In secondary ion mass spectroscopy (SIMS), an energetic beam of focused ions is directed at the sample surface in a high or ultrahigh vacuum (UHV) environment. The transfer of momentum from the impinging primary ions to the sample surface causes sputtering of surface atoms and molecules. This article focuses on the principles and applications of high sputter rate dynamic SIMS for depth profiling and bulk impurity analysis. It provides information on broad-beam instruments, ion microprobes, and ion microscopes, detailing their system components with illustrations. The article graphically illustrates the SIMS spectra and depth profiles of various materials. The quantitative analysis of ion-implantation profiles, instrumental features required for secondary ion imaging, the analysis of nonmetallic samples, detection sensitivity, and the applications of SIMS are also discussed.
Carlo G. Pantano, Secondary Ion Mass Spectroscopy, Materials Characterization, Vol 10, Edited By Ruth E. Whan, ASM International, 1986, p 610–627, https://doi.org/10.31399/asm.hb.v10.a0001774
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