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metal transfer

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Journal Articles
EDFA Technical Articles (2014) 16 (3): 14–19.
Published: 01 August 2014
... of a particular failure. It also discusses the differences between aluminum and copper electromigration. Copyright © ASM International® 2014 2014 ASM International aluminum electromigration copper electromigration electromigration metal transfer httpsdoi.org/10.31399/asm.edfa.2014-3.p014 EDFAAO...
Journal Articles
EDFA Technical Articles (2021) 23 (1): 29–33.
Published: 01 February 2021
... or metallic filamentation process that governs RRAM switching characteristics. Various NVM technologies are being explored for neuromorphic system realization, including resistive RAM, ferroelectric RAM, phase change RAM, spin transfer torque RAM, and NAND flash. This article discusses the potential...
Journal Articles
EDFA Technical Articles (2004) 6 (4): 12–17.
Published: 01 November 2004
... and direct IC cooling solutions. One example of indirect IC cooling uses diamond substrate transparent heat spreaders. Direct die cooling techniques vary from blowing cold air over the die and air jet cooling to more complex phase change heat-transfer techniques, such as spray cooling. Thermal Solution...
Journal Articles
EDFA Technical Articles (2012) 14 (4): 4–11.
Published: 01 November 2012
... diffuser metal contamination in CCDbased sensors.[10] More recently, the authors applied this technique for the identification of both gold fast diffuser and tungsten slow diffuser contamination in CMOS image sensors.[6,7] With a model based on the Fig. 2 Photodiode and transfer gate sideview with silicon...
Journal Articles
EDFA Technical Articles (2013) 15 (3): 12–19.
Published: 01 August 2013
...Nicholas Antoniou FIB milling is difficult if not impossible with III-V compound semiconductors and certain interconnect metals because the materials do not react well with the gallium used in most FIB systems. This article discusses the nature of the problem and explains how cryogenic FIB-SEM...
Journal Articles
EDFA Technical Articles (2007) 9 (4): 14–19.
Published: 01 November 2007
... with a brand new particle accelerator, Applications Interdisciplinaires des Faisceaux d Ions en Région Aquitaine (AIFIRA). This ion beam facility is used for fundamental research and by the technology transfer department of the laboratory Atelier Régional de Caractérisation par Analyse Nucléaire Elémentaire...
Journal Articles
EDFA Technical Articles (2017) 19 (3): 12–20.
Published: 01 August 2017
.... The scan spans from the inner end of the JTE near the top metal contact to the outer end of the JTE near the isolation trench. (a) 585 V breakdown device. (b) 747 V breakdown device. (c) 2331 V breakdown device. The applied voltage at which the peak transfers from the isolation trench to the metal contact...
Journal Articles
EDFA Technical Articles (1999) 1 (4): 4–26.
Published: 01 November 1999
... the transfer function. This failure mode is shown in Figure 1. The failure was isolated to the MIDDVDD pin. This pin should be about half the voltage of the DVDD pin (effectively 1.5V). Slm Part CDM IOOOV DAe 14 trans Ftmc Blank Code iN vs Voltage Out The mixed-signal device analysis described here...
Journal Articles
EDFA Technical Articles (2006) 8 (1): 6–14.
Published: 01 February 2006
... by the address bit that distinguishes the two bitline contact neighbors. A transmission electron microscope (TEM) image of a fault bitline contact is shown in Fig. 2.[8] The bitline contact is too short. It does not reach the silicon level coming from the lowest metal level, and it cannot form the source contact...
Journal Articles
EDFA Technical Articles (2003) 5 (3): 13–20.
Published: 01 August 2003
... downstream gates connected to the drain of the transistor, and the capacitance of the interconnect connecting the transistor to the gates downstream. To understand why the switching transistor emits photons, let s consider the static complimentary metal-oxide semiconductor (CMOS) inverter. Figure 1 shows...
Journal Articles
EDFA Technical Articles (1999) 1 (4): 14–20.
Published: 01 November 1999
... of the effectiveness of c'leaning processes, monitoring the impact of new pro- cessing tools on wafer contamination levels, and implant matching studies for technology transfer between fabrication sites.3 Instrumentation There are various types of SIMS instrumentation depending on the nature of the primary ion source...
Journal Articles
EDFA Technical Articles (2005) 7 (2): 20–28.
Published: 01 May 2005
... There are three combinational logic timing para- meters dealing with propagation delay that must fit into overall system rules: The maximum delay in the subcircuit (tlogic) The minimum delay in the subcircuit (tlogic,cd) The statistical variation of these delays Logic gates and metal interconnection...
Journal Articles
EDFA Technical Articles (2013) 15 (1): 4–9.
Published: 01 February 2013
... been considered to integrate large numbers of identical components. In past efforts, efficiencies have been accomplished close to 15% on individual silicon devices[7] and more than 12% when interconnecting and transferring hundreds of cells at once onto ultraflexible substrates.[8] Even though...
Journal Articles
EDFA Technical Articles (2004) 6 (2): 21–27.
Published: 01 May 2004
... isolation techniques. In the 90 nm node devices, the minimum pitch of gate and metal features is approximately 0.4 and 0.25 µm, respectively. For this technology, a resolution of less than 0.25 µm is necessary to identify failure points in transistors or metal lines. Previously, Ippolito et al. reported...
Journal Articles
EDFA Technical Articles (2006) 8 (2): 14–20.
Published: 01 May 2006
... to a difference in this current variation near the defect.[5] This method can be applied on buried structures, but the various metal layers on top of the structure under test can screen the heat transfer, which decreases the OBIRCH signal and the localization accuracy. The use of the OBIRCH method is essential...
Journal Articles
EDFA Technical Articles (2011) 13 (3): 4–11.
Published: 01 August 2011
..., no matter if it is just a simple component, a bare printed circuit board (PCB), or a fully equipped board, represents a complex assembly of a great variety of different materials: silicon die, die underfill, mold compound with or without filler, routing metal, component solder contacts, component...
Journal Articles
EDFA Technical Articles (2006) 8 (2): 28–34.
Published: 01 May 2006
... gates, 354K bits of SRAM, 352K bits of ROM, an on-chip oscillator, and 170 configurable I/Os. Preverified base wafers are prefabricated through metal-2. User designs are customized at the via-2 layer. The remaining standard metal layers are quickly fabricated. Parts are then tested, packaged, and made...
Journal Articles
EDFA Technical Articles (2018) 20 (2): 26–32.
Published: 01 May 2018
...Lucille A. Giannuzzi Ex-situ lift out (EXLO) techniques rely on van der Waals forces to transfer FIB milled specimens to various types of carriers using a glass probe micromanipulator. This article describes some of the latest EXLO techniques for site specific scanning transmission electron...
Journal Articles
EDFA Technical Articles (2017) 19 (3): 4–11.
Published: 01 August 2017
... transition energy at 3.13 eV. Evidently, PDA or silicatization removes or decreases the density of such defects. This study employs internal multiphoton photon emission (IMPE) to transfer charge between the silicon substrate and high-k film stacks. TD-EFISH generation probes subsequent charge-trapping...
Journal Articles
EDFA Technical Articles (2002) 4 (4): 11–16.
Published: 01 November 2002
..., producing heat without generating unwanted photocurrents. RIL can analyze ICs having defective vias or contacts where metal-metal, metal-poly, or metal-Si structures are the targets of applied laser energy. In this technical condensation, we briefly describe the failure mechanisms that can produce defective...