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Abstract

Ion implantation involves the bombardment of a solid material with medium-to-high-energy ionized atoms and offers the ability to alloy virtually any elemental species into the near-surface region of any substrate. This article describes the fundamentals of the ion implantation process and discusses the advantages, limitations, and applications of ion implantation. It also reviews a typical medium current semiconductor implanter adapted for implantation of metals with the aid of illustrations.

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James K. Hirvonen, Bruce D. Sartwell, Ion Implantation, Surface Engineering, Vol 5, ASM Handbook, Edited By C.M. Cotell, J.A. Sprague, F.A. Smidt, Jr., ASM International, 1994, p 605–610, https://doi.org/10.31399/asm.hb.v05.a0001292

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