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deep ultraviolet microscopes

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Journal Articles
EDFA Technical Articles (2001) 3 (3): 1–23.
Published: 01 August 2001
..., the author describes the basic design of DUV microscopes, the role of major components, and their effect on imaging quality. Copyright © ASM International® 2001 2001 ASM International CCD camera condensing lenses deep ultraviolet microscopes laser sources objective lenses httpsdoi.org...
Journal Articles
EDFA Technical Articles (2000) 2 (1): 10–14.
Published: 01 February 2000
...Wolfgang Vollrath This article provides an overview of deep ultraviolet (DUV) microscopy, the factors that led to its development, and the types of applications for which it is suited in semiconductor device manufacturing, testing, and inspection. It also includes several images demonstrating...
Journal Articles
EDFA Technical Articles (1999) 1 (4): 15–17.
Published: 01 November 1999
... with enhanced sensitivity, espe- PRODlJClS~~EWS Nikon Inc. Melville, N.Y: Nikon Inc. has introduced a new inspection system that capitalizes on the company's acknowledged, world leadership in using deep ultraviolet (DUV) technologies to meet the challenges for semiconductor and optical storage media...
Journal Articles
EDFA Technical Articles (2024) 26 (1): 14–21.
Published: 01 February 2024
... Leading to High Performance GeTe Thermoelectric Devices, Adv Energy Mater, Jan. 2023, 13(3), p. 2203361, doi.org/10.1002/aenm.202203361. 16. A.N. Chiaramonti, et al.: Field Ion Emission in an Atom Probe Microscope Triggered by Femtosecond-Pulsed Coherent Extreme Ultraviolet Light, Microscopy...
Journal Articles
EDFA Technical Articles (2008) 10 (4): 30–32.
Published: 01 November 2008
... interconnect, before the back end of line. Processes in a 3-D integration sequence include through-wafer via formation, deep reactive ion etching (DRIE) or laser drilling, via filling by deposition of diffusion barrier and adhesion layers, metallization, wafer thinning and alignment, and bonding. Figure 1...
Journal Articles
EDFA Technical Articles (2011) 13 (4): 14–19.
Published: 01 November 2011
.... For plan-view imaging, the sample is directly etched in hydrofluoric acid to remove all the back-end materials on the silicon surface. For both plan-view and cross-sectional imaging, the samples are baked at 300 ºC in ultraviolet to achieve a good-quality surface with a thin layer of oxide. Case Studies...
Journal Articles
EDFA Technical Articles (2009) 11 (2): 30–34.
Published: 01 May 2009
... of the failing bits had been performed, using a variety of techniques. Scanning electron microscope (SEM) top-down inspection, transmission electron microscope (TEM) cross sections, Auger analysis, and a variety of techniques had been employed to deconstruct the failing bits in an attempt to determine why...