1-7 of 7 Search Results for

lightly doped N-wells

Follow your search
Access your saved searches in your account

Would you like to receive an alert when new items match your search?
Close Modal
Sort by
Journal Articles
EDFA Technical Articles (2015) 17 (2): 32–33.
Published: 01 May 2015
... in a CMOS device. The relatively simple process is outlined in this installment of Master FA Technique, which also includes a series of images showing how well the method works. Copyright © ASM International® 2015 2015 ASM International junction delineation lightly doped N-wells wet chemical...
Journal Articles
EDFA Technical Articles (2007) 9 (4): 22–25.
Published: 01 November 2007
.... Tungsten vias at the ends of the resistors permitted measurements at multiple points in the series. The n-type resistors were located inside a p-well isolated from the p-type substrate by an ntype buried layer on the bottom and n-wells on the sides. The doping concentration of the resistors...
Journal Articles
EDFA Technical Articles (2001) 3 (1): 20–23.
Published: 01 February 2001
... at this device. Eyestrain was a major problem. Even then the sensitivity was limited. Spatial resolution was limited as well since it was hard to pinpoint the exact glow location. By 1984, another reliability concern arose. The steady scaling of n-channel devices made them more susceptible to wear-out by hot...
Journal Articles
EDFA Technical Articles (2000) 2 (1): 1–9.
Published: 01 February 2000
... layers. 8 ELECTRONIC DEVICE FAILUREANALVSIS NEWS Subsurface Damage EBIC analysis is also useful in isolating electrical shorts through several layers ofmetallization where other isolation techniques would fall sholt, as shown in the ease of the HEXFET in Figure 5. [n this case, the top source metal plate...
Journal Articles
EDFA Technical Articles (2004) 6 (2): 6–11.
Published: 01 May 2004
... to accomplish these modifications.2 Advancements in the application of FIB modification techniques in failure analysis Advancements in the application of FIB mod- and circuit debug activities have i f i c a t i o n demonstrated the utility and techniques flexibility of FIB procedures. in failure analysis...
Journal Articles
EDFA Technical Articles (1999) 1 (2): 13–22.
Published: 01 May 1999
... oxide isolation is used. The gate oxide thickness is 12.5 urn and the minimum drawn transistor gate length is 0.6 /lm (0.5 Lerr). An LDD (lightly doped source/drain) process is used for both the n- and p-channel MOS transistors with a 180 urn silicon nitride spacer for the LDD implant. The polysilicon...
Journal Articles
EDFA Technical Articles (2019) 21 (4): 30–37.
Published: 01 November 2019
... challenge occurs mostly on IO n-type field effect transistors (NFETs) because the supply voltage is almost constant to the previous nodes while Fig. 1 FinFET 3D channel feature: Distinct fin sidewall and top. The thin layer marked in black is the interfacial layer (IL), and the pink layer is the high K...