1-20 of 113 Search Results for

yield modeling

Follow your search
Access your saved searches in your account

Would you like to receive an alert when new items match your search?
Close Modal
Sort by
Journal Articles
EDFA Technical Articles (2018) 20 (3): 4–7.
Published: 01 August 2018
...John Hopkins The ratio of good to bad die on a production wafer can range from less than 10% to well over 90%, depending on the process and the complexity of the design. This article provides an overview of the modeling approaches used to predict wafer yield. It explains how to account for relative...
Journal Articles
EDFA Technical Articles (2007) 9 (1): 6–13.
Published: 01 February 2007
...Payman Zarkesh-Ha; Ken Doniger Layout sensitivity, a measure of vulnerability to yield loss, typically takes several days to compute for a modern VLSI design. In this article, the authors present and demonstrate a new stochastic model that can significantly expedite the process. The model is based...
Journal Articles
EDFA Technical Articles (2000) 2 (3): 1–10.
Published: 01 August 2000
... the bubble, the more burn-in failures at that location. Edge dies have higher failure rates than center3. NEWS DISCUSSION www.edfas.org EVENTS TRAINING Roadmaps Roadmaps, continued Reliability versus Yield Model A well-designed process and product should not have intrinsic wearout failure mechanisms...
Journal Articles
EDFA Technical Articles (2014) 16 (3): 4–12.
Published: 01 August 2014
...-Optics Society (LEOS) 2003, The 16th Annual References Meeting of the IEEE, 2003, 2, pp. 662-63. 1. N.H. Ramadan: Redundancy Yield Model for SRAMS, Intel Technol. J., 1997, Q4, pp. 1-8. 7. S.H. Goh et al.: Evolution of Wafer Level Tester-Based Diagnostic System: More than Just a Dynamic Electrical...
Journal Articles
EDFA Technical Articles (2021) 23 (3): 8–12.
Published: 01 August 2021
..., the Simsides model assumes an unlimited gain and assumes a lower noise floor as a result. This has the effect that the real SNR is limited at 59 dB. Equation 1 yields an effective resolution of 9 bit. The second main difference between the full-schematic and the system model is the occurrence of higher...
Journal Articles
EDFA Technical Articles (2001) 3 (3): 7–11.
Published: 01 August 2001
...-Based Failure Analysis Part 1: Fault Models Robert C. Aitken Agilent Technologies rob_aitken@agilent.com Introduction Failure analysis (FA) is vital to integrated circuit (IC) design and manufacturing. FA identifies root cause defects for yield improvement, finds design flaws that hinder circuit...
Journal Articles
EDFA Technical Articles (2014) 16 (2): 46–47.
Published: 01 May 2014
...Benjamin Cipriany This column suggests that developing 3D structural models as tools for observing and exploring failures in the virtual domain could prove instrumental in avoiding failure without committing hardware. Likewise, instead of building hardware to systematically evaluate failures...
Journal Articles
EDFA Technical Articles (2009) 11 (3): 14–19.
Published: 01 August 2009
... analysis (also known as yield analysis, or YA) and the fault isolation/failure analysis (FI/FA) labs. The role of YAin RCAis to study the affected material thoroughly, use its characteristics to define a metric that is unique to the problem (this facilitates distinguishing between related and unrelated...
Journal Articles
EDFA Technical Articles (2003) 5 (2): 17–22.
Published: 01 May 2003
... process for KPI and target setting of FA lab logistics. This transparent model should yield a more exact target agreement with the customer, implement a job steering process, allow better control with a KPI report, and introduce high tech service providers to target tracking and balanced score cards...
Journal Articles
EDFA Technical Articles (2019) 21 (1): 4–9.
Published: 01 February 2019
... and sustain semiconductor quality and yield. A growing source of quality and yield problems stems from the effect of process variability on standard cells, which introduces new transistor-level defect modes. Meanwhile, the cost of traditional failure analysis (FA) continues to skyrocket. This article details...
Journal Articles
EDFA Technical Articles (2018) 20 (3): 54–55.
Published: 01 August 2018
... to dive in. However, understanding the recent enhancements of EDA tools from a high level may help PFA engineers achieve their targets more effectively and efficiently. Among the recent enhancements in EDA diagnostic and yield learning tools are artificial intelligence (AI) technologies such as machine...
Journal Articles
EDFA Technical Articles (2010) 12 (3): 10–18.
Published: 01 August 2010
... experimental investigation along with modeling and simulation. It was found that the TIVA profiles on this structure are strongly influenced by local geometry, particularly the variation of interlevel silicon dioxide thickness and the placement of polysilicon lines with respect to aluminum lines. Understanding...
Journal Articles
EDFA Technical Articles (2017) 19 (4): 12–20.
Published: 01 November 2017
... cone-shaped model, confirming that using an AFM probe as an electrode for nanoscale C-V curves is different from those acquired with parallel-plate geometry but has similar potential for yielding quantitative characterizations. This article also shows that C-V curves can be measured from doped...
Journal Articles
EDFA Technical Articles (2017) 19 (3): 22–27.
Published: 01 August 2017
...-scale tip and semiconductor sample, it is possible to show that the complex part of the impedance will be linearly related to the capacitance of the sample.[10,11] It is therefore of key importance to understand the relationship between spatial dopant variation and sample capacitance. MODELING CONTRAST...
Journal Articles
EDFA Technical Articles (2008) 10 (3): 46–48.
Published: 01 August 2008
.../foundry model, it is common for the foundry to manage the product flow through the subcontractor assembly and test (SAT) suppliers. This can cause problems in multichip packages when the chips are from different foundries and the foundry cannot resolve yield issues caused by interactions between the chips...
Journal Articles
EDFA Technical Articles (2004) 6 (2): 6–11.
Published: 01 May 2004
... interested in this business is few, and their interest fluctuates with market conditions. As a result, the ASICs must be designed so they can be ported to multiple foundries and, on occasion, to different process technologies. Each foundry or process technology provides a unique set of model parameters...
Journal Articles
EDFA Technical Articles (2008) 10 (2): 42–44.
Published: 01 May 2008
... of a new labless scenario whereby companies will be able to outsource their FA work. inception of the IDS 5000 in 1985, approximately 40 There is more to this labless scenario than a mere laser voltage probes covered the flip-chip probing comparison with the fabless model. In an excellent needs of less...
Journal Articles
EDFA Technical Articles (2002) 4 (3): 11–14.
Published: 01 August 2002
... fabricated, the sacrificial as the mechanical or oxide is etched away moving component of using hydrofluoric acid the device. Springs sus- (HF) to yield a released pend the shuttle above a sample. Some MEMS ground plane, pro- devices are also fab- viding an electrical ricated directly over or ground...
Journal Articles
EDFA Technical Articles (2005) 7 (2): 6–12.
Published: 01 May 2005
...Peter Jacob; Joachim Reiner A string of failures discovered during final testing after assembly led analysts on a long search for the cause, which turned out to be an unusual form of electrostatic discharge (ESD). Most ESD impacts on ICs occur by way of the pins. Nearly all ESD models, including...
Journal Articles
EDFA Technical Articles (2009) 11 (3): 46–47.
Published: 01 August 2009
... ago, every FA lab had all the systems they needed, but then along came the Center of Excellence model, which meant that outlying FA labs received fewer systems, until they were eventually shut down or moved to the Far East. (In 2009, Analog Devices closed their California FA lab and sent...