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defect clustering

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Journal Articles
EDFA Technical Articles (2018) 20 (3): 4–7.
Published: 01 August 2018
... circuit complexity, systematic and random defects, and defect clustering. As the examples in the article show, with just a basic understanding of yield models, readers can estimate expected yield losses and identify abnormal yield results for a given design. Copyright © ASM International® 2018 2018...
Journal Articles
EDFA Technical Articles (2020) 22 (2): 22–28.
Published: 01 May 2020
... characteristics of cluster-type failures in 14 nm SOI FinFET SRAM after standard FIB cross-section imaging failed to reveal any visible defects. Copyright © ASM International® 2020 2020 ASM International defect isolation nanoprobing scanning capacitance microscopy SOI FinFETs 22 EDFAAO (2020...
Journal Articles
EDFA Technical Articles (2021) 23 (3): 24–31.
Published: 01 August 2021
... Technological University, Singapore csamuel@ntu.edu.sg INTRODUCTION Despite the challenges posed by continuous scaling of transistors and decrease in operating voltage, photon emission[1] remains one of the go-to techniques for defect localization in ICs.[2] For instance, recent work on resistive random access...
Journal Articles
EDFA Technical Articles (2008) 10 (4): 24–29.
Published: 01 November 2008
... to correct than clusters (groups of defective pixels). Big clusters are not allowed because they can induce diagnosis errors. An algorithm counts all defective pixels and classifies them as isolated pixels, clusters, lines, or columns. Noise level is measured. It can also be classified in various categories...
Journal Articles
EDFA Technical Articles (2012) 14 (4): 4–11.
Published: 01 November 2012
... sensor dark current spectroscopy defect density metal contaminants httpsdoi.org/10.31399/asm.edfa.2012-4.p004 EDFAAO (2012) 4:4-11 Dark Current Spectroscopy 1537-0755/$19.00 ©ASM International® Finding the Invisible Contaminants in CMOS Image Sensor Pixels: The DCS Technique Florian Domengie...
Journal Articles
EDFA Technical Articles (2000) 2 (1): 4–27.
Published: 01 February 2000
...). The defect was to be an anom- It is interesting to observe the lDlx;o measurement characteristics - both the luvo vs. VDU voltage relationship (Fig. 4b), and the changes due to bum-in (Fig. 5). Before bumin, there are not obvious "clusters" of IIJlXl measurements. After bum-in, however, there are clearly two...
Journal Articles
EDFA Technical Articles (2023) 25 (2): 16–28.
Published: 01 May 2023
... microscope. Then, the clusters are analyzed to determine irregular structures on an image. Regression aims to predict a numerical value for a given input. An application of regression[50] uses a random forest regressor to predict values of critical defect features, like defect size, for automated optical...
Journal Articles
EDFA Technical Articles (2023) 25 (1): 54–55.
Published: 01 February 2023
.... Integrating AI into FA flow promotes automation and big data analysis, which saves human resources and costs, shortens TPT, and enables high volume FA support on very complicated microelectronic devices. Prospective progresses have been made in the following areas: 1) Defect detection and classification; 2...
Journal Articles
EDFA Technical Articles (2022) 24 (1): 17–28.
Published: 01 February 2022
... semiconductor Capacitors Fabricated on Different Silicon Carbide Polytypes, Appl. Phys. Lett., 1994, 65, p. 2723 2724, doi:10.1063/1.112547. 22. K. Yamasue, Y. Yamagishi, and Y. Cho: Influence of Non-Uniform Interface Defect Clustering on Field-Effect Mobility in SiC MOSFETs Investigated by Local Deep Level...
Journal Articles
EDFA Technical Articles (2000) 2 (3): 1–10.
Published: 01 August 2000
... control. Another failure, observed after burn-in, was traced to the presence of residual titanium left after metal etch. Copyright © ASM International® 2000 2000 ASM International cross-field variation etching defect microprocessor failures unit level traceability httpsdoi.org/10.31399...
Journal Articles
EDFA Technical Articles (2013) 15 (1): 35–36.
Published: 01 February 2013
... for analyzing defects due to implanter charging effects, and the third paper explains how analysts determined the cause of automatic test pattern generation failures concentrated in certain areas of the wafer. Copyright © ASM International® 2013 2013 ASM International Case History Synopsis ISTFA...
Journal Articles
EDFA Technical Articles (2008) 10 (2): 20–28.
Published: 01 May 2008
...Sam Subramanian; Raghaw Rai; Khiem Ly; Tony Chrastecky; Randy Mulder; Keith Harber Localizing defects in one-of-a-kind failures can take days, weeks, or even months, after which a detailed physical analysis is conducted to determine the root cause. TEM and STEM play complimentary roles...
Journal Articles
EDFA Technical Articles (2000) 2 (4): 10–11.
Published: 01 November 2000
... that may reveal technology-limiting defects. For III-V materials, we are faced with several challenges to conventional mechanical cross sectioning techniques. For example, the air bridge of MMICs needs to be filled in order to avoid folding of the structure. To overcome these limitations, we developed...
Journal Articles
EDFA Technical Articles (2019) 21 (1): 4–9.
Published: 01 February 2019
..., in IEEE Proc. ICCAD, 2013, p. 99-105. 24. W.C. Tam, O. Poku, and R.D. Blanton, Systematic Defect Identification through Layout Snippet Clustering, IEEE Proc. Intl. Test Conf. (ITC), 2010, paper 13.2. 25. W.T. Cheng, et al.: Automatic Identification of Yield Limiting Layout Patterns Using Root Cause...
Journal Articles
EDFA Technical Articles (2006) 8 (2): 14–20.
Published: 01 May 2006
... techniques, and FIB cross-sectioning on failures such as dielectric breakdown, open and resistive vias, voids, shorts, delaminations, and gate oxide defects. Copyright © ASM International® 2006 2006 ASM International CMOS ICs defect localization fault isolation FIB cross-sectioning...
Journal Articles
EDFA Technical Articles (2020) 22 (4): 28–33.
Published: 01 November 2020
... energy can be tuned to control its penetration depth into the material, enabling depth-sensitive measurements and subsurface defect localization the focusing capability of electrons allows for resolutions in the nanometer range, much better than any other optical technique it is inherently...
Journal Articles
EDFA Technical Articles (2020) 22 (3): 8–15.
Published: 01 August 2020
... that consists of failure analysis, risk assessment, and advanced modeling. A case study is also presented in which the probability of future failures, due to a delamination defect, is determined based on field returns. Failure analysis is the study and presentation of observable or measurable phenomena...
Journal Articles
EDFA Technical Articles (2014) 16 (3): 4–12.
Published: 01 August 2014
... automation-based logic scan diagnosis. In SRAM bitmapping, physical representations of fail bits are classified into different signatures, such as single bits, pair bits, or a four-bit cluster, to create a Pareto chart that guides FA candidate selection.[1] Priority for FA is assigned to the candidates...
Journal Articles
EDFA Technical Articles (2005) 7 (4): 6–14.
Published: 01 November 2005
... the logic is based on memory, the end user can program the IC electrically, similar to a fieldprogrammable gate array (FPGA). Secondly, it allows the programmer to locate defective wires and automatically route around them during the programming cycle.[10] This is an important part of fault tolerance...
Journal Articles
EDFA Technical Articles (2017) 19 (2): 10–20.
Published: 01 May 2017
... even be used to distinguish between different arrangements of the same type of defect. For example, one can determine if dopants tend to exist as single atoms, in pairs, or in larger clusters, and in what ratios. Positrons remaining in a sample eventually find an electron and are annihilated...