1-20 of 311 Search Results for

silicon

Sort by
Journal Articles
EDFA Technical Articles (2011) 13 (2): 4–11.
Published: 01 May 2011
...Janet Semmens; Tom Adams Acoustic microimaging has advanced over the past few years in response to the growing use of thinner silicon die and innovative packaging designs. This article reviews the basic principles of acoustic imaging technology and describes some of the applications made possible...
Journal Articles
EDFA Technical Articles (2011) 13 (2): 20–27.
Published: 01 May 2011
... elemental analysis energy dispersive spectroscopy energy resolution SEM-EDS spatial resolution TEM-EDS X-ray detector httpsdoi.org/10.31399/asm.edfa.2011-2.p020 EDFAAO (2011) 2:20-27 Energy-Dispersive Spectroscopy 1537-0755/$19.00 ©ASM International® Commentary on Applications of EDS in Silicon IC...
Journal Articles
EDFA Technical Articles (2014) 16 (4): 14–19.
Published: 01 November 2014
...Chris Richardson This paper describes a methodology for preparing contoured devices by using a milling machine in conjunction with a spectral reflectance measurement system for meeting ±5 μm remaining silicon thickness (RST) tolerances. This paper describes a methodology for preparing contoured...
Journal Articles
EDFA Technical Articles (2015) 17 (1): 12–20.
Published: 01 February 2015
... imaging resolution solid immersion lens through-silicon metrology target 1 2 httpsdoi.org/10.31399/asm.edfa.2015-1.p012 EDFAAO (2015) 1:12-20 1537-0755/$19.00 ©ASM International® ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 17 NO. 1 A THROUGH-SILICON METROLOGY TARGET FOR SOLID IMMERSION LENSES, PART I...
Journal Articles
EDFA Technical Articles (2015) 17 (2): 4–9.
Published: 01 May 2015
... metrology target and used it to evaluate a SIL in a backside imaging system, which prompted the development of an unmounted, backside-specific version of the through-silicon target. In Part II, they explain how these new targets, in addition to measuring resolution, are being used to determine the field...
Journal Articles
EDFA Technical Articles (2016) 18 (1): 4–12.
Published: 01 February 2016
...Yann Weber Silicon pipeline defects are a growing concern in semiconductor manufacturing with no proposed methodology on how to effectively analyze them and separate the underlying causes. In light of this need, a study was conducted using complementary FA techniques to examine these unusual...
Journal Articles
EDFA Technical Articles (2017) 19 (4): 12–20.
Published: 01 November 2017
... 1537-0755/$19.00 ©ASM International® ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 19 NO. 4 NANOSCALE CAPACITANCE AND CAPACITANCE-VOLTAGE CURVES FOR ADVANCED CHARACTERIZATION OF ELECTRICAL PROPERTIES OF SILICON AND GaN STRUCTURES USING SCANNING MICROWAVE IMPEDANCE MICROSCOPY (sMIM) Oskar Amster, Stuart...
Journal Articles
EDFA Technical Articles (2021) 23 (3): 4–7.
Published: 01 August 2021
...Paiboon Tangyunyong Integrated circuits are subjected to various forms of friction during fabrication and packaging, creating potential problems due to the buildup of charge. This article looks at the distinct characteristics of triboelectric charging damage on silicon-on-insulator devices...
Journal Articles
EDFA Technical Articles (1999) 1 (4): 9–13.
Published: 01 November 1999
...Margaret Wright Jenkins A new preferential etch for (100) and (111) oriented, p- and n-type silicon has been developed. This article describes the basic chemistry of the etching process and provides examples of how it defines critical features such as oxidation-induced stacking faults, dislocations...
Journal Articles
EDFA Technical Articles (2000) 2 (4): 10–11.
Published: 01 November 2000
... and sample decoration techniques for analyzing MMICs and III-V materials. Copyright © ASM International® 2000 2000 ASM International III-V materials FIB cross sectioning MMICs sample decoration Focused Ion Beam httpsdoi.org/10.31399/asm.edfa.2000-4.p010 Focused Ion Beam Applied to Non-Silicon...
Journal Articles
EDFA Technical Articles (2001) 3 (1): 4–9.
Published: 01 February 2001
...Thomas Shaffner; David Seiler The 1997 National Technology Roadmap for Semiconductors (NTRS) and the 1999 International Technology Roadmap for Semiconductors (ITRS) include chapters outlining metrology needs for the silicon semiconductor industry during the next five years and beyond1. The grand...
Journal Articles
EDFA Technical Articles (2003) 5 (3): 5–11.
Published: 01 August 2003
...Doug Josephson This article provides a detailed overview of silicon characterization and debug process, describing the intent of each step, the challenges involved, and the FA tools and techniques used. It also discusses the difference between electrical and functional failures, the implementation...
Journal Articles
EDFA Technical Articles (2008) 10 (2): 6–10.
Published: 01 May 2008
...Bonnie Gannon An optically polished silicon surface with controlled sample thickness is the key to successful backside imaging. Achieving that manually can be very difficult in cases where ICs are encapsulated in packaging materials. This article describes the challenges involved with traditional...
Journal Articles
EDFA Technical Articles (2008) 10 (4): 30–32.
Published: 01 November 2008
...E. Jan Vardaman This article provides a brief introduction to through-silicon via technology, a system-level architecture in which multiple layers of planar devices are stacked with interconnects running in the vertical as well as lateral direction. Some of the different fabrication processes...
Journal Articles
EDFA Technical Articles (2011) 13 (1): 46–48.
Published: 01 February 2011
...E. Jan Vardaman This column explains that silicon interposers, considered an interim solution to full 3D integration, may turn out to be more than a stepping stone along the path toward 3D ICs. Copyright © ASM International® 2011 2011 ASM International 3D ICs silicon interposers...
Journal Articles
EDFA Technical Articles (2011) 13 (4): 4–12.
Published: 01 November 2011
...Al Crouch; Jennifer Dworak 3-D silicon integration is reaching the point where it may be deployed. 3-D silicon integration is different from 3-D packaging in that 3-D packaging involves whole packaged chips, and each chip can still be tested individually throughout the manufacturing and assembly...
Journal Articles
EDFA Technical Articles (2017) 19 (3): 4–11.
Published: 01 August 2017
...Ming Lei; J. Price; Yujin Cho; Farbod Shafiei; M.C. Downer Optical second-harmonic generation (SHG) is a noninvasive technique that provides information about interface properties and crystal defects. This article demonstrates the use of SGH in the study of high-k dielectrics, silicon-on-insulator...
Journal Articles
EDFA Technical Articles (2022) 24 (4): 34–38.
Published: 01 November 2022
...Kirk A. Martin This article, the first in a multi-part series, describes how to finely control remaining silicon thickness (RST) through the correction of mechanical surface profiles using multipoint thickness measurements. It explains why multipoint thickness measurements are necessary...
Journal Articles
EDFA Technical Articles (2023) 25 (3): 23–30.
Published: 01 August 2023
...Frieder H. Baumann; Brian Popielarski; Ryan Sweeney; Felix Beaudoin; Ken Giewont This article introduces silicon photonics, describes what is needed for photonics failure analysis, and shows examples of analysis results for failures in modern silicon photonics circuits. This article introduces...
Journal Articles
EDFA Technical Articles (2000) 2 (3): 20–25.
Published: 01 August 2000
...Wai Mun Yee; Mario Paniccia; Travis Eiles; Valluri Rao Laser voltage probing (LVP), an IR-based technique, facilitates through-silicon signal waveform acquisition and high frequency timing measurements from active p-n junctions on CMOS ICs. The ICs can be in flip-chip as well as wire-bond packages...