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defect localization
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Journal Articles
EDFA Technical Articles (2012) 14 (4): 12–18.
Published: 01 November 2012
...Martin Versen Failure analysis of dynamic random access memory follows a three-step process consisting of electrical test and diagnosis, localization, and physical defect analysis. The electrical test delivers pass-fail results that are graphically displayed in bitmaps, which are then used...
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Failure analysis of dynamic random access memory follows a three-step process consisting of electrical test and diagnosis, localization, and physical defect analysis. The electrical test delivers pass-fail results that are graphically displayed in bitmaps, which are then used to localize defects based on layout data. This article describes each step of the process and compares and contrasts laser scanning techniques.
Journal Articles
EDFA Technical Articles (2024) 26 (2): 4–8.
Published: 01 May 2024
...Séverine Gomès This article presents the principles of scanning thermal microscopy (SThM) instruments and their potential uses for the local thermal analysis of passive and active electronic components and devices. Three examples are given that demonstrate the SThM’s ability to perform thermal...
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This article presents the principles of scanning thermal microscopy (SThM) instruments and their potential uses for the local thermal analysis of passive and active electronic components and devices. Three examples are given that demonstrate the SThM’s ability to perform thermal analysis on a microscopic scale. The results suggest that SThM could be used as a powerful tool for analyzing printed circuit boards and electronic devices with high spatial resolution, during the development cycle, failure analysis during and after manufacture, and during operation.
Journal Articles
EDFA Technical Articles (2010) 12 (4): 22–27.
Published: 01 November 2010
...Kevin Sanchez Dynamic laser stimulation is widely used in the PASS/FAIL mapping mode for soft defect localization. Recent improvements, including parametric mapping and multiple-parameter acquisition, significantly increase the amount of information that can be extracted from DLS measurements...
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Dynamic laser stimulation is widely used in the PASS/FAIL mapping mode for soft defect localization. Recent improvements, including parametric mapping and multiple-parameter acquisition, significantly increase the amount of information that can be extracted from DLS measurements. This article explains where and how these new techniques are used and how they may be even further improved.
Journal Articles
EDFA Technical Articles (2009) 11 (1): 46–47.
Published: 01 February 2009
...Ehrenfried Zschech This column explains why transmission X-ray microscopy (TXM) and X-ray computed tomography (XCT) could become the methods of choice for defect localization in the coming years. Copyright © ASM International® 2009 2009 ASM International defect localization X-ray imaging...
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This column explains why transmission X-ray microscopy (TXM) and X-ray computed tomography (XCT) could become the methods of choice for defect localization in the coming years.
Journal Articles
EDFA Technical Articles (2001) 3 (4): 9–13.
Published: 01 November 2001
... the setup of a prototype laser-SQUID system, explaining how it works and how it compares to other nondestructive defect localization techniques. It presents application examples in which laser-SQUID microscopy is used to locate gate oxide shorts to within 1.3 μm and detect IC defects prior to bond-pad...
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Scanning laser-SQUID microscopy is a new electrical inspection and failure analysis technique that can detect open, high-resistance, and shorted interconnects without electrical contact in areas ranging in size from a few square microns to an entire die. This article describes the setup of a prototype laser-SQUID system, explaining how it works and how it compares to other nondestructive defect localization techniques. It presents application examples in which laser-SQUID microscopy is used to locate gate oxide shorts to within 1.3 μm and detect IC defects prior to bond-pad pattering and after bonding and packaging. It also includes a series of images acquired from a board-mounted chip with fields of view ranging from 5 x 5 mm down to 50 x 50 μm.
Journal Articles
EDFA Technical Articles (2008) 10 (4): 24–29.
Published: 01 November 2008
... adapted to accommodate the size of these detectors and the exotic materials from which they are made. It discusses the types of defects that can occur and how they affect critical detector characteristics. It describes the basic approach for defect localization and physical analysis and presents examples...
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Flat-panel X-ray detectors used in medical imaging applications present a challenge to failure analysts due to the scale of the products, the newness of the technology, and the relatively low production rates compared to ICs. This article explains how existing tools are being adapted to accommodate the size of these detectors and the exotic materials from which they are made. It discusses the types of defects that can occur and how they affect critical detector characteristics. It describes the basic approach for defect localization and physical analysis and presents examples of defects in different areas of a flat-panel X-ray detector.
Journal Articles
EDFA Technical Articles (2002) 4 (2): 10–16.
Published: 01 May 2002
...Edward I. Cole Jr. This article provides a qualitative overview of several new defect localization techniques, including charge-induced voltage alteration (CIVA), light-induced voltage alteration (LIVA), thermally-induced voltage alteration (TIVA), and Seebeck effect imaging (SEI). It explains how...
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This article provides a qualitative overview of several new defect localization techniques, including charge-induced voltage alteration (CIVA), light-induced voltage alteration (LIVA), thermally-induced voltage alteration (TIVA), and Seebeck effect imaging (SEI). It explains how each method works in terms of the physics of signal generation and the types of images they produce. It also includes a summary highlighting the similarities and differences of each technique.
Journal Articles
EDFA Technical Articles (2016) 18 (3): 10–16.
Published: 01 August 2016
...S.H. Goh; B.L. Yeoh; G.F. You; Y.H. Chan; Zhao Lin; Jeffrey Lam; C.M. Chua This article explains how hardware and software enhancements bring new capabilities to one of the most widely used soft-defect localization techniques. It discusses the basic concept of electrically enhanced laser-assisted...
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This article explains how hardware and software enhancements bring new capabilities to one of the most widely used soft-defect localization techniques. It discusses the basic concept of electrically enhanced laser-assisted device alteration (EeLADA) and demonstrates its use on different types of soft and hard defects. It also discusses the relative advantages of hardware and software implementations.
Journal Articles
EDFA Technical Articles (2012) 14 (3): 12–20.
Published: 01 August 2012
...Fulvio Infante Magnetic microscopy is a defect localization technique that has several advantages. It is nondestructive, noninvasive, and contactless. In many cases, it can be used even before component depackaging. This article describes the basic setup of a magnetic current imaging (MCI...
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Magnetic microscopy is a defect localization technique that has several advantages. It is nondestructive, noninvasive, and contactless. In many cases, it can be used even before component depackaging. This article describes the basic setup of a magnetic current imaging (MCI) microscope and explains how it reveals 3D current paths at the package and die level. It also presents application examples showing how MCI has helped failure analysts isolate a wide range of electrical defects, including shorts, resistive opens, and full opens.
Journal Articles
EDFA Technical Articles (2007) 9 (1): 20–23.
Published: 01 February 2007
... contributes to advanced defect localization. Copyright © ASM International® 2007 2007 ASM International electron beam induced current imaging failure isolation voltage contrast imaging httpsdoi.org/10.31399/asm.edfa.2007-1.p020 EDFAAO (2007) 1:20-23 VC and EBIC 1537-0755/$19.00 ©ASM...
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Voltage contrast followed by electron beam induced current imaging is an effective approach for isolating IC failures. This article briefly reviews the physics of signal generation for both techniques and presents several examples illustrating how this powerful combination contributes to advanced defect localization.
Journal Articles
EDFA Technical Articles (2020) 22 (2): 29–35.
Published: 01 May 2020
...Sebastian Brand; Frank Altmann This article describes a form of lock-in thermography that achieves 3D localization of thermally active defects in stacked die packages. In this approach, phase shifts associated with thermal propagation delay are analyzed as a function of frequency. This allows...
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This article describes a form of lock-in thermography that achieves 3D localization of thermally active defects in stacked die packages. In this approach, phase shifts associated with thermal propagation delay are analyzed as a function of frequency. This allows for a precise localization of defects in all three spatial dimensions and can serve as a guide for subsequent high-resolution physical analyses.
Journal Articles
EDFA Technical Articles (2018) 20 (1): 10–18.
Published: 01 February 2018
...Thierry Parrassin; Laurent Clément Soft electrical failures caused by monograin defects can have a significant impact on yield in technology nodes below 40 nm. Moreover, the failures are hard to identify and the defects give very few signatures during localization testing. In this article...
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Soft electrical failures caused by monograin defects can have a significant impact on yield in technology nodes below 40 nm. Moreover, the failures are hard to identify and the defects give very few signatures during localization testing. In this article, the authors explain how they used nanobeam diffraction with automated crystal orientation and phase mapping to pinpoint a single grain orientation causing the problem and, as a result, are now able to recognize the symptoms of this type of failure, observe the defect, and limit the impact on electrical timing margins through both design and process corrections.
Journal Articles
EDFA Technical Articles (2023) 25 (3): 54–55.
Published: 01 August 2023
... analysis typically consists of two major sequential steps. The first step, fault isolation, involves using software diagnostics, ATE testers, and various optical-based fault isolation techniques to narrow down the faulty area. The second step, post-isolation, focuses on further localizing the defective...
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The Electronic Device Failure Analysis Society established the Die-Level Post-Isolation Domain Council to provide an overview of the upcoming challenges in this area and guide technique developments for next-generation analytical tools. This column summarizes the findings of the council in the areas of sample preparation, microscopy, nanoprobing, circuit editing, and scanning probe microscopy. It is a preview of the full roadmap document, which is in preparation to be released to the EDFAS community.
Journal Articles
EDFA Technical Articles (2017) 19 (4): 4–9.
Published: 01 November 2017
...Jérémie Dhennin In this case study, the author describes the investigation of a defective DC-DC converter retrieved from an aircraft following the report of abnormal system behavior. Electrical testing, local probing, X-ray imaging, and cross-sectional analysis led to the discovery of cracks...
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In this case study, the author describes the investigation of a defective DC-DC converter retrieved from an aircraft following the report of abnormal system behavior. Electrical testing, local probing, X-ray imaging, and cross-sectional analysis led to the discovery of cracks on several pins and in some of the solder material. The cracks were caused by different rates of thermal expansion and were remedied with the help of thermomechanical analysis, EBSD imaging, and phase map comparisons for thick and thin solder joints.
Journal Articles
EDFA Technical Articles (2000) 2 (2): 1–10.
Published: 01 May 2000
... materials. Many of these defects can be imaged for coarse localization without any deprocessing of the sample. SQUID sensors can produce weak current images even in the presence of background current five orders of magnitude stronger. This high sensitivity also enables effective imaging with much lower...
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Recent work with a commercial instrument based on a SQUID sensor shows that magnetic field imaging can be very effective in isolating defect shorts in packages and dies. This technique is especially beneficial when the defect is buried under layers of metal, Si, or encapsulation materials. Many of these defects can be imaged for coarse localization without any deprocessing of the sample. SQUID sensors can produce weak current images even in the presence of background current five orders of magnitude stronger. This high sensitivity also enables effective imaging with much lower currents than thermal techniques.
Journal Articles
EDFA Technical Articles (2007) 9 (2): 14–18.
Published: 01 May 2007
... image analysis techniques are discussed in this paper to aid in defect localization: image comparison and intensity profiling. Image comparison techniques exist in a myriad of forms, and a successful isolation of an elusive subsurface defect using image subtraction and subsequent gray-level expansion...
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Image enhancement has proven helpful for locating defects in ICs. This article discusses two image analysis techniques, image comparison and intensity profiling, and shows how they reveal defects that would otherwise be missed.
Journal Articles
EDFA Technical Articles (2012) 14 (2): 14–20.
Published: 01 May 2012
... will be introduced and their application will be demonstrated in the form of case studies. In the selected examples, specific focus is given to the typical features and requirements of 3-D vertical integration, for example, the requirement to localize, prepare, and analyze defects occurring in the interfaces...
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Failure analysis is becoming increasingly difficult with the emergence of 3D integrated packages due to their complex layouts, diverse materials, shrinking dimensions, and tight fits. This article demonstrates several FA techniques, including high-frequency scanning acoustic microscopy, lock-in thermography, and FIB cross-sectioning in combination with plasma ion etching or laser ablation. Detailed case studies show how the various methods can be used to analyze bonding integrity between different materials, chip-to-chip interface structures, buried interconnect defects, and through-silicon vias at either the device or package level.
Journal Articles
EDFA Technical Articles (2010) 12 (3): 4–8.
Published: 01 August 2010
... defects. Thermally-IVA (TIVA) and Seebeck effect imaging (SEI)[5] were intro- duced in 1998 and use the local thermal stimulus presented by Kiyoshi Nikawa in optical beam-induced resistance change,[6] but with constant-current biasing to im- Fig. 2 TIVA signal of a shorted interconnection on a SRAM prove...
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One of the pioneering developers of induced voltage alteration (IVA) measurement techniques assesses the current state of the technology, the impact of major advancements, and the potential for further improvements. The assessment pays particular attention to biasing approaches, phase-locked loop detection techniques, the effect of solid immersion lenses on spatial resolution, and the emergence of production-type sample preparation methods.
Journal Articles
Edward I. Cole, Jr., Paiboon Tangyunyong, Charles F. Hawkins, Michael R. Bruce, Victoria J. Bruce ...
EDFA Technical Articles (2002) 4 (4): 11–16.
Published: 01 November 2002
... principles of their new method and demonstrate its use on two ICs in which a variety of resistive interconnection failures were found. Copyright © ASM International® 2002 2002 ASM International defect localization resistive interconnections soft failures httpsdoi.org/10.31399/asm.edfa.2002-4...
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Resistive interconnections, a type of soft failure, are extremely difficult to find using existing backside methods, and with flip-chip packages, alternative front side approaches are of little or no help. In an effort to address this challenge, a team of engineers developed a new method that uses the effects of resistive heating to directly locate defective vias, contacts, and conductors from either side of the die. In this article, they discuss the basic principles of their new method and demonstrate its use on two ICs in which a variety of resistive interconnection failures were found.
Journal Articles
EDFA Technical Articles (2006) 8 (2): 14–20.
Published: 01 May 2006
... techniques, and FIB cross-sectioning on failures such as dielectric breakdown, open and resistive vias, voids, shorts, delaminations, and gate oxide defects. Copyright © ASM International® 2006 2006 ASM International CMOS ICs defect localization fault isolation FIB cross-sectioning...
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This article assesses the capabilities of failure analysis techniques in the context of 65 nm CMOS ICs. It demonstrates the use of OBIRCH, voltage contrast, Seebeck effect imaging, SEM and TEM techniques, and FIB cross-sectioning on failures such as dielectric breakdown, open and resistive vias, voids, shorts, delaminations, and gate oxide defects.
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