This article presents the principles of chemical vapor deposition (CVD) with illustrations. It discusses the types of CVD processes, namely, thermal CVD, plasma CVD, laser CVD, closed-reactor CVD, chemical vapor infiltration, and metal-organic CVD. The article reviews the CVD reactions of materials related to hard, tribological, and high-temperature coatings and to free-standing structures. It concludes by reviewing the advantages, disadvantages, and applications of CVD.

This article describes the vapor-phase growth techniques applied to the epitaxial deposition of semiconductor films and discusses the fundamental processes involved in metal-organic chemical vapor deposition (MOCVD). It reviews the thermodynamics that determine the driving force behind the overall growth process and the kinetics that define the rates at which the various processes occur. The article provides information on the reactor systems and hardware, MOCVD starting materials, engineering considerations that optimize growth, and the growth parameters for a variety of Group III-V, II-VI, and IV semiconductors.