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Book Chapter
Book: Alloy Phase Diagrams
Series: ASM Handbook
Volume: 3
Publisher: ASM International
Published: 27 April 2016
DOI: 10.31399/asm.hb.v03.a0006292
EISBN: 978-1-62708-163-4
Abstract
This article defines crystallographic terms and concepts, including crystal structure, unit cell, structure symbols, lattice, space-group notation, and atom position. It schematically illustrates the atom positions, prototypes, structure symbols, space-group notations, and lattice parameters for some of the simple metallic crystals. A table that lists the crystal structures of various metal elements is presented. The crystal structures are described by the Pearson symbols for crystal system, space lattice, total number of atoms per unit cell, and prototype structure. The article tabulates the assorted structure types of metallurgical interest arranged according to Pearson symbol. It also provides information on crystal defects, explaining some significant ones, such as point defects, line defects, stacking faults, and twins.
Series: ASM Handbook
Volume: 23
Publisher: ASM International
Published: 01 June 2012
DOI: 10.31399/asm.hb.v23.a0005669
EISBN: 978-1-62708-198-6
Abstract
This article reviews the concepts considered important for an understanding of the processes used for preparing cobalt-chromium alloy implants, the microstructures resulting from this processing, and the resulting material properties. The review includes solidification of alloys, diffusionless (martensitic) phase transformation as occurs with face-centered cubic to hexagonal close-packed transformation in cobalt-chromium alloys, and stacking faults and twins and their role in this transformation. It also discusses the strengthening mechanisms that are responsible for the mechanical properties of cast and wrought cobalt alloys. The article contains tables that list the commonly used cobalt alloys and their biomedical applications and chemical compositions. It discusses the mechanical and corrosion properties of cobalt alloys, and provides a description of the microstructure of cobalt alloys.
Book Chapter
Series: ASM Handbook
Volume: 9
Publisher: ASM International
Published: 01 December 2004
DOI: 10.31399/asm.hb.v09.a0003722
EISBN: 978-1-62708-177-1
Abstract
This article describes crystallographic terms and concepts and illustrates various crystal structures. The crystallographic terms described include crystal structure, unit cell, crystal system, lattice, structure symbols, space-group notation, structure prototype, atom positions, point groups, and equivalent positions. The article presents a table of assorted structure types of metallurgical interest arranged according to the Pearson symbol. It also schematically illustrates atom positions, prototypes, structure symbols, space-group notations, and lattice parameters for some of the simple metallic crystals. The article concludes with a description of some of the most significant crystal defects such as point defects, line defects, and stacking faults.
Series: ASM Handbook
Volume: 13A
Publisher: ASM International
Published: 01 January 2003
DOI: 10.31399/asm.hb.v13a.a0003589
EISBN: 978-1-62708-182-5
Abstract
This article describes the Schottky defect and the Frenkel defect in oxides. It provides information on the p-type metal-deficit oxides and n-type semiconductor oxides. The article discusses diffusion mechanisms and laws of diffusion proposed by Fick. It explains the oxide texture of amorphous and epitaxy oxide layers and presents equations for various oxidation reaction rates. The article reviews different theories to describe the oxidation mechanism. These include the Cabrera-Mott, Hauffe-IIschner, Grimley-Trapnell, Uhlig, and Wagner theories.
Book: Surface Engineering
Series: ASM Handbook
Volume: 5
Publisher: ASM International
Published: 01 January 1994
DOI: 10.31399/asm.hb.v05.a0001286
EISBN: 978-1-62708-170-2
Abstract
This article describes eight stages of the atomistic film growth: vaporization of the material, transport of the material to the substrate, condensation and nucleation of the atoms, nuclei growth, interface formation, film growth, changes in structure during the deposition, and postdeposition changes. It also discusses the effects and causes of growth-related properties of films deposited by physical vapor deposition processes, including residual film stress, density, and adhesion.
Series: ASM Handbook Archive
Volume: 10
Publisher: ASM International
Published: 01 January 1986
DOI: 10.31399/asm.hb.v10.a0001772
EISBN: 978-1-62708-178-8
Abstract
Field ion microscopy (FIM) can be used to study the three-dimensional structure of materials, such as metals and semiconductors, because successive atom layers can be ionized and removed from the surface by field evaporation. The ions removed from the surface by field evaporation can be analyzed chemically by coupling to the microscope a time-of-flight mass spectrometer of single-particle sensitivity, known as the atom probe (AP). This article describes the principles, sample preparation, and quantitative analysis of FIM. It also provides information on the principles, instrument design and operation, mass spectra and their interpretation, and applications of AP microanalysis.