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Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001290
EISBN: 978-1-62708-170-2
... and chemical processes occurring at the film-vacuum interface during IBAD and dual-ion-beam sputtering with illustrations. The article also reviews the methods used for large-area, high-volume implementation of IBAD and the modes of film formation for IBAD. It contains a table that presents information...
Image
Published: 01 January 1994
Fig. 1 Two common processing techniques. (a) Ion-beam-assisted deposition (IBAD). (b) Dual-ion-beam sputtering (DIBS) More
Image
Published: 01 January 1994
Fig. 2 Physical and chemical processes at the film-vacuum interface during ion-beam-assisted deposition and dual-ion-beam sputtering More
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0005586
EISBN: 978-1-62708-170-2
... hardness tester DBT ductile-to-brittle transition dc direct current dhcp double hexagonal close-packed diam diameter DIBS dual-ion-beam sputtering DIN Deutsche Industrie-Normen (German Industrial Standards) DLC diamondlike carbon dL / dX...
Image
Published: 15 May 2022
Fig. 62 Depth profile of selected secondary ions using dual-beam depth profiling of a multistack organic light-emitting diode film. Analysis beam: Bi 3 + . Sputtering beam: 5 keV Ar 1700 + . NBphen: 2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline; Alq3: tris-(8-hydroxyquinoline More
Series: ASM Desk Editions
Publisher: ASM International
Published: 01 December 1998
DOI: 10.31399/asm.hb.mhde2.a0003219
EISBN: 978-1-62708-199-3
... Abstract Physical vapor deposition (PVD) coatings are harder than any metal and are used in applications that cannot tolerate even microscopic wear losses. This article describes the three most common PVD processes: thermal evaporation, sputtering, and ion plating. It also discusses ion...
Book Chapter

By Donald M. Mattox
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001289
EISBN: 978-1-62708-170-2
... ). The bombarding species and the depositing species can be from a number of sources. Bombardment can take place in a plasma or vacuum environment. When a beam of energetic particles is used in vacuum, the process is often called ion-beam-assisted deposition (IBAD). A vacuum can be defined as an environment...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006677
EISBN: 978-1-62708-213-6
... modification, or a variety of other tasks, which are discussed later. However, the more common configuration today (2019) is the FIB-SEM (also known as dual beam or cross beam). These instruments are a combination of an FIB and an SEM in which the ion beam and the electron beam are nominally coincident...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001292
EISBN: 978-1-62708-170-2
... or hazardous material and produces no effluent that requires special precautions. Semiconductor applications typically do use toxic gases for production of ion beams, and chlorine gas is sometimes used for producing heavy metal ion beams. However, implanters using a MEVVA, high-temperature, or sputtering heavy...
Book Chapter

By S.L. Rohde
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001288
EISBN: 978-1-62708-170-2
... Abstract Sputtering is a nonthermal vaporization process in which the surface atoms are physically ejected from a surface by momentum transfer from an energetic bombarding species of atomic/molecular size. It uses a glow discharge or an ion beam to generate a flux of ions incident on the target...
Series: ASM Handbook Archive
Volume: 10
Publisher: ASM International
Published: 01 January 1986
DOI: 10.31399/asm.hb.v10.a0001770
EISBN: 978-1-62708-178-8
...). Auger electron emission is also caused by energetic ions, such as those used for ion beam sputtering of solid surfaces, in conjunction with most surface analysis techniques. However, ion-induced Auger yields are pronounced only for some elements, for example, aluminum, and generally from 0 to 100 eV...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006648
EISBN: 978-1-62708-213-6
... transfer between ions of the discharge gas and sputtered species, which is a selective ionization mechanism only possible if the sputtered atoms have ionic excited levels with similar energy to the ionization potential of the discharge gas ( Ref 6 ); and Penning ionization, which results from...
Series: ASM Handbook
Volume: 11B
Publisher: ASM International
Published: 15 May 2022
DOI: 10.31399/asm.hb.v11B.a0006943
EISBN: 978-1-62708-395-9
... surface of the specimen to a depth of a few atomic or molecular layers, generally between 3 and 10 nm for AES and XPS. The depth of analysis in AES and XPS can be increased by ion etching, as the material is removed from the surface by sputtering and simultaneous analysis. Auger electron spectroscopy can...
Series: ASM Handbook
Volume: 22B
Publisher: ASM International
Published: 01 November 2010
DOI: 10.31399/asm.hb.v22b.a0005504
EISBN: 978-1-62708-197-9
...) over the surface of a sample. The interaction of the ion beam with the sample allows for direct imaging of the sample surface and also results in material removal through sputtering. Ion beam spot sizes are routinely of the order of tens of nanometers for FIB systems, and so, these instruments...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001287
EISBN: 978-1-62708-170-2
...” in this article), or postdeposition heat treatments in oxygen ( Ref 24 ). In some cases, the state of reaction can be increased by concurrent bombardment with a reactive species from a plasma (activated reactive ion plating) ( Ref 25 ) or an ion source (reactive ion beam assisted deposition). For example, SiO...
Series: ASM Handbook Archive
Volume: 10
Publisher: ASM International
Published: 01 January 1986
DOI: 10.31399/asm.hb.v10.a0001771
EISBN: 978-1-62708-178-8
... with a beam of inert gas ions, usually argon or xenon. Sputtering rates can be varied from a few angstroms per minute to several hundred angstroms per minute by changing the ion current and accelerating potential. However, ion bombardment can introduce uncertainties into the results. In some cases...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.9781627082136
EISBN: 978-1-62708-213-6
Series: ASM Handbook
Volume: 12
Publisher: ASM International
Published: 01 June 2024
DOI: 10.31399/asm.hb.v12.a0006847
EISBN: 978-1-62708-387-4
... Abstract The introduction of focused ion beam (FIB) microscopy in the 1990s added the capability of studying fracture surfaces in the third dimension and making site-specific and stress-free transmission electron microscope (TEM) specimens in situ. This article reviews the methods for preparing...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006748
EISBN: 978-1-62708-213-6
... of polarization. atoms, ions, radicals, and molecules. coulometric titration. angle of incidence. The angle between an inci- absorptivity. A measure of radiant energy analog-to-digital converter (ADC). A device dent radiant beam and a perpendicular to the from an incident beam as it traverses an that converts...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006678
EISBN: 978-1-62708-213-6
... produced compact SEMs, smaller and more robust instruments as well as some that are portable for remote analysis. More powerful computers, automated stages, and automated SEM control enabled significant advances in high-throughput analysis. Focused ion beams were combined with the SEM to produce dual-beam...