopy (SEM) is one of the most versatile instruments for investigating the microstructure of metallic materials. This article highlights the development of SEM technology and describes the operation of basic systems in an SEM, including the electron optical column, signal detection and display equipment, and vacuum system. It discusses the preparation of samples for observation using an SEM and describes the application of SEM in fractography. If the surface remains unaffected and undamaged by events subsequent to the actual failure, it is often a simple matter to determine the failure mode by the use of an SEM. In cases where the surface is altered after the initial failure, the case may not be so straightforward. The article presents typical examples that illustrate these points. Image dependence on the microscope type and operating parameters is also discussed.

Scanning electron microscopy (SEM) has unique capabilities for analyzing fracture surfaces. This article discusses the basic principles and practice of SEM, with an emphasis on its applications in fractography. The topics include an introduction to SEM instrumentation, imaging and analytical capabilities, specimen preparation, and the interpretation of fracture features. SEM can be subdivided into four systems, namely, illuminating/imaging, information, display, and vacuum systems. The article also describes the major criteria and techniques of SEM specimen preparation, and the general features of ductile and brittle fracture modes.

The application of transmission electron microscope to the study of fracture surfaces and related phenomena has made it possible to obtain magnifications and depths of field much greater than those possible with light (optical) microscopes. This article reviews the methods for preparing single-stage, double-stage, and extraction replicas of fracture surfaces. It discusses the types of artifacts and their effects on these replicas, and provides information on shadowing of replicas. The article concludes with a comparison of the transmission electron and scanning electron fractographs with illustrations.

Analytical transmission electron microscopy (ATEM) is unique among materials characterization techniques as it enables essentially the simultaneous examination of microstructural features through high-resolution imaging and the acquisition of chemical and crystallographic information from small regions of the specimen. This article illustrates the effectiveness of the technique in solving materials problems. The first section of the article provides information on analytical electron microscope (AEM) and its basic operational characteristics as well as on electron optics, electron beam/specimen interactions and the generation of a signal, signal detectors, electron diffraction, imaging, x-ray microanalysis, electron energy loss spectroscopy, and sample preparation. The second section consists of 12 examples, each illustrating a specific type of materials problem that can be solved, at least in part, with AEM.

Scanning electron microscopy (SEM) has shown various significant improvements since it first became available in 1965. These improvements include enhanced resolution, dependability, ease of operation, and reduction in size and cost. This article provides a detailed account of the instrumentation and principles of SEM, broadly explaining its capabilities in resolution and depth of field imaging. It describes three additional functions of SEM, including the use of channeling patterns to evaluate the crystallographic orientation of micron-sized regions; use of backscattered detectors to reveal grain boundaries on unetched samples and domain boundaries in ferromagnetic alloys; and the use of voltage contrast, electron beam-induced currents, and cathodoluminescence for the characterization and failure analysis of semiconductor devices. The article compares the features of SEM with that of scanning Auger microscopes, and lists the applications and limitations of SEM.