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dielectric coefficient
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Journal Articles
EDFA Technical Articles (2017) 19 (4): 12–20.
Published: 01 November 2017
...Oskar Amster; Stuart Friedman; Yongliang Yang; Fred Stanke Scanning microwave impedance microscopy (sMIM) is a relatively new method for making electrical measurements on test samples in AFMs. This article presents examples in which sMIM technology is used to measure dielectric coefficients, doping...
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Scanning microwave impedance microscopy (sMIM) is a relatively new method for making electrical measurements on test samples in AFMs. This article presents examples in which sMIM technology is used to measure dielectric coefficients, doping concentrations, and nanoscale C-V curves for different semiconductor and dielectric materials. It also explains how measured results compare with theoretical models, confirming the validity of each approach.
Journal Articles
EDFA Technical Articles (2011) 13 (1): 46–48.
Published: 01 February 2011
...) dielectrics. The problem is worst for large die, where thermal excursions are largest and stresses on the fragile dielectrics highest. Silicon substrates offer the following advantages: High wiring density due to the very flat substrate Coefficient of thermal expansion (CTE) matched to the silicon die...
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This column explains that silicon interposers, considered an interim solution to full 3D integration, may turn out to be more than a stepping stone along the path toward 3D ICs.
Journal Articles
EDFA Technical Articles (2022) 24 (1): 17–28.
Published: 01 February 2022
...Yasuo Cho Scanning nonlinear dielectric microscopy (SNDM) is a scanning probe technique that measures changes in oscillation frequency between the probe tip and a voltage-biased sample. As the probe moves across the surface of a semiconductor device, the oscillation frequency changes in response...
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Scanning nonlinear dielectric microscopy (SNDM) is a scanning probe technique that measures changes in oscillation frequency between the probe tip and a voltage-biased sample. As the probe moves across the surface of a semiconductor device, the oscillation frequency changes in response to variations in dielectric properties, charge and carrier density, dopant concentration, interface states, or any number of other variables that affect local capacitance. Over the past few years, researchers at Tohoku University have made several improvements in dielectric microscopy, the latest of which is a digital version called time-resolved SNDM (tr-SNDM). Here they describe their new technique and present an application in which it is used to acquire CV, d C /d V-V , and DLTS data from SiO 2 /SiC interface samples.
Journal Articles
EDFA Technical Articles (2014) 16 (2): 18–23.
Published: 01 May 2014
... be classified into different types based on their materials and construction: tantalum, ceramics, aluminum, and so on (Table 1). Each offers a unique set of properties suited for a particular application. A simple CAP consists of a dielectric material sandwiched between two conductors with a bias applied across...
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This article reviews the basic failure modes of surface-mount tantalum capacitors and the methods used to determine the cause. It discusses the factors that contribute to leakage, shorts, opens, and high series resistance, the characteristics of each failure mode, and the best approaches for failure analysis.
Journal Articles
EDFA Technical Articles (2000) 2 (2): 17–29.
Published: 01 May 2000
...Michael C. Olewine; John F. DiGregorio; Gus J. Colovos; Kevin F. Saiz; Hongjiang Sun This case study describes the difficulties and challenges failure analysts encountered in their nearly year-long investigation into the cause of cracking in a dielectric film. Despite the trend in microelectronics...
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This case study describes the difficulties and challenges failure analysts encountered in their nearly year-long investigation into the cause of cracking in a dielectric film. Despite the trend in microelectronics to use ever more costly and sophisticated equipment, this investigation was conducted using only SEM and optical microscope observations coupled with persistent detective work, which eventually uncovered to the cause.
Journal Articles
EDFA Technical Articles (2001) 3 (3): 15–18.
Published: 01 August 2001
... of the primary beam with the target. The amplitude of the energy distribution is proportional to the primary beam current. The ratio of the total secondary electron emission current to the primary electron current is commonly referred to as the secondary emission coefficient . The typical energy distribution...
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Voltage contrast, a phenomenon that occurs in scanning electron microscopes, produces brightness variations in SEM images that correspond to potential variations on the test sample. Through appropriate processing, voltage contrast signals can reveal an extensive amount of information about the functionality of ICs. Voltage contrast can be used, for example, to map electrical logic levels and timing waveforms from internal nodes of the chip as it operates inside the SEM chamber. This article describes the fundamentals of voltage contrast and its applications in IC failure analysis.
Journal Articles
EDFA Technical Articles (2003) 5 (4): 5–10.
Published: 01 November 2003
... conductivity. Another significant challenge is the integration of mechanically weak Cu/low-k dielectrics at the < 90 nm node with organic packages that induce thermal mechanical and mechanical stress. In addition to the high-performance packaging challenges, there is a vast array of package technologies...
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The Assembly Analytical Forum (AAF) is an organization under the auspices of the Sematech Quality Council. The AAF charter is to develop Packaging Analytical Roadmaps five to ten years into the future that are consistent with the International Technology Roadmap for semiconductors (ITRS). At ISTFA 2003, the AAF will convene with interested conference attendees to review, edit, and validate a white paper that will quantify critical gaps in the current suite of test, measurement, and characterization tools used in the semiconductor industry and provide recommendations on how to address them. The intent is to update the document biannually and review it in numerous industry venues to ensure its relevancy and utility. This article is somewhat of a preview to the Rev 0 AAF white paper.
Journal Articles
EDFA Technical Articles (2017) 19 (3): 4–11.
Published: 01 August 2017
...Ming Lei; J. Price; Yujin Cho; Farbod Shafiei; M.C. Downer Optical second-harmonic generation (SHG) is a noninvasive technique that provides information about interface properties and crystal defects. This article demonstrates the use of SGH in the study of high-k dielectrics, silicon-on-insulator...
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Optical second-harmonic generation (SHG) is a noninvasive technique that provides information about interface properties and crystal defects. This article demonstrates the use of SGH in the study of high-k dielectrics, silicon-on-insulator structures, compound semiconductors, and through-silicon vias.
Journal Articles
EDFA Technical Articles (2006) 8 (4): 6–11.
Published: 01 November 2006
... characterization. Traditional microprobing requires the use of a focused ion beam (FIB) to cut small holes through the dielectric layers and between the metal lines of the upper layers of metallization of the semiconductor device to access the transistor nodes. These contact holes are then backfilled with FIB...
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Probing in the sub-100 nm realm requires new tools and techniques that are relatively easy to learn if users follow the advice of the authors of this article. The authors present a probing method based on scanning probe technology and demonstrate its use on a 90-nm transistor failure due to a poly-silicon gate short. They also address challenges associated with sample preparation, probe tip contamination and wear, and the effects of vibration and drift.
Journal Articles
EDFA Technical Articles (2001) 3 (4): 15–19.
Published: 01 November 2001
... are now qualified in shorter timeframes. New die-level interconnect materials, such as copper and ultra-low-k dielectrics, may challenge conventional low-cost packaging solutions. These new packaging materials and interfaces will need analytical support for successful implementation. Finally, flip chip...
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Over the last few years, new challenges increased the pressure on packaging and assembly analytical resources. Reduced product development cycle time, increased market segmentation, new package and die level materials, ever shrinking device geometries, and fully enabled technologies (i.e. with thermal, retention, and EMI solutions) created these new pressures on fault isolation/failure analysis efforts and package development.
Journal Articles
EDFA Technical Articles (2015) 17 (4): 22–28.
Published: 01 November 2015
... are normally used either for low-frequency coupling or for radio-frequency transient protection. Another protection is offered by a more or less elastic conductive epoxy buffer for the terminal pads. This approach allows a little elastic movement to compensate for coefficient of thermal expansion differences...
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This article addresses the issue of capacitor failures, explaining how and why they occur and how to determine the cause. It describes the frequent but often overlooked reliability failure mechanisms of ceramic, foil, and electrolytic capacitors.
Journal Articles
EDFA Technical Articles (2020) 22 (3): 8–15.
Published: 01 August 2020
... assessment, starting after a failure analysis and integrated in a real structured problem solving approach. In the context of semiconductor industry for automotive, an inter dielectric delamination defect is used as a case study to visualize statistics usage in risk assessment: for this failure, some field...
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Failure analysis is the study and presentation of observable or measurable phenomena. Risk assessment, on the other hand, is when root causes are studied to predict the potential for future failures. In this article, the author describes a structured problem-solving approach that consists of failure analysis, risk assessment, and advanced modeling. A case study is also presented in which the probability of future failures, due to a delamination defect, is determined based on field returns.
Journal Articles
EDFA Technical Articles (2004) 6 (4): 12–17.
Published: 01 November 2004
.... This is particularly useful and Heat is then extracted from the heat exchanger by inexpensive where analysis on a range of die sizes is forced air convection. This increased surface area is required. required because the heat-transfer coefficient, h, for forced air convection is low at approximately 0.01 W/cm2/°C...
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This article discusses the generation of heat that occurs in ICs during failure analysis and examines the effectiveness of various die cooling techniques including heat spreading films, spray cooling, and liquid and air jet impingement.
Journal Articles
EDFA Technical Articles (2012) 14 (3): 46–47.
Published: 01 August 2012
... wiring density due to the very flat substrate Efficiency of wiring layers on each chip, because the global wiring is built on the interposer Efficiency of the active area on each chip, because there is no keep-out area for the TSV Coefficient of thermal expansion matched to the silicon die Lower...
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The pace of development for 2.5-D packaging solutions appears to be accelerating as the timeline for the adoption of 3D through-silicon via (TSV) technology continues to slide. This column discusses the latest advancements in 2.5-D or interposer packaging technology and the growing number of applications.
Journal Articles
Edward I. Cole, Jr., Paiboon Tangyunyong, Charles F. Hawkins, Michael R. Bruce, Victoria J. Bruce ...
EDFA Technical Articles (2002) 4 (4): 11–16.
Published: 01 November 2002
... to be weak liner attachment to the W and stress forces, respectively. Via Pushup Via pushup defects occur when Al bulges or pushes up into the W via.9 The permanent extrusion of Al into the via space is believed to be stress-induced with the thermal coefficient of expansion playing an initial (Editor s note...
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Resistive interconnections, a type of soft failure, are extremely difficult to find using existing backside methods, and with flip-chip packages, alternative front side approaches are of little or no help. In an effort to address this challenge, a team of engineers developed a new method that uses the effects of resistive heating to directly locate defective vias, contacts, and conductors from either side of the die. In this article, they discuss the basic principles of their new method and demonstrate its use on two ICs in which a variety of resistive interconnection failures were found.
Journal Articles
EDFA Technical Articles (2006) 8 (4): 12–14.
Published: 01 November 2006
... than leadbased solders, meaning that the devices see wider temperature excursions during manufacturing. This tends to exacerbate all the coefficient of thermal expansion mismatches in the package. Couple this with the new low-k dielectrics (which are not mechanically strong compared to previous...
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With the July 2006 implementation of RoHS (the restriction of the use of certain hazardous substances in electrical and electronic equipment), the electronics reliability industry has seen a changeover to lead-free solders and “green” mold compounds that have no bromine- or antimony-based flame retardants. This article addresses some of the challenges caused by implementation of the new requirements.
Journal Articles
EDFA Technical Articles (2019) 21 (1): 20–25.
Published: 01 February 2019
... and an InGaAs CCD is used for wavelengths in the near-IR range. Fig. 3 Thermoreflectance coefficient vs. wavelength for various materials typically encountered with semiconductor devices. also changes. Thermoreflectance thermal imaging (TTI) depends on an accurate measurement of the relative change in surface...
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A noninvasive thermal imaging approach based on the thermoreflectance principle is proposed for analyzing advanced semiconductor devices. Several examples illustrate the value of this approach in detecting thermal anomalies and defects missed by other techniques.
Journal Articles
EDFA Technical Articles (2014) 16 (4): 20–24.
Published: 01 November 2014
... fatigue cracking of copper involves the coefficient of thermal expansion mismatch Microvoids on the TSV axis (incomplete conformal between the silicon and the copper, especially during filling) temperature cycling. Much progress has been made Barrel cracking within the TSV Voids in vias, including...
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This article assesses the progress that has been made in the development and implementation of through-silicon via (TSV) technology, the work yet to be done, and the challenges associated with potential failure mechanisms.
Journal Articles
EDFA Technical Articles (2005) 7 (1): 10–14.
Published: 01 February 2005
... no glassivation and polyimide as an interlevel dielectric. Additional challenges involve the ever-shrinking size of the packages; some look no larger than a grain of pepper, requiring them to be potted in a socket prior to decapsulation. At the other extreme is chip-on-boards, which require exposing numerous...
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Although plastic-encapsulated packaging dominates most of the IC industry, deprocessing and reliability testing continue to be a problem, particularly in industries making the switch from hermetically sealed ceramic packages. This article discusses the challenges designers and failure analysts face in the military and aerospace electronics industry stemming from the use of plastic packages. It provides examples of the types of failures encountered and describes the procedures used to detect and identify them.
Journal Articles
EDFA Technical Articles (2002) 4 (1): 5–10.
Published: 01 February 2002
... Technologies designs and fabricates semiconductor products used in high-performance graphics, test, and communications applications. These electrically complex semiconductors frequently operate at very high frequencies, have high power dissipations, and are physically large. Due to their high dielectric...
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Mechanical bending strength measurements, part of a quality screening process for ceramic substrate package designs, revealed a significant difference between two substrates that could not be attributed to constituent materials or structural thickness effects. Structural analysis was performed to generate a hypothesis that the metal vias were not structurally adhered to the ceramic holes and thus caused stress concentrations that reduced the bending strength of the substrates. In this detailed case study, the authors explain how they proved their hypothesis using FEA to calculate stress concentration factors, optical microscopy to examine fracture surfaces, and electron spectroscopy to determine chemical compositions. The successful outcome attests to the value of strength criteria as an investigative tool for the assessment of electronic package substrate quality.
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