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Series: ASM Handbook Archive
Volume: 10
Publisher: ASM International
Published: 01 January 1986
DOI: 10.31399/asm.hb.v10.a0001775
EISBN: 978-1-62708-178-8
... Abstract Rutherford backscattering spectrometry (RBS) is a major materials characterization technique that can provide information in a short analysis time. It is used for quantitative compositional analysis of thin films, layered structures, or bulk materials and to measure surface impurities...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006637
EISBN: 978-1-62708-213-6
... Abstract This article provides a detailed account of the basic concepts of Rutherford backscattering spectrometry (RBS). It begins with a description of the principles of RBS, as well as the effect of channeling in conjunction with backscattering measurements and the effect of energy loss under...
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Published: 01 January 1986
Fig. 4 System for backscattering analysis and signal processing. More
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Published: 01 January 1986
Fig. 5 Backscattering spectrum of a thick target consisting of magnetic bubble material. The material was known to have the garnet composition X 8 O 12 . The spectrum yields a similar composition ratio. The measured composition was Y 2.57 Eu 0.48 Ga 1.2 Fe 3.75 O 12 ; the nominal composition More
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Published: 01 January 1986
Fig. 8 Channeled backscattering spectra of 2.4-MeV 4 He ions from silicon bombarded with 4 × 10 16 protons/cm 2 at various energies. Channeled and random spectra for unbombarded silicon are shown as the background. Source: Ref 16 More
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Published: 01 January 1986
Fig. 10 Angular yield profiles of 1.2-MeV 4 He ions backscattering from gold and copper atoms in single-crystal copper containing 2 at.% Au. Source: Ref 20 More
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Published: 01 January 1994
Fig. 9 High-resolution Rutherford backscattering spectroscopy of a 10.4 nm niobium layer on sapphire (calculated solid lines) that was oxidized in air (shoulder in the experimental points distribution). 1 MeV 4 He + . Source: Ref 34 More
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Published: 01 August 2018
Fig. 13 Backscattering of Rayleigh wave from a fatigue crack grown from a surface pit. (a) Different reflected waves that will be received by the receiver. (b) Time-domain response showing the various wave modes. Source: Ref 57 More
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Published: 15 December 2019
Fig. 3 The sensitivity of Rutherford backscattering spectrometry to the various elements is proportional to the backscattering cross section σ, which varies as the square of the charge Z m contained in the nucleus of an atom of mass m ( Eq 4 ). The ordinate provides Z m 2 More
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Published: 15 December 2019
Fig. 4 System for backscattering analysis and signal processing. RBS, Rutherford backscattering spectrometry More
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Published: 15 December 2019
Fig. 6 Channeling Rutherford backscattering spectrometry (RBS) spectrum and calculated dechanneling component for hydrogen-implanted silicon. (a) Line approximation. (b) Double-iteration procedure after different cycles ( m ) of the iterative process. Source: Ref 25 More
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Published: 15 December 2019
Fig. 7 Backscattering spectrum of a thick target consisting of magnetic bubble material. The material was known to have the garnet composition X 8 O 12 . The spectrum yields a similar composition ratio. The measured composition was Y 2.57 Eu 0.48 Ga 1.2 Fe 3.75 O 12 ; the nominal composition More
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Published: 15 December 2019
Fig. 9 2.0 MeV 4 He Rutherford backscattering spectrometry spectra of arsenic-implanted silicon samples More
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Published: 15 December 2019
Fig. 10 Channeled backscattering spectra of 2.4 MeV 4 He ions from silicon bombarded with 4 × 10 16 protons/cm 2 at various energies. Channeled and random spectra for unbombarded silicon are shown as the background. Source: Ref 29 More
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Published: 15 December 2019
Fig. 12 Angular yield profiles of 1.2 MeV 4 He ions backscattering from gold and copper atoms in single-crystal copper containing 2 at.% Au. Source: Ref 33 More
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Published: 15 December 2019
Fig. 18 Simulated Rutherford backscattering spectrometry spectrum from silicon bulk/SiO 2 200 nm/Au 50 nm. Source: Ref 45 More
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Published: 01 December 2004
Fig. 1 Backscattering coefficient and secondary electron yield as functions of the atomic number at normal incidence More
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Published: 01 December 2004
Fig. 2 Backscattering coefficient and secondary electron yield as functions of tilt angle (defined as the complement of the angle between primary beam and sample surface) More
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006660
EISBN: 978-1-62708-213-6
... Abstract The electron backscatter diffraction (EBSD) technique has proven to be very useful in the measurement of crystallographic textures, orientation relationships between phases, and both plastic and elastic strains. This article focuses on backscatter diffraction in a scanning electron...
Series: ASM Handbook
Volume: 4A
Publisher: ASM International
Published: 01 August 2013
DOI: 10.31399/asm.hb.v04a.a0005800
EISBN: 978-1-62708-165-8
... the parameters associated with resistance spot welding, laser welding, and metal active gas welding. It also provides useful information of retained austenite volume fraction measured by x-ray diffraction and electron backscatter diffraction. The article also examines microstructure evolution during tensile...