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single contact optical beam induced currents

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Journal Articles
Publisher: Journals Gateway
EDFA Technical Articles (2001) 3 (4): 29–35.
Published: 01 November 2001
...J.M. Chin; M. Palaniappan; J.C.H. Phang; D.S.H. Chan; G. Gilfeather Single contact optical beam induced currents (SCOBIC) is a variation on the OBIC failure analysis technique that requires only one point of contact with the junction being examined. This article discusses the basic principles...
Journal Articles
Publisher: Journals Gateway
EDFA Technical Articles (2010) 12 (3): 44–47.
Published: 01 August 2010
..., Electron. Device Fail. Anal., 2003, 5(4) 4. J.M. Chin et al.: Single Contact Optical Beam Induced Currents (SCOBIC) Technique and Applications, Electron. Device Fail. Anal., 2001, 3(4) 5. R. Clark et al.: Advanced Fault Isolation Techniques, Electron. Device Fail. Anal. News, 1999, 1(3) 6. E.I. Cole...
Journal Articles
Publisher: Journals Gateway
EDFA Technical Articles (2008) 10 (2): 12–18.
Published: 01 May 2008
..., XIVA, and single-contact optical beam induced current, or SCOBIC) for SOM probes that are used to locate a wide range of failure types (e.g., ohmic shorts, substrate damage, opens, leakage current). Although the electrical bias and sensing can be applied to any pins, application of bias to the power...
Journal Articles
Publisher: Journals Gateway
EDFA Technical Articles (2003) 5 (4): 13–24.
Published: 01 November 2003
... in Interferometric sensitivity was added later.32 A typical the SDL image were from a weak link in a serial path. waveform is shown in Fig. 7, which was acquired Single-Contact Optical Beam Induced Current through the backside on a flip-chip microprocessor, and it compares a good unit to a bad unit. Note that units...
Journal Articles
Publisher: Journals Gateway
EDFA Technical Articles (2015) 17 (1): 53–55.
Published: 01 February 2015
...., Sandia National Laboratories, University of New 2001 Techniques, p 42-50 Mexico, and AMD: Resistive Interconnect Localization Complexity Yes Advanced M. Palaniappan et al., AMD and National University of Techniques, p 17-24 Singapore: Applications of Single Contact Optical Beam Induced Currents...
Journal Articles
Publisher: Journals Gateway
EDFA Technical Articles (2010) 12 (3): 20–27.
Published: 01 August 2010
... of a single metal-line structure at 100 µA biasing current. At the same biasing current and laser power, Fig. 4(b) shows significant signal enhancement when the digital lockin detection algorithm is implemented at a pulsing frequency of 1.28 kHz. Induced signals from the bond pads and neighboring bond wires...
Journal Articles
Publisher: Journals Gateway
EDFA Technical Articles (2003) 5 (4): 27–32.
Published: 01 November 2003
... Electroluminescence images of a degraded VCSEL (a) below threshold and (b) above threshold Volume 5, No. 4 Electronic Device Failure Analysis 29 Optoelectronic Device Failure Analysis (continued) Electron beam induced current (EBIC) analysis has been an important technique for optoelectronic device failure analysis...
Journal Articles
Publisher: Journals Gateway
EDFA Technical Articles (2009) 11 (2): 16–22.
Published: 01 May 2009
...Takeshi Nokuo; Hitoshi Furuya This article discusses the advantages of SEM-based nanoprobing and the various ways it can be used to locate defects associated with IC failures. It describes the basic measurement physics of electron beam induced current, absorbed electron, and voltage distribution...
Journal Articles
Publisher: Journals Gateway
EDFA Technical Articles (2007) 9 (4): 22–25.
Published: 01 November 2007
... beam on a Strata 400 (FEI Company, Hillsboro, Ore.) dual-beam FIB. The conditions of the electron beam were relatively low current compared to traditional single-beam SEMs. For this study, an electron beam current of ~0.5 nA was used with varying acceleration voltage. All samples were exposed under...
Journal Articles
Publisher: Journals Gateway
EDFA Technical Articles (2015) 17 (1): 33–37.
Published: 01 February 2015
...-induced voltage alteration, or optical beam-induced resistance change. The final example was to extract hundreds of thousands of waveforms from a device automatically, which can then be used to reveal connections between logic cells and functional blocks. Can we trust our hardware? An example is a Trojan...
Journal Articles
Publisher: Journals Gateway
EDFA Technical Articles (2010) 12 (2): 20–28.
Published: 01 May 2010
..., Omniprobe, Inc.) to create and manipulate nanostructures used in MEMS and nanowire development and characterization. The two presentations that followed focused on high-speed milling for large-structure FA applications using a high-current/high-gas-flux gallium ion beam (Chad Rue, FEI Company) and a high...
Journal Articles
Publisher: Journals Gateway
EDFA Technical Articles (2020) 22 (1): 14–19.
Published: 01 February 2020
... on the nature and location of the defect. Focused ion beam techniques are effective for cross-section sample preparation over micron squared sized areas, but fall short because large delamination, multiple defects over a large distance, and large metallic puddling cannot be exposed by a single cross section...
Journal Articles
Publisher: Journals Gateway
EDFA Technical Articles (1999) 1 (3): 6–17.
Published: 01 August 1999
..., appropriately, on the back page of the newsletter). Since doped silicon is partially transparent to IR photons with sub band energies (< 1.1 eV), the light can be focused through the substrate onto P-N Junctions. The small opto-electronic interactions that occur between a focused IR optical beam...
Journal Articles
Publisher: Journals Gateway
EDFA Technical Articles (2018) 20 (3): 24–33.
Published: 01 August 2018
... When imaging the sample, the electron beam will penetrate the sample surface where it can interact with the conducting lines in the device layers. When using probe tips strategically placed on contacts on the sample surface, combined with a highly sensitive amplifier, these induced currents can...
Journal Articles
Publisher: Journals Gateway
EDFA Technical Articles (2002) 4 (4): 29–33.
Published: 01 November 2002
... the simultaneous collection of Z-contrast, EBIC, and energy dispersive spectroscopy images. The relative position of the pn junction with respect to the quantum well was found to be 19 ± 3 nm from the center of well. Copyright © ASM International® 2002 2002 ASM International electron beam induced current...
Journal Articles
Publisher: Journals Gateway
EDFA Technical Articles (2018) 20 (2): 18–24.
Published: 01 May 2018
... are not effective for these types of failures. Consequently, more detailed fault isolation work is required prior to starting destructive physical failure analysis. Many diagnostic techniques such as photon emission microscopy (PEM6,7] thermally induced voltage alteration (TIVA8,9,10] optical beam induced...
Journal Articles
Publisher: Journals Gateway
EDFA Technical Articles (2006) 8 (2): 14–20.
Published: 01 May 2006
... result as (X,Y) coordinates. On the other hand, for test structure analyses one must turn to specific fault isolation methods, such as voltage contrast, laser stimulation (optical beam induced resistance change, or OBIRCH), or Seebeck imaging. The physical characterization of the isolated defect...
Journal Articles
Publisher: Journals Gateway
EDFA Technical Articles (2002) 4 (3): 11–14.
Published: 01 August 2002
... Electronic Device Failure Analysis 11 Electrostatic Discharge Susceptibility (continued) The microengine ESD tests revealed mean failure voltages of ~ 118 V and ~ 107 V for single pulse HBM and MM. These tests are required to induce failures in the electrostatic actuators of a microengine. The failure...
Journal Articles
Publisher: Journals Gateway
EDFA Technical Articles (2017) 19 (1): 26–40.
Published: 01 February 2017
..., highlighting the capabilities of each method. One is electron beam induced current (EBIC), and the other is electron beam absorbed current (EBAC). For both methods, the primary electron beam of the SEM acts as a local current source that generates a resulting current density within the IC structure...
Journal Articles
Publisher: Journals Gateway
EDFA Technical Articles (2016) 18 (1): 30–35.
Published: 01 February 2016
... for mechanical grinding procedures. In this case, the solder joint contacts have a diameter of 150 µm, which is a typical dimension. As a first step, rapid cross sectioning was done at the highest achievable xenon beam current of 1.3 µA. The coarse PFIB milling of a 500-µm-long and 1-mm-deep box takes 10 h...