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Search Results for pulsed-laser imaging
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Journal Articles
Combining Refractive Solid Immersion Lens and Pulsed Laser-Induced Technique for Integrated Circuit Failure Analysis
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EDFA Technical Articles (2010) 12 (3): 20–27.
Published: 01 August 2010
... a limit on the laser power that can be safely used on 45 nm devices, which further compromises fault localization precision. In this article, the authors explain how they overcome these limitations using pulsed laser-induced imaging techniques and a refractive solid immersion lens. Two case studies show...
Abstract
View articletitled, Combining Refractive Solid Immersion Lens and <span class="search-highlight">Pulsed</span> <span class="search-highlight">Laser</span>-Induced Technique for Integrated Circuit Failure Analysis
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for article titled, Combining Refractive Solid Immersion Lens and <span class="search-highlight">Pulsed</span> <span class="search-highlight">Laser</span>-Induced Technique for Integrated Circuit Failure Analysis
The best spatial resolution that can be achieved with far-field optical fault localization techniques is around 20 times larger than the critical defect size at the 45 nm technology node. There is also a limit on the laser power that can be safely used on 45 nm devices, which further compromises fault localization precision. In this article, the authors explain how they overcome these limitations using pulsed laser-induced imaging techniques and a refractive solid immersion lens. Two case studies show how the combination of pulsed-laser scanning optical microscopy and a solid immersion lens improves localization precision and detection sensitivity.
Journal Articles
Laser-Induced Detection Sensitivity Enhancement with Laser Pulsing
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EDFA Technical Articles (2008) 10 (3): 18–26.
Published: 01 August 2008
... also be observed that the induced signal lags the beam transition by 6 s. This time delay could be due to the (a) (b) Fig. 1 Frontside image of 15.3 single metal line electromigration sample with TIVA signal overlaid in pseudocolor 20 Electronic Device Failure Analysis (c) Fig. 2 Pulsed laser...
Abstract
View articletitled, <span class="search-highlight">Laser</span>-Induced Detection Sensitivity Enhancement with <span class="search-highlight">Laser</span> <span class="search-highlight">Pulsing</span>
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for article titled, <span class="search-highlight">Laser</span>-Induced Detection Sensitivity Enhancement with <span class="search-highlight">Laser</span> <span class="search-highlight">Pulsing</span>
The use of a pulsed laser with a lock-in amplifier has been shown to increase the detection sensitivity of scanning optical microscopes by a factor of ten. In this article, the authors explain how they implement laser pulsing without a lock-in amplifier through software control. The detection sensitivity of their method, which is based on a digital signal integration algorithm, has been shown to be comparable to that achieved with a lock-in amplifier. Several case studies illustrate the effectiveness of the technique for locating various types of defects.
Journal Articles
Recent Development: Single Contact Optical Beam Induced Currents (SCOBIC) – Technique and Applications
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EDFA Technical Articles (2001) 3 (4): 29–35.
Published: 01 November 2001
... the advantages of OBIC and SCEBIC and avoids their disadvantages. System Setup The SCOBIC system combines a scanning optical microscope, laser beam pulsing, transient signal acquisition, and SCOBIC imaging modules. The schematic diagram of the SCOBIC system is shown in Fig. 1. A 633 nm HeNe laser is used...
Abstract
View articletitled, Recent Development: Single Contact Optical Beam Induced Currents (SCOBIC) – Technique and Applications
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for article titled, Recent Development: Single Contact Optical Beam Induced Currents (SCOBIC) – Technique and Applications
Single contact optical beam induced currents (SCOBIC) is a variation on the OBIC failure analysis technique that requires only one point of contact with the junction being examined. This article discusses the basic principles of this new method and how it compares with OBIC in terms of measurement performance. It also presents examples showing how SCOBIC can be used to analyze CMOS devices from the front and back side without need for complex FIB and microprobing procedures.
Journal Articles
High-Resolution Tabletop Extreme-Ultraviolet Microscopy
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EDFA Technical Articles (2007) 9 (1): 14–18.
Published: 01 February 2007
... pulse creates a transient popu- lation inversion. The laser pro- duces ~0.2 (0.1) PJ pulses of pico- second time duration at O 13.9 (13.2) nm and a 5 Hz repetition rate. Fig. 5 EUV image of 50 nm dense lines (left) obtained at O 13.2 nm with the FZP with Test samples used to assess spatial resolution...
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View articletitled, High-Resolution Tabletop Extreme-Ultraviolet Microscopy
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for article titled, High-Resolution Tabletop Extreme-Ultraviolet Microscopy
Recent demonstrations of high-repetition-rate, high-brightness soft X-ray lasers are opening new possibilities for the development of compact imaging systems with spatial resolution approaching the illumination wavelength. This article examines some of configurations that have been used in these extreme ultraviolet (EUV) imaging systems and their general capabilities. One of the systems discussed uses the output from a 46.9 nm argon laser to render transmission and reflection-mode images with a spatial resolution of 120 to 150 nm. Another uses a 13 nm AgCd laser with Fresnel zone plate optics, producing transmission-mode images with a spatial resolution of 38 nm.
Journal Articles
Finding the “When” and Improving the “Where” With Picosecond Time-Resolved LADA
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EDFA Technical Articles (2015) 17 (2): 10–17.
Published: 01 May 2015
... developed and reported on in Ref 2 and 3 can as shown in Fig. 1. Continuously pulsing the laser at the measure the time of the failing transition relative to the same time in the loop holds time constant, and x and y are start of the test loop. scanned to create a TR-LADA image, which snapshots the Fig. 1...
Abstract
View articletitled, Finding the “When” and Improving the “Where” With Picosecond Time-Resolved LADA
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for article titled, Finding the “When” and Improving the “Where” With Picosecond Time-Resolved LADA
Laser-assisted device alteration (LADA) is an effective tool for identifying speed-limiting paths in ICs. When implemented with a continuous wave laser, it can reveal where the speed-limiting path resides but not when the slow (or fast) logic transition is occurring. To overcome this limitation, an enhanced version of the technique has been developed. This article discusses the capabilities of the new method, called picosecond time-resolved LADA, and explains how it complements the existing failure analysis toolset, facilitating faster resolution of issues and root-cause identification.
Journal Articles
Terahertz Imaging: A New Technology for Inspection and Quality Control
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EDFA Technical Articles (2001) 3 (2): 1–12.
Published: 01 May 2001
... research. The earliest and most widespread of these is terahertz time-domain spectroscopy, or THz-TDS1-2. The key components of a THz-TDS system are a fem- tosecond laser and a pair of specially designed trans- ducers. By gating these transducers with ultrafast opti- cal pulses, one can get picosecond...
Abstract
View articletitled, Terahertz <span class="search-highlight">Imaging</span>: A New Technology for Inspection and Quality Control
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for article titled, Terahertz <span class="search-highlight">Imaging</span>: A New Technology for Inspection and Quality Control
This article discusses the basic principles of terahertz time-domain spectroscopy (THz-TDS) and the function and limitations of key components in a THz-TDS system. It also provides examples of some of the ways THz-TD imaging is used alone and in combination with other analytical techniques.
Journal Articles
Laser Voltage Probe (LVP): A Novel Optical Probing Technology for Flip-Chip Packaged Microprocessors
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EDFA Technical Articles (2000) 2 (3): 20–25.
Published: 01 August 2000
... the input signal has been Fig. 8: Comparison of LVP and E-Beam waveforms for similar probe pulse widths. Fig. 7: Backside IR image of a CMOS IC showing transistor devices at silicon level. Image acquired using the LVP laser scanning microscope. 24 Fig. 9: Internal signal waveforms acquired using the LVP...
Abstract
View articletitled, <span class="search-highlight">Laser</span> Voltage Probe (LVP): A Novel Optical Probing Technology for Flip-Chip Packaged Microprocessors
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for article titled, <span class="search-highlight">Laser</span> Voltage Probe (LVP): A Novel Optical Probing Technology for Flip-Chip Packaged Microprocessors
Laser voltage probing (LVP), an IR-based technique, facilitates through-silicon signal waveform acquisition and high frequency timing measurements from active p-n junctions on CMOS ICs. The ICs can be in flip-chip as well as wire-bond packages with backside access to the IC. As the article explains, LVP significantly improves silicon debug and failure analysis throughput time compared to electron-beam probing because it eliminates the need for backside trenching and probe-hole generating operations.
Journal Articles
Roadmaps: Advanced Fault Isolation Techniques
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EDFA Technical Articles (1999) 1 (3): 6–17.
Published: 01 August 1999
.... The technique is based on phase contrast near infrared imaging of temperature dependant changes in the substrate refractive index. Fig. 4: Optical schematic of Schlieren Optical Imaging System used to capture PCSS image. Pulsed laser diode source and timing electronics not shown. Reproduced with the permission...
Abstract
View articletitled, Roadmaps: Advanced Fault Isolation Techniques
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for article titled, Roadmaps: Advanced Fault Isolation Techniques
Technologies relatively new to failure analysis, like time-correlated photon counting, electro-optical probing, antireflective (AR) coating, Schlieren microscopy, and superconducting quantum interference (SQUID) devices are being leveraged to create faster, more powerful tools to meet increasingly difficult challenges in failure analysis. This article reviews recent advances and research in fault isolation and circuit repair.
Journal Articles
Take a Closer Look at Electrically-Enhanced LADA: Setup
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EDFA Technical Articles (2016) 18 (3): 10–16.
Published: 01 August 2016
... Block diagram of EeLADA concept laser stimulates the region of interest, the test outcome is compared against the reference failing signature at each pixel. In the event of a match, a trigger pulse is generated by the comparator module and sent to the image processor. This is how LADA signals...
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View articletitled, Take a Closer Look at Electrically-Enhanced LADA: Setup
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for article titled, Take a Closer Look at Electrically-Enhanced LADA: Setup
This article explains how hardware and software enhancements bring new capabilities to one of the most widely used soft-defect localization techniques. It discusses the basic concept of electrically enhanced laser-assisted device alteration (EeLADA) and demonstrates its use on different types of soft and hard defects. It also discusses the relative advantages of hardware and software implementations.
Journal Articles
Characterizing Organic Nanocontamination in Semiconductors by Resonance-Enhanced Nanoscale IR Spectroscopy (AFM-IR)
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EDFA Technical Articles (2017) 19 (2): 31–34.
Published: 01 May 2017
... to 100 nm) of the contaminant residue (human skin tissue) on one of the test silicon wafers. After locating the desired site from the AFM image, the QCL pulse rate is tuned to one of the cantilever oscillation modes (~170 kHz, 2nd mode), and the laser is swept in the fast-acquisition mode to acquire...
Abstract
View articletitled, Characterizing Organic Nanocontamination in Semiconductors by Resonance-Enhanced Nanoscale IR Spectroscopy (AFM-IR)
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for article titled, Characterizing Organic Nanocontamination in Semiconductors by Resonance-Enhanced Nanoscale IR Spectroscopy (AFM-IR)
This article discusses the development of resonance-enhanced AFM-IR spectroscopy and demonstrates its effectiveness on silicon test wafers with nanoscale skin particles and polyester contaminants.
Journal Articles
Monograin Defect in Polysilicon Gates
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EDFA Technical Articles (2018) 20 (1): 10–18.
Published: 01 February 2018
...] No signatures were obtained with other techniques (emission microscopy, laser frequency imaging). Using a 220× (2.45 NA) solid immersion lens with an 8× laser scan magnification through the backside of the silicon, the SDL signature provides very accurate localization of the failure, highlighting the PMOS...
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View articletitled, Monograin Defect in Polysilicon Gates
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for article titled, Monograin Defect in Polysilicon Gates
Soft electrical failures caused by monograin defects can have a significant impact on yield in technology nodes below 40 nm. Moreover, the failures are hard to identify and the defects give very few signatures during localization testing. In this article, the authors explain how they used nanobeam diffraction with automated crystal orientation and phase mapping to pinpoint a single grain orientation causing the problem and, as a result, are now able to recognize the symptoms of this type of failure, observe the defect, and limit the impact on electrical timing margins through both design and process corrections.
Journal Articles
ISTFA 2012 User's Group Summaries
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EDFA Technical Articles (2013) 15 (1): 37–40.
Published: 01 February 2013
... speaker, Chris Nemirow from DCG Systems, described the principles and applications of frequency mapping using laser voltage imaging (LVI) and laser voltage probing (LVP). After explaining how switching transistors modulate the intensity Volume 15, No. 1 37 ISTFA '12 User's Group Summary of reflected light...
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View articletitled, ISTFA 2012 User's Group Summaries
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for article titled, ISTFA 2012 User's Group Summaries
This article provides a summary of the presentations given at the four User’s Group meetings at ISTFA 2012. Each user group focused on one of the following topics: nanoprobing, contactless fault isolation, focused ion beam, and sample preparation.
Journal Articles
What’s Been Happening with the IVAs?
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EDFA Technical Articles (2010) 12 (3): 4–8.
Published: 01 August 2010
... There have been multiple amplifier and signalfiltering methods applied to improve IVA detection, but some of the most promising work has been in pulsed-laser and pulsed-device operation.[8,9] By puls- failure analysis techniques more challenging to use in fine defect localization. The IVA approaches...
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View articletitled, What’s Been Happening with the IVAs?
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for article titled, What’s Been Happening with the IVAs?
One of the pioneering developers of induced voltage alteration (IVA) measurement techniques assesses the current state of the technology, the impact of major advancements, and the potential for further improvements. The assessment pays particular attention to biasing approaches, phase-locked loop detection techniques, the effect of solid immersion lenses on spatial resolution, and the emergence of production-type sample preparation methods.
Journal Articles
Superconducting Electronics: A New Frontier for Failure Analysis and Reliability
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EDFA Technical Articles (2019) 21 (2): 54–55.
Published: 01 May 2019
... FAILURE ANALYSIS | VOLUME 21 NO. 2 Reflected light image (left) and TIVA image (right) of a biased decoder at ambient temperature using a 1064 nm laser. Three distinct signals (dark circles) were detected with TIVA. separated by interlayer SiO2, vias, and junctions), defects such as shorts and resistive...
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View articletitled, Superconducting Electronics: A New Frontier for Failure Analysis and Reliability
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for article titled, Superconducting Electronics: A New Frontier for Failure Analysis and Reliability
This column assesses the current state and outlook for superconducting device technology and its application in exascale computing.
Journal Articles
Optoelectronic Device Failure Analysis
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EDFA Technical Articles (2003) 5 (4): 27–32.
Published: 01 November 2003
... to the depth of the active region. The elimination of the signal from the active region allowed high-contrast images of the current paths induced by the pulsed current stress to be localized. This is further demonstrated in Fig. 8, where a similarly degraded LED is imaged at two different primary beam energies...
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View articletitled, Optoelectronic Device Failure Analysis
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for article titled, Optoelectronic Device Failure Analysis
This article discusses the types of defects that occur in vertical cavity surface-emitting lasers (VCSELs) and the tools typically used to detect them and identify the cause. It describes the basic design and operation of VCSELs and explains that most failures are due to dislocations in the crystal structure of the materials from which the devices are made. Of the various methods used to analyze such defects, electroluminescence (EL) is by far the most powerful as demonstrated in several EL images included in the article. The article also discusses the use of EBIC analysis, FIB cross-sectioning, and thermally induced voltage alteration (TIVA).
Journal Articles
Backside Analysis: Backside Thermal Mapping Using Active Laser Probe
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EDFA Technical Articles (2000) 2 (2): 32–32B.
Published: 01 May 2000
... the shadow like character of the resultant images. L.M. Foucault is generally credited with the first use of a Schlieren optical system. 32A diagnostic techniques. A pulse laser synchronized to the switching event in a Schlieren imaging apparatus allowed capture of the transient heating caused...
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View articletitled, Backside Analysis: Backside Thermal Mapping Using Active <span class="search-highlight">Laser</span> Probe
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for article titled, Backside Analysis: Backside Thermal Mapping Using Active <span class="search-highlight">Laser</span> Probe
The transition to “flip-chip” packaging forced a renaissance in failure analysis methods, usually referred to as backside failure analysis. This article describes one such technique based on active laser probing. The technique uses the optical properties of the silicon substrate to produce a high-sensitivity, high-resolution thermal map of the device active area. This map can locate shorting defects and be used as a thermal management tool.
Journal Articles
ISTFA 2009 User’s Group Discussion Summaries
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EDFA Technical Articles (2010) 12 (2): 20–28.
Published: 01 May 2010
... optical effect in which two photons are simultaneously absorbed. High-peak pulse power, picosecond lasers are used to create the conditions needed to observe the absorption signals as a photocurrent in the integrated circuit. Resolution enhancement is due to the square power dependency of two-photon...
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View articletitled, ISTFA 2009 User’s Group Discussion Summaries
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for article titled, ISTFA 2009 User’s Group Discussion Summaries
This article summarizes major discussion points from four User’s Group meetings held at the ISTFA 2009 conference. The topics addressed are "Optical Techniques: Growth and Limitations," "Resolution of Nanoprobing for 45 nm and Beyond: New Challenges," "FIB," and "Fast ASIC Fault Isolation: Efficiency and Accurate Resolution of Software-Based Fault Isolation."
Journal Articles
The Use of a Virtual Known Good Device (VKGD) to Accelerate 3-D Packaging Development
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EDFA Technical Articles (2015) 17 (4): 32–36.
Published: 01 November 2015
... than 10 µm.[2-5] As in conventional TDR, the faultdetection accuracy of EOTPR is a function of the rise time of the incident pulse, the time-based jitter, and the signal-to-noise ratio (SNR). The EOTPR system generates a terahertz pulse using an ultrafast laser and a pair of photoconductive switches...
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View articletitled, The Use of a Virtual Known Good Device (VKGD) to Accelerate 3-D Packaging Development
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for article titled, The Use of a Virtual Known Good Device (VKGD) to Accelerate 3-D Packaging Development
This article discusses the concept of a virtual known good device (VKGD) and how it used in the development of advanced 3D packaging. It explains that a VKGD is essentially an electromagnetic model of an IC package, including bumps, interposers, and through-silicon vias. These models, used in conjunction with reflectometry data, help engineers isolate faults in the early stages of IC package development, greatly reducing cycle times.
Journal Articles
Advanced Packaging Fault Isolation Case Studies and Advancement of EOTPR
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EDFA Technical Articles (2018) 20 (4): 24–29.
Published: 01 November 2018
... jitter, and signal-to-noise ratio (SNR). The EOTPR instrument generates a terahertz pulse using an ultrafast laser and a pair of photoconductive switches for signal generation and detection, resulting in a system with (i) high measurement bandwidth, (ii) low time-base jitter, and (iii) a high time-base...
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View articletitled, Advanced Packaging Fault Isolation Case Studies and Advancement of EOTPR
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for article titled, Advanced Packaging Fault Isolation Case Studies and Advancement of EOTPR
Electro optical terahertz pulse reflectometry (EOTPR) is a nondestructive fault isolation technique that is well suited for today’s ICs. This article provides examples of how EOTPR is being used to investigate 2.5D and 3D packages, wafer level fanout packages, and MEMS devices. It also discusses recent advancements in EOTPR systems and software.
Journal Articles
Advanced Characterization of Materials Using Atom Probe Tomography
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EDFA Technical Articles (2024) 26 (1): 14–21.
Published: 01 February 2024
... resolving power, and analytical sensitivity, as well as the variety of materials that can be analyzed through the addition of 3D detectors, energy compensating optics, local electrodes, and advances in pulsed laser technology. APT will be briefly reviewed here, focusing on the capabilities and advances...
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View articletitled, Advanced Characterization of Materials Using Atom Probe Tomography
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for article titled, Advanced Characterization of Materials Using Atom Probe Tomography
New materials integration and improved design can be promoted by using atom probe tomography (APT) as an analysis technique. This article provides an overview of APT principles and setups and provides diverse examples that focus on its use to characterize electronic devices.
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