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bombardment

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Image
Published: 01 January 1986
Fig. 2 The physical effects of primary ion bombardment: implantation and sputtering. More
Image
Published: 01 January 1986
Fig. 7 Positive SIMS spectra for an NBS reference steel under oxygen bombardment in an ion microscope. (a) Recorded without a voltage offset. (b) Recorded with a voltage offset to reject low-energy molecular secondary ions More
Image
Published: 15 December 2019
Fig. 2 Physical effects of primary ion bombardment: implantation and sputtering More
Image
Published: 15 December 2019
Fig. 3 Schematic of sputtered species ejected during primary ion bombardment of a compound i x j y ; sputtered species can be monatomic, molecular, and/or incorporate implanted primary ions. i = ○, j = ● More
Image
Published: 01 January 1986
Fig. 8 Channeled backscattering spectra of 2.4-MeV 4 He ions from silicon bombarded with 4 × 10 16 protons/cm 2 at various energies. Channeled and random spectra for unbombarded silicon are shown as the background. Source: Ref 16 More
Image
Published: 15 December 2019
Fig. 10 Channeled backscattering spectra of 2.4 MeV 4 He ions from silicon bombarded with 4 × 10 16 protons/cm 2 at various energies. Channeled and random spectra for unbombarded silicon are shown as the background. Source: Ref 29 More
Book Chapter

By Donald M. Mattox
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001289
EISBN: 978-1-62708-170-2
... the properties of ion-plated films. The sources of potential applied on substrate surface, bombarding species, and depositing species are addressed. The article also provides information on the parameters that influence bombardment. It concludes with a discussion on the advantages, limitations, and applications...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001292
EISBN: 978-1-62708-170-2
... Abstract Ion implantation involves the bombardment of a solid material with medium-to-high-energy ionized atoms and offers the ability to alloy virtually any elemental species into the near-surface region of any substrate. This article describes the fundamentals of the ion implantation process...
Book Chapter

By S.L. Rohde
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001288
EISBN: 978-1-62708-170-2
... Abstract Sputtering is a nonthermal vaporization process in which the surface atoms are physically ejected from a surface by momentum transfer from an energetic bombarding species of atomic/molecular size. It uses a glow discharge or an ion beam to generate a flux of ions incident on the target...
Series: ASM Handbook Archive
Volume: 10
Publisher: ASM International
Published: 01 January 1986
DOI: 10.31399/asm.hb.v10.a0001768
EISBN: 978-1-62708-178-8
... a microscopic part of a solid specimen bombarded by a beam of accelerated electrons. It provides information on the various aspects of energy-dispersive spectrometry (EDS) and wavelength-dispersive spectrometry (WDS), and elucidates the qualitative analysis of the major constituents of EDS and WDS. The article...
Series: ASM Handbook
Volume: 6
Publisher: ASM International
Published: 01 January 1993
DOI: 10.31399/asm.hb.v06.a0009239
EISBN: 978-1-62708-173-3
... intermetallics, and low ductility. The article reviews induction and torch brazing, infrared brazing, diffusion brazing, and brazing by heating with ion bombardment. It concludes by describing the design criteria and limitations of brazing. alpha-beta alloys brazing brittle intermetallics carbon steel...
Book Chapter

Series: ASM Handbook
Volume: 6
Publisher: ASM International
Published: 01 January 1993
DOI: 10.31399/asm.hb.v06.a0001369
EISBN: 978-1-62708-173-3
... Abstract Electron-beam welding (EBW) is a high-energy density fusion process that is accomplished by bombarding the joint to be welded with an intense (strongly focused) beam of electrons that have been accelerated up to velocities 0.3 to 0.7 times the speed of light at 25 to 200 kV...
Image
Published: 01 January 1986
Fig. 18 Phosphorus depth profiles for an ion-implanted silicon substrate. (a) Before quantitative analysis of the positive SIMS data. (b) After quantitative analysis. Obtained using 32 O 2 + bombardment in an ion microscope. Obtained using 33 Cs + beam bombardment in an ion More
Image
Published: 15 December 2019
Fig. 21 Phosphorus depth profiles for an ion-implanted silicon substrate. (a) Before quantitative analysis of the positive secondary ion mass spectroscopy data. (b) After quantitative analysis. Acquired using 32 O 2 + bombardment in an ion microscope. Acquired using 33 Cs + beam More
Image
Published: 31 October 2011
Fig. 5 Schematic illustrations of the three basic ways in which electrical energy, supplied by a power source, can be used to heat and fusion weld a metal, including (a) use of the kinetic energy of electrons and positive ions in an arc to bombard the workpiece and produce heat (in arc welding More
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001286
EISBN: 978-1-62708-170-2
..., gaseous contamination, and concurrent energetic particle bombardment (flux, particle mass, energy) Details of film growth on the substrate surface —e.g., substrate temperature, nucleation, interface formation, interfacial flaw generation, energy input to the growing film, surface mobility...
Image
Published: 01 January 1994
Fig. 3 Schematic showing interactions in the near-surface region and on a surface during massive energetic particle bombardment. Source: Ref 14 More
Image
Published: 01 January 1986
Fig. 6 Positive SIMS spectra (in the form of a bar graph) for high-purity silicon under oxygen bombardment in an ion microscope. Source: Ref 10 More
Image
Published: 01 January 1986
Fig. 9 Positive SIMS spectra for an organometallic silicate film deposited on a silicon substrate. Obtained using a scanning ion microprobe under inert argon bombardment More
Image
Published: 01 January 1986
Fig. 17 High-resolution SIMS spectra for a phosphorus-doped silicon substrate. Obtained using 32 O 2 + primary ion bombardment in an ion microscope More