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Rutherford backscattering spectrometry

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Series: ASM Handbook Archive
Volume: 10
Publisher: ASM International
Published: 01 January 1986
DOI: 10.31399/asm.hb.v10.a0001775
EISBN: 978-1-62708-178-8
... Abstract Rutherford backscattering spectrometry (RBS) is a major materials characterization technique that can provide information in a short analysis time. It is used for quantitative compositional analysis of thin films, layered structures, or bulk materials and to measure surface impurities...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006637
EISBN: 978-1-62708-213-6
... Abstract This article provides a detailed account of the basic concepts of Rutherford backscattering spectrometry (RBS). It begins with a description of the principles of RBS, as well as the effect of channeling in conjunction with backscattering measurements and the effect of energy loss under...
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Published: 15 December 2019
Fig. 3 The sensitivity of Rutherford backscattering spectrometry to the various elements is proportional to the backscattering cross section σ, which varies as the square of the charge Z m contained in the nucleus of an atom of mass m ( Eq 4 ). The ordinate provides Z m 2 More
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Published: 15 December 2019
Fig. 6 Channeling Rutherford backscattering spectrometry (RBS) spectrum and calculated dechanneling component for hydrogen-implanted silicon. (a) Line approximation. (b) Double-iteration procedure after different cycles ( m ) of the iterative process. Source: Ref 25 More
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Published: 15 December 2019
Fig. 9 2.0 MeV 4 He Rutherford backscattering spectrometry spectra of arsenic-implanted silicon samples More
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Published: 15 December 2019
Fig. 18 Simulated Rutherford backscattering spectrometry spectrum from silicon bulk/SiO 2 200 nm/Au 50 nm. Source: Ref 45 More
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Published: 15 December 2019
Fig. 4 System for backscattering analysis and signal processing. RBS, Rutherford backscattering spectrometry More
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Published: 15 December 2019
Fig. 16 Resonance effect (oscillations of the ion beam) in Rutherford backscattering spectrometry channeling. (a) Focusing and defocusing that produces oscillations. (b) Backscattering spectrum of 1.2 MeV 4 He ions along the {110} plane in a single GaP crystal. The oscillations in the planar More
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Published: 15 December 2019
Fig. 8 Energy spectra of 2.0 MeV 4 He + ions backscattered from a sample of 200 nm nickel on a surface of silicon before and after annealing at 250 °C (480 °F) for 1 and 4 h. Ni 2 Si formation is visible for the Rutherford backscattering spectrometry spectra on the two annealed samples More
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Published: 15 December 2019
-AES, inductively coupled plasma atomic emission spectroscopy; IR, infrared spectroscopy; LEISS, low-energy ion-scattering spectroscopy; NAA, neutron activation analysis; OES, optical emission spectroscopy; OM, optical metallography; RBS, Rutherford backscattering spectrometry; RS, Raman spectroscopy More
Series: ASM Handbook Archive
Volume: 10
Publisher: ASM International
Published: 01 January 1986
DOI: 10.31399/asm.hb.v10.a0005693
EISBN: 978-1-62708-178-8
... spectroscopy PGAA prompt gamma-ray activation analysis PIXE particle-induced x-ray emission RBS Rutherford backscattering spectrometry RDF radial distribution function (analysis) RHEED reflection high-energy electron diffraction SAD selected-area diffraction...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006671
EISBN: 978-1-62708-213-6
..., optical emission spectroscopy; OM, optical metallography; RBS, Rutherford backscattering spectrometry; RS, Raman spectroscopy; SEM, scanning electron microscopy; SIMS, secondary ion mass spectroscopy, SSMS, spark source mass spectrometry; TEM, transmission electron microscopy; XPS, x-ray photoelectron...
Series: ASM Handbook Archive
Volume: 10
Publisher: ASM International
Published: 01 January 1986
DOI: 10.31399/asm.hb.v10.a0001726
EISBN: 978-1-62708-178-8
... spectroscopy MFS Molecular fluorescence spectroscopy NAA Neutron activation analysis NMR Nuclear magnetic resonance OES Optical emission spectroscopy OM Optical metallography RBS Rutherford backscattering spectrometry RS Raman spectroscopy SAXS Small-angle x-ray scattering...
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001301
EISBN: 978-1-62708-170-2
... surface analysis methods, namely, Auger electron spectroscopy, X-ray photoelectron spectroscopy, ion scattering spectroscopy, secondary ion mass spectroscopy, and Rutherford backscattering spectroscopy. It also provides useful information on the applications of surface analysis. Auger electron...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006666
EISBN: 978-1-62708-213-6
.... Materials Science in the Semiconductor Industry This area was considered intensively in the first few years of the development of PIXE. An important advantage is that many of the laboratories conducting these analyses possess a particle accelerator for the Rutherford backscattering spectrometry...
Series: ASM Handbook Archive
Volume: 10
Publisher: ASM International
Published: 01 January 1986
DOI: 10.31399/asm.hb.v10.a0001734
EISBN: 978-1-62708-178-8
... for the Rutherford backscattering spectrometry (RBS) of layered semiconductor structures. Almost all such laboratories use PIXE, but it has not become the mainstay that had been predicted. One reason is that depth information is difficult to obtain from PIXE, but is essential to the semiconductor industry...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006683
EISBN: 978-1-62708-213-6
... measured independently using optical techniques or Rutherford backscattering spectrometry. In this case, it must be assumed that the sputtering rate of the film is the same as that of the specimen. Therefore, the use of oxide or metallic films to determine sputtering rates of bulk materials, even...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006628
EISBN: 978-1-62708-213-6
... was collected with a 127° electrostatic analyzer ( Ref 4 ). By the late 1970s, scientists had realized that the primary ion-scattering techniques were Rutherford backscattering spectroscopy (RBS) in the megaelectron volt range, medium-energy ion scattering spectroscopy (MEIS) in the 100 keV range, and LEIS...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006748
EISBN: 978-1-62708-213-6
... the sample is excited in the sources used for emission spectroscopy and absorption contrast. In transmission electron aliquot. A representative sample of a larger spark source mass spectrometry. microscopy, image contrast caused by dif- quantity. ferences in absorption within a sample due analytical line...
Series: ASM Handbook
Volume: 10
Publisher: ASM International
Published: 15 December 2019
DOI: 10.31399/asm.hb.v10.a0006670
EISBN: 978-1-62708-213-6
...; SIMS: secondary ion mass spectroscopy; RBS: Rutherford backscattering spectrometry; XPS: x-ray photoelectron spectroscopy; AFM: atomic force microscopy; EFM: electrostatic force microscopy; SCM: scanning capacitance microscopy; NIM: nanoimpedance microscopy; LEED: low-energy electron diffraction; RHEED...