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temperature measurements

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Journal Articles
EDFA Technical Articles (2009) 11 (4): 6–12.
Published: 01 November 2009
...R. Aaron Falk; Tram Pham Virtually all semiconductor materials exhibit Raman scattering which results in a frequency shift in photon energy. In this article, the authors explain how they harness this mechanism to measure the temperature of submicron structures and thereby produce high-resolution...
Journal Articles
EDFA Technical Articles (2019) 21 (2): 10–14.
Published: 01 May 2019
...Bertrand Boudart; Yannick Guhel This article describes a new technique for measuring temperatures in GaN HEMTs. The method is based on Raman spectroscopy and the use of cerium oxide particles that act like micro-Raman thermometers when scanned with a UV laser. As the article explains, phonon line...
Journal Articles
EDFA Technical Articles (2000) 2 (2): 12–24.
Published: 01 May 2000
... and temperature conditions. Analysis of failure data identified apparent acceleration with voltage and temperature. Measurement of the capacitors after electrical stress testing found a polarity sensitivity. They would conduct in one polarity and block in the opposite polarity. When stressed with one polarity...
Journal Articles
EDFA Technical Articles (2019) 21 (1): 20–25.
Published: 01 February 2019
... the beginning of the applied step bias pulse. From this plot, thermal impedance of the various layers in the heat flow path can be quantified. Fig. 7 Comparison of MMIC gate temperatures measured using IRT and TTI, with gate tempertures calculated using finite element analysis. edfas.org EXAMPLES: APPLICATIONS...
Journal Articles
EDFA Technical Articles (1999) 1 (2): 7–10.
Published: 01 May 1999
...) offers a better solution because it can cool and heat. Detection requires only a few degrees rise in temperature. Precise temperature control is necessary, but precise temperature measurement is not. The liquid crystal is its own best temperature indicator. A switch that varies the power delivered...
Journal Articles
EDFA Technical Articles (2014) 16 (2): 4–16.
Published: 01 May 2014
... and the factors that contribute to gas generation. This article presents a new technique for monitoring the health of lithium-ion cells. Whereas traditional methods use current, voltage, and temperature data to infer the overall health of the cell, the new method uses ultrasonic measurements to assess...
Journal Articles
EDFA Technical Articles (2005) 7 (3): 14–21.
Published: 01 August 2005
... differently. Light emission associated with leakage current is a rich source of information about the operation of ICs. In this article, the authors explain how they use this light to monitor logic states, measure temperatures, analyze cross-talk and power distribution noise, and diagnose broken scan chains...
Journal Articles
EDFA Technical Articles (2013) 15 (1): 12–22.
Published: 01 February 2013
... is placed on a vibration isolation bed. With this technique, as outlined in Ref 5 and 6, thermoreflectance imaging is based on detecting the intensity of light reflected from the sample and measuring the reflectance change due to temperature variation. To commercialize the two-dimensional thermal mapping...
Journal Articles
EDFA Technical Articles (2013) 15 (4): 22–25.
Published: 01 November 2013
... assesses the bond between metals and molding compounds as a measure of thermal cycle resistance. A button shear test is used to measure changes in adhesion strength as a function of time and temperature. This article describes two accelerated reliability tests that can help shorten product development...
Journal Articles
EDFA Technical Articles (2022) 24 (1): 29–32.
Published: 01 February 2022
... density, ac noise, and local temperature variations. This article describes the basic measurement physics of scanning nitrogen vacancy (NV) microscopy and the various ways it can be used in semiconductor device failure analysis. Scanning NV microscopy can measure topography as well as magnetic fields...
Journal Articles
EDFA Technical Articles (1999) 1 (2): 1–20.
Published: 01 May 1999
... at a tip-sample separation of several angstroms. The use- with a second measurement technique (e.g. a thermocouple attached to the tip) to obtain information such as semicon- ductor doping, temperature, or Fowler-Nordheim tunneling current distributions. fulness of STM is limited particularly for analyzing...
Journal Articles
EDFA Technical Articles (2011) 13 (3): 4–11.
Published: 01 August 2011
...Michael Hertl; Diane Weidmann Electronic components and assemblies are subjected to temperature variations at every stage of life, resulting in the buildup of internal stress. This article explains how such stress contributes to failures and introduces a measurement technique that allows users...
Journal Articles
EDFA Technical Articles (2018) 20 (3): 10–16.
Published: 01 August 2018
...Fred Schipp Counterfeiting continues to be a concern in the electronics industry, particularly for microprocessors, memory chips, and high temperature range ICs. This article provides an understanding of the extent of the problem, identifies frequently copied parts, and proposes measures to help...
Journal Articles
EDFA Technical Articles (2023) 25 (1): 9–13.
Published: 01 February 2023
... and an ultra-high vacuum option. The ability to measure the electrical properties of materials at varying temperatures has led to many discoveries such as superconductivity, quantum hall effect, fractional quantum hall effect, giant magnetoresistance, and graphene. Quantum computing research is also benefiting...
Journal Articles
EDFA Technical Articles (2022) 24 (4): 34–38.
Published: 01 November 2022
... different temperatures and the union of the two at a completely different temperature. This ensures that there will never be a relaxed state where the die surface is flat and stable. MEASURING THE INITIAL PROFILE It is assumed that the starting silicon thickness variation is zero. Therefore, the measured...
Journal Articles
EDFA Technical Articles (2015) 17 (3): 20–28.
Published: 01 August 2015
...Kirk A. Martin This article, the first in a two-part series, discusses the challenges of thinning highly warped die and explains how they can be overcome with contour machining driven by thickness measurements. The machine that was used measures die surface profiles in situ, producing a wire frame...
Journal Articles
EDFA Technical Articles (2021) 23 (1): 22–28.
Published: 01 February 2021
... that C137 was hot, about 37°C (Fig. 4). This elevated temperature above lab ambient was considered abnormal for a multilayer ceramic capacitor and it gave enough confidence to assume C137 has an issue. After C137 was removed from the circuit board, the 12 V power rail was measured again by multimeter...
Journal Articles
EDFA Technical Articles (2022) 24 (4): 12–21.
Published: 01 November 2022
... in approximately five years of artificial aging. For a more realistic analysis, these FPGA LUTs were programmed during the aging process. These circuit boards were taken out of the temperature-controlled chamber every 1, 2, 4, 8, 16, 32, 64, and 128 hours to measure the fingerprints at nominal conditions. For each...
Journal Articles
EDFA Technical Articles (2010) 12 (3): 44–47.
Published: 01 August 2010
...: Raman Temperature Measurements, Electron. Device Fail. Anal., 2009, 11(4) About the Author R. Aaron Falk received a Ph.D. in physics from the University of Washington in 1979, followed by postdoctoral work at the Joint Institute for Laboratory Astrophysics in Boulder, Colo. He was with Ball Aerospace...
Journal Articles
EDFA Technical Articles (2010) 12 (3): 10–18.
Published: 01 August 2010
... line was ~30 , and the typical current and voltage during TIVA measurements were 50 mA and 1.5 V. The resistance of the polysilicon line was ~17,000 , and the typical current and voltage were 0.8 mA and 13.6 V. As the focused laser beam scanned across the test structure, temperature increased due...