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shallow trench isolation

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Journal Articles
EDFA Technical Articles (1999) 1 (2): 13–22.
Published: 01 May 1999
...J.M. Soden; C.L. Henderson; E.I. Cole, Jr. Sandia National Laboratories manufactures 0.5 µm CMOS ICs using local oxidation of silicon (LOCOS) and shallow trench isolation (STI) technologies. A program based on burn-in and life tests is being used to qualify the process for military and space...
Journal Articles
EDFA Technical Articles (2001) 3 (1): 12–14.
Published: 01 February 2001
..., exposing the metal interor other spe- connections and polysilicon gates. cialized techniques. For hermetic packages, leak tests may also be included. A package sample may Fig. 7. Surface view of a transistor be cross sec- on a Shallow Trench Isolation tioned to de- (STI) IC. termine internal structures...
Journal Articles
EDFA Technical Articles (2005) 7 (2): 14–19.
Published: 01 May 2005
... of a wordline transistor connected to the gate voltage, VGS, located between the two trenches. The trenches TL and TR may act as two additional sidewall gates with the shallow trench isolation as a gate oxide, shown in the cut in the x-direction in the lower part of Fig. 3. This assumption can be proved...
Journal Articles
EDFA Technical Articles (2007) 9 (4): 22–25.
Published: 01 November 2007
.... Each resistor of these pairs was composed of 50 smaller resistors in series. Figure 1 also shows the outline of one of these smaller resistors. The smaller resistors were isolated from each other by shallow-trench isolation and were connected with tungsten-filled contacts and tungsten interconnects...
Journal Articles
EDFA Technical Articles (2018) 20 (3): 24–33.
Published: 01 August 2018
... microcracks below metal 1 (Fig. 17). The microcracks severed the PC (PO), RX (AA), and the shallow trench isolation (STI) below metal 1. This resulted in the observed high resistive open. CASE #6: FEOL MICRO CONTAMINATIONS A HOL wafer failing for CA/RX high resistive open was analyzed. Figures 18 and 19...
Journal Articles
EDFA Technical Articles (2000) 2 (3): 1–10.
Published: 01 August 2000
... Roadmaps page 9) Introduction The data were taken on a 0.25 µm generation CMOS logic technology1 using active devices fabricated in dual wells with shallow trench isolation, complementary-doped gates, and source/ Fig. 1: Wafer map of fractional fallout in burn-in as a function of die location. The larger...
Journal Articles
EDFA Technical Articles (2020) 22 (1): 20–25.
Published: 01 February 2020
... features on the surface could be swept away or adhere to the probe. More importantly, the sample or probe can be damaged while scanning over steep topographic features, such as shallow trench isolation (STI), due to difficulties implementing feedback electronics. To overcome these issues, intermittent...
Journal Articles
EDFA Technical Articles (2011) 13 (4): 14–19.
Published: 01 November 2011
... of the suspected causes. A cross-sectional sample was prepared for SCM analysis, along with a reference sample. The SCM images are shown in Fig. 1(b) and (c), where the source, drain, and well regions can be clearly identified. The topographic features, such as gate, spacer, and shallow trench isolation (STI...
Journal Articles
EDFA Technical Articles (2017) 19 (3): 12–20.
Published: 01 August 2017
... of the magnitude of the photocurrent through a cutline spanning from the edge of the metal contact to the isolation trench is shown in Fig. 5. The 585 V breakdown device was measured at reverse-bias voltages of 200, 250, 300, 350, and 400 V. It is apparent that at lower values of the applied bias, the electric...
Journal Articles
EDFA Technical Articles (2016) 18 (1): 4–12.
Published: 01 February 2016
... analysis (Fig. 9). The crystalline defects were noncontinuous lines that were only localized in gate areas. The defects were perpendicular to source-drain fingers and appeared to be very close to the surface. Also, continuous lines were observed in the trench area (shallow trench isolation), nearly...
Journal Articles
EDFA Technical Articles (2023) 25 (2): 9–13.
Published: 01 May 2023
..., material is deposited to refill the N-well trench and to insulate, or isolate, the edited area. An example of this process is the filling of vias. It also should be noted, insulator deposition is critical to passivate any exposed silicon and metal lines. For instance, XeF2 can unintentionally etch exposed...
Journal Articles
EDFA Technical Articles (2013) 15 (4): 26–36.
Published: 01 November 2013
... of the density and atomic number of the material. The upper image (Fig. 4a) shows a gate structure comprising a pFET and two nFETs. Heavier materials, such as the HKMG layers and metal fill, appear brighter, while lighter materials, such as the substrate (fins) and shallow trench isolation materials, appear...
Journal Articles
EDFA Technical Articles (2008) 10 (3): 6–16.
Published: 01 August 2008
.... Test Conf. (ITC), 2005, p. 48.2. 26. R. Schlangen, U. Kerst, A. Kabakow, and C. Boit: Electrical Performance Evaluation of FIB Edited Circuits through Chip Backside Exposing Shallow Trench Isolations, IEEE European Symp. on Reliab. of Electron Devices, Failure Physics and Analysis (ESREF), 2005, p...
Journal Articles
EDFA Technical Articles (2018) 20 (1): 36–S-6.
Published: 01 February 2018
.... The trick shown was to begin the process on flip-chip module-mounted dice, as though it was the start of an FIB chip edit. Sharang began with ultrathin CNC contour milling followed by XeF2 clearing of all remaining silicon to the underside of the fin mandrel and shallow trench isolation regions. Planar...
Journal Articles
EDFA Technical Articles (2012) 14 (4): 4–11.
Published: 01 November 2012
... trench isolations (STI) to avoid generating charge crosstalk between neighboring pixels. The transfer gate allows transfer of the collected charges from the N-pinned region to an N+ reading node in the circuit. Finally, the electrons are converted to a voltage by charging a capacitance that has...
Journal Articles
EDFA Technical Articles (2019) 21 (3): 16–24.
Published: 01 August 2019
... probing. In backside probing, the silicon substrate can be polished down to 30 µm. Advanced node technology uses shallow trench isolation (STI). STI is generally reached by creating a wide trench to the n-well level using common milling tools and then milling a local trench using FIB. Next, depositing...
Journal Articles
EDFA Technical Articles (2000) 2 (4): 4–23.
Published: 01 November 2000
... microscope (TEM) is an electron beam analytical tool capable of imaging materials at the atomic scale. TEM analysis is the tool of choice to isolate oxide breakdown sites and shallow 4 ELECTRONIC DEVICE FAILURE ANALYSIS NEWS trench isolation defects, as well as to identify many other defects. So where does...
Journal Articles
EDFA Technical Articles (2020) 22 (4): 10–16.
Published: 01 November 2020
... cross is prepared on the coupon sample to be characterized. The cross has a mesa structure isolating the top film to be characterized from its surroundings. It is also important that there is an insulating barrier electrically separating the top film from the substrate below, otherwise the electrical...