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positive gate disturb stress
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Journal Articles
EDFA Technical Articles (2009) 11 (2): 30–34.
Published: 01 May 2009
...Keith Harber; Sam Subramanian; Tony Chrastecky; Kheim Ly; Charles Petri This article presents a case study involving flash memory bit failures characterized by threshold voltage changes due to positive gate disturb stress. An inconsistency in failing bit behavior, which was found to be dependent...
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This article presents a case study involving flash memory bit failures characterized by threshold voltage changes due to positive gate disturb stress. An inconsistency in failing bit behavior, which was found to be dependent on the test mode, was explored to provide an electrical explanation for the failure. The underlying defect was isolated and subsequently identified by physical analysis.
