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doping concentration

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Journal Articles
EDFA Technical Articles (2017) 19 (4): 12–20.
Published: 01 November 2017
... measurements on test samples in AFMs. This article presents examples in which sMIM technology is used to measure dielectric coefficients, doping concentrations, and nanoscale C-V curves for different semiconductor and dielectric materials. It also explains how measured results compare with theoretical models...
Journal Articles
EDFA Technical Articles (2007) 9 (2): 19–24.
Published: 01 May 2007
... shown in Fig. 2(b) has been acquired of the process flow is suspected. through the p+nn+n++ region. This plot also demonstrates that the contrast between adjacent unipolar junctions (nn+n can be resolved and that the contrast increment due to the increase of the doping concentration by a decade...
Journal Articles
EDFA Technical Articles (2022) 24 (4): 4–11.
Published: 01 November 2022
... The absorption characteristics of silicon highly depend on the wavelength considered as well as the doping concentration of the silicon.[13] For substrate doping concentrations well below 1016 cm-3, an absorption coefficient as given in References 14 and 15 can be assumed. It must be kept in mind...
Journal Articles
EDFA Technical Articles (2020) 22 (4): 28–33.
Published: 01 November 2020
..., micro-LED displays, electric and self-driving cars, and specialty lighting. 9. H.-L. Chen et al.: Determination of n Type Doping Level in Single GaAs Nanowires by Cathodoluminescence, Nano Lett., 2017. 10. A. Jaffré et al.: Contactless Investigation of the p-Type Doping Concentration Level of Single...
Journal Articles
EDFA Technical Articles (2020) 22 (4): 10–16.
Published: 01 November 2020
... to be high performance, but NMOS has lagged Fig. 2 Two phosphorous-doped Si samples subjected to two different process conditions (Process A and Process B) have been characterized by DHEM and SIMS. DHEM depth profiles show a large variation in the carrier concentration and mobility values for Process...
Journal Articles
EDFA Technical Articles (2017) 19 (3): 12–20.
Published: 01 August 2017
... is edfas.org 2 × 1019 cm 3, giving a hole concentration of ~1017 cm 3. A bi-layer is assumed such that the top layer is perfectly compensated, while the bottom layer has a net p-doping equal to 10% of the initial magnesium concentration. Calculated electric field distributions are shown for three different...
Journal Articles
EDFA Technical Articles (2007) 9 (4): 22–25.
Published: 01 November 2007
.... Tungsten vias at the ends of the resistors permitted measurements at multiple points in the series. The n-type resistors were located inside a p-well isolated from the p-type substrate by an ntype buried layer on the bottom and n-wells on the sides. The doping concentration of the resistors...
Journal Articles
EDFA Technical Articles (2016) 18 (2): 16–27.
Published: 01 May 2016
... a wide range of carrier concentrations (1013 to 1021 cm 3). Higher doping concentration in the silicon leads to lower charge mobility due to ionized impurity scattering. To determine the substrate doping impact on Qcoll, the authors re-ran the TCAD simulations but intentionally turned off the (b) Fig. 15...
Journal Articles
EDFA Technical Articles (2017) 19 (3): 22–27.
Published: 01 August 2017
... impedance variation. In the case Fig. 1 Diagram of scanning microwave impedance system and the output signals edfas.org of a semiconductor device, this impedance variation will be due to variations in carrier concentration induced by the dopant concentration. Due to the large impedance of the nanometer...
Journal Articles
EDFA Technical Articles (2013) 15 (4): 14–21.
Published: 01 November 2013
... the MQW is a superlattice (SL) of GaN/InGaN, but with lower indium concentration. It serves to reduce dislocations in the GaN before grow- ing the active MQW. Because this SL is n-doped on both sides, it does not emit any light. The n-dopant is at its maximum concentration just below the SL...
Journal Articles
EDFA Technical Articles (2011) 13 (4): 14–19.
Published: 01 November 2011
...Xiang-Dong Wang Scanning capacitance microscopy (SCM) has proven to be an effective tool for investigating doping-related failure mechanism in ICs. The examples in this article show how the author used SCM to solve various problems including premature breakdown due to pattern misalignment...
Journal Articles
EDFA Technical Articles (2022) 24 (2): 18–23.
Published: 01 May 2022
... how it minimizes surface amorphization and improves scanning capacitance microscopy (SCM) signals representative of local active dopant concentration. Sample preparation is a critical step for dopant profiling of FinFET devices, especially when targeting individual fins. This article describes...
Journal Articles
EDFA Technical Articles (2013) 15 (2): 22–30.
Published: 01 May 2013
... section. When there are local p- and n-doped regions in the singlecrystal substrate of semiconductor devices, the electrostatic potential distribution across the p-n junctions causes local phase shifts in the plane electron wave transmitted through the doped regions. The off-axis electron holography...
Journal Articles
EDFA Technical Articles (2022) 24 (3): 24–31.
Published: 01 August 2022
..., quantification, and spatial distribution of the local electrical properties with high spatial resolution are keys to optimizing microelectronic processes. For dopant concentration and mapping, several techniques are available based on chemical detection and probing characterization. For the chemical dopant...
Journal Articles
EDFA Technical Articles (2016) 18 (1): 4–12.
Published: 01 February 2016
... imaging between differently doped regions.[7] A narrow, straight dark line was observed at the NMOS channel area. This hairline passed across all the NMOS channels, and its position and configuration (parallel to one side of the device structure) exactly matched the OBIRCH signature (Fig. 5). In the PVC...
Journal Articles
EDFA Technical Articles (2002) 4 (4): 29–33.
Published: 01 November 2002
... junctions to variations in doping concentrations.8 In this work, an EBIC system in a HD-2000 dedicated FESTEM (Hitachi Ltd., Tokyo, Japan) has been designed and implemented.9 The STEM-EBIC technique determined the pn junction location of an indium gallium nitride (InGaN) quantum well Light Emitting Diode...
Journal Articles
EDFA Technical Articles (2012) 14 (4): 4–11.
Published: 01 November 2012
... the concentration of tungsten and gold contaminants in an image sensor and estimate the dark current generated by a single atom of each metal. This article discusses the basic principles of dark current spectroscopy (DCS), a measurement technique that can detect and identify low levels of metal contaminants...
Journal Articles
EDFA Technical Articles (2017) 19 (1): 10–13.
Published: 01 February 2017
... concentration. The like charge of mobile ions causes them to repel each other. The original plot in Fig. 1(b) was taken while mobile charges were evenly distributed. The step increase in capacitance identifies the threshold voltage required to produce the inversion layer. Plot 2 in Fig. 1(b) was taken after...
Journal Articles
EDFA Technical Articles (2005) 7 (2): 30–34.
Published: 01 May 2005
... of the characteristic x-ray peaks and the low background noise, the lower limit of detection is expected to be substantially improved in contrast to standard detectors. For its determination, samples with homogeneously dissolved impurities at low concentration are required. Highly phosphorus-doped bulk silicon...
Journal Articles
EDFA Technical Articles (1999) 1 (4): 14–20.
Published: 01 November 1999
... of the atoms from the sample surface. Dynamic SIMS depth profiling can provide sensitivity to detennine ppb elemental concentrations as a function of sputter depth into the sample. Static SIMS is used to obtain information from the outermost monolayer of a sample with minimal disturbance of the composition...