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Book: Surface Engineering
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001290
EISBN: 978-1-62708-170-2
... and chemical processes occurring at the film-vacuum interface during IBAD and dual-ion-beam sputtering with illustrations. The article also reviews the methods used for large-area, high-volume implementation of IBAD and the modes of film formation for IBAD. It contains a table that presents information...
Abstract
Ion-beam-assisted deposition (IBAD) refers to the process wherein evaporated atoms produced by physical vapor deposition are simultaneously struck by an independently generated flux of ions. This article discusses the energy utilization of this process. It describes the physical and chemical processes occurring at the film-vacuum interface during IBAD and dual-ion-beam sputtering with illustrations. The article also reviews the methods used for large-area, high-volume implementation of IBAD and the modes of film formation for IBAD. It contains a table that presents information on deposition and synthesis of inorganic compounds by IBAD and concludes with a discussion on the improved coating properties, advantages, limitations, and applications of IBAD.
Image
Published: 01 January 1994
Fig. 1 Two common processing techniques. (a) Ion-beam-assisted deposition (IBAD). (b) Dual-ion-beam sputtering (DIBS)
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Image
Published: 01 January 1994
Fig. 2 Physical and chemical processes at the film-vacuum interface during ion-beam-assisted deposition and dual-ion-beam sputtering
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Book: Surface Engineering
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0005586
EISBN: 978-1-62708-170-2
... hardness tester DBT ductile-to-brittle transition dc direct current dhcp double hexagonal close-packed diam diameter DIBS dual-ion-beam sputtering DIN Deutsche Industrie-Normen (German Industrial Standards) DLC diamondlike carbon dL / dX...
Image
Published: 15 May 2022
Fig. 62 Depth profile of selected secondary ions using dual-beam depth profiling of a multistack organic light-emitting diode film. Analysis beam: Bi 3 + . Sputtering beam: 5 keV Ar 1700 + . NBphen: 2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline; Alq3: tris-(8-hydroxyquinoline
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Book Chapter
Series: ASM Desk Editions
Publisher: ASM International
Published: 01 December 1998
DOI: 10.31399/asm.hb.mhde2.a0003219
EISBN: 978-1-62708-199-3
... Abstract Physical vapor deposition (PVD) coatings are harder than any metal and are used in applications that cannot tolerate even microscopic wear losses. This article describes the three most common PVD processes: thermal evaporation, sputtering, and ion plating. It also discusses ion...
Abstract
Physical vapor deposition (PVD) coatings are harder than any metal and are used in applications that cannot tolerate even microscopic wear losses. This article describes the three most common PVD processes: thermal evaporation, sputtering, and ion plating. It also discusses ion implantation in the context of research and development applications.
Book: Surface Engineering
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001289
EISBN: 978-1-62708-170-2
... ). The bombarding species and the depositing species can be from a number of sources. Bombardment can take place in a plasma or vacuum environment. When a beam of energetic particles is used in vacuum, the process is often called ion-beam-assisted deposition (IBAD). A vacuum can be defined as an environment...
Abstract
This article begins with a list of the factors that influence the properties of physical vapor deposited films. It describes the steps involved in ion plating, namely, surface preparation, nucleation, interface formation, and film growth. The article discusses the factors influencing the properties of ion-plated films. The sources of potential applied on substrate surface, bombarding species, and depositing species are addressed. The article also provides information on the parameters that influence bombardment. It concludes with a discussion on the advantages, limitations, and applications of ion plating.
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006677
EISBN: 978-1-62708-213-6
... modification, or a variety of other tasks, which are discussed later. However, the more common configuration today (2019) is the FIB-SEM (also known as dual beam or cross beam). These instruments are a combination of an FIB and an SEM in which the ion beam and the electron beam are nominally coincident...
Abstract
This article is intended to provide the reader with a good understanding of the underlying science, technology, and the most common applications of focused ion beam (FIB) instruments. It begins with a survey of the various types of FIB instruments and their configurations, discusses the essential components, and explains their function only to the extent that it helps the operator obtain the desired results. An explanation of how the components of ion optical column shape and steer the ion beam to the desired target locations is then provided. The article also reviews the many diverse accessories and options that enable the instrument to realize its full potential across all of the varied applications. This is followed by a detailed analysis of the physical processes associated with the ion beam interacting with the sample. Finally, a complete survey of the most prominent FIB applications is presented.
Book: Surface Engineering
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001292
EISBN: 978-1-62708-170-2
... or hazardous material and produces no effluent that requires special precautions. Semiconductor applications typically do use toxic gases for production of ion beams, and chlorine gas is sometimes used for producing heavy metal ion beams. However, implanters using a MEVVA, high-temperature, or sputtering heavy...
Abstract
Ion implantation involves the bombardment of a solid material with medium-to-high-energy ionized atoms and offers the ability to alloy virtually any elemental species into the near-surface region of any substrate. This article describes the fundamentals of the ion implantation process and discusses the advantages, limitations, and applications of ion implantation. It also reviews a typical medium current semiconductor implanter adapted for implantation of metals with the aid of illustrations.
Book: Surface Engineering
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001288
EISBN: 978-1-62708-170-2
... Abstract Sputtering is a nonthermal vaporization process in which the surface atoms are physically ejected from a surface by momentum transfer from an energetic bombarding species of atomic/molecular size. It uses a glow discharge or an ion beam to generate a flux of ions incident on the target...
Abstract
Sputtering is a nonthermal vaporization process in which the surface atoms are physically ejected from a surface by momentum transfer from an energetic bombarding species of atomic/molecular size. It uses a glow discharge or an ion beam to generate a flux of ions incident on the target surface. This article provides an overview of the advantages and limitations of sputter deposition. It focuses on the most common sputtering techniques, namely, diode sputtering, radio-frequency sputtering, triode sputtering, magnetron sputtering, and unbalanced magnetron sputtering. The article discusses the fundamentals of plasma formation and the interactions on the target surface. A comparison of reactive and nonreactive sputtering is also provided. The article concludes with a discussion on the several methods of process control and the applications of sputtered films.
Series: ASM Handbook Archive
Volume: 10
Publisher: ASM International
Published: 01 January 1986
DOI: 10.31399/asm.hb.v10.a0001770
EISBN: 978-1-62708-178-8
...). Auger electron emission is also caused by energetic ions, such as those used for ion beam sputtering of solid surfaces, in conjunction with most surface analysis techniques. However, ion-induced Auger yields are pronounced only for some elements, for example, aluminum, and generally from 0 to 100 eV...
Abstract
This article describes the principles and applications of Auger electron spectroscopy (AES). It provides information on the instrumentation typically used in the AES, including an electron gun, an electron spectrometer, a secondary electron detector, and an ion gun. The article also describes experimental methods and limitations of the AES, including elemental detection sensitivity, electron beam artifacts, sample charging, spectral peak overlap, high vapor pressure samples, and sputtering artifacts.
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006648
EISBN: 978-1-62708-213-6
... transfer between ions of the discharge gas and sputtered species, which is a selective ionization mechanism only possible if the sputtered atoms have ionic excited levels with similar energy to the ionization potential of the discharge gas ( Ref 6 ); and Penning ionization, which results from...
Abstract
This article provides a brief account of glow discharge mass spectrometry (GDMS) for direct determination of trace elements in solid samples and for fast depth profiling in a great variety of innovative materials. It begins by describing the general principles of GDMS. This is followed by a discussion on the various components of a GDMS system as well as commercial GDMS instruments. A description of processes involved in specimen preparation and cleaning in GDMS is then presented. Various problems pertinent to multielemental calibrations in GDMS are discussed along with measures to overcome them. The article further provides information on the processes involved in the analytical setup of parameters in GDMS, covering the steps involved in the analysis of GDMS data. It ends with a section on the application and interpretation of GDMS in the metals industry.
Series: ASM Handbook
Volume: 11B
Publisher: ASM International
Published: 15 May 2022
DOI: 10.31399/asm.hb.v11B.a0006943
EISBN: 978-1-62708-395-9
... surface of the specimen to a depth of a few atomic or molecular layers, generally between 3 and 10 nm for AES and XPS. The depth of analysis in AES and XPS can be increased by ion etching, as the material is removed from the surface by sputtering and simultaneous analysis. Auger electron spectroscopy can...
Abstract
This article discusses the operating principles, advantages, and limitations of scanning electron microscopy, atomic force microscopy, x-ray photoelectron spectroscopy, and secondary ion mass spectroscopy that are used to analyze the surface chemistry of plastics.
Series: ASM Handbook
Volume: 22B
Publisher: ASM International
Published: 01 November 2010
DOI: 10.31399/asm.hb.v22b.a0005504
EISBN: 978-1-62708-197-9
...) over the surface of a sample. The interaction of the ion beam with the sample allows for direct imaging of the sample surface and also results in material removal through sputtering. Ion beam spot sizes are routinely of the order of tens of nanometers for FIB systems, and so, these instruments...
Abstract
This article reviews the characterization methods for producing 3-D microstructural data sets. The methods include serial sectioning by mechanical material removal method and focused ion beam tomography method. The article describes how these data sets are used in realistic 3-D simulations of microstructural evolution during materials processing and materials response. It also explains how the 3-D experimental data are actually input and used in the simulations using phase-field modeling and finite-element modeling.
Book: Surface Engineering
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001287
EISBN: 978-1-62708-170-2
...” in this article), or postdeposition heat treatments in oxygen ( Ref 24 ). In some cases, the state of reaction can be increased by concurrent bombardment with a reactive species from a plasma (activated reactive ion plating) ( Ref 25 ) or an ion source (reactive ion beam assisted deposition). For example, SiO...
Abstract
This article discusses the fundamentals of thermal vaporization and condensation and provides information on the various vaporization sources and methods of vacuum deposition. It offers an overview of reactive evaporation and its deposition techniques. The article also explains the advantages, limitations, and applications of vacuum deposition processes. Finally, it provides information on the gas evaporation process, its processing chamber, and related systems.
Series: ASM Handbook Archive
Volume: 10
Publisher: ASM International
Published: 01 January 1986
DOI: 10.31399/asm.hb.v10.a0001771
EISBN: 978-1-62708-178-8
... with a beam of inert gas ions, usually argon or xenon. Sputtering rates can be varied from a few angstroms per minute to several hundred angstroms per minute by changing the ion current and accelerating potential. However, ion bombardment can introduce uncertainties into the results. In some cases...
Abstract
This article provides a detailed account of the principles, instrumentation,and applications of x-ray photoelectron spectroscopy (XPS), a technique used for elemental and compositional analysis of surfaces and thin films. It reviews the nomenclature of energy states and sensitivity of electrons at the surface that are capable of producing peaks in XPS. Additionally, it presents information on the instrumentation and the preparation and mounting of samples for XPS analysis. The article explains qualitative analysis, namely, measuring of shifts in the binding energy of core electrons, multiplet splitting, and the Auger parameter; and quantitative analysis such as depth analysis carried out using XPS. It also discusses the applications of XPS with examples.
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.9781627082136
EISBN: 978-1-62708-213-6
Book: Fractography
Series: ASM Handbook
Volume: 12
Publisher: ASM International
Published: 01 June 2024
DOI: 10.31399/asm.hb.v12.a0006847
EISBN: 978-1-62708-387-4
... Abstract The introduction of focused ion beam (FIB) microscopy in the 1990s added the capability of studying fracture surfaces in the third dimension and making site-specific and stress-free transmission electron microscope (TEM) specimens in situ. This article reviews the methods for preparing...
Abstract
The introduction of focused ion beam (FIB) microscopy in the 1990s added the capability of studying fracture surfaces in the third dimension and making site-specific and stress-free transmission electron microscope (TEM) specimens in situ. This article reviews the methods for preparing replicas and the site-specific FIB thin-foil preparation technique. It provides an overview of FIB-TEM specimen preparation.
Book Chapter
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006748
EISBN: 978-1-62708-213-6
... of polarization. atoms, ions, radicals, and molecules. coulometric titration. angle of incidence. The angle between an inci- absorptivity. A measure of radiant energy analog-to-digital converter (ADC). A device dent radiant beam and a perpendicular to the from an incident beam as it traverses an that converts...
Abstract
This article is a compilation of terms and definitions related to materials characterization.
Book Chapter
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006678
EISBN: 978-1-62708-213-6
... produced compact SEMs, smaller and more robust instruments as well as some that are portable for remote analysis. More powerful computers, automated stages, and automated SEM control enabled significant advances in high-throughput analysis. Focused ion beams were combined with the SEM to produce dual-beam...
Abstract
This article briefly discusses popular techniques for metals characterization. It begins with a description of the most common techniques for determining chemical composition of metals, namely X-ray fluorescence, optical emission spectroscopy, inductively coupled plasma optical emission spectroscopy, high-temperature combustion, and inert gas fusion. This is followed by a section on techniques for determining the atomic structure of crystals, namely X-ray diffraction, neutron diffraction, and electron diffraction. Types of electron microscopies most commonly used for microstructural analysis of metals, such as scanning electron microscopy, electron probe microanalysis, and transmission electron microscopy, are then reviewed. The article contains tables listing analytical methods used for characterization of metals and alloys and surface analysis techniques. It ends by discussing the objective of metallography.
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