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random defect yield loss

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Journal Articles
EDFA Technical Articles (2018) 20 (3): 4–7.
Published: 01 August 2018
... circuit complexity, systematic and random defects, and defect clustering. As the examples in the article show, with just a basic understanding of yield models, readers can estimate expected yield losses and identify abnormal yield results for a given design. Copyright © ASM International® 2018 2018...
Journal Articles
EDFA Technical Articles (2007) 9 (1): 6–13.
Published: 01 February 2007
... traditionally has been limited only by defect density, is now greatly impacted by the interaction of process-related deviations with design elements.[1] Reducing yield loss mechanisms has now become ever more dependent on design, not just improvement of the manufacturing process. Open Defects An open defect...
Journal Articles
EDFA Technical Articles (2007) 9 (3): 6–16.
Published: 01 August 2007
... photolithography; and a host of others. While these technological breakthroughs have been lifesaving to the semiconductor industry, they have provided many challenges to the failure analysis community and to capabilities for predicting and controlling yield. Above 130 nm, defects were mostly caused by particles...
Journal Articles
EDFA Technical Articles (2004) 6 (1): 6–11.
Published: 01 February 2004
... john.suehle@nist.gov Introduction Time-dependent dielectric breakdown (TDDB) of thin SiO2 gate dielectrics has been one of the most intensively studied failure mechanisms over the past three decades. Usually considered catastrophic, TDDB is a wear-out phenomenon, where defects are created over time...
Journal Articles
EDFA Technical Articles (2014) 16 (3): 4–12.
Published: 01 August 2014
... should be debugged equally based solely on the sort data outcome. Follow-on dynamic photon emission and soft defect localization, as shown by the insets in (a) (a) (b) Fig. 5 (a) Plot of DAC reference voltage test and DAC-related functional test. (b) Yield-loss percentage Pareto chart 10 Electronic...
Journal Articles
EDFA Technical Articles (2010) 12 (2): 12–18.
Published: 01 May 2010
... obtained from six dies randomly selected from a 9.8 M-gate, seven-metal-layer ASIC manufactured in 90 nm technology. As shown, layout-aware diagnosis reduces the defect search area on the die, in some cases, by an order of magnitude, providing the means to diagnosis-driven yield improvements...
Journal Articles
EDFA Technical Articles (2005) 7 (3): 6–12.
Published: 01 August 2005
...A. John Mardinly Transmission electron microscopy (TEM) plays an important role semiconductor process development, defect identification, yield improvement, and root-cause failure analysis. At the same time, however, certain artifacts of specimen preparation and imaging present barriers for linear...
Journal Articles
EDFA Technical Articles (2015) 17 (2): 4–9.
Published: 01 May 2015
... and then a product engineer involved in the development of the first yielding silicon gate CMOS devices used in erasable programmable read-only and random-access memories. In 1978, Mr. Marks moved to Amdahl to manage its FA and quick-turn fabrication labs. In 1993, he moved to Cirrus Logic to manage its silicon FA...
Journal Articles
EDFA Technical Articles (2004) 6 (1): 13–21.
Published: 01 February 2004
... useful in this charactoo high can cause state loss. Briefly, state loss occurs terization but is limited by the difficulty of achieving when the off or total leakage current of the tran- complete coverage. As mentioned earlier, precharged sistors holding a state node exceeds that of the on (domino...
Journal Articles
EDFA Technical Articles (2005) 7 (3): 39–44.
Published: 01 August 2005
... been discounted as a random defect, caused by contamination or a pinhole in the nitride passivation. By having several failed samples to compare, we could see some similarities and differences. The corrosion was always of a ground trace, where it passed next to a V+ power trace but at different...