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Series: ASM Handbook
Volume: 13A
Publisher: ASM International
Published: 01 January 2003
DOI: 10.31399/asm.hb.v13a.a0003589
EISBN: 978-1-62708-182-5
... of amorphous and epitaxy oxide layers and presents equations for various oxidation reaction rates. The article reviews different theories to describe the oxidation mechanism. These include the Cabrera-Mott, Hauffe-IIschner, Grimley-Trapnell, Uhlig, and Wagner theories. Schottky defect Frenkel defect...
Abstract
This article describes the Schottky defect and the Frenkel defect in oxides. It provides information on the p-type metal-deficit oxides and n-type semiconductor oxides. The article discusses diffusion mechanisms and laws of diffusion proposed by Fick. It explains the oxide texture of amorphous and epitaxy oxide layers and presents equations for various oxidation reaction rates. The article reviews different theories to describe the oxidation mechanism. These include the Cabrera-Mott, Hauffe-IIschner, Grimley-Trapnell, Uhlig, and Wagner theories.