Search Results for plasma FIB delayering

Liquid metal ion and plasma beam FIB systems are widely used in the semiconductor industry for TEM lamella preparation, circuit edit, and cross-sectional analysis. This article compares the deprocessing capability of a Ga FIB with that of a Xe plasma FIB. Both systems were used to delayer an Intel 14 nm processor from M8 down to the transistor contacts. As the images in the article show, a 100 × 100 µm window was opened by the Xe plasma FIB and a 20 × 20 µm window was opened with the Ga FIB. Related issues such as processing time, end point detection, and surface roughness are also discussed.

Plasma focused ion beam (PFIB) systems can generate ion beams with much higher current and are therefore able to remove larger volumes of material at much faster rates while still maintaining precise control of the beam and its milling action. This article explains how the improved performance of PFIB is leading to new applications in delayering, deprocessing, and site-specific failure analysis.

Deprocessing of ICs is often the final step for defect validation in FA cases with limited fault-isolation information. This article presents a workflow for deprocessing ICs from the backside using automated thinning and large-area plasma FIB delayering. Advantages to this approach include a reduction in manual planarization and depackaging and a higher degree of precision and repeatability.

Further development of SEM-based feature extraction tools for design validation and failure analysis is contingent on reliable sample preparation methods. This article describes how a delayering framework for 130 nm technology was adapted and used on a 45 nm SPI module consisting of 11 metal layers, 10 via layers, two layers of polysilicon, and an active silicon layer. It explains how different polishing and etching methods are used to expose each layer with sufficient contrast for SEM imaging and subsequent feature extraction. By combining polygon sets representing each layer, the full design of the device was reconstructed as shown in one of the images.

Broad ion beam delayering is a versatile technique for whole-chip failure analysis. The large area of uniformity coupled with the ability to precisely stop at the layer of interest facilitates repeatable, rapid defect detection anywhere on the chip.

The 42nd International Symposium for Testing and Failure Analysis (ISTFA 2016) was held in Fort Worth, Texas, November 6-10, 2016. This article provides a summary of the keynote presentation, technical program, panel discussion, tutorials, and User’s Group meetings.

This article discusses the current state of large area integrated circuit deprocessing, the latest achievements in the development of automated deprocessing equipment, and the potential impact of advancements in gas-assisted etching, ion source alternatives, compact spectroscopy, and high-speed lasers.

The Electronic Device Failure Analysis Society established the Die-Level Post-Isolation Domain Council to provide an overview of the upcoming challenges in this area and guide technique developments for next-generation analytical tools. This column summarizes the findings of the council in the areas of sample preparation, microscopy, nanoprobing, circuit editing, and scanning probe microscopy. It is a preview of the full roadmap document, which is in preparation to be released to the EDFAS community.

This article presents a comprehensive study of physical inspection and attack methods, describing the approaches typically used by counterfeiters and adversaries as well as the risks and threats created. It also explains how physical inspection methods can serve as trust verification tools and provides practical guidelines for making hardware more secure.

The complexity of sample preparation and deprocessing has risen exponentially with the emergence of 2.5-D and 3D packages. This article provides answers and insights on how to deal with the challenges of increasingly complex semiconductor packages. After identifying pressing issues and potential bottlenecks with state-of-the-art FA flows, the authors present two case studies demonstrating the capabilities of electro-optical terahertz pulse reflectometry (EOTPR), plasma FIB milling, and 3D X-ray imaging. The FA results confirm the potential of all three techniques and indicate that a fully nondestructive integration flow for 3D packages may be achievable with further development and optimization.

This article discusses the failure analysis challenges associated with large overmolded 2.5D packages and explains how laser decapsulation followed by microwave-induced plasma (MIP) spot etching removes overmold while keeping everything else intact. It also describes a defect isolation procedure in which the sample is analyzed in a large chamber environmental SEM with its ball grid array directly wired to an EBAC amplifier.

The 43rd International Symposium for Testing and Failure Analysis (ISTFA 2017) was held in Pasadena, Calif., November 5-9, 2017. This article provides a summary of the keynote presentation, technical program, panel discussion, tutorials, and User’s Group meetings.

This article provides a recap and summaries of the EDFAS Virtual User Group Workshop held in January 2021. The summaries cover key participants, presentation topics, and discussion highlights from the Focused Ion Beam, Sample Preparation, Contactless Probing and Nanoprobing, and System on Package virtual group meetings.

The 47th International Symposium for Testing and Failure Analysis (ISTFA 2021) was held in Phoenix, Ariz., from October 31 to November 4, 2011. This article provides a summary of the keynote presentation, technical program, panel discussion, tutorials, User Group meetings, and the Women in Electronics Failure Analysis (WEFA) event.

This article discusses the concept and intent of a construction analysis and the value it provides to manufacturers and users of integrated circuits. It describes the basic steps of a construction analysis for semiconductor devices and presents and interprets measurements and observations obtained from the analyses of several ICs.

The 45th International Symposium for Testing and Failure Analysis (ISTFA 2019) was held in Portland, Oregon, November 10-14, 2019. This article gives a brief summary of the highlights and identifies key contributors to the event. It also includes highlights of panel discussions from the inaugural meeting of Women in Electronics Failure Analysis (WEFA) and the panel discussion "What Does Artificial Intelligence Mean to Failure Analysis Engineers?" The article concludes with a brief recap of each of the four User Group meetings that took place during the conference: Sample Prep, System on Package, FIB/Circuit Edit, and Nanoprobing.

This article provides a recap of the 50th International Symposium for Testing and Failure Analysis (ISTFA), which was held in San Diego from October 28 to November 1, 2024. It includes General Chair Yan Li’s wrap-up, a list of the winning ISTFA papers and posters, and highlights from panel sessions and user group meetings.

The 44th International Symposium for Testing and Failure Analysis (ISTFA 2018) was held in Phoenix, Ariz., October 28 - November 1, 2018. This article provides a summary of the highlights and identifies key contributors to the event. It also includes a summary of a panel discussion on the topic “Failures Worth Analyzing.” It concludes with discussion highlights from the Focused Ion Beam, Sample Preparation, and Contactless Fault Isolation/Nanoprobing user group meetings held at the conference.