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resistive interconnections

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Journal Articles
EDFA Technical Articles (2002) 4 (4): 11–16.
Published: 01 November 2002
...Edward I. Cole, Jr.; Paiboon Tangyunyong; Charles F. Hawkins; Michael R. Bruce; Victoria J. Bruce; Rosalinda M. Ring; Wan-Loong Chong Resistive interconnections, a type of soft failure, are extremely difficult to find using existing backside methods, and with flip-chip packages, alternative front...
Journal Articles
EDFA Technical Articles (2004) 6 (3): 13–18.
Published: 01 August 2004
... by variations in any number of parameters including L eff , W eff , I Dsat , V t , contact resistance, effective gate oxide thickness, source and drain resistance, interconnect sheet resistance, and intrametal spacing affecting cross-talk, ground bounce noise, and IR voltage drops. These failures often...
Journal Articles
EDFA Technical Articles (2011) 13 (3): 46–48.
Published: 01 August 2011
... development of resistive interconnect localization (RIL) is his lab. Copyright © ASM International® 2011 2011 ASM International innovation resistive interconnect localization httpsdoi.org/10.31399/asm.edfa.2011-3.p046 Guest Columnist The Rise and Fall of New Failure Analysis Techniques Frank...
Journal Articles
EDFA Technical Articles (2010) 12 (4): 22–27.
Published: 01 November 2010
... beaminduced current,[3] laser-induced voltage alteration,[4] or thermal-induced voltage alteration.[5] Soft defect analysis is covered by recent developments, and various approaches are now available. Soft defect localization,[6] laser-assisted device alteration,[7] and resistive interconnection localization...
Journal Articles
EDFA Technical Articles (2005) 7 (2): 20–28.
Published: 01 May 2005
... the factors that affect nanometer timing at both the component and system level. It reviews the timing properties of nanoscale logic gates, latches, edge-triggered flip-flops, clocks and their interconnects, resistive vias, and pipeline structures. It also discusses the challenges involved in determining...
Journal Articles
EDFA Technical Articles (2006) 8 (3): 12–17.
Published: 01 August 2006
... of sheet resistance.[10] If 90% of the middle square was voided, then what is the impact on resistance? If R = 50 m per square, then the defect-free interconnect is 150 m . The defective metal has two squares on the ends and ten squares in the voided middle square. This elevates the defective metal...
Journal Articles
EDFA Technical Articles (2008) 10 (1): 24–29.
Published: 01 February 2008
... in the failure mechanism.[1] Therefore, physical failure analysis of such samples becomes more challenging. This paper presents recent failure analysis studies on metal-coated interconnects, using optical beam induced resistance change (OBIRCH) in combination with focused ion beam (FIB), scanning electron...
Journal Articles
EDFA Technical Articles (2010) 12 (2): 4–11.
Published: 01 May 2010
... combining dynamic testing with thermal beam induced techniques was conceived to deal with these types of failures. Techniques such as resistive interconnect localization,[3] soft defect localization,[4] and stimulus-induced fault testing[5] belong to this class. They work by stimulating the failing part...
Journal Articles
EDFA Technical Articles (1999) 1 (4): 21–23.
Published: 01 November 1999
..., extensive voiding can cause unacceptable resistance increases in interconnects, or soft failures. Life testing to assess the susceptibility of an IC technology to stress voiding is, at best, difficult, because acceleration factors can be dis- mally low. If one selects the wrong temperature...
Journal Articles
EDFA Technical Articles (2009) 11 (2): 16–22.
Published: 01 May 2009
... contrast imaging and presents examples showing how the different methods are used to isolate low- and high-resistance sites, shorts, and opens as well as ion implantation and metal patterning defects. Copyright © ASM International® 2009 2009 ASM International absorbed electron imaging EBIC...
Journal Articles
EDFA Technical Articles (2008) 10 (3): 6–16.
Published: 01 August 2008
...Ted Lundquist; Mark Thompson; Vladimir Makarov FIB circuit edit tools and techniques have thus far kept pace with the evolution of interconnect materials in ICs and downward scaling of device dimensions. This article assesses the coming challenges for FIB circuit edit technology and the changes...
Journal Articles
EDFA Technical Articles (2007) 9 (1): 6–13.
Published: 01 February 2007
.... Copyright © ASM International® 2007 2007 ASM International critical area layout sensitivity open defects short defects yield prediction httpsdoi.org/10.31399/asm.edfa.2007-1.p006 EDFAAO (2007) 1:6-13 Layout Predicts Yield 1537-0755/$19.00 ©ASM International® Interconnect Layout Sensitivity...
Journal Articles
EDFA Technical Articles (2012) 14 (2): 14–20.
Published: 01 May 2012
... for silicon chip-to-chip systems. thermally based fault isolation to identify electrical defects such as resistive opens and electrical shorts. The defective circuitry or interconnecting system is stimulated electrically by a periodically pulsed supply voltage with a certain frequency, producing a local...
Journal Articles
EDFA Technical Articles (2009) 11 (1): 46–47.
Published: 01 February 2009
... that failed in electrical testing, in reliability evaluations, or in the field. Present and future needs for physical failure analysis (FA) of ICs must include both preventive FA, during technology and product development, and postmortem FA. For on-chip interconnects, the in situ study...
Journal Articles
EDFA Technical Articles (2010) 12 (3): 10–18.
Published: 01 August 2010
...Paiboon Tangyunyong; Edward I. Cole, Jr. Thermally-induced voltage alteration (TIVA) is a laser-based method for localizing interconnect defects in ICs. Its main limitation is that the laser must heat the defect and change its resistance sufficiently to produce a measurable voltage alteration...
Journal Articles
EDFA Technical Articles (2001) 3 (4): 9–13.
Published: 01 November 2001
...Kiyoshi Nikawa Scanning laser-SQUID microscopy is a new electrical inspection and failure analysis technique that can detect open, high-resistance, and shorted interconnects without electrical contact in areas ranging in size from a few square microns to an entire die. This article describes...
Journal Articles
EDFA Technical Articles (2016) 18 (4): 24–29.
Published: 01 November 2016
...Ingrid De Wolf Chip-level 3D integration, where chips are thinned, stacked, and vertically interconnected using TSVs and microbumps, brings as many challenges as it does improvements, particularly in the area of failure analysis. This article assesses the capabilities of various FA techniques...
Journal Articles
EDFA Technical Articles (2012) 14 (2): 4–12.
Published: 01 May 2012
...Holm Geisler; Martin Brueckner; Petra Hofmann; Matthias U. Lehr; Michael Grillberger; Eckhard Langer The introduction of ultralow-k dielectrics is a recent milestone in the quest for higher clock speeds and lower power consumption in ICs. One tradeoff, however, is that interconnect stacks layered...
Journal Articles
EDFA Technical Articles (2003) 5 (4): 13–24.
Published: 01 November 2003
... site did indeed explain the cause of the electrical failure of the device. Optical Beam Induced Resistance Change/ Seebeck Effect Imaging TIVA uses localized heating to alter the resistance of defects within the silicon and within the metal interconnect. This change in resistance causes a corresponding...
Journal Articles
EDFA Technical Articles (2015) 17 (1): 4–10.
Published: 01 February 2015
...Benjamin B. Yang This article provides an overview of the types of failures that tend to occur in photovoltaic (PV) modules in the field and the methods typically used to investigate them. It covers the causes and effects of broken and corroded interconnects, cracked and damaged cells, short...