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resistive interconnections
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Journal Articles
Edward I. Cole, Jr., Paiboon Tangyunyong, Charles F. Hawkins, Michael R. Bruce, Victoria J. Bruce ...
EDFA Technical Articles (2002) 4 (4): 11–16.
Published: 01 November 2002
...Edward I. Cole, Jr.; Paiboon Tangyunyong; Charles F. Hawkins; Michael R. Bruce; Victoria J. Bruce; Rosalinda M. Ring; Wan-Loong Chong Resistive interconnections, a type of soft failure, are extremely difficult to find using existing backside methods, and with flip-chip packages, alternative front...
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Resistive interconnections, a type of soft failure, are extremely difficult to find using existing backside methods, and with flip-chip packages, alternative front side approaches are of little or no help. In an effort to address this challenge, a team of engineers developed a new method that uses the effects of resistive heating to directly locate defective vias, contacts, and conductors from either side of the die. In this article, they discuss the basic principles of their new method and demonstrate its use on two ICs in which a variety of resistive interconnection failures were found.
Journal Articles
EDFA Technical Articles (2004) 6 (3): 13–18.
Published: 01 August 2004
... by variations in any number of parameters including L eff , W eff , I Dsat , V t , contact resistance, effective gate oxide thickness, source and drain resistance, interconnect sheet resistance, and intrametal spacing affecting cross-talk, ground bounce noise, and IR voltage drops. These failures often...
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Parametric failures are of two general types. One type is due to defects that affect circuit parameters. The other type, which occurs in defect-free parts, is the result of interdie parameter statistical variation. IC failures can be caused by variations in any number of parameters including L eff , W eff , I Dsat , V t , contact resistance, effective gate oxide thickness, source and drain resistance, interconnect sheet resistance, and intrametal spacing affecting cross-talk, ground bounce noise, and IR voltage drops. These failures often influence the maximum operating frequency of the IC and are seldom detected by simple stuck-at fault, delay fault, functional, or I DDQ tests. This article discusses the origin, classification, and detection of a wide range of parametric failures.
Journal Articles
EDFA Technical Articles (2011) 13 (3): 46–48.
Published: 01 August 2011
... development of resistive interconnect localization (RIL) is his lab. Copyright © ASM International® 2011 2011 ASM International innovation resistive interconnect localization httpsdoi.org/10.31399/asm.edfa.2011-3.p046 Guest Columnist The Rise and Fall of New Failure Analysis Techniques Frank...
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This column provides some thoughts on the cultivation of ideas and the conditions that must exist in a failure analysis laboratory to allow fledgling methods to become deeply rooted, flourishing techniques. As an example, the author recounts the introduction and subsequent development of resistive interconnect localization (RIL) is his lab.
Journal Articles
EDFA Technical Articles (2010) 12 (4): 22–27.
Published: 01 November 2010
... beaminduced current,[3] laser-induced voltage alteration,[4] or thermal-induced voltage alteration.[5] Soft defect analysis is covered by recent developments, and various approaches are now available. Soft defect localization,[6] laser-assisted device alteration,[7] and resistive interconnection localization...
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Dynamic laser stimulation is widely used in the PASS/FAIL mapping mode for soft defect localization. Recent improvements, including parametric mapping and multiple-parameter acquisition, significantly increase the amount of information that can be extracted from DLS measurements. This article explains where and how these new techniques are used and how they may be even further improved.
Journal Articles
EDFA Technical Articles (2005) 7 (2): 20–28.
Published: 01 May 2005
... the factors that affect nanometer timing at both the component and system level. It reviews the timing properties of nanoscale logic gates, latches, edge-triggered flip-flops, clocks and their interconnects, resistive vias, and pipeline structures. It also discusses the challenges involved in determining...
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Dealing with timing failures in nanometer-scale ICs requires a deeper understanding of critical timing paths, noise mechanisms, process variability, timing rules, and the statistical interaction of random parameter values and distributions. This article examines the factors that affect nanometer timing at both the component and system level. It reviews the timing properties of nanoscale logic gates, latches, edge-triggered flip-flops, clocks and their interconnects, resistive vias, and pipeline structures. It also discusses the challenges involved in determining critical timing paths and the underlying causes of nanometer timing failures.
Journal Articles
EDFA Technical Articles (2006) 8 (3): 12–17.
Published: 01 August 2006
... of sheet resistance.[10] If 90% of the middle square was voided, then what is the impact on resistance? If R = 50 m per square, then the defect-free interconnect is 150 m . The defective metal has two squares on the ends and ten squares in the voided middle square. This elevates the defective metal...
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This article discusses the causes and effects of stuck-open faults (SOFs) in nanometer CMOS ICs. It addresses detection and localization challenges and explains how resistive contacts and vias and the use of damascene-copper processes contribute to the problem. It also discusses layout techniques that reduce the likelihood of SOF failures.
Journal Articles
EDFA Technical Articles (2008) 10 (1): 24–29.
Published: 01 February 2008
... in the failure mechanism.[1] Therefore, physical failure analysis of such samples becomes more challenging. This paper presents recent failure analysis studies on metal-coated interconnects, using optical beam induced resistance change (OBIRCH) in combination with focused ion beam (FIB), scanning electron...
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With the introduction of 65 nm technology, the cross-sectional dimensions of copper interconnect in some layers are now smaller than 100 nm, which translates to current densities on the order of several MA/cm2. Electromigration as a root cause for chip failure is thus a major concern and is still being examined. In this article, the authors present recent failure analysis studies on metal-coated copper interconnects, using OBIRCH techniques in combination with FIB cross-sectioning and SEM and TEM imaging.
Journal Articles
EDFA Technical Articles (2010) 12 (2): 4–11.
Published: 01 May 2010
... combining dynamic testing with thermal beam induced techniques was conceived to deal with these types of failures. Techniques such as resistive interconnect localization,[3] soft defect localization,[4] and stimulus-induced fault testing[5] belong to this class. They work by stimulating the failing part...
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Wafer-level failure analysis plays an important role in IC fabrication, both in process development and yield enhancement. This article outlines the general flow for wafer-level FA and explains how it differs for memory and logic products. It describes the tools and procedures used for failure mode verification, electrical analysis, fault localization, sample preparation, chemical analysis, and physical failure analysis. It also discusses the importance of implementing corrective actions and tracking the results.
Journal Articles
EDFA Technical Articles (1999) 1 (4): 21–23.
Published: 01 November 1999
..., extensive voiding can cause unacceptable resistance increases in interconnects, or soft failures. Life testing to assess the susceptibility of an IC technology to stress voiding is, at best, difficult, because acceleration factors can be dis- mally low. If one selects the wrong temperature...
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Stress voiding is an insidious IC failure mechanism that can be difficult to identify and arrest. It is of particular concern to those who produce and test ICs with aluminum-alloy interconnects or who assess the reliability of legacy devices with long service life. This article explains how stress voids form and grow and how to determine the root cause by amassing physical evidence and ruling out other failure mechanisms. The key to differentiating stress voiding from other types of failures is recognizing that is the result of three distinct physical phenomena, stress, nucleation, and diffusion, all of which must be confirmed before attempting to make process corrections.
Journal Articles
EDFA Technical Articles (2009) 11 (2): 16–22.
Published: 01 May 2009
... contrast imaging and presents examples showing how the different methods are used to isolate low- and high-resistance sites, shorts, and opens as well as ion implantation and metal patterning defects. Copyright © ASM International® 2009 2009 ASM International absorbed electron imaging EBIC...
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This article discusses the advantages of SEM-based nanoprobing and the various ways it can be used to locate defects associated with IC failures. It describes the basic measurement physics of electron beam induced current, absorbed electron, and voltage distribution contrast imaging and presents examples showing how the different methods are used to isolate low- and high-resistance sites, shorts, and opens as well as ion implantation and metal patterning defects.
Journal Articles
EDFA Technical Articles (2008) 10 (3): 6–16.
Published: 01 August 2008
...Ted Lundquist; Mark Thompson; Vladimir Makarov FIB circuit edit tools and techniques have thus far kept pace with the evolution of interconnect materials in ICs and downward scaling of device dimensions. This article assesses the coming challenges for FIB circuit edit technology and the changes...
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FIB circuit edit tools and techniques have thus far kept pace with the evolution of interconnect materials in ICs and downward scaling of device dimensions. This article assesses the coming challenges for FIB circuit edit technology and the changes that will be necessary to keep FIB-based etching, milling, and deposition viable in the future.
Journal Articles
EDFA Technical Articles (2007) 9 (1): 6–13.
Published: 01 February 2007
.... Copyright © ASM International® 2007 2007 ASM International critical area layout sensitivity open defects short defects yield prediction httpsdoi.org/10.31399/asm.edfa.2007-1.p006 EDFAAO (2007) 1:6-13 Layout Predicts Yield 1537-0755/$19.00 ©ASM International® Interconnect Layout Sensitivity...
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Layout sensitivity, a measure of vulnerability to yield loss, typically takes several days to compute for a modern VLSI design. In this article, the authors present and demonstrate a new stochastic model that can significantly expedite the process. The model is based on simple IC layout parameters including wire width, wire spacing, and channel density. The authors explain how they derived the model and how it compares to actual data. They also discuss the causes and effects of open and short defects and define the concepts of critical area and layout sensitivity.
Journal Articles
EDFA Technical Articles (2012) 14 (2): 14–20.
Published: 01 May 2012
... for silicon chip-to-chip systems. thermally based fault isolation to identify electrical defects such as resistive opens and electrical shorts. The defective circuitry or interconnecting system is stimulated electrically by a periodically pulsed supply voltage with a certain frequency, producing a local...
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Failure analysis is becoming increasingly difficult with the emergence of 3D integrated packages due to their complex layouts, diverse materials, shrinking dimensions, and tight fits. This article demonstrates several FA techniques, including high-frequency scanning acoustic microscopy, lock-in thermography, and FIB cross-sectioning in combination with plasma ion etching or laser ablation. Detailed case studies show how the various methods can be used to analyze bonding integrity between different materials, chip-to-chip interface structures, buried interconnect defects, and through-silicon vias at either the device or package level.
Journal Articles
EDFA Technical Articles (2009) 11 (1): 46–47.
Published: 01 February 2009
... that failed in electrical testing, in reliability evaluations, or in the field. Present and future needs for physical failure analysis (FA) of ICs must include both preventive FA, during technology and product development, and postmortem FA. For on-chip interconnects, the in situ study...
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This column explains why transmission X-ray microscopy (TXM) and X-ray computed tomography (XCT) could become the methods of choice for defect localization in the coming years.
Journal Articles
Understanding the Effects of Local Structures on TIVA Profiles Using Thermal Modeling and Simulation
EDFA Technical Articles (2010) 12 (3): 10–18.
Published: 01 August 2010
...Paiboon Tangyunyong; Edward I. Cole, Jr. Thermally-induced voltage alteration (TIVA) is a laser-based method for localizing interconnect defects in ICs. Its main limitation is that the laser must heat the defect and change its resistance sufficiently to produce a measurable voltage alteration...
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Thermally-induced voltage alteration (TIVA) is a laser-based method for localizing interconnect defects in ICs. Its main limitation is that the laser must heat the defect and change its resistance sufficiently to produce a measurable voltage alteration. Anything that interferes with laser absorption or alters defect heating makes TIVA less effective. This article presents the results of a study on the effects of local structures on TIVA imaging. The authors selected a polysilicon-metal test structure as the focal point of their study, which entailed experimental investigation along with modeling and simulation. It was found that the TIVA profiles on this structure are strongly influenced by local geometry, particularly the variation of interlevel silicon dioxide thickness and the placement of polysilicon lines with respect to aluminum lines. Understanding such relationships is essential for locating defects using TIVA techniques.
Journal Articles
EDFA Technical Articles (2001) 3 (4): 9–13.
Published: 01 November 2001
...Kiyoshi Nikawa Scanning laser-SQUID microscopy is a new electrical inspection and failure analysis technique that can detect open, high-resistance, and shorted interconnects without electrical contact in areas ranging in size from a few square microns to an entire die. This article describes...
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Scanning laser-SQUID microscopy is a new electrical inspection and failure analysis technique that can detect open, high-resistance, and shorted interconnects without electrical contact in areas ranging in size from a few square microns to an entire die. This article describes the setup of a prototype laser-SQUID system, explaining how it works and how it compares to other nondestructive defect localization techniques. It presents application examples in which laser-SQUID microscopy is used to locate gate oxide shorts to within 1.3 μm and detect IC defects prior to bond-pad pattering and after bonding and packaging. It also includes a series of images acquired from a board-mounted chip with fields of view ranging from 5 x 5 mm down to 50 x 50 μm.
Journal Articles
EDFA Technical Articles (2016) 18 (4): 24–29.
Published: 01 November 2016
...Ingrid De Wolf Chip-level 3D integration, where chips are thinned, stacked, and vertically interconnected using TSVs and microbumps, brings as many challenges as it does improvements, particularly in the area of failure analysis. This article assesses the capabilities of various FA techniques...
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Chip-level 3D integration, where chips are thinned, stacked, and vertically interconnected using TSVs and microbumps, brings as many challenges as it does improvements, particularly in the area of failure analysis. This article assesses the capabilities of various FA techniques in light of the challenges posed by 3D integration and identifies current shortcomings and future needs.
Journal Articles
EDFA Technical Articles (2012) 14 (2): 4–12.
Published: 01 May 2012
...Holm Geisler; Martin Brueckner; Petra Hofmann; Matthias U. Lehr; Michael Grillberger; Eckhard Langer The introduction of ultralow-k dielectrics is a recent milestone in the quest for higher clock speeds and lower power consumption in ICs. One tradeoff, however, is that interconnect stacks layered...
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The introduction of ultralow-k dielectrics is a recent milestone in the quest for higher clock speeds and lower power consumption in ICs. One tradeoff, however, is that interconnect stacks layered with low-k materials rather than SiO 2 are more vulnerable to mechanical damage. This article presents a method that makes it possible to assess the mechanical integrity of interconnect stacks at the wafer level. The new bump-assisted BEOL stability indentation (BABSI) test uses a nanoindentation tool to apply lateral and vertical forces to solder bumps and copper pillars on the wafer surface. By applying appropriate stresses, various aspects of integrity, such as the onset of failure modes or the weakest interface in the stack, can be determined by subsequent SEM/FIB analysis. The authors describe the basic principles of the measurement technique and some of the applications in which it was used.
Journal Articles
EDFA Technical Articles (2003) 5 (4): 13–24.
Published: 01 November 2003
... site did indeed explain the cause of the electrical failure of the device. Optical Beam Induced Resistance Change/ Seebeck Effect Imaging TIVA uses localized heating to alter the resistance of defects within the silicon and within the metal interconnect. This change in resistance causes a corresponding...
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This article provides a high-level review of the tools and techniques used for backside analysis. It discusses the use of laser scanning and conventional microscopy, liquid and solid immersion lenses, photon emission microscopy (PEM), and laser-based fault isolation methods with emphasis on light-induced voltage alteration (LIVA). It explains how laser voltage probing is used for backside waveform acquisition and describes backside sample preparation and deprocessing techniques including parallel polishing and milling, laser chemical etching, and FIB circuit edit and modification.
Journal Articles
EDFA Technical Articles (2015) 17 (1): 4–10.
Published: 01 February 2015
...Benjamin B. Yang This article provides an overview of the types of failures that tend to occur in photovoltaic (PV) modules in the field and the methods typically used to investigate them. It covers the causes and effects of broken and corroded interconnects, cracked and damaged cells, short...
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This article provides an overview of the types of failures that tend to occur in photovoltaic (PV) modules in the field and the methods typically used to investigate them. It covers the causes and effects of broken and corroded interconnects, cracked and damaged cells, short and open bypass diodes, delamination, moisture ingress, and encapsulant discoloration. It describes tools and techniques commonly employed in the analysis of PV failures, including IV measurements, electroluminescence, infrared imaging, and visual inspection. It also discusses current and emerging challenges in PV failure analysis and reliability.
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