Surface Engineering
Chemical Vapor Deposition of Semiconductor Materials
-
Published:1994
Abstract
This article describes the vapor-phase growth techniques applied to the epitaxial deposition of semiconductor films and discusses the fundamental processes involved in metal-organic chemical vapor deposition (MOCVD). It reviews the thermodynamics that determine the driving force behind the overall growth process and the kinetics that define the rates at which the various processes occur. The article provides information on the reactor systems and hardware, MOCVD starting materials, engineering considerations that optimize growth, and the growth parameters for a variety of Group III-V, II-VI, and IV semiconductors.
Sign in
ASM members
Member Sign InManijeh Razeghi, Chemical Vapor Deposition of Semiconductor Materials, Surface Engineering, Vol 5, ASM Handbook, Edited By C.M. Cotell, J.A. Sprague, F.A. Smidt, Jr., ASM International, 1994, p 517–531, https://doi.org/10.31399/asm.hb.v05.a0001284
Download citation file:
Close
ASM INTERNATIONAL
FALL / WINTER 2020 CATALOG
View the new, upcoming, and best-selling resources in ASM Handbooks, technical books, and databases in the Fall / Winter 2020 Catalog.