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1-9 of 9 Search Results for
systematic yield loss
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Journal Articles
EDFA Technical Articles (2018) 20 (3): 4–7.
Published: 01 August 2018
... circuit complexity, systematic and random defects, and defect clustering. As the examples in the article show, with just a basic understanding of yield models, readers can estimate expected yield losses and identify abnormal yield results for a given design. Copyright © ASM International® 2018 2018...
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The ratio of good to bad die on a production wafer can range from less than 10% to well over 90%, depending on the process and the complexity of the design. This article provides an overview of the modeling approaches used to predict wafer yield. It explains how to account for relative circuit complexity, systematic and random defects, and defect clustering. As the examples in the article show, with just a basic understanding of yield models, readers can estimate expected yield losses and identify abnormal yield results for a given design.
Journal Articles
EDFA Technical Articles (2019) 21 (1): 4–9.
Published: 01 February 2019
..., complementary FET, and others. This implies that more defects and systematic yield issues are expected in the front-end layers that are inside library cells. We can expect an increase in the number of defects only caught at the end-of-line during final test of manufactured die. This will occur despite all...
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This article presents a recent breakthrough in the use of machine learning in semiconductor FA. For the first time, cell-internal defects in FinFETs have not only been detected and diagnosed, but also refined, clarified, and resolved using cell-aware diagnosis along with root cause deconvolution (RCD) techniques. The authors describe the development of the methodology and evaluate the incremental improvements made with each step.
Journal Articles
EDFA Technical Articles (2014) 16 (3): 4–12.
Published: 01 August 2014
... circuits against expected responses after structural testing to predict failure suspects.[3] In addition to confidence score and suspected fail path length, a second step, known as volume statistical analysis, searches for systematics and assesses the potential yield impact for FA prioritization. Some...
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This article describes a yield-driven approach for characterizing IC logic failures at the wafer level and presents several case studies to demonstrate its versatility and assess its value.
Journal Articles
EDFA Technical Articles (2013) 15 (1): 35–36.
Published: 01 February 2013
... a multitude of details. IC circuitry and electrical failure isolation steps were necessarily bypassed. Physical analysis alone detected and isolated the process step that was causing yield loss. Summary Three papers in the Case Histories I session were discussed from the viewpoint of problem solving. However...
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One of the co-chairs of the Case Histories sessions at ISTFA 2012 provides a summary of three papers that demonstrate a solid understanding of the semiconductor FA process. The first paper describes the investigation of fractures in PCB traces, the second paper presents a method for analyzing defects due to implanter charging effects, and the third paper explains how analysts determined the cause of automatic test pattern generation failures concentrated in certain areas of the wafer.
Journal Articles
EDFA Technical Articles (2007) 9 (3): 6–16.
Published: 01 August 2007
... processes and even indicate which metal layer and specific design feature is at fault in many cases. Design Changes for Improved Yield With each process node below 130 nm, design features are responsible for an increasing amount of yield loss. During the design process, great care is taken to ensure...
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Scan-logic diagnosis is used in industry for three main purposes: root-cause analysis, improving manufacturing processes, and improving designs. This article reviews the principles of scan-logic diagnosis and its applications in each of the three areas. It also discusses ongoing challenges and emerging approaches.
Journal Articles
EDFA Technical Articles (2012) 14 (3): 4–11.
Published: 01 August 2012
... 7 3-D SiP (continued from page 7) identified during the product life cycle, the bigger its negative impact on a company s business. Quality problems that result in field returns mean loss of yield, loss of positive image, maybe the loss of repeat business or the customer, and thus a tremendous...
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It seems that scaling of chip technology according to Moore’s Law will continue for digital functionalities (logic and memory); however, increasing system integration on chip and package levels, called “More than Moore,” has been observed in the past several years. This strong trend in the worldwide semiconductor industry enables more functionality, diversification, and higher value by creating smart microsystems. This article discusses the many challenges faced in FA of 3-D chips, where well-staffed and equipped FA labs are essential. Furthermore, FA is becoming an important strategic enabling factor for new products, not just another “cost factor.”
Journal Articles
EDFA Technical Articles (2004) 6 (1): 13–21.
Published: 01 February 2004
... useful in this charactoo high can cause state loss. Briefly, state loss occurs terization but is limited by the difficulty of achieving when the off or total leakage current of the tran- complete coverage. As mentioned earlier, precharged sistors holding a state node exceeds that of the on (domino...
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ICs designed for portable devices often make use of reverse-body bias (RBB) modes to limit leakage currents. The added complexity of RBB support circuitry presents a challenge during IC characterization and debug. This article discusses the nature of the problem and explains how to identify irregularities in circuits operating in the body-biased condition using standard debug tools with simple modifications. It describes some of the bugs discovered in an actual examination and explains how they were diagnosed by analyzing I-V curve traces and infrared emission microscopy (IREM) images.
Journal Articles
EDFA Technical Articles (2010) 12 (2): 12–18.
Published: 01 May 2010
... layer information as well, such as via type or cell type. Evaluating this information from a large number of dies in a statistical analysis process derives information on possible commonalities, that is, a systematic yield problem. In this sense, the layoutaware defect-bounding boxes are a cornerstone...
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This case study compares the FA success rate and turn-around time of traditional logic-only and true layout-aware scan diagnosis. It discusses the basic process flow, identifies key success factors, and evaluates physical FA and diagnostic test results obtained from six dies randomly selected from a 9.8 M-gate, seven-metal-layer ASIC manufactured in 90 nm technology. As shown, layout-aware diagnosis reduces the defect search area on the die, in some cases, by an order of magnitude, providing the means to diagnosis-driven yield improvements.
Journal Articles
EDFA Technical Articles (2014) 16 (4): 4–12.
Published: 01 November 2014
... yield loss. Identifying cause is the only goal. Unlike FA, device history and associated process data are always available and fully utilized. References 1. P. Jacobs: EOS (Electrical Overstress) The Old, Unknown Phenomena? Int. Symp. Test. Fail. Anal. (ISTFA), 2012, pp. 156-63. 2. M. Gores: Mis...
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The tools of the trade in semiconductor failure analysis have advanced rapidly over the past few decades, bringing major improvements in imaging, deprocessing, and materials analysis. In contrast to the progress made in physical FA, little attention has been given to the failure analysis process itself. This article shows through case studies how simple oversights and misunderstandings can lead to costly mistakes. It also defines basic FA concepts and presents a failure analysis sequence, describing each step along with common pitfalls and best practices.